BC817DS NPN General Purpose Double Transistor Philips
User Manual: Marking of electronic components, SMD Codes N3, N3***, N3030LS, N306AD. Datasheets BC817DS, BFG520W, BZX384-B43, DMN3030LSS, ISL9N306AD3, ISL9N306AD3ST, MMSZ5263, Si2303CDS.
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BC817DS NPN general purpose double transistor Product specification Supersedes data of 2002 Aug 09 2002 Nov 22 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BC817DS QUICK REFERENCE DATA • High current (500 mA) SYMBOL • 600 mW total power dissipation VCEO collector-emitter voltage 45 V IC collector current (DC) 500 mA ICM peak collector current 1 A • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS PARAMETER MAX. UNIT PINNING • General purpose switching and amplification PIN • Push-pull amplifiers • Multi-phase stepper motor drivers. DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 DESCRIPTION NPN transistor pair in a SOT457 (SC-74) plastic package. handbook, halfpage 6 MARKING TYPE NUMBER 6 5 5 4 4 TR2 MARKING CODE TR1 BC817DS N3 1 2 Top view Fig.1 3 1 2 3 MAM340 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor unless otherwise specified VCBO collector-base voltage open emitter − 50 VCEO collector-emitter voltage open base − 45 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 200 mA Ptot total power dissipation − 370 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 600 mW Tamb ≤ 25 °C; note 1 V Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2002 Nov 22 2 Philips Semiconductors Product specification NPN general purpose double transistor BC817DS THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to note 1 ambient VALUE UNIT 208 K/W Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor VCB = 20 V; IE = 0 − − 100 nA VCB = 20 V; IE = 0; Tj = 150 °C − − 5 µA VEB = 5 V; IC = 0 − − 100 nA VCE = 1 V; IC = 100 mA; note 1 160 − 400 ICBO collector-base cut-off current IEBO emitter-base cut-off current hFE DC current gain 40 − − VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − − 700 mV VBE base-emitter voltage VCE = 1 V; IC = 500 mA; notes 1 and 2 − − 1.2 V Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − 5 − pF fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 − − MHz VCE = 1 V; IC = 500 mA; note 1 Notes 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. VBE decreases by approximately −2 mV/K with increasing temperature. 2002 Nov 22 3 Philips Semiconductors Product specification NPN general purpose double transistor MBL747 500 BC817DS MBL748 1000 IC handbook, halfpage handbook, halfpage hFE (mA) 800 (1) 400 (1) (2) (3) (4) (5) (6) (7) 300 (8) 600 (9) (2) 400 200 (10) (3) 100 200 0 10−1 1 10 102 0 103 2 0 IC (mA) VCE = 1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) IB = 15 mA. (2) IB = 13.5 mA. (3) IB = 12 mA. (4) IB = 10.5 mA. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MBL749 103 handbook, halfpage 4 6 (5) IB = 9 mA. (6) IB = 7.5 mA. (7) IB = 6 mA. (8) IB = 4.5 mA. 8 10 VCE (V) (9) IB = 3 mA. (10) IB = 1.5 mA. Collector current as a function of collector-emitter voltage; typical values. MBL750 1200 VBE handbook, halfpage (mV) 1000 VCEsat (mV) (1) 800 (2) 102 600 (1) (3) 400 (2) (3) 10 10−1 1 10 102 200 10−1 103 IC (mA) IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 1 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2002 Nov 22 4 1 10 102 IC (mA) 103 Base-emitter voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN general purpose double transistor BC817DS PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2002 Nov 22 REFERENCES IEC JEDEC EIAJ SC-74 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 Philips Semiconductors Product specification NPN general purpose double transistor BC817DS DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Nov 22 6 Philips Semiconductors Product specification NPN general purpose double transistor NOTES 2002 Nov 22 7 BC817DS Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2002 Nov 22 Document order number: 9397 750 10582
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