BC817DS NPN General Purpose Double Transistor Philips

User Manual: Marking of electronic components, SMD Codes N3, N3***, N3030LS, N306AD. Datasheets BC817DS, BFG520W, BZX384-B43, DMN3030LSS, ISL9N306AD3, ISL9N306AD3ST, MMSZ5263, Si2303CDS.

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DATA SHEET

Product specification

Supersedes data of 2002 Aug 09 2002 Nov 22

DISCRETE SEMICONDUCTORS

BC817DS

NPN general purpose double

transistor

b

ook, halfpage

M3D302

2002 Nov 22 2

Philips Semiconductors Product specification

NPN general purpose double transistor BC817DS

FEATURES

•High current (500 mA)

•600 mW total power dissipation

•Replaces two SOT23 packaged transistors on same

PCB area.

APPLICATIONS

•General purpose switching and amplification

•Push-pull amplifiers

•Multi-phase stepper motor drivers.

DESCRIPTION

NPN transistor pair in a SOT457 (SC-74) plastic package.

MARKING

TYPE NUMBER MARKING CODE

BC817DS N3

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2

2, 5 base TR1; TR2

6, 3 collector TR1; TR2

handbook, halfpage

132

4

56

Top view

MAM340

132

TR1

TR2

64

5

Fig.1 Simplified outline (SOT457) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 45 V

ICcollector current (DC) 500 mA

ICM peak collector current 1 A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor unless otherwise specified

VCBO collector-base voltage open emitter −50 V

VCEO collector-emitter voltage open base −45 V

VEBO emitter-base voltage open collector −5V

I

Ccollector current (DC) −500 mA

ICM peak collector current −1A

I

BM peak base current −200 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −370 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

Per device

Ptot total power dissipation Tamb ≤25 °C; note 1 −600 mW

2002 Nov 22 3

Philips Semiconductors Product specification

NPN general purpose double transistor BC817DS

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

CHARACTERISTICS

Tamb =25°C unless otherwise specified.

Notes

1. Pulse test: tp≤300 µs; δ≤0.02.

2. VBE decreases by approximately −2 mV/K with increasing temperature.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient

note 1 208 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor

ICBO collector-base cut-off current VCB = 20 V; IE=0 −−100 nA

VCB = 20 V; IE= 0; Tj= 150 °C−−5µA

I

EBO emitter-base cut-off current VEB =5V; I

C=0 −−100 nA

hFE DC current gain VCE =1V; I

C= 100 mA; note 1 160 −400

VCE =1V; I

C= 500 mA; note 1 40 −−

V

CEsat collector-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1 −−700 mV

VBE base-emitter voltage VCE =1V; I

C= 500 mA;

notes 1 and 2

−−1.2 V

Cccollector capacitance VCB = 10 V; IE=I

e= 0; f = 1 MHz −5−pF

fTtransition frequency VCE =5V; I

C= 10 mA;

f = 100 MHz

100 −−MHz

2002 Nov 22 4

Philips Semiconductors Product specification

NPN general purpose double transistor BC817DS

handbook, halfpage

0

500

100

200

300

400

MBL747

10−111010

2

I

C

(mA)

hFE

103

(3)

(1)

(2)

Fig.2 DC current gain as a function of collector

current; typical values.

VCE =1V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

010

1000

0

200

400

600

800

2468

V

CE (V)

IC

(mA)

MBL748

(1) (2) (3) (4) (5)

(6)

(7)

(8)

(9)

(10)

Fig.3 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB= 15 mA.

(2) IB= 13.5 mA.

(3) IB= 12 mA.

(4) IB= 10.5 mA.

(5) IB= 9 mA.

(6) IB= 7.5 mA.

(7) IB= 6 mA.

(8) IB= 4.5 mA.

(9) IB= 3 mA.

(10) IB= 1.5 mA.

handbook, halfpage

103

102

10

MBL749

10−1110 I

C

(mA)

VCEsat

(mV)

102103

(1)

(2)

(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 10.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

200

1200

400

600

800

1000

MBL750

10−1110 I

C

(mA)

VBE

(mV)

102103

(1)

(2)

(3)

Fig.5 Base-emitter voltage as a function of

collector current; typical values.

VCE =1V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2002 Nov 22 5

Philips Semiconductors Product specification

NPN general purpose double transistor BC817DS

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT457 SC-74

wBM

b

p

D

e

pin 1

index A

A1

Lp

Q

detail X

HE

E

vMA

AB

y

0 1 2 mm

scale

c

X

132

4

56

Plastic surface mounted package; 6 leads SOT457

UNIT A1bpcDEH

E

L

p

Qywv

mm 0.1

0.013 0.40

0.25 3.1

2.7

0.26

0.10 1.7

1.3

e

0.95 3.0

2.5 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.6

0.2 0.33

0.23

A

1.1

0.9

97-02-28

01-05-04

2002 Nov 22 6

Philips Semiconductors Product specification

NPN general purpose double transistor BC817DS

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the specification without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notification

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

copyright, or mask work right to these products, and

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

2002 Nov 22 7

Philips Semiconductors Product specification

NPN general purpose double transistor BC817DS

NOTES

© Koninklijke Philips Electronics N.V. 2002 SCA74

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

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Printed in The Netherlands 613514/02/pp8 Date of release: 2002 Nov 22 Document order number: 9397 750 10582