BCR148S Datasheet. Www.s Manuals.com. Infineon
User Manual: Marking of electronic components, SMD Codes WE, WE***, WE-***, WE1, WE=***, WEs, We***. Datasheets AX5505R22, AX5505R46, BCR148, BCR148S, BCR148T, BCR148U, BCR148W, BFS17W, BZT52-C8V2, BZT52C9V1, BZX84C8V2, BZX84C8V2-AU, PZU11BA/DG, RP130K381D, RT9013-12GB, RT9013-12PB, SMAJ5.0CA.
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BCR148S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package Built in bias resistor (R1=47k, R2=47k) 2 3 1 VPS05604 C1 B2 E2 6 5 4 R2 R1 TR2 TR1 R1 R2 1 2 3 E1 B1 C2 EHA07174 Type Marking BCR148S WEs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 50 DC collector current IC 70 Total power dissipation, TS = 115 °C Ptot 250 Junction temperature Tj 150 Storage temperature Tstg Value Unit V mA °C -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 140 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCR148S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - V(BR)EBO - - - ICBO - - 100 nA IEBO - - 164 µA hFE 70 - - - - 0.3 Vi(off) 0.8 - 1.5 Vi(on) 1 - 3 Input resistor R1 32 47 62 k Resistor ratio R1 /R2 0.9 1 1.1 - fT - 100 - MHz Ccb - 3 - pF DC Characteristics Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) - IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat V IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% 2 Nov-29-2001 BCR148S DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 2 10 3 - 10 2 IC hFE mA 10 1 10 1 10 0 -1 10 10 0 10 1 10 2 mA 10 10 0 0.0 3 0.2 0.4 V 0.6 IC 1.0 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 1 10 2 mA mA 10 0 IC IC 10 1 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 10 -3 0 2 Vi(on) 1 2 3 V 5 Vi(off) 3 Nov-29-2001 BCR148S Total power dissipation Ptot = f (TS ) 300 P tot mW 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Nov-29-2001 www.s-manuals.com
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