BCR148S Datasheet. Www.s Manuals.com. Infineon
User Manual: Marking of electronic components, SMD Codes WE, WE***, WE-***, WE1, WE=***, WEs, We***. Datasheets AX5505R22, AX5505R46, BCR148, BCR148S, BCR148T, BCR148U, BCR148W, BFS17W, BZT52-C8V2, BZT52C9V1, BZX84C8V2, BZX84C8V2-AU, PZU11BA/DG, RP130K381D, RT9013-12GB, RT9013-12PB, SMAJ5.0CA.
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BCR148S
Nov-29-20011
NPN Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor (R1=47k , R2=47k )
VPS05604
6
3
1
54
2
EHA07174
654
321
C1 B2 E2
C2B1E1
1
R
R2
R1
R2
TR1 TR2
Type Marking Pin Configuration Package
BCR148S WEs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage 50 V
VCEO
50Collector-base voltage VCBO
10
VEBO
Emitter-base voltage
Input on Voltage Vi(on) 50
70 mADC collector current IC
Ptot 250
Total power dissipation, TS = 115 °C
Junction temperature 150 °C
Tj
-65 ... 150Storage temperature Tst
g
Thermal Resistance
Junction - soldering point1) RthJS 140 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCR148S
Nov-29-20012
Electrical Characteristics at T
A
=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO 50 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO ---
Collector cutoff current
VCB = 40 V, IE = 0
ICBO - - 100 nA
Emitter cutoff current
VEB = 10 V, IC = 0
IEBO - - 164 µA
DC current gain 1)
IC = 5 mA, VCE = 5 V
hFE 70 - - -
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
VCEsat - - 0.3 V
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off) 0.8 - 1.5
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Vi(on) 1 - 3
Input resistor R132 47 62 k
Resistor ratio R1/R20.9 1 1.1 -
AC Characteristics
-100 -Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fTMHz
-Collector-base capacitance
VCB = 10 V, f = 1 MHz
3 - pF
Ccb
1) Pulse test: t < 300 s; D < 2%
BCR148S
Nov-29-20013
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
0.0 0.2 0.4 0.6 V1.0
VCEsat
0
10
1
10
2
10
mA
I
C
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -1 10 0 10 1 10 2 10 3
mA
IC
0
10
1
10
2
10
3
10
-
h
FE
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -1 10 0 10 1 10 2
V
Vi(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
0 1 2 3 V5
Vi(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
BCR148S
Nov-29-20014
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
