BCW60A, BCW60B, BCW60C, BCW60D, BCW60AR, BCW60BR, BCW60CR, BCW60DR Datasheet. Www.s Manuals.com. Bcw60 Zetex

User Manual: Marking of electronic components, SMD Codes AC, AC*, AC**, AC***, AC-***, AC=***, ACAY, ACAZ, ACBA, ACBB, ACBC, ACBD, ACBE, ACBF, ACBG, ACBH, ACBI, ACBJ, ACBK, ACBL, ACCZ, ACDA, ACF**, ACJ***, ACK***, ACO, ACPC, ACPD, ACR**, ACSA, ACTIVE8846QM, ACY, ACs, Ac. Datasheets 2SA1313, AAT4250IGV, AAT4250IJS, ACT8846QM460-T, BCW60C, BCX51-10, BD48E25G, BD48K25G, BFP620, BL3406B-1.5V, MAX15070AAUT, MAX15070AAUT/V, MAX15070BAUT, MAX6314US48D1-T, MAX8867EUK25-T, MAX8867EUK28-T , MAX8867EUK29-T , MAX8867EUK30-T , MAX88

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SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS

BCW60
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Collector-Emitter
Breakdown Voltage

V(BR)CEO

Emitter-Base Breakdown
Voltage

V(BR)EBO

Collector-Emitter
Cut-off Current

ICES

20
20

µA

nA

VCES =32V
VCES =32V ,Tamb=150oC

Emitter-Base Cut-Off Current

IEBO

20

nA

VEBO =4V

Collector-Emitter Saturation
Voltage

VCE(sat)

0.12
0.20

0.35
0.55

V
V

IC=10mA, IB = 0.25mA
IC= 50mA, IB =1.25mA

PARAMETER

SYMBOL

Base-Emitter
Saturation Voltage

VBE(SAT)

0.60
0.70

0.70
0.83

0.85
1.05

V
V

IC=10mA, IB=0.25mA
IC =50mA, IB=1.25mA

Collector-Base Voltage
Collector-Emitter Voltage

Base - Emitter Voltage

VBE

0.55

0.52
0.65
0.78

0.75

V
V
V

IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V

BCW60D

Transition Frequency

fT

Emitter-Base Capacitance

Cebo

Collector-Base Capacitance

Ccbo

Noise Figure

N

Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time

td
tr
ton
ts
tf
toff

CONDITIONS.

32

V

IC=2mA

5

V

IEBO =1µA

CR
DR
AR
BR

MIN.

BCW60C

UNIT

BCW60AR –
BCW60BR –
BCW60CR –
BCW60DR –

SYMBOL

hFE

120
50

78
170

20
180
70

145
250

40
250
90

220
350

100
380
100

300
500

125

250

MAX.

BCW60

PARAMETER

Static BCW60A
Forward
Current
Transfer BCW60B
Ratio

TYP.

ISSUE 2 – AUGUST 1995
PARTMARKING DETAILS
BCW60A – AA
BCW60B – AB
BCW60C – AC
BCW60D – AD

220

IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V

310

IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V

460

IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V

630

IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V

8
2

35
50
85
400
80
480

MHz

IC =10mA, VCE =5V
f = 100MHz

pF

VEBO=0.5V, f =1MHz

4.5

pF

VCBO=10V, f =1MHz

6

dB

IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
∆f=200Hz

150
800

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device

ns
ns
ns
ns
ns
ns

IC:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB =3.6V, RL=990Ω

E

C
B

COMPLEMENTARY TYPE
BCW61
SOT23

ABSOLUTE MAXIMUM RATINGS.
VALUE

UNIT

VCBO

32

V

VCEO

32

V

Emitter-Base Voltage

VEBO

5

V

Continuous Collector Current

IC

200

mA

Base Current

IB

50

mA

Power Dissipation at Tamb=25°C

PTOT

330

mW

Operating and Storage Temperature Range

tj:tstg

-55 to +150

°C

FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE Group A

h11e

hFE Group B

hFE Group C

hFE Group D

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

1.6

2.7

4.5

2.5

3.6

6.0

3.2

4.5

8.5

4.5

7.5

12

h12e

1.5

2

2

3

h21e

200

260

330

520

h22e

18

30

24

50

30

60

50

SWITCHING CIRCUIT
-VBB

R2

VCC(+10V)

RL

1µsec
R1

+10V
tr < 5nsec
Mark/Space ratio < 0.01
Zs=50Ω

50Ω

PAGE NO

tr < 5nsec
Zin ≥ 100kΩ
Oscilloscope

kΩ
10-4

100

µS

SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS

BCW60
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Collector-Emitter
Breakdown Voltage

V(BR)CEO

Emitter-Base Breakdown
Voltage

V(BR)EBO

Collector-Emitter
Cut-off Current

ICES

20
20

µA

nA

VCES =32V
VCES =32V ,Tamb=150oC

Emitter-Base Cut-Off Current

IEBO

20

nA

VEBO =4V

Collector-Emitter Saturation
Voltage

VCE(sat)

0.12
0.20

0.35
0.55

V
V

IC=10mA, IB = 0.25mA
IC= 50mA, IB =1.25mA

PARAMETER

SYMBOL

Base-Emitter
Saturation Voltage

VBE(SAT)

0.60
0.70

0.70
0.83

0.85
1.05

V
V

IC=10mA, IB=0.25mA
IC =50mA, IB=1.25mA

Collector-Base Voltage
Collector-Emitter Voltage

Base - Emitter Voltage

VBE

0.55

0.52
0.65
0.78

0.75

V
V
V

IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V

BCW60D

Transition Frequency

fT

Emitter-Base Capacitance

Cebo

Collector-Base Capacitance

Ccbo

Noise Figure

N

Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time

td
tr
ton
ts
tf
toff

CONDITIONS.

32

V

IC=2mA

5

V

IEBO =1µA

CR
DR
AR
BR

MIN.

BCW60C

UNIT

BCW60AR –
BCW60BR –
BCW60CR –
BCW60DR –

SYMBOL

hFE

120
50

78
170

20
180
70

145
250

40
250
90

220
350

100
380
100

300
500

125

250

MAX.

BCW60

PARAMETER

Static BCW60A
Forward
Current
Transfer BCW60B
Ratio

TYP.

ISSUE 2 – AUGUST 1995
PARTMARKING DETAILS
BCW60A – AA
BCW60B – AB
BCW60C – AC
BCW60D – AD

220

IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V

310

IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V

460

IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V

630

IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V

8
2

35
50
85
400
80
480

MHz

IC =10mA, VCE =5V
f = 100MHz

pF

VEBO=0.5V, f =1MHz

4.5

pF

VCBO=10V, f =1MHz

6

dB

IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
∆f=200Hz

150
800

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device

ns
ns
ns
ns
ns
ns

IC:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB =3.6V, RL=990Ω

E

C
B

COMPLEMENTARY TYPE
BCW61
SOT23

ABSOLUTE MAXIMUM RATINGS.
VALUE

UNIT

VCBO

32

V

VCEO

32

V

Emitter-Base Voltage

VEBO

5

V

Continuous Collector Current

IC

200

mA

Base Current

IB

50

mA

Power Dissipation at Tamb=25°C

PTOT

330

mW

Operating and Storage Temperature Range

tj:tstg

-55 to +150

°C

FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE Group A

h11e

hFE Group B

hFE Group C

hFE Group D

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

1.6

2.7

4.5

2.5

3.6

6.0

3.2

4.5

8.5

4.5

7.5

12

h12e

1.5

2

2

3

h21e

200

260

330

520

h22e

18

30

24

50

30

60

50

SWITCHING CIRCUIT
-VBB

R2

VCC(+10V)

RL

1µsec
R1

+10V
tr < 5nsec
Mark/Space ratio < 0.01
Zs=50Ω

50Ω

PAGE NO

tr < 5nsec
Zin ≥ 100kΩ
Oscilloscope

kΩ
10-4

100

µS

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Title                           : BCW60A, BCW60B, BCW60C, BCW60D, BCW60AR, BCW60BR, BCW60CR, BCW60DR - Datasheet. www.s-manuals.com.
Creator                         : 
Subject                         : BCW60A, BCW60B, BCW60C, BCW60D, BCW60AR, BCW60BR, BCW60CR, BCW60DR - Datasheet. www.s-manuals.com.
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Keywords                        : BCW60A, BCW60B, BCW60C, BCW60D, BCW60AR, BCW60BR, BCW60CR, BCW60DR - Datasheet. www.s-manuals.com.
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