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User Manual: Marking of electronic components, SMD Codes AC, AC*, AC**, AC***, AC-***, AC=***, ACAY, ACAZ, ACBA, ACBB, ACBC, ACBD, ACBE, ACBF, ACBG, ACBH, ACBI, ACBJ, ACBK, ACBL, ACCZ, ACDA, ACF**, ACJ***, ACK***, ACO, ACPC, ACPD, ACR**, ACSA, ACTIVE8846QM, ACY, ACs, Ac. Datasheets 2SA1313, AAT4250IGV, AAT4250IJS, ACT8846QM460-T, BCW60C, BCX51-10, BD48E25G, BD48K25G, BFP620, BL3406B-1.5V, MAX15070AAUT, MAX15070AAUT/V, MAX15070BAUT, MAX6314US48D1-T, MAX8867EUK25-T, MAX8867EUK28-T , MAX8867EUK29-T , MAX8867EUK30-T , MAX88

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SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2  AUGUST 1995
PARTMARKING DETAILS
BCW60A  AA BCW60AR  CR
BCW60B  AB BCW60BR  DR
BCW60C  AC BCW60CR  AR
BCW60D  AD BCW60DR  BR
COMPLEMENTARY TYPE
BCW61
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 32 V
Collector-Emitter Voltage VCEO 32 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC200 mA
Base Current IB50 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE
Group A hFE
Group B hFE Group C hFE
Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ
h12e 1.5 2 2 3 10-4
h21e 200 260 330 520
h22e 18 30 24 50 30 60 50 100 µS
SWITCHING CIRCUIT
BCW60
PAGE NO
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO 32 V IC
=2mA
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IEBO
=1µA
Collector-Emitter
Cut-off Current
ICES 20
20
nA
µA
VCES
=32V
VCES
=32V ,Tamb
=150oC
Emitter-Base Cut-Off Current IEBO 20 nA VEBO
=4V
Collector-Emitter Saturation
Voltage
VCE(sat) 0.12
0.20
0.35
0.55
V
V
IC
=10mA, IB = 0.25mA
IC
= 50mA, IB =1.25mA
Base-Emitter
Saturation Voltage
VBE(SAT) 0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC
=10mA, IB=0.25mA
IC
=50mA, IB=1.25mA
Base - Emitter Voltage VBE 0.55
0.52
0.65
0.78
0.75
V
V
V
IC
=10µA, VCE
=5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
BCW60C
BCW60D
hFE 120
50
78
170 220
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
20
180
70
145
250 310
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
40
250
90
220
350 460
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
100
380
100
300
500 630
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
Transition Frequency fT125 250 MHz IC
=10mA, VCE
=5V
f = 100MHz
Emitter-Base Capacitance Cebo 8pFV
EBO
=0.5V, f =1MHz
Collector-Base Capacitance Ccbo 4.5 pF VCBO
=10V, f =1MHz
Noise Figure N 2 6 dB IC
= 0.2mA, VCE
= 5V
RG
=2KΩ, f=1KH
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
IC
:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB =3.6V, RL=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
BCW60
C
B
E
SOT23
R
R R
50Ω
VCC(+10V)-VBB
+10V tr< 5nsec
Zin ≥ 100kΩ
Oscilloscope
1µsec
tr< 5nsec
Mark/Space ratio < 0.01
Zs=50Ω
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2  AUGUST 1995
PARTMARKING DETAILS
BCW60A  AA BCW60AR  CR
BCW60B  AB BCW60BR  DR
BCW60C  AC BCW60CR  AR
BCW60D  AD BCW60DR  BR
COMPLEMENTARY TYPE
BCW61
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 32 V
Collector-Emitter Voltage VCEO 32 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC200 mA
Base Current IB50 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE
Group A hFE
Group B hFE Group C hFE
Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kΩ
h12e 1.5 2 2 3 10-4
h21e 200 260 330 520
h22e 18 30 24 50 30 60 50 100 µS
SWITCHING CIRCUIT
BCW60
PAGE NO
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO 32 V IC
=2mA
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IEBO
=1µA
Collector-Emitter
Cut-off Current
ICES 20
20
nA
µA
VCES
=32V
VCES
=32V ,Tamb
=150oC
Emitter-Base Cut-Off Current IEBO 20 nA VEBO
=4V
Collector-Emitter Saturation
Voltage
VCE(sat) 0.12
0.20
0.35
0.55
V
V
IC
=10mA, IB = 0.25mA
IC
= 50mA, IB =1.25mA
Base-Emitter
Saturation Voltage
VBE(SAT) 0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC
=10mA, IB=0.25mA
IC
=50mA, IB=1.25mA
Base - Emitter Voltage VBE 0.55
0.52
0.65
0.78
0.75
V
V
V
IC
=10µA, VCE
=5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
BCW60C
BCW60D
hFE 120
50
78
170 220
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
20
180
70
145
250 310
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
40
250
90
220
350 460
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
100
380
100
300
500 630
IC
=10µA, VCE =5V
IC
=2mA, VCE
=5V
IC
=50mA, VCE
=1V
Transition Frequency fT125 250 MHz IC
=10mA, VCE
=5V
f = 100MHz
Emitter-Base Capacitance Cebo 8pFV
EBO
=0.5V, f =1MHz
Collector-Base Capacitance Ccbo 4.5 pF VCBO
=10V, f =1MHz
Noise Figure N 2 6 dB IC
= 0.2mA, VCE
= 5V
RG
=2KΩ, f=1KH
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
IC
:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB =3.6V, RL=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
BCW60
C
B
E
SOT23
R
R R
50Ω
VCC(+10V)-VBB
+10V tr< 5nsec
Zin ≥ 100kΩ
Oscilloscope
1µsec
tr< 5nsec
Mark/Space ratio < 0.01
Zs=50Ω
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