NPN 17 GHz Wideband Transistor Bfg403w Philips
User Manual: Marking of electronic components, SMD Codes P3, P3 *, P3*, P3***, P33, p32, p33. Datasheets APM8600, BFG403W, NCP367OPMUEOTBG, NUP8011MU, PDTC143TT, PDTC143XT, SO5401, Si2323CDS.
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Product specification
Supersedes data of 1997 Oct 29
File under Discrete Semiconductors, SC14
1998 Mar 11
DISCRETE SEMICONDUCTORS
BFG403W
NPN 17 GHz wideband transistor
1998 Mar 11 2
Philips Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
FEATURES
•Low current
•Very high power gain
•Low noise figure
•High transition frequency
•Very low feedback capacitance.
APPLICATIONS
•Pager front ends
•RF front end
•Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
•Radar detectors.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
Fig.1 Simplified outline SOT343R.
Marking code: P3.
handbook, halfpage
Top view
MSB842
21
43
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter −−10 V
VCEO collector-emitter voltage open base −−4.5 V
ICcollector current (DC) −3 3.6 mA
Ptot total power dissipation Ts≤140 °C−−16 mW
hFE DC current gain IC= 3 mA; VCE =2V; T
j=25°C 5080120
C
re feedback capacitance IC= 0; VCB =2V; f=1MHz −20 −fF
fTtransition frequency IC= 3 mA; VCE = 2 V; f = 2 GHz; Tamb =25°C−17 −GHz
Gmax maximum power gain IC= 3 mA; VCE = 2 V; f = 2 GHz; Tamb =25°C−22 −dB
F noise figure IC= 1 mA; VCE = 2 V; f = 900 MHz; ΓS=Γopt −1−dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11 3
Philips Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the emitter pins.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −10 V
VCEO collector-emitter voltage open base −4.5 V
VEBO emitter-base voltage open collector −1V
I
Ccollector current (DC) −3.6 mA
Ptot total power dissipation Ts≤140 °C; note 1; see Fig.2 −16 mW
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 820 K/W
Fig.2 Power derating curve.
handbook, halfpage
0 40 80 120 160
MGD957
20
0
10
Ts (°C)
Ptot
(mW)
1998 Mar 11 4
Philips Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.
2. ZS is optimized for noise; ZL is optimized for gain.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage IC= 2.5 µA; IE=0 10 −−V
V
(BR)CEO collector-emitter breakdown voltage IC= 1 mA; IB= 0 4.5 −−V
V
(BR)EBO emitter-base breakdown voltage IE= 2.5 µA; IC=0 1 −−V
I
CBO collector-base leakage current IE= 0; VCB = 4.5 V −−15 nA
hFE DC current gain IC= 3 mA; VCE = 2 V; see Fig.3 50 80 120
Cccollector capacitance IE=i
e= 0; VCB =2V; f=1MHz −170 −fF
Ceemitter capacitance IC=i
c= 0; VEB = 0.5 V; f = 1 MHz −315 −fF
Cre feedback capacitance IC= 0; VCB = 2 V; f = 1 MHz;
see Fig.4
−20 −fF
fTtransition frequency IC= 3 mA; VCE = 2 V; f = 2 GHz;
Tamb =25°C; see Fig.5
−17 −GHz
Gmax maximum power gain; note 1 IC= 0.5 mA; VCE = 1 V; f = 900 MHz;
Tamb =25°C; see Figs 6 and 8
−20 −dB
IC= 3 mA; VCE = 2 V; f = 2 GHz;
Tamb =25°C; see Figs 7 and 8
−22 −dB
insertion power gain IC= 0.5 mA; VCE = 1 V; f = 900 MHz;
Tamb =25°C; see Fig.8
−5−dB
IC= 3 mA; VCE = 2 V; f = 2 GHz;
Tamb =25°C; see Fig.8
−14 −dB
F noise figure IC= 1 mA; VCE = 2 V; f = 900 MHz;
ΓS=Γopt; see Fig.13
−1−dB
IC= 1 mA; VCE = 2 V; f = 2 GHz;
ΓS=Γopt; see Fig.13
−1.6 −dB
PL1 output power at 1 dB gain
compression
IC= 1 mA; VCE = 1 V; f = 900 MHz;
ZS=Z
S opt; ZL=Z
L opt; note 2
−−5−dBm
ITO third order intercept point IC= 1 mA; VCE = 1 V; f = 900 MHz;
ZS=Z
S opt; ZL=Z
L opt; note 2
−6−dBm
S21
2
1998 Mar 11 5
Philips Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
Fig.3 DC current gain as a function of collector
current; typical values.
(1) VCE =3V.
(2) VCE =2V.
(3) VCE =1V.
handbook, halfpage
0246
MGG678
120
0
40
80
IC (mA)
hFE
(1)
(2)
(3)
IC= 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
01 5
50
30
10
0
20
40
23 4
MGG679
VCB (V)
Cre
(fF)
Fig.5 Transition frequency as a function of
collector current; typical values.
VCE = 2 V; f = 2 GHz; Tamb =25°C.
handbook, halfpage
20
0
4
8
12
16
MGG680
101
fT
(GHz)
IC (mA)
VCE = 2 V; f = 900 MHz.
Fig.6 Maximum stable gain as a function of
collector current; typical values.
handbook, halfpage
0246
MGG709
30
10
0
20
IC (mA)
MSG
(dB)
1998 Mar 11 6
Philips Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
VCE = 2 V; f = 2 GHz.
Fig.7 Maximum stable gain as a function of
collector current; typical values.
handbook, halfpage
0246
MGG710
30
10
0
20
IC (mA)
MSG
(dB)
IC= 3 mA; VCE =2V.
Fig.8 Gain as a function of frequency;
typical values.
handbook, halfpage
010 102103104
MGG711
10
20
30
40
f (MHz)
gain
(dB)
MSG
S21
Fig.9 Common emitter input reflection coefficient (S11); typical values.
IC= 3 mA; VCE = 2 V; Zo=50Ω.
handbook, full pagewidth
MGG713
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz
3 GHz
1998 Mar 11 7
Philips Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
Fig.10 Common emitter forward transmission coefficient (S21); typical values.
IC= 3 mA; VCE =2V.
handbook, full pagewidth
MGG714
25 20 15 10 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz 3 GHz
IC= 3 mA; VCE =2V.
Fig.11 Common emitter reverse transmission coefficient (S12); typical values.
handbook, full pagewidth
MGG715
0.05 0.04 0.03 0.02 0.01
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz
3 GHz
1998 Mar 11 8
Philips Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
Fig.12 Common emitter output reflection coefficient (S22); typical values.
IC= 3 mA; VCE = 2 V; Zo=50Ω.
handbook, full pagewidth
MGG716
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
40 MHz
3 GHz
Noise data
VCE = 2 V; typical values.
f
(MHz) IC
(mA) Fmin
(dB) Γmag Γangle rn
(Ω)
900 0.5 0.9 0.91 4.7 1.41
1 1.1 0.83 5.1 1.12
2 1.4 0.71 5.1 0.97
3 1.6 0.62 5.0 0.88
4 1.9 0.56 4.9 0.84
5 2.1 0.50 4.2 0.82
2000 0.5 1.8 0.71 27.5 1.47
1 1.6 0.74 26.1 1.11
2 1.8 0.64 26.3 0.93
3 2.1 0.56 26.1 0.91
4 2.4 0.48 26.7 0.9
5 2.8 0.45 25.8 0.85
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
(1) VCE = 2 V; f = 2 GHz.
(2) VCE = 2 V; f = 900 MHz.
handbook, halfpage
0246
MGG712
3
1
0
2
(1)
(2)
IC (mA)
Fmin
(dB)
1998 Mar 11 9
Philips Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
SPICE parameters for the BFG403W die
SEQUENCE No. PARAMETER VALUE UNIT
1 IS 5.554 aA
2 BF 145.0 −
3 NF 0.993 −
4 VAF 31.12 V
5 IKF 35.75 mA
6 ISE 35.35 fA
7 NE 3.000 −
8 BR 11.37 −
9 NR 0.985 −
10 VAR 1.874 V
11 IKR 0.014 A
12 ISC 57.08 aA
13 NC 1.546 −
14 RB 122.4 Ω
15 IRB 0.000 A
16 RBM 52.45 Ω
17 RE 1.511 Ω
18 RC 15.12 Ω
19 (1) XTB 1.500 −
20 (1) EG 1.110 eV
21 (1) XTI 3.000 −
22 CJE 36.61 fF
23 VJE 900.0 mV
24 MJE 0.346 −
25 TF 4.122 ps
26 XTF 68.20 −
27 VTF 2.004 V
28 ITF 0.179 A
29 PTF 0.000 deg
30 CJC 16.21 fF
31 VJC 556.9 mV
32 MJC 0.207 −
33 XCJC 0.500 −
34 (1) TR 00.00 ns
35 (1) CJS 78.59 fF
36 (1) VJS 418.3 mV
37 (1) MJS 0.239 −
38 FC 0.550 −
Notes
1. These parameters have not been extracted, the
default values are shown.
2. Bonding pad capacity Cbp in series with substrate
resistance Rsb1 between B′ and E′.
3. Bonding pad capacity Cbp in series with substrate
resistance Rsb2 between C′ and E′.
List of components (see Fig.14)
Note
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
39 (2)(3) Cbp 145 fF
40 (2) Rsb1 25 Ω
41 (3) Rsb2 19 Ω
DESIGNATION VALUE UNIT
Cbe 80 fF
Ccb 2fF
C
ce 80 fF
L1 1.1 nH
L2 1.1 nH
L3 (note 1) 0.25 nH
SEQUENCE No. PARAMETER VALUE UNIT
QLB= 50; QLE= 50; QLB,E(f)=QL
B,E√(f/fc)
fc= scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343R2.
handbook, halfpage
MGD956
B
E
CB' C'
E'
L3
L1 L2
Ccb
Cbe ce
C
1998 Mar 11 10
Philips Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT343R
D
A
A1
Lp
Q
detail X
c
HE
E
vMA
AB
0 1 2 mm
scale
X
21
43
Plastic surface mounted package; reverse pinning; 4 leads SOT343R
wMB
97-05-21
bp
UNIT A1
max bpcD E
b
1H
E
L
pQwv
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10
0.7
0.5 2.2
1.8 1.35
1.15
e
2.2
2.0
1.3
e1
0.2
y
0.10.21.15
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
e1
A
e
y
b1
1998 Mar 11 11
Philips Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com
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© Philips Electronics N.V. 1998 SCA57
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Printed in The Netherlands 125104/00/04/pp12 Date of release: 1998 Mar 11 Document order number: 9397 750 03387
