NPN 17 GHz Wideband Transistor Bfg403w Philips

User Manual: Marking of electronic components, SMD Codes P3, P3 *, P3*, P3***, P33, p32, p33. Datasheets APM8600, BFG403W, NCP367OPMUEOTBG, NUP8011MU, PDTC143TT, PDTC143XT, SO5401, Si2323CDS.

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DISCRETE SEMICONDUCTORS

BFG403W
NPN 17 GHz wideband transistor
Product specification
Supersedes data of 1997 Oct 29
File under Discrete Semiconductors, SC14

1998 Mar 11

Philips Semiconductors

Product specification

NPN 17 GHz wideband transistor

BFG403W

FEATURES

PINNING

• Low current

PIN

DESCRIPTION

• Very high power gain

1

emitter

• Low noise figure

2

base

• High transition frequency

3

emitter

• Very low feedback capacitance.

4

collector

APPLICATIONS
• Pager front ends
• RF front end

handbook, halfpage

3

4

2

1

• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors.
Top view

DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.

MSB842

Marking code: P3.

Fig.1 Simplified outline SOT343R.

QUICK REFERENCE DATA
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

−

10

V

VCEO

collector-emitter voltage

open base

−

−

4.5

V

IC

collector current (DC)

−

3

3.6

mA
mW

Ptot

total power dissipation

Ts ≤ 140 °C

−

−

16

hFE

DC current gain

IC = 3 mA; VCE = 2 V; Tj = 25 °C

50

80

120

Cre

feedback capacitance

IC = 0; VCB = 2 V; f = 1 MHz

−

20

−

fF

fT

transition frequency

IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C −

17

−

GHz

Gmax

maximum power gain

IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C −

22

−

dB

F

noise figure

IC = 1 mA; VCE = 2 V; f = 900 MHz; ΓS = Γopt

1

−

dB

−

CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1998 Mar 11

2

Philips Semiconductors

Product specification

NPN 17 GHz wideband transistor

BFG403W

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

10

V

VCEO

collector-emitter voltage

open base

−

4.5

V

VEBO

emitter-base voltage

open collector

−

1

V

IC

collector current (DC)

−

3.6

mA

Ptot

total power dissipation

Ts ≤ 140 °C; note 1; see Fig.2

−

16

mW

Tstg

storage temperature

−65

+150

°C

Tj

operating junction temperature

−

150

°C

Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s

PARAMETER
thermal resistance from junction to soldering point

MGD957

20

handbook, halfpage

Ptot
(mW)

10

0
0

40

80

120

160
Ts (°C)

Fig.2 Power derating curve.

1998 Mar 11

3

VALUE

UNIT

820

K/W

Philips Semiconductors

Product specification

NPN 17 GHz wideband transistor

BFG403W

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL

PARAMETER

CONDITIONS
IC = 2.5 µA; IE = 0

MIN.

TYP.

MAX.

UNIT

10

−

−

V

V(BR)CBO

collector-base breakdown voltage

V(BR)CEO

collector-emitter breakdown voltage IC = 1 mA; IB = 0

4.5

−

−

V

V(BR)EBO

emitter-base breakdown voltage

IE = 2.5 µA; IC = 0

1

−

−

V

ICBO

collector-base leakage current

IE = 0; VCB = 4.5 V

−

−

15

nA

hFE

DC current gain

IC = 3 mA; VCE = 2 V; see Fig.3

50

80

120

Cc

collector capacitance

IE = ie = 0; VCB = 2 V; f = 1 MHz

−

170

−

fF

Ce

emitter capacitance

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

−

315

−

fF

Cre

feedback capacitance

IC = 0; VCB = 2 V; f = 1 MHz;
see Fig.4

−

20

−

fF

fT

transition frequency

IC = 3 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C; see Fig.5

−

17

−

GHz

Gmax

maximum power gain; note 1

IC = 0.5 mA; VCE = 1 V; f = 900 MHz; −
Tamb = 25 °C; see Figs 6 and 8

20

−

dB

−

22

−

dB

5

−

dB

IC = 3 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C; see Figs 7 and 8
S 21

2

F

insertion power gain

noise figure

IC = 0.5 mA; VCE = 1 V; f = 900 MHz; −
Tamb = 25 °C; see Fig.8
IC = 3 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C; see Fig.8

−

14

−

dB

IC = 1 mA; VCE = 2 V; f = 900 MHz;
ΓS = Γopt; see Fig.13

−

1

−

dB

IC = 1 mA; VCE = 2 V; f = 2 GHz;
ΓS = Γopt; see Fig.13

−

1.6

−

dB

PL1

output power at 1 dB gain
compression

IC = 1 mA; VCE = 1 V; f = 900 MHz;
ZS = ZS opt; ZL = ZL opt; note 2

−

−5

−

dBm

ITO

third order intercept point

IC = 1 mA; VCE = 1 V; f = 900 MHz;
ZS = ZS opt; ZL = ZL opt; note 2

−

6

−

dBm

Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.
2. ZS is optimized for noise; ZL is optimized for gain.

1998 Mar 11

4

Philips Semiconductors

Product specification

NPN 17 GHz wideband transistor

BFG403W

MGG678

120

MGG679

50
Cre

handbook, halfpage

handbook, halfpage

(fF)

hFE

40
80

(1)
(2)
(3)

30

20
40
10

0

0
0

2

4

IC (mA)

6

0

1

(1) VCE = 3 V.
(2) VCE = 2 V.
(3) VCE = 1 V.

IC = 0; f = 1 MHz.

Fig.3

Fig.4

DC current gain as a function of collector
current; typical values.

MGG680

20
fT

2

3

4

Feedback capacitance as a function of
collector-base voltage; typical values.

MGG709

30

handbook, halfpage

handbook, halfpage

(GHz)

MSG
(dB)

16

5
VCB (V)

20
12

8
10
4

0

0
1

IC (mA)

10

0

2

VCE = 2 V; f = 2 GHz; Tamb = 25 °C.

VCE = 2 V; f = 900 MHz.

Fig.5

Fig.6

Transition frequency as a function of
collector current; typical values.

1998 Mar 11

5

4

IC (mA)

6

Maximum stable gain as a function of
collector current; typical values.

Philips Semiconductors

Product specification

NPN 17 GHz wideband transistor

BFG403W

MGG711

MGG710

30

40

handbook, halfpage

handbook, halfpage

gain
(dB)

MSG
(dB)

MSG

30
20

20

S21

10
10

0

0
0

2

4

6

IC (mA)

102

10

VCE = 2 V; f = 2 GHz.

IC = 3 mA; VCE = 2 V.

Fig.7

Fig.8

Maximum stable gain as a function of
collector current; typical values.

103

Gain as a function of frequency;
typical values.

90°

handbook, full pagewidth

1.0
1
135°

2

0.5

0.8

45°

0.6

0.2

0.4

5

0.2
180°

0.2

0

0.5

1

0.2

−135°

5 40 MHz

2

0°

0

5

3 GHz

0.5

2

−45°

1
1.0
−90°

MGG713

IC = 3 mA; VCE = 2 V; Zo = 50 Ω.

Fig.9 Common emitter input reflection coefficient (S11); typical values.

1998 Mar 11

6

f (MHz)

104

Philips Semiconductors

Product specification

NPN 17 GHz wideband transistor

BFG403W

90°

handbook, full pagewidth

135°

45°

3 GHz

40 MHz

180°
25

20

15

10

0°

5

−135°

−45°

−90°

MGG714

IC = 3 mA; VCE = 2 V.

Fig.10 Common emitter forward transmission coefficient (S21); typical values.

90°

handbook, full pagewidth

135°

45°

3 GHz

0.05

0.04

0.03

0.02

0.01
0°

180°
40 MHz

−135°

−45°

−90°

MGG715

IC = 3 mA; VCE = 2 V.

Fig.11 Common emitter reverse transmission coefficient (S12); typical values.

1998 Mar 11

7

Philips Semiconductors

Product specification

NPN 17 GHz wideband transistor

BFG403W

90°

handbook, full pagewidth

1.0
1
135°

0.8

45°

2

0.5

0.6

0.2

0.4

5

0.2
180°

0.2

0

0.5

1

2

5

40 MHz
0°

0

5

0.2
3 GHz

−135°

0.5

2

−45°

1
1.0
−90°

MGG716

IC = 3 mA; VCE = 2 V; Zo = 50 Ω.

Fig.12 Common emitter output reflection coefficient (S22); typical values.

Noise data
VCE = 2 V; typical values.
f
(MHz)
900

2000

IC
(mA)

Fmin
(dB)

Γmag

Γangle

rn
(Ω)

0.5

0.9

0.91

4.7

1.41

1

1.1

0.83

5.1

1.12

2

1.4

0.71

5.1

0.97

3

1.6

0.62

5.0

0.88

4

1.9

0.56

4.9

0.84

5

2.1

0.50

4.2

0.82

0.5

1.8

0.71

27.5

1.47

1

1.6

0.74

26.1

1.11

2

1.8

0.64

26.3

0.93

3

2.1

0.56

26.1

0.91

4

2.4

0.48

26.7

0.9

5

2.8

0.45

25.8

0.85

MGG712

3

handbook, halfpage

Fmin
(dB)

(1)

2
(2)

1

0
0

2

4

IC (mA)

6

(1) VCE = 2 V; f = 2 GHz.
(2) VCE = 2 V; f = 900 MHz.

Fig.13 Minimum noise figure as a function of the
collector current; typical values.

1998 Mar 11

8

Philips Semiconductors

Product specification

NPN 17 GHz wideband transistor

BFG403W

SPICE parameters for the BFG403W die
SEQUENCE No.

PARAMETER

VALUE

SEQUENCE No.

UNIT

(2)(3)

PARAMETER

VALUE

UNIT

1

IS

5.554

aA

39

Cbp

145

fF

2

BF

145.0

−

40 (2)

Rsb1

25

Ω

3

NF

0.993

−

41 (3)

Rsb2

19

Ω

4

VAF

31.12

V

Notes

5

IKF

35.75

mA

6

ISE

35.35

fA

1. These parameters have not been extracted, the
default values are shown.

7

NE

3.000

−

8

BR

11.37

−

9

NR

0.985

−

10

VAR

1.874

V

11

IKR

0.014

A

12

ISC

57.08

aA

13

NC

1.546

−

14

RB

122.4

Ω

15

IRB

0.000

A

16

RBM

52.45

Ω

17

RE

1.511

Ω

18

RC

15.12

Ω

2. Bonding pad capacity Cbp in series with substrate
resistance Rsb1 between B′ and E′.
3. Bonding pad capacity Cbp in series with substrate
resistance Rsb2 between C′ and E′.

C cb

handbook, halfpage

L1
B

L2
B'

C be

C'
E'

C

Cce

XTB

1.500

−

(1)

EG

1.110

eV

21 (1)

XTI

3.000

−

22

CJE

36.61

fF

23

VJE

900.0

mV

24

MJE

0.346

−

25

TF

4.122

ps

26

XTF

68.20

−

27

VTF

2.004

V

28

ITF

0.179

A

29

PTF

0.000

deg

30

CJC

16.21

fF

31

VJC

556.9

mV

Cbe

80

fF

2

fF

19 (1)
20

MGD956

L3

E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.

Fig.14 Package equivalent circuit SOT343R2.

List of components (see Fig.14)
DESIGNATION

VALUE

UNIT

32

MJC

0.207

−

Ccb

33

XCJC

0.500

−

Cce

80

fF

TR

00.00

ns

L1

1.1

nH

1.1

nH

0.25

nH

34 (1)
(1)

CJS

78.59

fF

L2

36 (1)

VJS

418.3

mV

L3 (note 1)

37 (1)

MJS

0.239

−

38

FC

0.550

−

35

1998 Mar 11

Note
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.

9

Philips Semiconductors

Product specification

NPN 17 GHz wideband transistor

BFG403W

PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads

D

SOT343R

E

B

A

X

HE

y

v M A

e

3

4

Q

A
A1
c

2
w M B

1
bp

Lp

b1
e1

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)
UNIT

A

A1
max

bp

b1

c

D

E

e

e1

HE

Lp

Q

v

w

y

mm

1.1
0.8

0.1

0.4
0.3

0.7
0.5

0.25
0.10

2.2
1.8

1.35
1.15

1.3

1.15

2.2
2.0

0.45
0.15

0.23
0.13

0.2

0.2

0.1

OUTLINE
VERSION

REFERENCES
IEC

JEDEC

EIAJ

ISSUE DATE
97-05-21

SOT343R

1998 Mar 11

EUROPEAN
PROJECTION

10

Philips Semiconductors

Product specification

NPN 17 GHz wideband transistor

BFG403W

DEFINITIONS
Data Sheet Status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Mar 11

11

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Internet: http://www.semiconductors.philips.com

© Philips Electronics N.V. 1998

SCA57

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

125104/00/04/pp12

Date of release: 1998 Mar 11

Document order number:

9397 750 03387



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Title                           : NPN 17 GHz wideband transistor
Subject                         : BFG403W
Author                          : Philips Semiconductors
Keywords                        : NPN 17 GHz wideband transistor, BFG403W, BFG403W
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