BFP540 Datasheet. Www.s Manuals.com. Infineon
User Manual: Marking of electronic components, SMD Codes AT, AT*, AT****, AT-**, AT-***, AT1, AT2, AT=**, AT=***, ATC**, ATF**, ATI**, ATP, ATZ**, ATs. Datasheets BAT18-06 , BFP540, BST39, BST40, KB4312A-GRE, MIC803-46D3VC3, MIC803-46D3VM3, OPA2374AIDCN, RT8805GQV, RT8805PQV, RT9011-JMPQV, RT9014-GSPQV, RT9198-2HPU5, RT9198A-44GY, RT9198A-44PY, RT9818C-27GU3, SMAJ8.5A, SMBJ8.5A, SMBJ8.5CA, TS1909CX527, TS1909CX530, TS1909CX533, TS1909CX550.
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SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP540 ATs Pin Configuration 1=B 2=E 3=C Package 4=E SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 4.5 Collector-base voltage VCBO 14 Emitter-base voltage VEBO 1 Collector current IC 80 Base current IB 8 Total power dissipation Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 77°C 1) Thermal Resistance Junction - soldering point2) RthJS 290 K/W 1T is measured on the emitter lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-09-2001 SIEGET 45 BFP540 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. 4.5 5 6.5 V ICBO - - 200 nA IEBO - - 70 µA hFE 50 110 200 - - 0.14 0.24 pF - 0.33 - - 0.65 - - 0.9 1.4 - 21 - 16 18.5 - DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V V(BR)CEO AC Characteristics (verified by random sampling) Collector-base capacitance Ccb VCB = 2 V, f = 1 MHz Collector-emitter capacitance Cce VCE = 2 V, f = 1 MHz Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz Noise figure F IC = 5 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Gms Power gain, maximum stable 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain |S21|2 IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50 Third order intercept point at output IP3 VCE = 2 V, f = 1.8 GHz, ZS =ZSopt , ZL=ZLopt , IC = 20 mA IC = 7 mA 1dB compression point P-1dB VCE = 2 V, f = 1.8 GHz, ZS =ZSopt , ZL=ZLopt , IC = 20 mA IC = 7 mA dB dBm - 24 20 - - 12 4 - 1G ms = |S21 / S12 | 2 Aug-09-2001 SIEGET 45 BFP540 Common Emitter S-Parameters f GHz S11 MAG ANG S21 S12 S22 MAG ANG MAG ANG MAG ANG 42.176 40.33 26.564 15.46 7.897 5.257 3.895 3.027 2.471 179 165.1 121.2 96.5 72.9 56.5 41.6 28.1 16.2 0.0008 0.0068 0.0263 0.0397 0.0646 0.0892 0.1126 0.1313 0.1525 99.2 82.2 62.1 56.4 52.3 46.5 38.1 29.9 22.9 0.9567 0.9499 0.6533 0.3959 0.1912 0.0982 0.1022 0.1445 0.1764 -0.6 -12.1 -48.1 -68.2 -90.7 -117.9 180 147 121.8 7.05 6.922 6.567 5.687 3.983 2.913 2.251 1.765 1.439 -179.5 174.7 152.3 128 92.3 67 45.6 27.5 12.7 0.001 0.0087 0.0435 0.0782 0.1073 0.1111 0.1076 0.1028 0.1065 67.1 87.3 70.9 52 25.7 12.3 4.9 3.7 7.1 0.9961 0.9976 0.9485 0.8283 0.5958 0.4471 0.3504 0.2987 0.2491 -0.4 -3.7 -18 -33.3 -52.6 -63.7 -78.9 -96.5 -114.9 RN rn F502) |S21|2 2) - dB dB 0.16 0.13 0.13 0.11 0.12 0.18 0.36 0.86 0.93 1.13 1.31 1.67 2.17 2.98 21.5 17 14.1 11.9 9.5 7.9 5.6 VCE = 2 V, IC = 20 mA 0.01 0.1 0.5 1 2 3 4 5 6 0.5903 0.5827 0.4721 0.4148 0.413 0.4426 0.5064 0.5623 0.5989 -2.2 -22.1 -91.8 -137.4 178 153 133.2 119.5 109.6 V CE = 2V, IC = 5 mA 0.01 0.1 0.5 1 2 3 4 5 6 0.9394 0.937 0.904 0.823 0.68 0.6308 0.6442 0.6757 0.7029 -0.7 -7.6 -37.9 -73.1 -130 -170.9 156.4 134.7 119.7 Common Emitter Noise Parameters f Fmin 1) Ga 1) Γopt GHz dB dB MAG ANG 0.29 0.13 0.14 0.22 0.33 0.5 0.55 34 86 127 163 -153 -126 -107 8 6.5 6.5 5.5 6 9 18 VCE = 2 V, IC = 5 mA 0.9 1.8 2.4 3 4 5 6 0.69 0.9 1.06 1.2 1.47 1.78 2.11 22.7 17.6 15.2 13.6 11.5 10 8.4 1) Input matched for minimum noise figure, output for maximum gain 2) ZS = ZL = 50 For more and detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 3 Aug-09-2001 SIEGET 45 BFP540 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 82.84 aA BF = 107.5 - NF = 1 - VAF = 28.383 V IKF = 0.48731 A ISE = 11.15 pA NE = 3.19 - BR = 5.5 - NR = 1 - VAR = 19.705 V IKR = 0.02 A ISC = 19.237 aA NC = 1.172 - RB = 5.4 IRB = 0.72983 mA RBM = 1.3 RE = 0.31111 RC = 4 CJE = 1.8063 fF VJE = 0.8051 V MJE = 0.46576 - TF = 6.76 ps XTF = 0.4219 - VTF = 0.23794 V ITF = 1 mA PTF = 0 deg CJC = 234 fF VJC = 0.81969 V MJC = 0.30232 - XCJC = 0.3 - TR = 2.324 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.73234 - TNOM 300 K L BI = 0.47 nH L BO = 0.53 nH L EI = 0.23 nH L EO = 0.05 nH L CI = 0.56 nH L CO = 0.58 nH CBE = 136 fF CCB = 6.9 fF CCE = 134 fF All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001 SIEGET 45 BFP540 For non-linear simulation: Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. Simulation of the package is not necessary for frequencies < 100MHz. For higher frequencies please add the wiring of the package equivalent circuit around the non-linear transistor. Advantages of the common emitter configuration: Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted on the copper emitter leadframe. Please note, that the broadest lead is the emitter lead. 5 Aug-09-2001 SIEGET 45 Total power dissipation Ptot = f (TS ) BFP540 Transition frequency fT = f (IC) f = 1 GHz VCE = parameter in V 35 300 GHz mW fT P tot 25 200 4 20 3 150 15 2 100 1.5 10 1 50 5 0.5 0 0 20 40 60 80 100 120 °C 0 0 150 10 20 30 40 50 60 70 mA TS 90 IC Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load P totmax/P totDC = f (tp) 10 1 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 10 1 -7 10 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -6 10 -5 10 -4 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 Aug-09-2001 SIEGET 45 BFP540 Power gain Gma, Gms , |S21 |2 = f ( f ) Power gain Gma, Gms = f (I C) VCE = 2V, IC = 20 mA VCE = 2V f = parameter in GHz 50 30 dB dB 1 40 35 G G 20 2 30 Gms 15 3 25 4 20 10 5 Gma 15 6 |S21|2 5 10 5 0.0 1.0 2.0 3.0 GHz 4.0 0 0 6.0 10 20 30 40 50 60 70 mA 90 IC f Power gain Gma, Gms = f (VCE) Collector-base capacitance Ccb = f (VCB) IC = 20 mA f = 1MHz f = parameter in GHz 0.20 30 dB 1 pF Ccb 20 G 2 0.10 15 3 10 4 5 0.05 6 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 0.00 0.0 4.0 VCE 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0 VCB 7 Aug-09-2001 SIEGET 45 Noise figure F = f (IC ) Noise figure F = f (IC) VCE = 2 V, ZS = ZSopt VCE = 2 V, f = 1.8 GHz 4.0 BFP540 4.0 dB dB 2.5 2.5 F 3.0 F 3.0 2.0 2.0 1.5 1.5 f = 6GHz f = 5GHz f = 4GHz f = 3GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz 1.0 0.5 0.0 0 10 20 30 40 50 60 mA 1.0 ZS = 50Ohm ZS = Zsopt 0.5 0.0 0 80 10 20 30 40 50 60 IC mA 80 IC Noise figure F = f ( f ) Source impedance for min. VCE = 2 V, ZS = ZSopt noise figure vs. Frequency VCE = 2 V, IC = 5 mA / 20 mA 3.0 +j50 +j25 dB +j100 +j10 2.0 F 2.4GHz 1.8GHz 0.9GHz 3GHz 0 1.5 10 25 50 100 4GHz 1.0 5mA 20mA 5GHz -j10 IC = 20mA IC = 5mA 6GHz 0.5 -j25 -j100 -j50 0.0 0 1 2 3 4 GHz 6 f 8 Aug-09-2001 www.s-manuals.com
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