BFR182 Datasheet. Www.s Manuals.com. Infineon
User Manual: Marking of electronic components, SMD Codes RG, RG***, RG-, RG-***, RG=***, RGW, RGp, RGs, RGt, Rg. Datasheets 1SMA13AT3G, BD53E49G, BFR182, BZB84-B62, PZU5.6B1A/DG, RP130K181A, RT9170-28GB, RT9170-28PB, SMAJ58A, TS19705CX6.
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BFR182 NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR182 RGs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 93 °C 1) Thermal Resistance Junction - soldering point 2) RthJS 230 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Aug-09-2001 BFR182 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 10 mA, VCE = 8 V 2 Aug-09-2001 BFR182 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 6 8 - Ccb - 0.33 0.5 Cce - 0.2 - Ceb - 0.6 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1.2 - f = 1.8 GHz - 1.9 - IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 17.5 - f = 1.8 GHz - 11.5 - - 14.5 - - 9 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Aug-09-2001 BFR182 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.8499 fA BF = 84.113 - NF = 0.56639 - VAF = 21.742 V IKF = 0.14414 A ISE = 8.4254 fA NE = 0.91624 - BR = 10.004 - NR = 0.54818 - VAR = 2.2595 V IKR = 0.03978 A ISC = 5.9438 fA NC = 0.5641 - RB = 3.4217 IRB = 0.071955 mA RBM = 2.8263 RE = 2.1858 RC = 1.8159 CJE = 8.8619 fF VJE = 1.0378 V MJE = 0.40796 - TF = 22.72 ps XTF = 0.43147 - VTF = 0.34608 V ITF = 6.5523 mA PTF = 0 deg CJC = 490.25 fF VJC = 1.0132 V MJC = 0.31068 - XCJC = 0.19281 - TR = 1.7541 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.64175 - TNOM 300 K L BI = 0.85 nH L BO = 0.51 nH L EI = 0.69 nH L EO = 0.61 nH L CI = 0 nH L CO = 0.49 nH C BE = 73 fF C CB = 84 fF C CE = 165 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001 BFR182 Total power dissipation Ptot = f (TS ) 300 P tot mW 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Aug-09-2001 BFR182 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 1.0 10 pF 10V GHz 8 5V 0.7 7 3V fT Ccb 8V 0.8 0.6 6 2V 0.5 5 0.4 4 0.3 3 0.2 2 0.1 1 1V 0.0 0 4 8 12 V 16 0.7V 0 0 22 5 10 15 mA VCB 25 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 12 20 10V 3V dB dB 2V 10V G G 3V 16 2V 8 14 1V 6 12 1V 0.7V 4 10 0.7V 8 0 5 10 15 mA 2 0 25 IC 4 8 12 16 20 mA 26 IC 6 Aug-09-2001 BFR182 Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 20 30 IC=10mA 8V dB 0.9GHz dBm 5V IP 3 16 G 0.9GHz 3V 20 14 2V 15 12 1.8GHz 1V 10 10 1.8GHz 5 8 6 0 2 4 6 V 8 0 0 12 5 10 V 15 VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 32 28 IC=10mA dB 28 24 26 22 24 20 S21 G dB 22 16 18 14 16 12 14 10 12 8 10 IC =10mA 18 20 6 10V 1V 8 6 4 0.0 25 0.7V 0.5 1.0 1.5 2.0 2.5 GHz 1V 2 0.7V 0 0.0 3.5 f 10V 4 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 7 Aug-09-2001 www.s-manuals.com
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