BFR182 Datasheet. Www.s Manuals.com. Infineon

User Manual: Marking of electronic components, SMD Codes RG, RG***, RG-, RG-***, RG=***, RGW, RGp, RGs, RGt, Rg. Datasheets 1SMA13AT3G, BD53E49G, BFR182, BZB84-B62, PZU5.6B1A/DG, RP130K181A, RT9170-28GB, RT9170-28PB, SMAJ58A, TS19705CX6.

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BFR182

Aug-09-20011

NPN Silicon RF Transistor

For low noise, high-gain broadband amplifiers at

collector currents from 1 mA to 20 mA

fT = 8 GHz

F = 1.2 dB at 900 MHz

1

2

3

VPS05161

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFR182 RGs 1 = B 2 = E 3 = C SOT23

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VCEO 12 V

Collector-emitter voltage VCES 20

Collector-base voltage VCBO 20

Emitter-base voltage VEBO 2

Collector current IC35 mA

Base current IB4

Total power dissipation

TS 93 °C 1)

Ptot 250 mW

Junction temperature Tj150 °C

Ambient temperature TA-65 ... 150

Storage temperature Tst

g

-65 ... 150

Thermal Resistance

Junction - soldering point2) RthJS 230 K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

BFR182

Aug-09-20012

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO 12 - - V

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

ICES - - 100 µA

Collector-base cutoff current

VCB = 10 V, IE = 0

ICBO - - 100 nA

Emitter-base cutoff current

VEB = 1 V, IC = 0

IEBO - - 1 µA

DC current gain

IC = 10 mA, VCE = 8 V

hFE 50 100 200 -

BFR182

Aug-09-20013

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

AC characteristics (verified by random sampling)

Transition frequency

IC = 15 mA, VCE = 8 V, f = 500 MHz

fT6 8 - GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb - 0.33 0.5 pF

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Cce - 0.2 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb - 0.6 -

Noise figure

IC = 3 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

f = 1.8 GHz

F

-

-

1.2

1.9

-

-

dB

Power gain, maximum available 1)

IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

f = 1.8 GHz

Gma

-

-

17.5

11.5

-

-

Transducer gain

IC = 10 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

f = 1.8 GHz

|S21e|2

-

-

14.5

9

-

-

1Gma = |S21 / S12| (k-(k2-1)1/2)

BFR182

Aug-09-20014

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :

Transistor Chip Data

IS = 4.8499 fA

VAF = 21.742 V

NE = 0.91624 -

VAR = 2.2595 V

NC = 0.5641 -

RBM = 2.8263

CJE = 8.8619 fF

TF = 22.72 ps

ITF = 6.5523 mA

VJC = 1.0132 V

TR = 1.7541 ns

MJS = 0-

XTI = 3 -

BF = 84.113 -

IKF = 0.14414 A

BR = 10.004 -

IKR = 0.03978 A

RB = 3.4217

RE = 2.1858

VJE = 1.0378 V

XTF = 0.43147 -

PTF = 0 deg

MJC = 0.31068 -

CJS = 0fF

XTB = 0-

FC = 0.64175 -

NF = 0.56639 -

ISE = 8.4254 fA

NR = 0.54818 -

ISC = 5.9438 fA

IRB = 0.071955 mA

RC = 1.8159

MJE = 0.40796 -

VTF = 0.34608 V

CJC = 490.25 fF

XCJC = 0.19281 -

VJS = 0.75 V

EG = 1.11 eV

TNOM 300 K

All parameters are ready to use, no scalling is necessary.

Extracted on behalf of Infineon Technologies AG by:

Institut für Mobil-und Satellitentechnik (IMST)

Package Equivalent Circuit:

LBI = 0.85 nH

LBO = 0.51 nH

LEI = 0.69 nH

LEO = 0.61 nH

LCI = 0nH

LCO = 0.49 nH

CBE = 73 fF

CCB = 84 fF

CCE = 165 fF

Valid up to 6GHz

For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales

office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

BFR182

Aug-09-20015

Total power dissipation Ptot = f (TS)

0 20 40 60 80 100 120 °C 150

TS

0

50

100

150

200

mW

300

P

tot

Permissible Pulse Load RthJS = f (tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

1

10

2

10

3

10

K/W

R

thJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Permissible Pulse Load

Ptotmax/PtotDC = f (tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

0

10

1

10

2

10

-

P

totmax

/ P

totDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

BFR182

Aug-09-20016

Collector-base capacitance Ccb = f (VCB)

f = 1MHz

0 4 8 12 16 V22

VCB

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

pF

1.0

C

cb

0 4 8 12 16 V22

VCB

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

pF

1.0

C

cb

Transition frequency fT = f (IC)

VCE = Parameter

0 5 10 15 mA 25

IC

0

1

2

3

4

5

6

7

8

GHz

10

f

T

10V

8V

5V

3V

2V

1V

0.7V

Power Gain Gma, Gms = f(IC)

f = 0.9GHz

VCE = Parameter

0 5 10 15 mA 25

IC

8

10

12

14

16

dB

20

G

10V

3V

2V

1V

0.7V

Power Gain Gma, Gms = f(IC)

f = 1.8GHz

VCE = Parameter

0 4 8 12 16 20 mA 26

IC

2

4

6

8

dB

12

G

10V

3V

2V

1V

0.7V

BFR182

Aug-09-20017

Intermodulation Intercept Point IP3=f(IC)

(3rd order, Output, ZS=ZL=50 )

VCE = Parameter, f = 900MHz

0 5 10 15 V25

IC

0

5

10

15

20

dBm

30

IP

3

8V

5V

3V

2V

1V

Power Gain Gma, Gms = f(VCE):_____

|S21|2 = f(VCE):---------

f = Parameter

02468V12

VCE

6

8

10

12

14

16

dB

20

G

0.9GHz

1.8GHz

0.9GHz

1.8GHz

IC=10mA

Power Gain |S21|2= f(f)

VCE = Parameter

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

f

0

2

4

6

8

10

12

14

16

18

20

22

24

dB

28

S

21

10V

1V

0.7V

IC=10mA

Power Gain Gma, Gms = f(f)

VCE = Parameter

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

f

4

6

8

10

12

14

16

18

20

22

24

26

28

dB

32

G

10V

1V

0.7V

IC=10mA

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