Genesys Bfr93a Infineon
User Manual: Marking of electronic components, SMD Codes R2**, R23, R24, R25, R29A, R29B, R29C, R29D, R29E, R29F, R2A, R2F, R2G, R2T, R2X, R2p, R2s. Datasheets 2SC3356, BFR93A, ELM9732CAA, MMST2907A, MMST3906, MMST4401, MMST4403, MMSTA56, REF2912, REF2920, REF2925, REF2930, REF2933, REF2940, SST2907A, SST3906, SST4401, SST4403, SSTA56, UMT2907A, UMT3906.
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BFR 93A NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 50 Base current IB 6 Total power dissipation, TS 63 °C 1) Ptot 300 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA Thermal Resistance Junction - soldering point RthJS 290 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-13-1999 BFR 93A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 10 µA hFE 50 100 200 - DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V 2 Oct-13-1999 BFR 93A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 4.5 6 - Ccb - 0.58 0.9 Cce - 0.23 - Ceb - 1.7 - AC characteristics (verified by random sampling) Transition frequency fT GHz IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 2 - f = 1.8 GHz - 3.3 - f = 900 MHz - 13.5 - f = 1.8 GHz - 8.5 - - 12 - - 6.5 - Power gain, maximum available 1) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , |S21e|2 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Oct-13-1999 BFR 93A SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 8.6752 fA BF = 137.63 - NF = 0.93633 - VAF = 20.011 V IKF = 0.33395 A ISE = 2619.3 fA NE = 1.5466 - BR = 59 - NR = 0.88761 - VAR = 26.834 V IKR = 0.015129 A ISC = 0.70823 fA NC = 1.95 - RB = 7.2326 IRB = 0.043806 mA RBM = 3.4649 RE = 1.0075 RC = 0.13193 CJE = 3.1538 fF VJE = 0.70393 V MJE = 0.5071 - TF = 33.388 ps XTF = 0.28319 - VTF = 0.17765 V ITF = 2.5184 mA PTF = 0 deg CJC = 1039.5 fF VJC = 0.72744 V MJC = 0.34565 - XCJC = 0.21422 - TR = 1.1061 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.75935 - TNOM 300 K L BI = 0.85 nH L BO = 0.51 nH L EI = 0.69 nH L EO = 0.61 nH L CI = 0 nH L CO = 0.49 nH C BE = 73 fF C CB = 84 fF C CE = 165 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Oct-13-1999 BFR 93A Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 400 mW P tot 300 TS 250 200 TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Oct-13-1999 BFR 93A Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 6.0 1.5 pF 10V GHz 2V 5.0 1.2 4.5 4.0 1.0 fT Ccb 1.1 0.9 1V 3.5 0.8 3.0 0.7 2.5 0.6 0.5 2.0 0.4 1.5 0.3 1.0 0.2 0.5 0.1 0.0 0 0.7V 4 8 12 16 V 0.0 0 22 10 20 30 40 mA VCB IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 14 60 9 10V 5V 10V dB 5V 3V dB 2V 3V 7 G G 2V 10 6 5 1V 8 4 1V 3 6 2 0.7V 4 0 10 20 30 40 mA 0.7V 1 0 60 IC 10 20 30 40 mA 60 IC 6 Oct-13-1999 BFR 93A Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) |S21|2 = f(VCE):--------- (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz f = Parameter 16 32 IC=30mA 8V dBm dB 0.9GHz 5V 28 0.9GHz 26 G IP 3 12 10 3V 24 22 2V 1.8GHz 20 8 1.8GHz 18 6 16 1V 14 4 12 2 0 2 4 6 V 8 10 0 12 10 20 30 mA 40 VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 32 30 IC=30mA IC =30mA dB dB 22 S21 24 G 60 20 18 16 14 12 10 8 6 10V 1V 4 10V 1V 2 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 0.7V -2 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 7 Oct-13-1999
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