Genesys Bfr93a Infineon

User Manual: Marking of electronic components, SMD Codes R2**, R23, R24, R25, R29A, R29B, R29C, R29D, R29E, R29F, R2A, R2F, R2G, R2T, R2X, R2p, R2s. Datasheets 2SC3356, BFR93A, ELM9732CAA, MMST2907A, MMST3906, MMST4401, MMST4403, MMSTA56, REF2912, REF2920, REF2925, REF2930, REF2933, REF2940, SST2907A, SST3906, SST4401, SST4403, SSTA56, UMT2907A, UMT3906.

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BFR 93A
Oct-13-19991
NPN Silicon RF Transistor
For low-noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
1
2
3
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR 93A R2s 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol UnitValue
Collector-emitter voltage 12VCEO V
Collector-emitter voltage VCES 20
Collector-base voltage 20VCBO
2VEBO
Emitter-base voltage
Collector current IC50 mA
Base current IB6
Total power dissipation, TS 63 °C 1) Ptot 300 mW
Junction temperature Tj150 °C
Ambient temperature TA-65 ... 150
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point RthJS 290 K/W
1TS is measured on the collector lead at the soldering point to the pcb
BFR 93A
Oct-13-19992
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 12 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
ICES - - 100 µA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 2 V, IC = 0
IEBO - - 10 µA
DC current gain
IC = 30 mA, VCE = 8 V
hFE 50 100 200 -
BFR 93A
Oct-13-19993
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 8 V, f = 500 MHz
fT4.5 6 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 0.58 0.9 pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce - 0.23 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 1.7 -
Noise figure
IC = 5 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
f = 1.8 GHz
F
-
-
2
3.3
-
-
dB
Power gain, maximum available 1)
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
f = 1.8 GHz
Gma
-
-
13.5
8.5
-
-
Transducer gain
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
12
6.5
-
-
1Gma = |S21 / S12| (k-(k2-1)1/2)
BFR 93A
Oct-13-19994
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS = 8.6752 fA
VAF = 20.011 V
NE = 1.5466 -
VAR = 26.834 V
NC = 1.95 -
RBM = 3.4649
CJE = 3.1538 fF
TF = 33.388 ps
ITF = 2.5184 mA
VJC = 0.72744 V
TR = 1.1061 ns
MJS = 0-
XTI = 3 -
BF = 137.63 -
IKF = 0.33395 A
BR = 59 -
IKR = 0.015129 A
RB = 7.2326
RE = 1.0075
VJE = 0.70393 V
XTF = 0.28319 -
PTF = 0 deg
MJC = 0.34565 -
CJS = 0fF
XTB = 0-
FC = 0.75935 -
NF = 0.93633 -
ISE = 2619.3 fA
NR = 0.88761 -
ISC = 0.70823 fA
IRB = 0.043806 mA
RC = 0.13193
MJE = 0.5071 -
VTF = 0.17765 V
CJC = 1039.5 fF
XCJC = 0.21422 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitentechnik (IMST)
1996 SIEMENS AG
Package Equivalent Circuit:
LBI = 0.85 nH
LBO = 0.51 nH
LEI = 0.69 nH
LEO = 0.61 nH
LCI = 0nH
LCO = 0.49 nH
CBE = 73 fF
CCB = 84 fF
CCE = 165 fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
BFR 93A
Oct-13-19995
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
TA,TS
0
50
100
150
200
250
300
mW
400
P
tot
TS
TA
Permissible Pulse Load RthJS = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BFR 93A
Oct-13-19996
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0 4 8 12 16 V22
VCB
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
pF
1.5
C
cb
Transition frequency fT = f (IC)
VCE = Parameter
0 10 20 30 40 mA 60
IC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
GHz
6.0
f
T
10V
2V
1V
0.7V
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
0 10 20 30 40 mA 60
IC
4
6
8
10
dB
14
G
10V
5V
3V
2V
1V
0.7V
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
0 10 20 30 40 mA 60
IC
1
2
3
4
5
6
7
dB
9
G
10V
5V
3V
2V
1V
0.7V
BFR 93A
Oct-13-19997
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50 )
VCE = Parameter, f = 900MHz
0 10 20 30 40 mA 60
IC
10
12
14
16
18
20
22
24
26
28
dBm
32
IP
3
8V
5V
3V
2V
1V
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
02468V12
VCE
2
4
6
8
10
12
dB
16
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
IC=30mA
Power Gain |S21|2= f(f)
VCE = Parameter
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
-2
2
6
10
14
18
22
dB
30
S
21
10V
1V
0.7V
IC=30mA
Power Gain Gma, Gms = f(f)
VCE = Parameter
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
0
4
8
12
16
20
24
dB
32
G
10V
1V
0.7V
IC=30mA

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