BGA2011 900 MHz High Linear Low Noise. Amplifier Philips

User Manual: Marking of electronic components, SMD Codes A5, A5*, A5**, A5***, A5-, A5-**, A5-***. Datasheets 1S2837, BGA2011, EMA5, FMA5A, FMMD2837, HSMS-2805, MIC803-40D3VC3, MIC803-40D3VM3, MMBD2837, RT9011-DKPJ6, RT9011-JSPQV, RT9198-18PU5, RT9198-33PY, RT9818A-41PU3, Si2305ADS, Si2305DS, Si9183DT-28-T1, TPS3831E16DQNR, UDZS27B, UMA5N.

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DATA SHEET
Product specification
Supersedes data of 2000 Sep 06 2000 Dec 04
DISCRETE SEMICONDUCTORS
BGA2011
900 MHz high linear low noise
amplifier
b
ook, halfpage
MBD128
2000 Dec 04 2
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
FEATURES
•Low current, low voltage
•High linearity
•High power gain
•Low noise
•Integrated temperature compensated biasing
•Control pin for adjustment bias current.
APPLICATIONS
•RF front end
•Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
PINNING
PIN DESCRIPTION
1 RF in
2V
C
3V
S
4 RF out
5, 6 GND
handbook, halfpage
Top view
MBL251
BIAS
CIRCUIT
RF in
RF out
GND
VS
VC
132
4
56
Fig.1 Simplified outline (SOT363) and symbol.
Marking code:A5-
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VSDC supply voltage RF input AC coupled 3 4.5 V
ISDC supply current 15 −mA
ICDC control current VC=V
S0.11 −mA
|s21|2insertion power gain in application circuit, see Fig.2;
f = 900 MHz
19 −dB
NF noise figure IS= 15 mA; f = 900 MHz 1.7 −dB
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VSDC supply voltage RF input AC coupled −4.5 V
VCvoltage on control pin −VSV
ISsupply current forced by DC voltage on RF input −30 mA
ICcontrol current −0.25 mA
Ptot total power dissipation Ts≤100 °C−135 mW
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −150 °C
2000 Dec 04 3
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; VS=3V; I
S= 15 mA; f = 900 MHz; Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction
to solder point
Ptot = 135 mW; Ts≤100 °C 350 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ISsupply current 10 15 20 mA
ICcontrol current −0.11 −mA
RLIN return losses input typical application; see Fig.2 −−11 −dB
high IP3 (see Fig.2; stripline = 0 mm) −−11 −dB
high IP3 (see Fig.2; stripline = 1.5 mm) −−17 −dB
RL OUT return losses output typical application; see Fig.2 −−11 −dB
high IP3 (see Fig.2; stripline = 0 mm) −−12 −dB
high IP3 (see Fig.2; stripline = 1.5 mm) −−14 −dB
|s21|2insertion power gain typical application; see Fig.2 −15 −dB
high IP3 (see Fig.2; stripline = 0 mm) −19 −dB
high IP3 (see Fig.2; stripline = 1.5 mm) −16 −dB
NF noise figure typical application; see Fig.2;
IS=15mA
−1.5 −dB
high IP3 (see Fig.2; stripline = 0 mm) −1.6 −dB
high IP3 (see Fig.2; stripline = 1.5 mm) −1.7 −dB
IP3in input intercept point typical application; see Fig.2 −−2−dBm
high IP3 (see Fig.2; stripline = 0 mm) −4−dBm
high IP3 (see Fig.2; stripline = 1.5 mm) −10 −dBm
2000 Dec 04 4
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
APPLICATION INFORMATION
List of components (see Fig.2)
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (εr= 6.15),
board thickness = 0.64 mm, copper thickness = 35 µm, gold thickness = 5 µm.
COMPONENT DESCRIPTION TYPICAL
APPLICATION HIGH IP3
APPLICATION DIMENSIONS
C1, C2 multilayer ceramic chip capacitor 100 pF 100 pF 0603
C3, C5 multilayer ceramic chip capacitor 22 nF 22 nF 0603
C4 multilayer ceramic chip capacitor 5.6 pF 5.6 pF 0603
C6 multilayer ceramic chip capacitor −2 x 100 nF 0805
L1 SMD inductor −10 nH 0603
L2 SMD inductor −8.2 nH 0603
handbook, full pagewidth
GND
OUT
stripline
BIAS
CIRCUIT
C1
C6
L1
VCL2
RF in
VS
VC
IN
C4
SOT363
C5 C2
RF out
C3
VS
MLD480
Fig.2 Application circuit.
2000 Dec 04 5
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
handbook, halfpage
00f (MHz)
gain
(dB)
1000 3000
30
10
20
2000
MLD481
Gmax
s21 2
Fig.3 Insertion gain (|s21|2) and Gmax as
functions of frequency; typical values.
IC= 15 mA; VS=V
C= 3 V; PD=−30 dBm; Zo=50Ω.
handbook, halfpage
001 V
C
(V)
gain
(dB)
3
20
15
5
10
0
IS
(mA)
IS
IS
20
15
5
10
2
MLD482
s21 2
f = 900 MHz; VS= 3 V; PD=−30 dBm.
Fig.4 Insertion gain and supply current as
functions of control voltage; typical values.
handbook, halfpage
20
10
5
0
15
MLD483
10−310−210−1
IC (mA)
s21 2
(dB)
f = 900 MHz; VS= 4 V; PD=−30 dBm.
Fig.5 Insertion gain as a function of control
current; typical values.
handbook, halfpage
515
15
5
0
10
10
MLD484
IS (mA)
IP3out
(dBm)
IP3in
(dBm)
0
−10
−15
−5
IP3out
IP3in
VS=V
C= 3 V; PD=−30 dBm (both tones); f = 900 MHz; ∆f = 100 kHz.
Fig.6 Output and input 3rd order intercept point
as a function of supply current;
typical application; typical values.
2000 Dec 04 6
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
handbook, halfpage
515
2
0
0.4
0.8
1.2
1.6
10 IS (mA)
NF
(dB)
MLD485
Fig.7 Noise figure as a function of supply
current; typical values.
VS=V
C= 3 V; f = 900 MHz.
Scattering parameters
VS=V
C=3V; P
D=−30 dBm; Zo=50Ω; Tamb =25°C
f
(MHz)
s11 s21 s12 s22
MAGNITUDE
(ratio) ANGLE
(deg) MAGNITUDE
(ratio) ANGLE
(deg) MAGNITUDE
(ratio) ANGLE
(deg) MAGNITUDE
(ratio) ANGLE
(deg)
100 0.553 −22.45 16.198 160.5 0.006 76.72 0.115 −87.98
200 0.499 −42.12 14.354 145.4 0.012 67.53 0.184 −113.5
400 0.394 −71.44 10.688 124.6 0.018 59.55 0.256 −141.2
600 0.331 −90.58 8.156 112.2 0.021 58.29 0.283 −158.1
800 0.295 −104.0 6.512 103.9 0.024 60.91 0.293 −170.5
1000 0.276 −114.9 5.415 97.72 0.027 64.65 0.298 178.7
1200 0.267 −124.2 4.640 93.01 0.032 69.04 0.304 169.5
1400 0.262 −134.2 4.112 89.10 0.037 73.22 0.310 162.5
1600 0.270 −144.2 3.659 85.21 0.043 75.43 0.311 157.0
1800 0.287 −152.7 3.336 82.21 0.049 77.84 0.309 152.7
2000 0.309 −159.7 3.045 78.21 0.057 78.60 0.312 150.5
2200 0.339 −166.2 2.849 73.94 0.066 77.96 0.304 149.6
2400 0.360 −172.0 2.680 69.19 0.076 75.04 0.291 151.4
2600 0.390 −175.9 2.511 64.60 0.086 74.92 0.292 149.2
2800 0.398 178.0 2.332 59.20 0.094 69.95 0.278 148.4
3000 0.392 173.9 2.108 56.72 0.099 69.12 0.317 140.0
2000 Dec 04 7
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
handbook, full pagewidth
MLD486
0
0.2
0.6
0.4
0.8
1.0
1.0
+5
+2
+1
+0.5
+0.2
0
−0.2
−0.5
−1
−2
−5
0.2 0.5 1
3 GHz
2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
900 MHz
100 MHz
IC= 15 mA; VS=V
C= 3 V; PD=−30 dBm; Zo=50Ω.
Fig.8 Common emitter input reflection coefficient (s11); typical values.
handbook, full pagewidth
MLD487
20 16 12 8 4
180°
−135°
−90°
−45°
0°
45°
90°
135°
500 MHz
3 GHz
900 MHz
1.8 GHz
100 MHz
IC= 15 mA; VS=V
C= 3 V; PD=−30 dBm; Zo=50Ω.
Fig.9 Common emitter forward transmission coefficient (s21); typical values.
2000 Dec 04 8
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
handbook, full pagewidth
MLD488
20 16 12 8 4
180°
−135°
−90°
−45°
0°
45°
90°
135°
3 GHz
100 MHz
Fig.10 Common emitter reverse transmission coefficient (s12); typical values.
IC= 15 mA; VS=V
C= 3 V; PD=−30 dBm; Zo=50Ω.
handbook, full pagewidth
MLD489
0
0.2
0.6
0.4
0.8
1.0
1.0
+5
+2
+1
+0.5
+0.2
0
−0.2
−0.5
−1
−2
−5
0.2 0.5 1
3 GHz
2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
100 MHz
900 MHz
IC= 15 mA; VS=V
C= 3 V; PD=−30 dBm; Zo=50Ω.
Fig.11 Common emitter output reflection coefficient (s22); typical values.
2000 Dec 04 9
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
wBM
b
p
D
e
1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT363
UNIT A1
max bpcDEe
1H
E
L
p
Qywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28
2000 Dec 04 10
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS PRODUCT
STATUS DEFINITIONS (1)
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified
2000 Dec 04 11
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000 70
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