BSC085N025S G Datasheet. Www.s Manuals.com. Bsc085n025sg Infineon

User Manual: Marking of electronic components, SMD Codes 85, 8510, 853**, 8550, 85A, 85N025S. Datasheets BSC085N025S G, CHL8510CRT, MMBD1701, MMBD1701A, PXT8550, SP6853S26RG, ST8835, UDZS22B.

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BSC085N025S G

OptiMOS®2 Power-Transistor

Product Summary

Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters

V DS

25

V

R DS(on),max

8.5

mΩ

ID

35

A

1

• Qualified according to JEDEC for target applications
• Logic level / N-channel
• Excellent gate charge x R DS(on) product (FOM)
PG-TDSON-8

• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Type

Package

Marking

BSC085N025S G

PG-TDSON-8

85N025S

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter

Symbol Conditions

Continuous drain current

ID

Value

T C=25 °C

35

T C=100 °C

35

T A=25 °C,
R thJA=45 K/W 2)
I D,pulse

T C=25 °C3)

140

Avalanche energy, single pulse

E AS

I D=35 A, R GS=25 Ω

120

Reverse diode dv /dt

dv /dt

I D=35 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C

6

Gate source voltage

V GS

Power dissipation

P tot

T A=25 °C,
R thJA=45 K/W 2)
Operating and storage temperature

T j, T stg

Rev. 1.1

mJ
kV/µs

±20

V

52

W

2.8
-55 ... 150

IEC climatic category; DIN IEC 68-1

A

14

Pulsed drain current

T C=25 °C

Unit

°C

55/150/56
page 1

2008-04-25

BSC085N025S G
Parameter

Values

Symbol Conditions

Unit

min.

typ.

max.

-

-

2.4

minimal footprint

-

-

62

6 cm2 cooling area2)

-

-

45

25

-

-

Thermal characteristics
Thermal resistance, junction - case

R thJC

Thermal resistance,

R thJA

junction - ambient

K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

Gate threshold voltage

V GS(th)

V DS=V GS, I D=25 µA

1.2

1.6

2

Zero gate voltage drain current

I DSS

V DS=25 V, V GS=0 V,
T j=25 °C

-

0.1

1

V DS=25 V, V GS=0 V,
T j=125 °C

-

10

100

V

µA

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

10

100

nA

Drain-source on-state resistance

R DS(on)

V GS=4.5 V, I D=25 A

-

10.5

13.1

mΩ

V GS=10 V, I D=35 A

-

7.1

8.5

-

1.2

-

Ω

25

50

-

S

Gate resistance

RG

Transconductance

g fs

1)

|V DS|>2|I D|R DS(on)max,
I D=35 A

J-STD20 and JESD22

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)

Rev. 1.1

See figure 3

page 2

2008-04-25

BSC085N025S G
Parameter

Values

Symbol Conditions

Unit

min.

typ.

max.

-

1350

1800

-

518

689

Dynamic characteristics
Input capacitance

C iss

Output capacitance

C oss

Reverse transfer capacitance

Crss

-

66

99

Turn-on delay time

t d(on)

-

4.7

7

Rise time

tr

-

4

6

Turn-off delay time

t d(off)

-

18

27

Fall time

tf

-

3

5

Gate to source charge

Q gs

-

4.6

6.2

Gate charge at threshold

Q g(th)

-

2.2

2.9

Gate to drain charge

Q gd

-

3.2

4.8

Switching charge

Q sw

-

5.7

8.1

Gate charge total

Qg

-

11

14

Gate plateau voltage

V plateau

-

3.4

-

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,
V GS=0 to 5 V

-

10

13

Output charge

Q oss

V DD=15 V, V GS=0 V

-

11

15

-

-

35

-

-

140

V GS=0 V, V DS=15 V,
f =1 MHz

V DD=15 V, V GS=10 V,
I D=25 A, R G=2.7 Ω

pF

ns

Gate Charge Characteristics 4)

V DD=15 V, I D=25 A,
V GS=0 to 5 V

nC

V
nC

Reverse Diode
Diode continous forward current

IS

Diode pulse current

I S,pulse

Diode forward voltage

V SD

V GS=0 V, I F=35 A,
T j=25 °C

-

0.93

1.1

V

Reverse recovery charge

Q rr

V R=15 V, I F=I S,
di F/dt =400 A/µs

-

-

10

nC

4)

Rev. 1.1

T C=25 °C

A

See figure 16 for gate charge parameter definition

page 3

2008-04-25

BSC085N025S G
1 Power dissipation

2 Drain current

P tot=f(T C)

I D=f(T C); V GS≥10 V

60

40

50
30

I D [A]

P tot [W]

40

30

20

20
10
10

0

0
0

40

80

120

160

0

40

T C [°C]

80

120

160

T C [°C]

3 Safe operating area

4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C; D =0

Z thJC=f(t p)

parameter: t p

parameter: D =t p/T

103

101

limited by on-state
resistance

1 µs
0.5

102

100

100 µs

101

0.2

Z thJC [K/W]

I D [A]

10 µs

0.1
0.05
0.02

10-1

1 ms

0.01
single pulse

DC

100
10

10-2
-1

10

0

10

1

10

2

V DS [V]

Rev. 1.1

10-5

10-4

10-3

10-2

10-1

100

t p [s]

page 4

2008-04-25

BSC085N025S G
5 Typ. output characteristics

6 Typ. drain-source on resistance

I D=f(V DS); T j=25 °C

R DS(on)=f(I D); T j=25 °C

parameter: V GS

parameter: V GS

70

30

3V

10 V

3.4 V

4V

3.7 V

3.2 V
4.5 V

60

25
4V

50

R DS(on) [mΩ]

20

I D [A]

40
3.7 V

30

4.5 V

10

3.4 V

20

15

10 V

3.2 V

5

10

3V
2.8 V

0

0
0

1

2

3

0

20

V DS [V]

40

60

80

60

80

I D [A]

7 Typ. transfer characteristics

8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max

g fs=f(I D); T j=25 °C

parameter: T j
70

60

60

50

50

40

40

I D [A]

g fs [S]

70

30

20

30

20

10

10

150 °C
25 °C

0

0
0

1

2

3

4

5

Rev. 1.1

0

20

40

I D [A]

V GS [V]

page 5

2008-04-25

BSC085N025S G
9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R DS(on)=f(T j); I D=35 A; V GS=10 V

V GS(th)=f(T j); V GS=V DS
parameter: I D

15

2.4

2

12

250 µA

1.6

98 %

V GS(th) [V]

R DS(on) [mΩ]

9
typ

6

25 µA

1.2

0.8

3
0.4

0

0
-60

-10

40

90

140

190

-60

-10

40

90

140

190

T j [°C]

T j [°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz

I F=f(V SD)
parameter: T j

104

103

10000

Ciss

103

25 °C, 98%

102

1000

Coss

150 °C, 98%

I F [A]

C [pF]
102

101

100

Crss

100

10

0

10

20

30

V DS [V]

Rev. 1.1

25 °C

150 °C

0

0.5

1

1.5

2

V SD [V]

page 6

2008-04-25

BSC085N025S G
13 Avalanche characteristics

14 Typ. gate charge

I AS=f(t AV); R GS=25 Ω

V GS=f(Q gate); I D=25 A pulsed

parameter: T j(start)

parameter: V DD

100

12

15 V

10

6V
24 V

25 °C
100 °C

8

V GS [V]

I AV [A]

125 °C

10

6

4

2

1

0
1

10

100

1000

0

5

10

15

20

25

Q gate [nC]

t AV [µs]

15 Drain-source breakdown voltage

16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

28

V GS
Qg

V BR(DSS) [V]

26

24

V g s(th)

22

Q g(th)

Q sw
Q gs

20
-60

-10

40

90

140

Q g ate

Q gd

190

T j [°C]

Rev. 1.1

page 7

2008-04-25

BSC085N025S G
Package Outline

PG-TDSON-8

P-TDSON-8: Outline

Rev. 1.1

page 8

2008-04-25

BSC085N025S G
Package Outline
P-TDSON-8: Tape

Dimensions in mm
Rev. 1.1

page 9

2008-04-25

BSC085N025S G

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev. 1.1

page 10

2008-04-25

www.s-manuals.com

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