BSC085N025S G Datasheet. Www.s Manuals.com. Bsc085n025sg Infineon

User Manual: Marking of electronic components, SMD Codes 85, 8510, 853**, 8550, 85A, 85N025S. Datasheets BSC085N025S G, CHL8510CRT, MMBD1701, MMBD1701A, PXT8550, SP6853S26RG, ST8835, UDZS22B.

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BSC085N025S G

OptiMOS®2 Power-Transistor

Features

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC converters

• Qualified according to JEDEC1 for target applications

• Logic level / N-channel

• Excellent gate charge x RDS(on) product (FOM)

• Very low on-resistance RDS(on)

• Superior thermal resistance

• Avalanche rated

• dv/dt rated

• Pb-free lead plating; RoHS compliant

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current IDTC=25 °C 35 A

TC=100 °C 35

TA=25 °C,

RthJA=45 K/W2) 14

Pulsed drain current ID,pulse TC=25 °C3) 140

Avalanche energy, single pulse EAS ID=35 A, RGS=25 Ω120 mJ

Reverse diode dv/dtdv/dt

ID=35 A, VDS=24 V,

di/dt=200 A/µs,

Tj,max=150 °C

6 kV/µs

Gate source voltage VGS ±20 V

Power dissipation Ptot TC=25 °C 52 W

TA=25 °C,

RthJA=45 K/W2) 2.8

Operating and storage temperature Tj, Tstg -55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Value

VDS 25 V

RDS(on),max 8.5 mΩ

ID35 A

Product Summary

PG-TDSON-8

Type Package Marking

BSC085N025S G PG-TDSON-8 85N025S

Rev. 1.1 page 1 2008-04-25

BSC085N025S G

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case RthJC - - 2.4 K/W

Thermal resistance, RthJA minimal footprint - - 62

junction - ambient 6 cm2 cooling area2) --45

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 25 - - V

Gate threshold voltage VGS(th) VDS=VGS, ID=25 µA 1.2 1.6 2

Zero gate voltage drain current IDSS

VDS=25 V, VGS=0 V,

Tj=25 °C - 0.1 1 µA

VDS=25 V, VGS=0 V,

Tj=125 °C - 10 100

Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 10 100 nA

Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=25 A - 10.5 13.1 mΩ

VGS=10 V, ID=35 A - 7.1 8.5

Gate resistance RG- 1.2 - Ω

Transconductance gfs

|VDS|>2|ID|RDS(on)max,

ID=35 A 25 50 - S

3) See figure 3

1)J-STD20 and JESD22

Values

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 1.1 page 2 2008-04-25

BSC085N025S G

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance Ciss - 1350 1800 pF

Output capacitance Coss - 518 689

Reverse transfer capacitance Crss -6699

Turn-on delay time td(on) - 4.7 7 ns

Rise time tr-46

Turn-off delay time td(off) -1827

Fall time tf-35

Gate Char

g

e Characteristics4)

Gate to source charge Qgs - 4.6 6.2 nC

Gate charge at threshold Qg(th) - 2.2 2.9

Gate to drain charge Qgd - 3.2 4.8

Switching charge Qsw - 5.7 8.1

Gate charge total Qg-1114

Gate plateau voltage Vplateau - 3.4 - V

Gate charge total, sync. FET Qg(sync)

VDS=0.1 V,

VGS=0 to 5 V -1013nC

Output charge Qoss VDD=15 V, VGS=0 V -1115

Reverse Diode

Diode continous forward current IS- - 35 A

Diode pulse current IS,pulse - - 140

Diode forward voltage VSD

VGS=0 V, IF=35 A,

Tj=25 °C - 0.93 1.1 V

Reverse recovery charge Qrr

VR=15 V, IF=IS,

diF/dt=400 A/µs - - 10 nC

4) See figure 16 for gate charge parameter definition

TC=25 °C

Values

VGS=0 V, VDS=15 V,

f=1 MHz

VDD=15 V, VGS=10 V,

ID=25 A, RG=2.7 Ω

VDD=15 V, ID=25 A,

VGS=0 to 5 V

Rev. 1.1 page 3 2008-04-25

BSC085N025S G

1 Power dissipation 2 Drain current

Ptot=f(TC)ID=f(TC); VGS≥10 V

3 Safe operating area 4 Max. transient thermal impedance

ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)

parameter: tpparameter: D=tp/T

10 µs

100 µs

1 ms

DC

103

102

101

100

102

101

100

10-1

VDS [V]

ID [A]

limited by on-state

resistance 1 µs

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

100

10-1

10-2

10-3

10-4

10-5

101

100

10-1

10-2

tp [s]

ZthJC [K/W]

0

10

20

30

40

50

60

0 40 80 120 160

TC [°C]

Ptot [W]

0

10

20

30

40

0 40 80 120 160

TC [°C]

ID [A]

Rev. 1.1 page 4 2008-04-25

BSC085N025S G

5 Typ. output characteristics 6 Typ. drain-source on resistance

ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C

parameter: VGS parameter: VGS

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C

parameter: Tj

3 V

3.2 V

3.4 V 3.7 V 4 V

4.5 V

10 V

0

5

10

15

20

25

30

0 20406080

ID [A]

RDS(on) [mΩ]

25 °C

150 °C

0

10

20

30

40

50

60

70

012345

VGS [V]

ID [A]

0

10

20

30

40

50

60

70

0 20406080

ID [A]

gfs [S]

2.8 V

3 V

3.2 V

3.4 V

3.7 V

4 V

4.5 V

10 V

0

10

20

30

40

50

60

70

0123

VDS [V]

ID [A]

Rev. 1.1 page 5 2008-04-25

BSC085N025S G

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

RDS(on)=f(Tj); ID=35 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS

parameter: ID

11 Typ. capacitances 12 Forward characteristics of reverse diode

C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)

parameter: Tj

typ

98 %

0

3

6

9

12

15

-60 -10 40 90 140 190

Tj [°C]

RDS(on) [mΩ]

25 µA

250 µA

0

0.4

0.8

1.2

1.6

2

2.4

-60 -10 40 90 140 190

Tj [°C]

VGS(th) [V]

Ciss

Coss

Crss

104

103

102

10

100

1000

10000

0102030

VDS [V]

C [pF]

25 °C

150 °C

25 °C, 98%

150 °C, 98%

103

102

101

100

0 0.5 1 1.5 2

VSD [V]

IF [A]

Rev. 1.1 page 6 2008-04-25

BSC085N025S G

13 Avalanche characteristics 14 Typ. gate charge

IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=25 A pulsed

parameter: Tj(start) parameter: VDD

15 Drain-source breakdown voltage 16 Gate charge waveforms

VBR(DSS)=f(Tj); ID=1 mA

6 V

15 V

24 V

0

2

4

6

8

10

12

0 5 10 15 20 25

Qgate [nC]

VGS [V]

20

22

24

26

28

-60 -10 40 90 140 190

Tj [°C]

VBR(DSS) [V]

V

GS

Q

gate

V

gs(th)

Q

g(th)

Q

gs

Q

gd

Q

sw

Q

g

25 °C

100 °C

125 °C

1

10

100

1 10 100 1000

tAV [µs]

IAV [A]

Rev. 1.1 page 7 2008-04-25

BSC085N025S G

Package Outline PG-TDSON-8

P-TDSON-8: Outline

Rev. 1.1 page 8 2008-04-25

BSC085N025S G

Package Outline

P-TDSON-8: Tape

Dimensions in mm

Rev. 1.1 page 9 2008-04-25

BSC085N025S G

Published by

Infineon Technologies AG

81726 Munich, Germany

© 2008 Infineon Technologies AG

All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev. 1.1 page 10 2008-04-25

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