BSS138 Datasheet. Www.s Manuals.com. Fairchild

User Manual: Marking of electronic components, SMD Codes SS, SS12, SS14, sSG, sSN. Datasheets 2SC2405, 2SC3929, BSS138, BZX84J-B39, RP130K501A, SN7002, SN7002N, SN7002W, SS12T3 , SS14T3 .

Open the PDF directly: View PDF .
Page Count: 6

Download
Open PDF In Browser	View PDF

BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description

Features

These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.

• 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V
RDS(ON) = 6.0Ω @ VGS = 4.5 V
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount
package

D

D

S
S

G

SOT-23

G

Absolute Maximum Ratings
Symbol

TA=25oC unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

ID

Drain Current

PD

Maximum Power Dissipation

– Continuous

(Note 1)

– Pulsed

Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds

TL

Units

50

V

±20

V

0.22

A

0.88
(Note 1)

Derate Above 25°C
TJ, TSTG

Ratings

0.36
2.8

W
mW/°C

−55 to +150

°C

300

°C

350

°C/W

Thermal Characteristics
Thermal Resistance, Junction-to-Ambient

RθJA

(Note 1)

Package Marking and Ordering Information
Device Marking

Device

Reel Size

Tape width

Quantity

SS

BSS138

7’’

8mm

3000 units

2005 Fairchild Semiconductor Corporation

BSS138 Rev C(W)

BSS138

October 2005

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max

Units

Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current

ID = 250 µA
VGS = 0 V,
ID = 250 µA,Referenced to 25°C
VDS = 50 V,

50

V
72

VGS = 0 V

VDS = 50 V, VGS = 0 V TJ = 125°C
IGSS

Gate–Body Leakage.

On Characteristics

mV/°C
0.5

µA

5

µA

VDS = 30 V,

VGS = 0 V

100

nA

VGS = ±20 V,

VDS = 0 V

±100

nA

(Note 2)

VGS(th)
∆VGS(th)
∆TJ
RDS(on)

Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance

ID(on)
gFS

VDS = VGS,

ID = 1 mA

0.8

ID = 1 mA,Referenced to 25°C

On–State Drain Current

ID = 0.22 A
VGS = 10 V,
ID = 0.22 A
VGS = 4.5 V,
VGS = 10 V, ID = 0.22 A, TJ = 125°C
VGS = 10 V,
VDS = 5 V

0.2

Forward Transconductance

VDS = 10V,

ID = 0.22 A

0.12

VDS = 25 V,
f = 1.0 MHz

V GS = 0 V,

1.3
–2

1.5

0.7
1.0
1.1

3.5
6.0
5.8

V
mV/°C
Ω

A
0.5

S

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

Switching Characteristics
td(on)

Turn–On Delay Time

tr

Turn–On Rise Time

td(off)

Turn–Off Delay Time

tf

Turn–Off Fall Time

Qg

Total Gate Charge

Qgs

Gate–Source Charge

Qgd

Gate–Drain Charge

VGS = 15 mV, f = 1.0 MHz

27

pF

13

pF

6

pF

9

Ω

(Note 2)

VDD = 30 V,
VGS = 10 V,

VDS = 25 V,
VGS = 10 V

ID = 0.29 A,
RGEN = 6 Ω

ID = 0.22 A,

2.5

5

9

18

ns
ns

20

36

ns

7

14

ns

1.7

2.4

nC

0.1

nC

0.4

nC

Drain–Source Diode Characteristics and Maximum Ratings
IS

Maximum Continuous Drain–Source Diode Forward Current

VSD

Drain–Source Diode Forward
Voltage

VGS = 0 V,

IS = 0.44 A(Note 2)

0.8

0.22

A

1.4

V

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 350°C/W when mounted on a
minimum pad..

Scale 1 : 1 on letter size paper
2.

Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

BSS138 Rev C(W)

BSS138

Electrical Characteristics

BSS138

Typical Characteristics

1

VGS = 10V

3.4

6.0V

4.5V

ID, DRAIN CURRENT (A)

0.8

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

3.5V
3.0V

0.6

2.5V
0.4

0.2

2.0V

3

VGS = 2.5V
2.6
2.2

3.0V
1.8

3.5V
4.0V
4.5V

1.4

6.0V
10V

1
0.6

0
0

0.5

1

1.5

2

2.5

0

3

0.2

Figure 1. On-Region Characteristics.

0.8

1

4.1
ID = 220mA
VGS = 10V

1.8

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

0.6

Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.

2

1.6
1.4
1.2
1
0.8

ID = 110mA
3.5
2.9
TA = 125oC
2.3
1.7
TA = 25oC
1.1
0.5

0.6
-50

-25

0

25

50

75

100

125

150

0

2

o

4

6

8

10

VGS, GATE TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE ( C)

Figure 3. On-Resistance Variation with
Temperature.

Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1

0.6
o

o

TA = -55 C

0.5

IS, REVERSE DRAIN CURRENT (A)

VGS = 0V

VDS = 10V
ID, DRAIN CURRENT (A)

0.4

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

25 C
125oC

0.4
0.3
0.2
0.1
0

0.1
TA = 125oC
25oC
0.01
-55oC
0.001

0.0001
0.5

1

1.5

2

2.5

3

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

3.5

0

0.2

0.4

0.6

0.8

1

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.

BSS138 Rev C(W)

BSS138

Typical Characteristics

100

ID = 220mA

VDS = 8V

f = 1 MHz
VGS = 0 V

25V
80

8
30V

CAPACITANCE (pF)

VGS, GATE-SOURCE VOLTAGE (V)

10

6

4

60

CISS
40

COSS

2

20

0

0

CRSS
0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0

1.8

10

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

40

50

P(pk), PEAK TRANSIENT POWER (W)

5

100µs

1

1ms
10ms
100ms
1s

RDS(ON) LIMIT
0.1

DC
VGS = 10V
SINGLE PULSE
RθJA = 350oC/W

0.01

TA = 25oC
0.001
0.1

1

10

100

SINGLE PULSE
RθJA = 350°C/W
TA = 25°C

4

3

2

1

0
0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE

30

Figure 8. Capacitance Characteristics.

10

ID, DRAIN CURRENT (A)

20

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 10. Single Pulse Maximum
Power Dissipation.

1
D = 0.5

RθJA(t) = r(t) * RθJA
o

0.2

0.1

RθJA = 350 C/W

0.1
0.05

P(pk)

0.02
0.01

t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2

0.01
SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.

BSS138 Rev C(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
FAST®
ActiveArray™
FASTr™
Bottomless™
FPS™
Build it Now™
FRFET™
CoolFET™
GlobalOptoisolator™
CROSSVOLT™ GTO™
DOME™
HiSeC™
EcoSPARK™
I2C™
E2CMOS™
i-Lo™
EnSigna™
ImpliedDisconnect™
FACT™
IntelliMAX™
FACT Quiet Series™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™

ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™

PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3

SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
UniFET™
VCX™
Wire™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17

www.s-manuals.com



---

Source Exif Data:

File Type                       : PDF
File Type Extension             : pdf
MIME Type                       : application/pdf
PDF Version                     : 1.6
Linearized                      : No
XMP Toolkit                     : Adobe XMP Core 4.0-c316 44.253921, Sun Oct 01 2006 17:14:39
Producer                        : Acrobat Distiller 4.05 for Windows
Create Date                     : 2002:09:17 16:36:04Z
Modify Date                     : 2014:03:19 23:08:48+02:00
Metadata Date                   : 2014:03:19 23:08:48+02:00
Document ID                     : uuid:add24b54-3200-488d-9069-1bc38940799f
Instance ID                     : uuid:97b2e209-5dd4-4cea-bdc4-e1675d85015a
Format                          : application/pdf
Title                           : BSS138 - Datasheet. www.s-manuals.com.
Creator                         : 
Subject                         : BSS138 - Datasheet. www.s-manuals.com.
Has XFA                         : No
Page Count                      : 6
Keywords                        : BSS138, -, Datasheet., www.s-manuals.com.
Warning                         : [Minor] Ignored duplicate Info dictionary

EXIF Metadata provided by EXIF.tools