BSS138 Datasheet. Www.s Manuals.com. Fairchild

User Manual: Marking of electronic components, SMD Codes SS, SS12, SS14, sSG, sSN. Datasheets 2SC2405, 2SC3929, BSS138, BZX84J-B39, RP130K501A, SN7002, SN7002N, SN7002W, SS12T3 , SS14T3 .

Open the PDF directly: View PDF .
Page Count: 6

October 2005

2005 Fairchild Semiconductor Corporation BSS138 Rev C(W)

BSS138

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field effect

transistors are produced using Fairchild’s proprietary,

high cell density, DMOS technology. These products

have been designed to minimize on-state resistance

while provide rugged, reliable, and fast switching

performance.These products are particularly suited for

low voltage, low current applications such as small

servo motor control, power MOSFET gate drivers, and

other switching applications.

Features

• 0.22 A, 50 V. R

DS(ON)

= 3.5Ω @ V

GS

= 10 V

R

DS(ON)

= 6.0Ω @ V

GS

= 4.5 V

• High density cell design for extremely low R

DS(ON)

• Rugged and Reliable

• Compact industry standard SOT-23 surface mount

package

G

D

S

SOT-23

D

S

G

Absolute Maximum Ratings T

A

=25

o

C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

Drain-Source Voltage 50 V

V

GSS

Gate-Source Voltage ±20 V

I

D

Drain Current – Continuous (Note 1) 0.22 A

– Pulsed 0.88

Maximum Power Dissipation (Note 1) 0.36 W

P

D

Derate Above 25°C 2.8 mW/°C

T

J

, T

STG

Operating and Storage Junction Temperature Range −55 to +150 °C

T

L

Maximum Lead Temperature for Soldering

Purposes, 1/16” from Case for 10 Seconds 300 °C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient (Note 1) 350 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

SS BSS138 7’’ 8mm 3000 units

BSS138

BSS138 Rev C(W)

Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain–Source Breakdown Voltage V

GS

= 0 V, I

D

= 250 µA 50 V

∆BV

DSS

∆T

J

Breakdown Voltage Temperature

Coefficient I

D

= 250 µA,Referenced to 25°C

72

mV/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= 50 V, V

GS

= 0 V 0.5 µA

V

DS

= 50 V, V

GS

= 0 V T

J

= 125°C 5

µA

V

DS

= 30 V, V

GS

= 0 V 100 nA

I

GSS

Gate–Body Leakage. V

GS

= ±20 V, V

DS

= 0 V

±100 nA

On Characteristics

(Note 2)

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS

, I

D

= 1 mA 0.8 1.3 1.5V

∆V

GS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient I

D

= 1 mA,Referenced to 25°C

–2

mV/°C

R

DS(on)

Static Drain–Source

On–Resistance V

GS

= 10 V, I

D

= 0.22 A

V

GS

= 4.5 V, I

D

= 0.22 A

V

GS

= 10 V, I

D

= 0.22 A, T

J

= 125°C

0.7

1.0

1.1

3.5

6.0

5.8

Ω

I

D(on)

On–State Drain Current V

GS

= 10 V, V

DS

= 5 V 0.2 A

g

FS

Forward Transconductance V

DS

= 10V, I

D

= 0.22 A 0.12 0.5 S

Dynamic Characteristics

C

iss

Input Capacitance 27 pF

C

oss

Output Capacitance 13 pF

C

rss

Reverse Transfer Capacitance

V

DS

= 25 V, V

GS

= 0 V,

f = 1.0 MHz

6 pF

R

G

Gate Resistance V

GS

= 15 mV, f = 1.0 MHz 9 Ω

Switching Characteristics

(Note 2)

t

d(on)

Turn–On Delay Time 2.5 5 ns

t

r

Turn–On Rise Time 9 18 ns

t

d(off)

Turn–Off Delay Time 20 36 ns

t

f

Turn–Off Fall Time

V

DD

= 30 V, I

D

= 0.29 A,

V

GS

= 10 V, R

GEN

= 6 Ω

7 14 ns

Q

g

Total Gate Charge 1.7 2.4 nC

Q

gs

Gate–Source Charge 0.1 nC

Q

gd

Gate–Drain Charge

V

DS

= 25 V, I

D

= 0.22 A,

V

GS

= 10 V

0.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain–Source Diode Forward Current 0.22 A

V

SD

Drain–Source Diode Forward

Voltage V

GS

= 0 V, I

S

= 0.44 A(Note 2) 0.8 1.4 V

Notes:

1. R

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R

θJC

is guaranteed by design while R

θCA

is determined by the user's board design.

a) 350°C/W when mounted on a

minimum pad..

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

BSS138

BSS138 Rev C(W)

Typical Characteristics

0

0.2

0.4

0.6

0.8

1

00.511.522.53

V

DS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

V

GS

= 10V

2.0V

3.0V

2.5V

6.0V 4.5V 3.5V

0.6

1

1.4

1.8

2.2

2.6

3

3.4

0 0.2 0.4 0.6 0.8 1

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= 2.5V

4.5V

3.0V

4.0V

3.5V

6.0V

10V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= 220mA

V

GS

= 10V

0.5

1.1

1.7

2.3

2.9

3.5

4.1

0246810

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= 110mA

T

A

= 125

o

C

T

A

= 25

o

C

Figure 3. On-Resistance Variation with

Temperature. Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

0.1

0.2

0.3

0.4

0.5

0.6

0.511.522.533.5

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

T

A

= -55

o

C25

o

C

125

o

C

V

DS

= 10V

0.0001

0.001

0.01

0.1

1

0 0.2 0.4 0.6 0.8 1 1.2

V

SD

,

BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A)

V

GS

= 0V

T

A

= 125

o

C

25

o

C

-55

o

C

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

BSS138

BSS138 Rev C(W)

Typical Characteristics

0

2

4

6

8

10

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

Q

g

, GATE CHARGE (nC)

V

GS

, GATE-SOURCE VOLTAGE (V)

I

D

= 220mA V

DS

= 8V 25V

30V

0

20

40

60

80

100

0 1020304050

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

C

ISS

C

OSS

C

RSS

f = 1 MHz

V

GS

= 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.001

0.01

0.1

1

10

0.1 1 10 100

V

DS

, DRAIN-SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

DC

1s

100ms

100

µ

s

R

DS(ON)

LIMIT

V

GS

= 10V

SINGLE PULSE

R

θJA

= 350

o

C/W

T

A

= 25

o

C

10ms

1ms

0

1

2

3

4

5

0.001 0.01 0.1 1 10 100 1000

t

1

, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

R

θJA

= 350°C/W

T

A

= 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t

1

, TIME (sec)

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

R

θJA

(t) = r(t) * R

θJA

R

θJA

= 350

o

C/W

T

J

- T

A

= P * R

θJA

(t)

Duty Cycle, D = t

1

/ t

2

P(pk)

t

1

t

2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1a.

Transient thermal response will change depending on the circuit board design.

BSS138

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerEdge™

FAST®

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

I2C™

i-Lo™

ImpliedDisconnect™

IntelliMAX™

Rev. I17

ACEx™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

FACT™

FACT Quiet Series™

PowerSaver™

PowerTrench®

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

μSerDes™

ScalarPump™

SILENT SWITCHER®

SMART START™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic®

TINYOPTO™

TruTranslation™

UHC™

UltraFET®

UniFET™

VCX™

Wire™

Across the board. Around the world.™

The Power Franchise®

Programmable Active Droop™

www.s-manuals.com