BSS84 Datasheet. Www.s Manuals.com. Diodes

User Manual: Marking of electronic components, SMD Codes C8, C8*, C8***, C8-**, C8-***, C84, C8=**, C8=***, C8A, C8B, C8C, C8D, C8E, C8F, C8G, C8H, C8J, C8K, C8L, C8M, C8N, C8P, C8Q, C8R, C8S, C8T, C8U, C8V, C8W, C8X, C8Y, C8Z. Datasheets BSS84, BZX585-B4V7, CMPZ5226B, CMPZ5227B, CMPZ5228B, CMPZ5229B, CMPZ5230B, CMPZ5231B, CMPZ5232B, CMPZ5233B, CMPZ5234B, CMPZ5235B, CMPZ5236B, CMPZ5237B, CMPZ5238B, CMPZ5239B, CMPZ5240B, CMPZ5241B, CMPZ5242B, CMPZ5243B, CMPZ5244B, CMPZ5245B, CMPZ5246B, CMPZ5247B, CMPZ5248B, CMPZ5249B, RT

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BSS84

Document number: DS30149 Rev. 18 - 2

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BSS84

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS RDS(on) max ID

TA = +25°C

-50V 10 @ VGS = -5V -130mA

Description

This MOSFET has been designed to minimize the on-state resistance

(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

 General Purpose Interfacing Switch

 Power Management Functions

 Analog Switch

Features and Benefits

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish (Lead Free Plating) Solderable per

MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number Qualification Case Packaging

BSS84-7-F Commercial SOT23 3000/Tape & Reel

BSS84Q-7-F Automotive SOT23 3000/Tape & Reel

BSS84-13-F Commercial SOT23 10000/Tape & Reel

BSS84Q-13-F Automotive SOT23 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017

Code J K L M N P R … Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT23

Top View Equivalent Circuit To

p

View

D

GS

K = SAT (Shanghai Assembly / Test site)

C = CAT (Chengdu Assembly / Test site)

84 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: N = 2002)

M = Month (ex: 9 = September)

Source

Gate

Drain

C84

YM

K84

YM

e3

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Document number: DS30149 Rev. 18 - 2

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Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage VDSS -50 V

Drain-Gate Voltage RGS  20K V

DGR -50 V

Gate-Source Voltage Continuous VGSS 20 V

Drain Current (Note 5) Continuous ID -130 mA

Pulsed Drain Current IDM -1.2 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 5) PD 300 mW

Thermal Resistance, Junction to Ambient R



JA 417 C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS -50   V VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current IDSS













-1

-2

-100

µA

µA

nA

VDS = -50V, VGS = 0V, TJ = +25°C

VDS = -50V, VGS = 0V, TJ = +125°C

VDS = -25V, VGS = 0V, TJ = +25°C

Gate-Body Leakage IGSS   10 nA VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

th

)

-0.8  -2.0 V

VDS = VGS, ID = -1mA

Static Drain-Source On-Resistance RDS

(

ON

)

  10  VGS = -5V, ID = -0.100A

Forward Transconductance gFS 0.05   S VDS = -25V, ID = -0.1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance Ciss   45 pF

VDS = -25V, VGS = 0V, f = 1.0MHz

Output Capacitance Coss   25 pF

Reverse Transfer Capacitance Crss   12 pF

SWITCHING CHARACTERISTICS (Note 7)

Turn-On Delay Time tD

(

ON

)

 10  ns VDD = -30V, ID = -0.27A,

RGEN = 50, VGS = -10V Turn-Off Delay Time tD

(

OFF

)

 18  ns

Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing

BSS84

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0

50

100

25 50 75 100 125 150 175 200

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N (mW)

D

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Max Power Dissipation vs. Ambient Temperature

A

150

200

250

300

350

0

400

0

-600

-500

-400

-300

-200

-100

0-2-1 -5-4-3

I, D

R

AIN-S

O

U

R

C

E

C

U

R

R

EN

T

(mA)

D

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 2 Drain-Source Current vs. Drain-Source Voltage

DS

0.0

-1.0

-0.8

-0.6

-0.4

-0.2

0-2-3-4-1 -8-7

-6-5

I, D

R

AI

N

-

C

U

R

R

E

N

T

(A)

D

V , GATE-SOURCE VOLTAGE (V)

Fig. 3 Drain-Current vs. Gate-Source Voltage

GS

0

1

2

4

5

3

6

8

7

10

9

0-1 -2 -3 -4 -5

V , GATE-SOURCE (V)

Fig. 4 On-Resistance vs. Gate-Source Voltage

GS

T= 25C

A

°

T = 125 C

A

°

R , NORMALIZED DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



0

3

6

9

12

15

-50 -25 0 25 50 12510075 150

T , JUNCTION TEMPERATURE (°C)

Fig. 5 On-Resistance vs. Junction Temperature

J

V = -10V

I = -0.13A

GS

D

R , ON-RESISTANCE ( )

DS(ON)



0.0

5.0

10.0

0.0 -0.2 -0.4 -0.6 -0.8 -1.0

I , DRAIN-CURRENT (A)

Fig. 6 On-Resistance vs. Drain-Current

D

15.0

20.0

25.0

R , ON-RESISTANCE ( )

DS(ON)



BSS84

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BSS84

Package Outline Dimensions

Suggested Pad Layout

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

XE

Y

C

Z

A

M

JL

D

F

BC

H

K

G

K1

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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final and determinative format released by Diodes Incorporated.

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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1. are intended to implant into the body, or

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