DMG2302U Datasheet. Www.s Manuals.com. Diodes

User Manual: Marking of electronic components, SMD Codes G2, G2**, G2-, G2-***, G21, G23, G28, G2=**, G2=***. Datasheets BF599, BGA2711, DMG2302U, DTD113ZK, DTD113ZU, EMG2, EUP7965-25VIR1, FMG2A, MIC5219-2.8BML, QN7002, RT9166-12GVL, RT9166-12PVL, RT9715CGQW, TC1188-SECT, UMG2N.

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DMG2302U
N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data












Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability






Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish  Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)

Drain

D
Gate

Internal Schematic

TOP VIEW

Ordering Information

TOP VIEW

(Note 4)

Part Number
DMG2302U-7
Notes:

S

G

Source

Case
SOT-23

Packaging
3000/Tape & Reel

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

G23 = Product Type Marking Code

Date Code Key
Year
Code
Month
Code

2009
W
Jan
1

2010
X
Feb
2

DMG2302U
Document number: DS31838 Rev. 3 - 2

Mar
3

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)

YM

G23

2011
Y
Apr
4

May
5

2012
Z
Jun
6

1 of 6
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2013
A
Jul
7

Aug
8

2014
B
Sep
9

Oct
O

2015
C
Nov
N

Dec
D

September 2013
© Diodes Incorporated

DMG2302U
Maximum Ratings

@TA = +25°C unless otherwise specified
Characteristic

Symbol
VDSS
VGSS

Drain-Source Voltage
Gate-Source Voltage
Steady
State

Continuous Drain Current (Note 5)

TA = +25°C
TA = +70°C

ID

Pulsed Drain Current (Note 6)

IDM

Value
20
±8
4.2
3.4
27

Units
V
V

Value
0.8
0.5
156
-55 to +150

Unit

A
A

Thermal Characteristics
Characteristic

Symbol
TA = +25°C
TA = +70°C

Power Dissipation (Note 5)

PD

Thermal Resistance, Junction to Ambient @TA = +25°C
Operating and Storage Temperature Range
Notes:

°C/W
°C

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.

Electrical Characteristics

@TA = +25°C unless otherwise specified

Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:

RθJA
TJ, TSTG

W

Symbol

Min

Typ

Max

Unit

Test Condition

BVDSS
IDSS
IGSS

20
–
–

–
–
–

–
1.0
±100

V
A
nA

VGS = 0V, ID = 10μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V

VGS(th)

0.4

–

1.0

V
mΩ

VDS = VGS, ID = 50μA
VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
VDS = 5V, ID = 3.6A
VGS = 0V, IS = 1A

RDS (ON)

–

–

90
120

|Yfs|
VSD

–
–

13
0.75

–
1.0

S
V

Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf

–
–
–
–
–
–
–
–
–
–
–

594.3
64.5
57.7
1.5
7.0
0.9
1.4
7.4
9.8
28.1
6.7

–
–
–
–
–
–
–
–
–
–
–

pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns

VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V,
ID = 3.6A
VDD = 10V, VGS = 4.5V,
RL = 2.78Ω, RG = 1.0Ω

7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.

DMG2302U
Document number: DS31838 Rev. 3 - 2

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September 2013
© Diodes Incorporated

DMG2302U
10

VGS = 8.0V

10
VGS = 4.5V
VGS = 3.0V

VDS = 5V

8

VGS = 2.5V

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

8

VGS = 2.0V
VGS = 1.5V

6

4

2

6

4
TA = 150°C
TA = 125°C

2

TA = 85°C

VGS = 1.2V

0

0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics

0

3

0.06
0.055
0.05
0.045
0.04
VGS = 1.8V

0.035
0.03

VGS = 2.5V

0.025

VGS = 4.5V

0.02
0.1

1
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage

10

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)

1.8
1.6

1.4
VGS = 2.5V
ID = 5A

1.2

VGS = 4.5V
ID = 10A

1.0

0.8
0.6
-50

-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature

DMG2302U
Document number: DS31838 Rev. 3 - 2

TA = -55°C

0

0.5
1
1.5
VGS, GATE SOURCE VOLTAGE (V)

2

Fig. 2 Typical Transfer Characteristics

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

0

TA = 25°C

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0.06
0.055

VGS = 4.5V

0.05
0.045
TA = 150°C

0.04

T A = 125°C

0.035

TA = 85°C

0.03
T A = 25°C

0.025
0.02

T A = -55°C

0.015
0.01

0

2

4
6
8
10
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature

0.06
0.05
VGS = 2.5V
ID = 5A

0.04

0.03

VGS = 4.5V
ID = 10A

0.02

0.01
0
-50

-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature

September 2013
© Diodes Incorporated

DMG2302U
10

1.2
IS, SOURCE CURRENT (A)

VGS(TH), GATE THRESHOLD VOLTAGE (V)

1.4

1.0
0.8

ID = 1mA

0.6

ID = 250µA

0.4

6

T A = 25°C

4

2

0.2
0

0
-50

-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature

0

IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)

1,000
Ciss

C, CAPACITANCE (pF)

8

100
Coss
Crss

f = 1MHz

10

0

4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance

0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current

1.2

10,000
TA = 150°C

1,000
TA = 125°C

100

10

T A = 85°C

1

T A = 25°C
T A = -55°C

0.1
0

20

2

4
6
8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage

r(t), TRANSIENT THERMAL RESISTANCE

1
D = 0.7
D = 0.5
D = 0.3

0.1

D = 0.1
D = 0.9

D = 0.05

RJA(t) = r(t) * RJA
RJA = 157°C/W

D = 0.02

0.01

D = 0.01
P(pk)

D = Single Pulse

0.001
0.00001

0.0001

t1

t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 /t2

D = 0.005

0.001

0.01
0.1
1
t1, PULSE DURATION TIME (s)

10

100

1,000

Fig. 11 Transient Thermal Response

DMG2302U
Document number: DS31838 Rev. 3 - 2

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DMG2302U
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
°
7
l
l
A

H
E
N
A
L
5
P2
E.
G0
U
A
G

J

K

1
K

a

M

A

1
L

L

B

C

D
G

F

SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
8°

All Dimensions in mm

Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y
Z

C

X

DMG2302U
Document number: DS31838 Rev. 3 - 2

Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35

E

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© Diodes Incorporated

DMG2302U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com

DMG2302U
Document number: DS31838 Rev. 3 - 2

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