DMG2302U Datasheet. Www.s Manuals.com. Diodes

User Manual: Marking of electronic components, SMD Codes G2, G2**, G2-, G2-***, G21, G23, G28, G2=**, G2=***. Datasheets BF599, BGA2711, DMG2302U, DTD113ZK, DTD113ZU, EMG2, EUP7965-25VIR1, FMG2A, MIC5219-2.8BML, QN7002, RT9166-12GVL, RT9166-12PVL, RT9715CGQW, TC1188-SECT, UMG2N.

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DMG2302U

Document number: DS31838 Rev. 3 - 2

1 of 6

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September 2013

DMG2302U

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT-23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below

 Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMG2302U-7 SOT-23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

TOP VIEW Internal Schematic TOP VIEW

Source

Gate

Drain

G23 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

G23

DMG2302U

Document number: DS31838 Rev. 3 - 2

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DMG2302U

Maximum Ratings @TA = +25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 20 V

Gate-Source Voltage VGSS ±8 V

Continuous Drain Current (Note 5) Steady

State

TA = +25°C

TA = +70°C ID 4.2

3.4 A

Pulsed Drain Current (Note 6) IDM 27 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5) TA = +25°C

TA = +70°C PD 0.8

0.5 W

Thermal Resistance, Junction to Ambient @TA = +25°C RJA 156 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

Electrical Characteristics @TA = +25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage BVDSS 20 – – V VGS = 0V, ID = 10A

Zero Gate Voltage Drain Current TJ = +25°C IDSS – – 1.0

A VDS = 20V, VGS = 0V

Gate-Source Leakage IGSS – – ±100 nA VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage VGS

(

)

0.4 – 1.0 V VDS = VGS, ID = 50A

Static Drain-Source On-Resistance RDS (ON) – –

120 m VGS = 4.5V, ID = 3.6A

VGS = 2.5V, ID = 3.1A

Forward Transfer Admittance |Yfs| – 13 – S VDS = 5V, ID = 3.6A

Diode Forward Voltage VSD – 0.75 1.0 V VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance Ciss – 594.3 – pF

VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss – 64.5 – pF

Reverse Transfer Capacitance Crss – 57.7 – pF

Gate Resistance R

– 1.5 –  VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge Q

– 7.0 – nC

VGS = 4.5V, VDS = 10V,

ID = 3.6A

Gate-Source Charge Q

s – 0.9 – nC

Gate-Drain Charge Q

d – 1.4 – nC

Turn-On Delay Time tD

(

)

– 7.4 – ns

VDD = 10V, VGS = 4.5V,

RL = 2.78, RG = 1.0

Turn-On Rise Time t

– 9.8 – ns

Turn-Off Delay Time tD

(

off

)

– 28.1 – ns

Turn-Off Fall Time tf – 6.7 – ns

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMG2302U

Document number: DS31838 Rev. 3 - 2

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DMG2302U

0 0.5 1 1.5 2 2.5 3

Fig. 1 Typical Output Characteristics

V , DRAIN-SOURCE VOLTAGE (V)

I, D

AIN

(A)

V = 1.2V

V = 1.5V

V = 2.0V

V = 2.5V

V = 3.0V

V = 4.5V

V = 8.0V

0 0.5 1 1.5 2

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

I, D

(A)

V = 5V

T = -55°C

T = 25°C

T = 125°C

T = 150°C

T = 85°C

0.02

0.025

0.03

0.035

0.04

0.045

0.05

0.055

0.06

0.1 1 10

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



V = 1.8V

V = 4.5V

V = 2.5V

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

0.05

0.055

0.06

024 6810

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

, D

-S

ESIS

E ( )

DS(ON)



V = 4.5V

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

, D

AIN-S

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = 4.5V

I = 10A

V = 2.5V

I = 5A

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

0.01

0.02

0.03

0.04

0.06

, D

AIN-S

N-

ESIS

E ( )

DS(ON)



0.05

V = 4.5V

I = 10A

V = 2.5V

I = 5A

DMG2302U

Document number: DS31838 Rev. 3 - 2

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DMG2302U

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

0.2

0.4

0.6

0.8

1.0

1.4

E (V)

GS(TH)

1.2

I = 1mA

I = 250µA

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

I, S

(A)

T = 25°C

100

1,000

048121620

Fig. 9 Typical Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

E (p

)

f = 1MHz

iss

oss

rss

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

0 2 4 6 8 101214161820

V , DRAIN-SOURCE VOLTAGE (V)

0.1

100

1,000

10,000

I, D

AIN-S

E LEAKA

(nA)

DSS

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

Fig. 11 Transient Thermal Response

t , PULSE DURATION TIME (s)

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

0.001

0.01

0.1

r(t),

ANSIEN

MAL

ESIS

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA



R (t) = r(t) *



R = 157°C/W



P(pk) t

D = 0.7

D = 0.5

D = 0.3

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.1

DMG2302U

Document number: DS31838 Rev. 3 - 2

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DMG2302U

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.890 1.00 0.975

K1 0.903 1.10 1.025

L 0.45 0.61 0.55

L1 0.25 0.55 0.40

M 0.085 0.150 0.110

 8°

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

DMG2302U

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DMG2302U

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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