DMG4435SSS Datasheet. Www.s Manuals.com. R5 2 Diodes
User Manual: Marking of electronic components, SMD Codes G4, G4 *, G4**, G4-, G4-***, G43C, G43D, G4435SS, G4=***, G4A, G4B, G4s. Datasheets AZ431AK-BTRG1, AZ431AR-BTRG1, AZ431BK-BTRG1, AZ431BR-BTRG1, BAR63-04, BAR63-04W, BGA2771, DMG4435SSS-13, EMG4, EUP7965-50VIR1, FMG4A, MBT35200MT1, PZU2.7B, RB751S40, RT9166-18GVL, RT9166-18PVL, TC1188-QECT, UMG4N.
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DMG4435SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max -30V 16m @ VGS = -20V 20m @ VGS = -10V Features ID TA = +25°C -7.3A -6.0A NEW PRODUCT Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability performance, making it ideal for high efficiency power management Mechanical Data applications. Applications Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 DC-DC Converters Power management functions Backlighting SO-8 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074 grams (approximate) S D S D S D G D Top View Top View Internal Schematic D G S Equivalent circuit Ordering Information (Note 4) Part Number DMG4435SSS-13 Notes: Case SO-8 Packaging 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 G4435SS G4435SS YY WW YY WW 1 4 Chengdu A/T Site DMG4435SSS Document number: DS32041 Rev. 5 - 2 = Manufacturer’s Marking G4435SS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 1 4 Shanghai A/T Site 1 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4435SSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS -30 V Gate-Source Voltage VGSS ±25 V Steady State TA = +25°C TA = +70°C ID -7.3 -5.7 A t < 10s TA = +25°C TA = +70°C ID -10 -7.5 A IDM -80 A Symbol Value Unit 2.5 W Continuous Drain Current (Note 5) VGS = -20 Pulsed Drain Current (Note 6) NEW PRODUCT Unit Thermal Characteristics Characteristic TA = +25°C Power Dissipation (Note 5) PD TA = +70°C Steady state t < 10s Thermal Resistance, Junction to Ambient @TA = +25°C Operating and Storage Temperature Range 1.5 W RθJA 96.5 55 °C/W °C/W TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -1mA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1.0 µA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±25V, VDS = 0V VGS(th) -1.0 -1.7 -2.5 V VDS = VGS, ID = -250μA 13 16 15 20 21 29 ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) — VGS = -20V, ID = -11A mΩ VGS = -10V, ID = -10A VGS = -5V, ID = -5A Forward Transfer Admittance |Yfs| — 22 — S VDS = -5V, ID = -10A Diode Forward Voltage VSD — -0.74 -1.0 V VGS = 0V, IS = -1A Input Capacitance Ciss — 1614 — pF Output Capacitance Coss — 226 — pF Reverse Transfer Capacitance Crss — 214 — pF Gate Resistance Rg — 6.8 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge at 10V Qg — 35.4 — nC VGS = -10V, VDS = -15V, ID = -10A Total Gate Charge at 5V Qg — 18.9 — nC Gate-Source Charge Qgs — 4.6 — nC Gate-Drain Charge Qgd — 5.7 — nC Turn-On Delay Time tD(on) — 8.6 — ns Turn-On Rise Time tr — 12.7 — ns Turn-Off Delay Time tD(off) — 44.9 — ns tf — 22.8 — ns DYNAMIC CHARACTERISTICS (Note 8) Turn-Off Fall Time Notes: VDS = -15V, VGS = 0V, f = 1.0MHz VGS = -5V, VDS = -15V, ID = -10A VDS = -15V, VGS = -10V, RL = 1.5Ω, RGEN = 3Ω, 5. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper, and the testing is based on the t<10s. The value in any given application depends on the user’s specific board design. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG4435SSS Document number: DS32041 Rev. 5 - 2 2 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4435SSS 30 30 VGS = -10V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -4.5V 20 VGS = -4.0V 15 VGS = -3.5V VGS = -3.0V 10 5 20 15 10 TA = 150°C T A = 125°C 5 TA = 85°C TA = 25°C VGS = -2.2V 0 VGS = -2.5V 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0 2 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0.04 0.03 VGS = -4.5V 0.02 VGS = -10V 0.01 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 TA = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 0.06 0.05 VGS = -4.5V 0.04 T A = 150°C TA = 125°C 0.03 TA = 85°C TA = 25°C 0.02 TA = -55°C 0.01 0 0 5 10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.04 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT VDS = -5V 25 25 1.4 VGS = -4.5V ID = -10A 1.2 VGS = -10V ID = -20A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG4435SSS Document number: DS32041 Rev. 5 - 2 3 of 6 www.diodes.com 0.03 VGS = -4.5V ID = -10A 0.02 VGS = -10V ID = -20A 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature September 2013 © Diodes Incorporated 30 2.5 25 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 3.0 2.0 ID = -1mA 1.5 ID = -250µA 1.0 20 15 T A = 25°C 10 5 0.5 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 10,000 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 f = 1MHz -IDSS, LEAKAGE CURRENT (µA) TA = 150°C Ciss 1,000 Coss Crss 100 10 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 1,000 30 TA = 125°C 100 T A = 85°C 10 TA = 25°C 1 0.1 0 10 20 -VDS, DRAIN-SOURCE VOLTAGE (V) 30 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 10 VGS(TH), GATE-THRESHOLD VOLTAGE (V) NEW PRODUCT DMG4435SSS 9 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate Threshold Voltage vs. Total Gate Charge DMG4435SSS Document number: DS32041 Rev. 5 - 2 4 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4435SSS r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 98°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 D = Single Pulse 0.001 0.00001 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 NEW PRODUCT 1 E1 E A1 L SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4435SSS Document number: DS32041 Rev. 5 - 2 5 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4435SSS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2013, Diodes Incorporated www.diodes.com DMG4435SSS Document number: DS32041 Rev. 5 - 2 6 of 6 www.diodes.com September 2013 © Diodes Incorporated www.s-manuals.com
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