DMG4435SSS Datasheet. Www.s Manuals.com. R5 2 Diodes

User Manual: Marking of electronic components, SMD Codes G4, G4 *, G4**, G4-, G4-***, G43C, G43D, G4435SS, G4=***, G4A, G4B, G4s. Datasheets AZ431AK-BTRG1, AZ431AR-BTRG1, AZ431BK-BTRG1, AZ431BR-BTRG1, BAR63-04, BAR63-04W, BGA2771, DMG4435SSS-13, EMG4, EUP7965-50VIR1, FMG4A, MBT35200MT1, PZU2.7B, RB751S40, RT9166-18GVL, RT9166-18PVL, TC1188-QECT, UMG4N.

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DMG4435SSS

Document number: DS32041 Rev. 5 - 2

1 of 6

www.diodes.com

September 2013

© Diodes Incorporated

DMG4435SSS

NEW PRODUCT

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS R

DS(on) max ID

T

A

= +25°C

-30V 16m @ VGS = -20V -7.3A

20m @ VGS = -10V -6.0A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(ON)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

 DC-DC Converters

 Power management functions

 Backlighting

Features

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMG4435SSS-13 SO-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Top View Top View

Internal Schematic

SO-8 DS

D

D

D

S

S

G

D

S

G

Equivalent circuit

Chengdu A/T Site Shanghai A/T Site

= Manufacturer’s Marking

G4435SS = Product Type Marking Code

YYWW = Date Code Marking

YY or YY = Year (ex: 13 = 2013)

WW = Week (01 - 53)

YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 4

8 5

G4435SS

WW

YY

1 4

8 5

G4435SS

WW

YY

e3

DMG4435SSS

Document number: DS32041 Rev. 5 - 2

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September 2013

© Diodes Incorporated

DMG4435SSS

NEW PRODUCT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS -30 V

Gate-Source Voltage VGSS ±25 V

Continuous Drain Current (Note 5) VGS = -20

Steady State TA = +25°C

TA = +70°C ID -7.3

-5.7 A

t < 10s TA = +25°C

TA = +70°C ID -10

-7.5 A

Pulsed Drain Current (Note 6) IDM -80 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5) TA = +25°C PD

2.5 W

TA = +70°C 1.5 W

Thermal Resistance, Junction to Ambient @TA = +25°C Steady state RθJA

96.5 °C/W

t < 10s 55 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage BVDSS -30 —— V

VGS = 0V, ID = -1mA

Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1.0 µA

VDS = -30V, VGS = 0V

Gate-Source Leakage IGSS — — ±100 nA

VGS = ±25V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage VGS(th) -1.0 -1.7 -2.5 V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance RDS (ON) —

13 16

mΩ

VGS = -20V, ID = -11A

15 20 VGS = -10V, ID = -10A

21 29 VGS = -5V, ID = -5A

Forward Transfer Admittance |Yfs| —22 — S

VDS = -5V, ID = -10A

Diode Forward Voltage VSD —-0.74 -1.0 V

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance Ciss —1614 — pF

VDS = -15V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss —226 —pF

Reverse Transfer Capacitance Crss —214 —pF

Gate Resistance Rg —6.8 —Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge at 10V Qg —35.4 — nC VGS = -10V, VDS = -15V, ID = -10A

Total Gate Charge at 5V Qg —18.9 —nC

VGS = -5V, VDS = -15V,

ID = -10A

Gate-Source Charge Qgs —4.6 —nC

Gate-Drain Charge Qgd —5.7 — nC

Turn-On Delay Time tD(on) —8.6 —ns

VDS = -15V, VGS = -10V,

RL = 1.5Ω, RGEN = 3Ω,

Turn-On Rise Time tr —12.7 —ns

Turn-Off Delay Time tD(off) —44.9 — ns

Turn-Off Fall Time tf —22.8 —ns

Notes: 5. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper, and the testing is based on the t<10s. The value in any given application depends on the

user’s specific board design.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMG4435SSS

Document number: DS32041 Rev. 5 - 2

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September 2013

© Diodes Incorporated

DMG4435SSS

NEW PRODUCT

0

5

10

15

20

25

30

0 0.5 1 1.5 2

Fig. 1 Typical Output Characteristic

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-I , D

R

AIN

C

U

R

R

EN

T

(A)

D

V = -2.5V

GS

V = -2.2V

GS

V = -3.5V

GS

V = -3.0V

GS

V = -4.5V

GS

V = -4.0V

GS

V = -10V

GS

0 0.5 1 1.5 2 2.5 3 3.5 4

Fig. 2 Typical Transfer Characteristic

-V , GATE-SOURCE VOLTAGE (V)

GS

0

5

10

15

20

25

30

-I , D

R

AIN

C

U

R

R

EN

T

(A)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = -5V

DS

0

0.01

0.02

0.03

0.04

0.05

0 5 10 15 20 25 30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

-I , DRAIN-SOURCE CURRENT (A)

D

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)



V = -4.5V

GS

V = -10V

GS

0

0.01

0.02

0.03

0.04

0.05

0.06

0 5 10 15 20 25 30

-I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)



T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = -4.5V

GS

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DSON

V = -10V

I = -20A

GS

D

V = -4.5V

I = -10A

GS

D

0

0.01

0.02

0.03

0.04

R

, D

R

AIN-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DSON

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

V = -10V

I = -20A

GS

D

V = -4.5V

I = -10A

GS

D

DMG4435SSS

Document number: DS32041 Rev. 5 - 2

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© Diodes Incorporated

DMG4435SSS

NEW PRODUCT

0

0.5

1.0

1.5

2.0

2.5

3.0

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

-V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = -1mA

D

I = -250µA

D

0

5

10

15

20

25

30

0 0.2 0.4 0.6 0.8 1.0 1.2

Fig. 8 Diode Forward Voltage vs. Current

-V , SOURCE-DRAIN VOLTAGE (V)

SD

-I , S

O

U

R

C

E

C

U

R

R

EN

T

(A)

S

T = 25°C

A

10

100

1,000

10,000

0 5 10 15 20 25 30

Fig. 9 Typical Total Capacitance

-V , DRAIN-SOURCE VOLTAGE (V)

DS

C

iss

C

rss

C

oss

f = 1MHz

0.1

10

100

1,000

10,000

-I , LEAKA

G

E

C

U

R

R

EN

T

(µA)

DSS

1

0102030

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

-V , DRAIN-SOURCE VOLTAGE (V)

DS

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15 20 25 30 35 40

Q , TOTAL GATE CHARGE (nC)

g

V , GATE-THRESHOLD VOLTAGE (V)

GS(TH)

Fig. 11 Gate Threshold Voltage vs. Total Gate Charge

DMG4435SSS

Document number: DS32041 Rev. 5 - 2

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September 2013

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DMG4435SSS

NEW PRODUCT

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Fig. 12 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.001

0.01

0.1

1

r(t),

T

R

ANSIEN

T

T

H

E

R

MAL

R

ESIS

T

AN

C

E

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

12



R (t) = r(t) *



JA

R

R = 98°C/W





JA

JA

P(pk) t

1

t

2

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SO-8

Dim Min Max

A - 1.75

A1 0.10 0.20

A2 1.30 1.50

A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

 0 8

All Dimensions in mm

Dimensions Value (in mm)

X 0.60

Y 1.55

C1 5.4

C2 1.27

Gauge Plane

Seating Plane

Detail ‘A’

Detail ‘A’

E

E1

h

L

D

eb

A2

A1

A

45

°

7

°~

9

°

A3

0.254

X

C1

C2

Y

DMG4435SSS

Document number: DS32041 Rev. 5 - 2

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September 2013

© Diodes Incorporated

DMG4435SSS

NEW PRODUCT

IMPORTANT NOTICE

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

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failure of the life support device or to affect its safety or effectiveness.

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