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FDMC8884
N-Channel Power Trench® MOSFET
30 V, 15 A, 19 mΩ
Features

General Description

„ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.

„ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant

Application
„ High side in DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook

Bottom

Top
Pin 1
S

S

S

G

D

D

D

D

D

5

4

G

D

6

3

S

D

7

2

S

D

8

1

S

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS

Drain to Source Voltage

Parameter

VGS

Gate to Source Voltage
Drain Current -Continuous (Package limited)

ID

TC = 25 °C

-Continuous (Silicon limited)

TC = 25 °C

-Continuous

TA = 25 °C

PD
TJ, TSTG

Units
V

±20

V

15
24
(Note 1a)

-Pulsed

9.0

A

40

Single Pulse Avalanche Energy

EAS

Ratings
30

(Note 3)

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

24
18

(Note 1a)

Operating and Storage Junction Temperature Range

2.3
-55 to +150

mJ
W
°C

Thermal Characteristics
RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

6.6
(Note 1a)

53

°C/W

Package Marking and Ordering Information
Device Marking
FDMC8884

Device
FDMC8884

©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3

Package
MLP 3.3x3.3

1

Reel Size
13 ’’

Tape Width
12 mm

Quantity
3000 units

www.fairchildsemi.com

FDMC8884 N-Channel Power Trench® MOSFET

April 2012

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V

ΔBVDSS
ΔTJ

Breakdown Voltage Temperature
Coefficient

ID = 250 μA, referenced to 25 °C

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

30

V
22

VDS = 24 V, VGS = 0 V

mV/°C
1

TJ = 125 °C

250

VGS = ±20 V, VDS = 0 V

μA

±100

nA

2.5

V

On Characteristics
VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 μA

ΔVGS(th)
ΔTJ

Gate to Source Threshold Voltage
Temperature Coefficient

ID = 250 μA, referenced to 25 °C

rDS(on)

Static Drain to Source On Resistance

gFS

Forward Transconductance

1.4

1.9
-6

mV/°C

VGS = 10 V, ID = 9.0 A

16

19

VGS = 4.5 V, ID = 7.2 A

22

30

VGS = 10 V, ID = 9.0 A, TJ = 125 °C

22

30

VDD = 5 V, ID = 9.0 A

24

mΩ
S

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate Resistance

VDS = 15 V, VGS = 0 V,
f = 1 MHz

513

685

pF

110

150

pF

76

115

pF

1.4

2.1

Ω

6

12

ns

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Qg(TOT)

VDD = 15 V, ID = 9.0 A,
VGS = 10 V, RGEN = 6 Ω

2

10

ns

15

27

ns

2

10

ns

Total Gate Charge

VGS = 0 V to 10 V

10

14

nC

Total Gate Charge

VGS = 0 V to 4.5 V VDD = 15 V
ID = 9.0 A

5.0

7.0

1.8

nC

2.2

nC

Qgs

Total Gate Charge

Qgd

Gate to Drain “Miller” Charge

nC

Drain-Source Diode Characteristics
VSD

Source to Drain Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = 9.0 A

(Note 2)

0.86

1.2

VGS = 0 V, IS = 1.6 A

(Note 2)

0.76

1.2

IF = 9.0 A, di/dt = 100 A/μs

V

13

18

ns

3

10

nC

NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

b.125 °C/W when mounted on
a minimum pad of 2 oz copper

a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper

SS
SF
DS
DF
G

SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4 A .

©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3

2

www.fairchildsemi.com

FDMC8884 N-Channel Power Trench® MOSFET

Electrical Characteristics TJ = 25 °C unless otherwise noted

4.0

VGS = 10 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

ID, DRAIN CURRENT (A)

40

30
VGS = 4 V

VGS = 4.5 V
VGS = 6 V

20

VGS = 3.5 V

10
VGS = 3 V

0
0

1

2

3.0
VGS = 3.5 V

2.0

VGS = 4.5 V

1.5
1.0
VGS = 10 V

VGS = 6 V

0.5

3

0

Figure 1. On-Region Characteristics

10
20
ID, DRAIN CURRENT (A)

30

40

Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage

1.6

80
ID = 9.0 A
VGS = 10 V
rDS(on), DRAIN TO

1.4
1.2
1.0
0.8
0.6
-75

SOURCE ON-RESISTANCE (mΩ)

NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

VGS = 4 V

2.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID = 9.0 A

70

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

60
50
40
TJ = 125 oC

30
20
TJ = 25 oC

-50

-25

0

25

50

75

10

100 125 150

2

4

TJ, JUNCTION TEMPERATURE (oC)

6

8

10

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance
vs Junction Temperature

Figure 4. On-Resistance vs Gate to
Source Voltage

40

100
IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 3 V

3.5

30
VDS = 5 V

20
TJ = 150 oC

TJ = 25 oC

10
TJ = -55 oC

0
1

2

3

4

TJ = 150 oC

1

TJ = 25 oC

0.1
0.01
TJ = -55 oC

0.001
0.0

5

VGS, GATE TO SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3

VGS = 0 V

10

Figure 6. Source to Drain Diode
Forward Voltage vs Source Current

3

www.fairchildsemi.com

FDMC8884 N-Channel Power Trench® MOSFET

Typical Characteristics TJ = 25 °C unless otherwise noted

1000
ID = 9.0 A

Ciss

8
CAPACITANCE (pF)

VGS, GATE TO SOURCE VOLTAGE (V)

10

VDD = 15V

6
VDD = 10 V

VDD = 20 V

4

Coss

100

2

Crss
f = 1 MHz
VGS = 0 V

50
0.1

0
0

3

6

9

12

1

Figure 7. Gate Charge Characteristics

ID, DRAIN CURRENT (A)

IAS, AVALANCHE CURRENT (A)

30

10

TJ = 25 oC
TJ = 100 oC

20
VGS = 10 V

10
Limited by Package

TJ = 125 oC

1
0.01

0.1

o

1

10

50

100

125

150

o

Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000

10

P(PK), PEAK TRANSIENT POWER (W)

100

ID, DRAIN CURRENT (A)

75

TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive
Switching Capability

100 us
1 ms
10 ms

THIS AREA IS
LIMITED BY rDS(on)

100 ms

SINGLE PULSE
TJ = MAX RATED

1s
10 s

o

RθJA = 125 C/W

0.01
0.01

VGS = 4.5 V

RθJC = 6.6 C/W

0
25

tAV, TIME IN AVALANCHE (ms)

0.1

30

Figure 8. Capacitance vs Drain
to Source Voltage

20

1

10

VDS, DRAIN TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

DC

TA = 25 oC

0.1

1

10

100

TA = 25 oC

10

1
0.5
-4
10

-3

10

-2

10

-1

10

1

100

10

1000

t, PULSE WIDTH (s)

VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe
Operating Area

©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3

SINGLE PULSE
RθJA = 125 oC/W

VGS = 10V

100

Figure 12. Single Pulse Maximum
Power Dissipation

4

www.fairchildsemi.com

FDMC8884 N-Channel Power Trench® MOSFET

Typical Characteristics TJ = 25 °C unless otherwise noted

2

NORMALIZED THERMAL
IMPEDANCE, ZθJA

1

0.1

DUTY CYCLE-DESCENDING ORDER

D = 0.5
0.2
0.1
0.05
0.02
0.01

PDM

t1

0.01

t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA

SINGLE PULSE
o

RθJA = 125 C/W

0.001
-4
10

-3

10

-2

10

-1

10

1

10

100

1000

t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Transient Thermal Response Curve

©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3

5

www.fairchildsemi.com

FDMC8884 N-Channel Power Trench® MOSFET

Typical Characteristics TJ = 25 °C unless otherwise noted

FDMC8884 N-Channel Power Trench® MOSFET

Dimensional Outline and Pad Layout

©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3

6

www.fairchildsemi.com

tm

tm

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

2.

A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61

©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3

7

www.fairchildsemi.com

FDMC8884 N-Channel Power Trench® MOSFET

TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
PowerTrench®
F-PFS™
The Power Franchise®
®
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TINYOPTO™
CTL™
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Saving our world, 1mW/W/kW at a time™
Current Transfer Logic™
ISOPLANAR™
TinyPWM™
DEUXPEED®
Marking Small Speakers Sound Louder SignalWise™
TinyWire™
Dual Cool™
SmartMax™
and Better™
TranSiC®
EcoSPARK®
SMART START™
MegaBuck™
TriFault Detect™
EfficentMax™
Solutions for Your Success™
MICROCOUPLER™
TRUECURRENT®*
ESBC™
SPM®
MicroFET™
μSerDes™
STEALTH™
MicroPak™
®
SuperFET®
MicroPak2™
SuperSOT™-3
MillerDrive™
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SuperSOT™-6
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FPS™

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