FDS4435BZ Datasheet. Www.s Manuals.com. Rc1 Fairchild

User Manual: Datasheets FDS4435, FDS4435BZ.

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FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features

General Description

„ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A

This

„ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A

Semiconductor’s advanced PowerTrench® process that has

„ Extended VGSS range (-25V) for battery applications

been especially tailored to minimize the on-state resistance.

„ HBM ESD protection level of ±3.8KV typical (note 3)

This device is well suited for Power Management and load

„ High performance trench technology for extremely low rDS(on)

switching applications common in Notebook Computers and

„ High power and current handling capability

Portable Battery Packs.

P-Channel

MOSFET

is

produced

using

Fairchild

„ Termination is Lead-free and RoHS compliant

D
D
D

D

5

4

G

D

6

3

S

D

7

2

S

D

8

1

S

D

G
S
S

Pin 1

S

SO-8

MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS

Drain to Source Voltage

Parameter

VGS

Gate to Source Voltage
Drain Current -Continuous

ID

TA = 25°C

(Note 1a)

-Pulsed

PD

Ratings
-30

Units
V

±25

V

-8.8
-50

Power Dissipation

TA = 25°C

(Note 1a)

2.5

Power Dissipation

TA = 25°C

(Note 1b)

1.0

EAS

Single Pulse Avalanche Energy

TJ, TSTG

Operating and Storage Junction Temperature Range

(Note 4)

A
W

24

mJ

-55 to +150

°C

Thermal Characteristics
RTJC

Thermal Resistance, Junction to Case

RTJA

Thermal Resistance, Junction to Ambient

25
(Note 1a)

50

°C/W

Package Marking and Ordering Information
Device Marking
FDS4435BZ

Device
FDS4435BZ

©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1

Package
SO-8

1

Reel Size
13’’

Tape Width
12mm

Quantity
2500units

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench® MOSFET

April 2009

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS

Drain to Source Breakdown Voltage

ID = -250PA, VGS = 0V

'BVDSS
'TJ

Breakdown Voltage Temperature
Coefficient

-30

V

ID = -250PA, referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = -24V, VGS = 0V

1

PA

IGSS

Gate to Source Leakage Current

VGS = ±25V, VDS = 0V

±10

PA

-3

V

mV/°C

-21

On Characteristics
VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = -250PA

'VGS(th)
'TJ

Gate to Source Threshold Voltage
Temperature Coefficient

ID = -250PA, referenced to 25°C

6

VGS = -10V, ID = -8.8A

16

20

rDS(on)

Static Drain to Source On Resistance

VGS = -4.5V, ID = -6.7A

26

35

VGS = -10V, ID = -8.8A, TJ = 125°C

22

28

VDS = -5V, ID = -8.8A

24

gFS

Forward Transconductance

-1

-2.1

mV/°C

m:
S

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate Resistance

VDS = -15V, VGS = 0V,
f = 1MHz
f = 1MHz

1385

1845

275

365

pF
pF

230

345

pF
:

4.5

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Rise Time

VDD = -15V, ID = -8.8A,
VGS = -10V, RGEN = 6:

td(off)

Turn-Off Delay Time

tf

Fall Time

Qg

Total Gate Charge

VGS = 0V to -10V

Qg

Total Gate Charge

VGS = 0V to -5V

Qgs

Gate to Source Charge

Qgd

Gate to Drain “Miller” Charge

VDD = -15V,
ID = -8.8A

10

20

ns

6

12

ns

30

48

ns

12

22

ns

28

40

nC

16

23

nC

5.2

nC

7.4

nC

Drain-Source Diode Characteristics
VSD

Source to Drain Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0V, IS = -8.8A

(Note 2)

IF = -8.8A, di/dt = 100A/Ps

-0.9

-1.2

V

29

44

ns

23

35

nC

NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.

b. 125°C/W when mounted on
a minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V

©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1

2

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench® MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

4.0

50
40

NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

VGS = -10V
VGS = -5V
VGS = -4.5V

30
VGS = -4V

20

VGS = -3.5V

10
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

0
0

1

2

3

3.0
VGS = -4.5V

2.5
VGS = -4V

1.5
VGS = -10V

1.0
0.5
0

4

10

20

30

40

50

-ID, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics

Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage

1.6

60
ID = -8.8A
VGS = -10V

1.2
1.0
0.8
0.6
-75

-50

-25

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

ID = -8.8A

rDS(on), DRAIN TO

1.4

0

25

50

75

SOURCE ON-RESISTANCE (m:)

NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

VGS = -5V

2.0

-VDS, DRAIN TO SOURCE VOLTAGE (V)

50
40
TJ = 125oC

30
20

TJ = 25oC

10

100 125 150

2

o

TJ, JUNCTION TEMPERATURE ( C)

4

6

8

10

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance
vs Junction Temperature

Figure 4. On-Resistance vs Gate to
Source Voltage

50

100
-IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

VGS = -3.5V

3.5

40
VDS = -5V

30
20

TJ = 150oC

10
TJ = 25oC

TJ =-55oC

0
1

2

3

4

1
0.1

TJ = 25oC

TJ = 150oC

0.01

TJ = -55oC

0.001

0.0001
0.0

5

0.2

0.4

0.6

0.8

1.0

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1

VGS = 0V

10

Figure 6. Source to Drain Diode
Forward Voltage vs Source Current

3

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench® MOSFET

Typical Characteristics TJ = 25°C unless otherwise noted

-VGS, GATE TO SOURCE VOLTAGE(V)

10

4000
ID = -8.8A

Ciss

8
CAPACITANCE (pF)

VDD = -10V

6
VDD = -15V

VDD = -20V

4
2

1000
Coss

Crss
f = 1MHz
VGS = 0V

0
0

5

10

15

20

25

100
0.1

30

1

Qg, GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain
to Source Voltage
-4

10
-Ig, GATE LEAKAGE CURRENT(A)

-IAS, AVALANCHE CURRENT(A)

20

10

TJ = 25oC
TJ = 125oC

VDS = 0V
-5

10

TJ = 125oC
-6

10

-7

10

TJ = 25oC
-8

10

-9

1
0.01

0.1

1

10

10

30

0

5

10

15

20

25

30

-VGS, GATE TO SOURCE VOLTAGE(V)

tAV, TIME IN AVALANCHE(ms)

Figure 9. Unclamped Inductive
Switching Capability

Figure 10. Gate Leakage Current vs Gate to
Source Voltage
100

10
8

-ID, DRAIN CURRENT (A)

-ID, DRAIN CURRENT (A)

30

10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -10V

6
VGS = -4.5V

4
2

100us

10

1ms
10ms

1
THIS AREA IS
LIMITED BY rDS(on)

0.1

100ms
SINGLE PULSE
TJ = MAX RATED

1s
10s
DC

o

RTJA = 125 C/W

o

TA = 25oC

RTJA = 50 C/W

0.01
0.1

0
25

50

75

100

125

150

o

TA, AMBIENT TEMPERATURE ( C)

Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature

©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1

1

10

80

-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 12. Forward Bias Safe
Operating Area

4

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench® MOSFET

Typical Characteristics TJ = 25°C unless otherwise noted

P(PK), PEAK TRANSIENT POWER (W)

1000
VGS = -10 V

SINGLE PULSE
o

RTJA = 125 C/W
o

TA = 25 C

100

10

1
0.5
-4
10

-3

-2

10

-1

10

10

1

10

100

1000

t, PULSE WIDTH (s)

Figure 13. Single Pulse Maximum Power Dissipation
2

NORMALIZED THERMAL
IMPEDANCE, ZTJA

1

0.1

DUTY CYCLE-DESCENDING ORDER

D = 0.5
0.2
0.1
0.05
0.02
0.01

PDM

0.01

t1
t2

SINGLE PULSE

NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA

o

RTJA = 125 C/W

0.001
-4
10

-3

10

-2

10

-1

10

1

10

100

1000

t, RECTANGULAR PULSE DURATION (sec)

Figure 14. Transient Thermal Response Curve

©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1

5

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench® MOSFET

Typical Characteristics TJ = 25°C unless otherwise noted

tm

tm

tm

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used herein:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

2.

A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40

©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench® MOSFET

TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
PowerTrench®
F-PFS™
The Power Franchise®
PowerXS™
Build it Now™
FRFET®
®
SM
Global Power Resource
Programmable Active Droop™
CorePLUS™
®
Green FPS™
QFET
CorePOWER™
TinyBoost™
QS™
Green FPS™ e-Series™
CROSSVOLT™
TinyBuck™
Quiet Series™
Gmax™
CTL™
TinyLogic®
RapidConfigure™
GTO™
Current Transfer Logic™
TINYOPTO™
IntelliMAX™
EcoSPARK®
TinyPower™
EfficentMax™
ISOPLANAR™
™
TinyPWM™
Saving our world, 1mW /W /kW at a time™
EZSWITCH™ *
MegaBuck™
TinyWire™
™*
SmartMax™
MICROCOUPLER™
TriFault Detect™
SMART START™
MicroFET™
TRUECURRENT™*
SPM®
MicroPak™
®
PSerDes™
STEALTH™
MillerDrive™
®
Fairchild
SuperFET™
MotionMax™
®
Fairchild Semiconductor
SuperSOT™-3
Motion-SPM™
FACT Quiet Series™
SuperSOT™-6
UHC®
OPTOLOGIC®
®
FACT
OPTOPLANAR®
Ultra FRFET™
SuperSOT™-8
®
®
FAST
UniFET™
SupreMOS™
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FETBench™
VisualMax™
Sync-Lock™
PDP
SPM™
®
FlashWriter *
XS™
®*
Power-SPM™
FPS™

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Source Exif Data:

File Type                       : PDF
File Type Extension             : pdf
MIME Type                       : application/pdf
PDF Version                     : 1.6
Linearized                      : No
XMP Toolkit                     : Adobe XMP Core 4.0-c316 44.253921, Sun Oct 01 2006 17:14:39
Producer                        : Acrobat Distiller 6.0.1 (Windows)
Create Date                     : 2009:04:20 11:40:30+08:00
Creator Tool                    : FrameMaker 7.1
Modify Date                     : 2016:03:30 11:20:35+03:00
Metadata Date                   : 2016:03:30 11:20:35+03:00
Document ID                     : uuid:04d7c375-554f-446e-8a57-23b1dd81008d
Instance ID                     : uuid:5dcd3c7e-c6d3-4a05-b130-e35c5de18a58
Format                          : application/pdf
Creator                         : 
Title                           : FDS4435BZ - Datasheet. www.s-manuals.com.
Subject                         : FDS4435BZ - Datasheet. www.s-manuals.com.
Page Count                      : 7
Keywords                        : FDS4435BZ, -, Datasheet., www.s-manuals.com.
Warning                         : [Minor] Ignored duplicate Info dictionary

EXIF Metadata provided by EXIF.tools