FDS4435BZ Datasheet. Www.s Manuals.com. Rc1 Fairchild
User Manual: Datasheets FDS4435, FDS4435BZ.
Open the PDF directly: View PDF 
.
Page Count: 7
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
www.fairchildsemi.com
1
FDS4435BZ P-Channel PowerTrench® MOSFET
FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS compliant
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -30 V
VGS Gate to Source Voltage ±25 V
ID
Drain Current -Continuous TA= 25°C (Note 1a) -8.8 A
-Pulsed -50
PD
Power Dissipation TA = 25°C (Note 1a) 2.5 W
Power Dissipation TA = 25°C (Note 1b) 1.0
EAS Single Pulse Avalanche Energy (Note 4) 24 mJ
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RTJC Thermal Resistance, Junction to Case 25 °C/W
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDS4435BZ FDS4435BZ SO-8 13’’ 12mm 2500units
G
S
S
S
D
D
D
D
Pin 1
SO-8
81
G
S
S
S
D
D
D
D
5
6
7
3
2
4
April 2009
FDS4435BZ P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
2
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V -30 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient ID = -250PA, referenced to 25°C -21 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V 1 PA
IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 PA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250PA -1 -2.1 -3 V
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250PA, referenced to 25°C 6 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = -10V, ID = -8.8A 16 20
m:VGS = -4.5V, ID = -6.7A 26 35
VGS = -10V, ID = -8.8A, TJ = 125°C 22 28
gFS Forward Transconductance VDS = -5V, ID = -8.8A 24 S
Dynamic Characteristics
Ciss Input Capacitance VDS = -15V, VGS = 0V,
f = 1MHz
1385 1845 pF
Coss Output Capacitance 275 365 pF
Crss Reverse Transfer Capacitance 230 345 pF
RgGate Resistance f = 1MHz 4.5 :
Switching Characteristics
td(on) Turn-On Delay Time
VDD = -15V, ID = -8.8A,
VGS = -10V, RGEN = 6:
10 20 ns
trRise Time 612ns
td(off) Turn-Off Delay Time 30 48 ns
tfFall Time 12 22 ns
QgTotal Gate Charge VGS = 0V to -10V
VDD = -15V,
ID = -8.8A
28 40 nC
QgTotal Gate Charge VGS = 0V to -5V 16 23 nC
Qgs Gate to Source Charge 5.2 nC
Qgd Gate to Drain “Miller” Charge 7.4 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS= -8.8A (Note 2) -0.9 -1.2 V
trr Reverse Recovery Time IF = -8.8A, di/dt = 100A/Ps29 44 ns
Qrr Reverse Recovery Charge 23 35 nC
NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
a. 50°C/W when mounted on
a 1 in2pad of 2 oz copper. b. 125°C/W when mounted on
a minimum pad of 2 oz copper.
FDS4435BZ P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
3
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
01234
0
10
20
30
40
50
VGS = -5V
VGS = -4V
VGS = -10V
VGS = -3.5V
VGS = -4.5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 1020304050
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS = -5V
VGS = -4V
VGS = -10V
VGS = -3.5V
VGS = -4.5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = -8.8A
VGS = -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
246810
10
20
30
40
50
60
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ= 125oC
TJ= 25oC
ID= -8.8A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (m:)
-VGS, GATE TO SOURCE VOLTAGE (V)
O n -R es i st an ce v s G a te to
Source Voltage
Figure 5. Transfer Characteristics
12345
0
10
20
30
40
50
VDS = -5V
TJ =-55oC
TJ= 25oC
TJ= 150oC
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.0001
0.001
0.01
0.1
1
10
100
TJ = -55oC
TJ = 25oC
TJ= 150oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current
FDS4435BZ P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
4
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
Figure 7.
0 5 10 15 20 25 30
0
2
4
6
8
10
ID = -8.8A
VDD = -20V
VDD = -10V
-VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = -15V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
30
f = 1MHz
VGS = 0V
Crss
Coss
Ciss
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4000
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10
1
10
TJ= 25oC
TJ= 125oC
tAV, TIME IN AVALANCHE(ms)
-IAS, AVALANCHE CURRENT(A)
30
20
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
0 5 10 15 20 25 30
10-9
10-8
10-7
10-6
10-5
10-4
TJ = 25oC
TJ= 125oC
VDS = 0V
-Ig,GATE LEAKAGE CURRENT(A)
-VGS,GATE TO SOURCE VOLTAGE(V)
Gate Leakage Current vs Gate to
Source Voltage
F i g u r e 1 1 . M a x i m u m C o n t i n u o u s D r a i n
Current vs Ambient Temperature
25 50 75 100 125 150
0
2
4
6
8
10
RTJA = 50oC/W
VGS = -4.5V
VGS = -10V
-ID, DRAIN CURRENT (A)
TA, AMBIENT TEMPERATURE (oC)
Figure 12.
0.1 1 10
0.01
0.1
1
10
100
100us
SINGLE PULSE
TJ = MAX RATED
RTJA = 125oC/W
TA=25
oC
THIS AREA IS
LIMITED BY rDS(on)
80
10s
1ms
10ms
100ms
1s
DC
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
For w a r d Bia s S a fe
Operating Area
Typical Characteristics TJ = 25°C unless otherwise noted
FDS4435BZ P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
5
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
Figure 13. Single Pulse Maximum Power Dissipation
10
-4
10
-3
10
-2
10
-1
110
100 1000
1
10
100
1000
P
(PK)
, PEAK TRANSIENT POWER (W)
V
GS
= -10 V SINGLE PULSE
R
T
JA
= 125
o
C/W
T
A
= 25
o
C
t, PULSE WIDTH (s)
0.5
Figure 14. Transient Thermal Response Curve
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
R
T
JA
= 125
o
C/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, Z
T
JA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
Typical Characteristics TJ = 25°C unless otherwise noted
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™*
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter®*
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
PSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
t
m
t
m
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
Rev. I40
