FDW2506P Datasheet. Www.s Manuals.com. Rc Fairchild

User Manual: Marking of electronic components, SMD Codes 25, 250, 2506P, 2509NZ, 251, 251**, 252, 252N10NS, 2546, 258, 25N, 25P, 25R, 25R*, 25T, 25U. Datasheets APL5325BI-TRL, BSC252N10NSF G, DTC124ECA, DTC124EE, DTC124EEB, DTC124EKA, DTC124EUA, DTC124EUB, FDW2506P, FDW2509NZ, KTY82/250, KTY82/251, KTY82/252, LM258DMR2G, TK71525AS, TPS2546RTER, TSH251CT, TSH251CX, UDZS12B, ZD25-AE3, ZD25-CL2, ZR25D, ZR25D01, ZR25D02, ZTR250F02, ZTR250Z02.

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FDW2506P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description

Features

This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).

• –5.3 A, –20 V,

• Extended VGSS range (±12V) for battery applications

Applications

• Low gate charge

• Load switch

• High performance trench technology for extremely
low RDS(ON)

• Motor drive
• DC/DC conversion

RDS(ON) = 0.022 Ω @ VGS = –4.5 V.
RDS(ON) = 0.033 Ω @ VGS = –2.5V.

• Low profile TSSOP-8 package

• Power management

G2
S2
S2
D2
G1
S1
S1
D1

TSSOP-8

1

8

2

7

3

6

4

5

Pin 1

Absolute Maximum Ratings
Symbol

TA=25oC unless otherwise noted

Ratings

Units

VDSS

Drain-Source Voltage

Parameter

–20

V

VGSS

Gate-Source Voltage

±12

V

ID

Drain Current

–5.3

A

– Continuous

(Note 1)

– Pulsed
PD

–30

Power Dissipation for Single Operation

TJ, TSTG

(Note 1a)

1.0

(Note 1b)

0.6

W

-55 to +150

°C

(Note 1a)

125

°C/W

(Note 1b)

208

Operating and Storage Junction Temperature Range

Thermal Characteristics
RθJA

Thermal Resistance, Junction-to-Ambient

Package Marking and Ordering Information
Device Marking

Device

Reel Size

Tape width

Quantity

2506P

FDW2506P

13’’

12mm

2500 units

2000 Fairchild Semiconductor Corporation

FDW2506P Rev. C (W)

FDW2506P

October 2000

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min

Typ

Max Units

–12

mV/°C

Off Characteristics
BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V, ID = –250 µA

∆BVDSS
===∆TJ
IDSS

Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current

ID = –250 µA, Referenced to 25°C
VDS = –16 V,

VGS = 0 V

–1

µA

IGSSF

Gate–Body Leakage, Forward

VGS = –12 V,

VDS = 0 V

–100

nA

IGSSR

Gate–Body Leakage, Reverse

VGS = 12 V,

VDS = 0 V

100

nA

On Characteristics

–20

V

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = –250 µA

∆VGS(th)
===∆TJ
RDS(on)

Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance

ID = –250 µA, Referenced to 25°C

ID(on)

On–State Drain Current

VGS = –4.5 V,
ID = –5.3 A
ID = –4.4 A
VGS = –2.5 V,
VGS = –4.5 V, ID = –5.3 A, TJ=125°C
VGS = –4.5 V,
VDS = –5 V

gFS

Forward Transconductance

VDS = –5 V,

ID = –5.3 A

VDS = –10 V,
f = 1.0 MHz

V GS = 0 V,

VDD = –5 V,
VGS = –4.5 V,

ID = –1 A,
RGEN = 6 Ω

–0.6

–0.8

–1.5

3
0.018
0.026
0.023

V
mV/°C

0.022
0.033
0.035

–30

Ω

A
24

S

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics
td(on)

Turn–On Delay Time

tr

Turn–On Rise Time

td(off)
tf
Qg

Total Gate Charge

Qgs

Gate–Source Charge

Qgd

Gate–Drain Charge

1015

pF

446

pF

118

pF

(Note 2)

13

23

ns

17

31

ns

Turn–Off Delay Time

75

120

ns

Turn–Off Fall Time

38

61

ns

21

34

nC

VDS = –10V,
VGS = –4.5 V

ID = –5.3 A,

4.5

nC

6

nC

Drain–Source Diode Characteristics and Maximum Ratings
IS

Maximum Continuous Drain–Source Diode Forward Current

VSD

Drain–Source Diode Forward
Voltage

VGS = 0 V,

IS = –0.83 A

(Note 2)

–0.7

–0.83

A

–1.2

V

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)

RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.

b)

RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDW2506P Rev. C (W)

FDW2506P

Electrical Characteristics

FDW2506P

Typical Characteristics

30

2.6

-ID, DRAIN CURRENT (A)

-3.0V

-3.5V

25

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

VGS = -4.5V
-2.5V
20
15
-2.0V
10
5
0

2.4
VGS = -2.0V
2.2
2
1.8
1.6

-2.5V

1.4
-3.0V
1.2

-3.5V
-4.5V

1
0.8

0

1

2

3

4

0

6

12

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

30

0.07
ID = -5.3A
VGS = -4.5V

1.3

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

24

Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.

1.4

1.2
1.1
1
0.9
0.8

ID = -2.7A
0.06
0.05
0.04
TA = 125oC
0.03
TA = 25oC
0.02
0.01

-50

-25

0

25

50

75

100

125

150

1

2

o

3

4

5

-VGS, GATE TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE ( C)

Figure 3. On-Resistance Variation with
Temperature.

Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100

TA = -55oC

VDS = -5V

-IS, REVERSE DRAIN CURRENT (A)

30
25oC

25
-ID, DRAIN CURRENT (A)

18

-ID, DIRAIN CURRENT (A)

o

125 C
20
15
10
5
0

VGS = 0V
10
TA = 125oC

1

25oC
0.1
-55oC
0.01
0.001
0.0001

0.5

1

1.5

2

2.5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

3

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.

FDW2506P Rev. C (W)

FDW2506P

Typical Characteristics

3500
ID = -5.3A

VDS = -5V

f = 1 MHz
VGS = 0 V

3000

-10V
4
-15V

CAPACITANCE (pF)

-VGS, GATE-SOURCE VOLTAGE (V)

5

3

2

2500
CISS

2000
1500
1000

1

COSS

500

CRSS
0

0
0

4

8

12

16

20

24

0

4

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

12

16

20

Figure 8. Capacitance Characteristics.

100
P(pk), PEAK TRANSIENT POWER (W)

30
RDS(ON) LIMIT

-ID, DRAIN CURRENT (A)

8

-VDS, DRAIN TO SOURCE VOLTAGE (V)

100µ
10
10ms
100ms
1s

1
10s
DC

VGS = -4.5V
SINGLE PULSE
RθJA = 208oC/W

0.1

TA = 25oC

1

10

20
15
10
5
0
0.001

0.01
0.1

SINGLE PULSE
RθJA = 208°C/W
TA = 25°C

25

100

0.01

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE

0.1

1

10

100

1000

t1, TIME (sec)

-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Single Pulse Maximum
Power Dissipation.

1
D = 0.5

RθJA(t) = r(t) + RθJA
RθJA = 208 °C/W

0.2

0.1

0.1
0.05

P(pk)

0.02

0.01

t1

0.01

t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2

SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDW2506P Rev. C (W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST®

FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
PowerTrench®

QFET™
QS™
QT Optoelectronics™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™

VCX™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. F1

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