FDW2506P Datasheet. Www.s Manuals.com. Rc Fairchild
User Manual: Marking of electronic components, SMD Codes 25, 250, 2506P, 2509NZ, 251, 251**, 252, 252N10NS, 2546, 258, 25N, 25P, 25R, 25R*, 25T, 25U. Datasheets APL5325BI-TRL, BSC252N10NSF G, DTC124ECA, DTC124EE, DTC124EEB, DTC124EKA, DTC124EUA, DTC124EUB, FDW2506P, FDW2509NZ, KTY82/250, KTY82/251, KTY82/252, LM258DMR2G, TK71525AS, TPS2546RTER, TSH251CT, TSH251CX, UDZS12B, ZD25-AE3, ZD25-CL2, ZR25D, ZR25D01, ZR25D02, ZTR250F02, ZTR250Z02.
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October 2000
2000 Fairchild Semiconductor Corporation FDW2506P Rev. C (W)
FDW2506P
Dual P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –5.3 A, –20 V, RDS(ON) = 0.022 Ω @ VGS = –4.5 V.
RDS(ON) = 0.033 Ω @ VGS = –2.5V.
• Extended VGSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –20 V
VGSS Gate-Source Voltage ±12 V
IDDrain Current – Continuous (Note 1) –5.3 A
– Pulsed –30
PDPower Dissipation for Single Operation (Note 1a) 1.0 W
(Note 1b) 0.6
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 125 °C/W
(Note 1b) 208
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2506P FDW2506P 13’’ 12mm 2500 units
FDW2506P
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FDW2506P Rev. C (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA–20 V
∆BVDSS
===∆TJ
Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to 25°C–12 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA
IGSSR Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA–0.6 –0.8 –1.5 V
∆VGS(th)
===∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = –250 µA, Referenced to 25°C3mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –4.5 V, ID = –5.3 A
VGS = –2.5 V, ID = –4.4 A
VGS = –4.5 V, ID = –5.3 A, TJ=125°C
0.018
0.026
0.023
0.022
0.033
0.035
Ω
ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –30 A
gFS Forward Transconductance VDS = –5 V, ID = –5.3 A 24 S
Dynamic Characteristics
Ciss Input Capacitance 1015 pF
Coss Output Capacitance 446 pF
Crss Reverse Transfer Capacitance
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz 118 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 13 23 ns
trTurn–On Rise Time 17 31 ns
td(off) Turn–Off Delay Time 75 120 ns
tfTurn–Off Fall Time
VDD = –5 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
38 61 ns
QgTotal Gate Charge 21 34 nC
Qgs Gate–Source Charge 4.5 nC
Qgd Gate–Drain Charge
VDS = –10V, ID = –5.3 A,
VGS = –4.5 V
6nC
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current –0.83 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –0.83 A (Note 2) –0.7 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW2506P
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FDW2506P Rev. C (W)
Typical Characteristics
0
5
10
15
20
25
30
01234
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
VGS = -4.5V
-3.0V
-2.5V
-2.0V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 6 12 18 24 30
-ID, DIRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANC
E
VGS = -2.0V
-3.0V
-3.5V
-4.5V
-2.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANC
E
ID = -5.3A
VGS = -4.5V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = -2.7A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0.511.522.53
-VGS, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A
)
TA = -55oC25oC
125oC
VDS = -5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A
)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2506P
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FDW2506P Rev. C (W)
Typical Characteristics
0
1
2
3
4
5
0 4 8 12162024
Qg, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
ID = -5.3A VDS = -5V
-10V
-15V
0
500
1000
1500
2000
2500
3000
3500
0 4 8 12 16 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A
)
DC10s
1s100ms
100
µ
RDS(ON) LIMIT
VGS = -4.5V
SINGLE PULSE
RθJA = 208oC/W
TA = 25oC
10ms
0
5
10
15
20
25
30
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W
)
SINGLE PULSE
RθJA = 208°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) + RθJA
RθJA = 208 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P
(p
k
)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2506P
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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