IMX9 Datasheet. Www.s Manuals.com. Rohm

User Manual: Marking of electronic components, SMD Codes X9, X9-, X9-***, X9W, X9p, X9t. Datasheets 2N7002BKW, IMX9, PZU2.7BA , RT9169-16PB.

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IMX9
Transistors

General purpose transistor
(isolated dual transistors)
IMX9
zExternal dimensions (Units : mm)
1.1 +0.2
−0.1

2.9±0.2
1.9±0.2

0.8±0.1

0.95 0.95
(6)

1.6
(2) (1)
+0.1
0.3 −0.05

(3)

2.8±0.2

(5)

+0.2
−0.1

(4)

0~0.1

+0.1
0.15 −0.06

All terminals have same dimensions

zStructure
Epitaxial planar type
NPN silicon transistor

ROHM : SMT6
EIAJ : SC-74

0.3~0.6

zFeatures
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
machine.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.

Abbreviated symbol: X9

The following characteristics apply to both Tr1 and Tr2.

zAbsolute maximum ratings (Ta = 25°C)
Parameter

zEquivalent circuit

Symbol

Limits

Unit

Collector-base voltage

VCBO

25

V

Collector-emitter voltage

VCEO

20

V

Emitter-base voltage

VEBO

12

V

Collector current

IC

500

mA

Power dissipation

Pd

300(TOTAL)

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55~+150

°C

(4)

(5)

(6)

Tr1
Tr2

(3)

∗

(2)

(1)

∗ 200mW per element must not be exceeded.
zElectrical characteristics (Ta = 25°C)
Symbol

Min.

Typ.

Max.

Collector-base breakdown voltage

BVCBO

25

−

−

V

IC=10µA

Collector-emitter breakdown voltage

BVCEO

20

−

−

V

IC=1mA

Emitter-base breakdown voltage

IE=10µA

Parameter

Unit

Conditions

BVEBO

12

−

−

V

Collector cutoff current

ICBO

−

−

0.5

µA

VCB=20V

Emitter cutoff current

IEBO

−

−

0.5

µA

VEB=10V

VCE(sat)

−

0.18

0.4

V

IC/IB=500mA/20mA

hFE

560

−

2700

−

VCE=3V, IC=10mA

Collector-emitter saturation voltage
DC current transfer ratio

fT

−

350

−

MHz

Output capacitance

Cob

−

8

−

pF

VCB=10V, IE=0A, f=1MHz

Output On-resistance

Ron

−

0.8

−

Ω

IB=1mA, Vi=100mVrms, f=1kHz

Transition frequency

VCE=10V, IE=−50mA, f=100MHz

IMX9
Transistors
zPackaging specifications
Packaging type

Part No.

Taping

Code

T110

Basic ordering unit (pieces)

3000

IMX9

zElectrical characteristic curves
2.0µA

1.6

1.4µA

1.8µA

1.2µA
1.2

1.0µA
0.8µA

0.8
0.6µA
0.4µA

0.4

0.2µA
IB=0

0
0

0.1

0.2

0.3

0.4

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

DC CURRENT GAIN : hFE

2000
1000
500

3V
1V

200
100
50
20
10

0.8mA

600

0.6mA
400

0.4mA
0.2mA

200

Ta=25°C
Measured using
IB=0mA pulse current.
4
6
8
10

2

10000

VCE=3V
Measured using
pulse current.

5000
2000
1000
Ta=100°C
25°C
−25°C

500
200
100
50
20

1

2

5

10 20

50 100 200 500 1000

COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector
current (Ι)

10

1

2

5

10 20

50 100 200

500 1000

COLLECTOR CURRENT : IC (mA)

Fig.5 DC current gain vs.
collector current (ΙΙ)

Ta=100°C
25°C
−25°C

200
100
50
20
10
5
2
1
0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded emitter output
characteristics (ΙΙ)

DC CURRENT GAIN : hFE

Ta=25°C
Measured using
pulse current.
VCE=5V

5000

1.2mA
1.0mA

VCE=3V
Measured using
pulse current.

500

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter output
characteristics(Ι)

10000

800

0
0

0.5

1000

1.8mA 2.0mA
1.6mA
1.4mA

Fig.3 Grounded emitter propagation
characteristics

COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)

1.6µA

COLLECTOR CURRENT : IC (mA)

1000

Ta=25°C

COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

2.0

2000

Ta=25°C
Measured using
pulse current.

1000
500
200
100
50

IC/IB=100
50
25

20
10

10

5
2

1

2

5

10 20

50 100 200 5001000

COLLECTOR CURRENT : IC (mA)

Fig.6 Collector-emitter saturation
voltage vs. collector current (Ι)

IMX9

500
200
100
Ta=100°C
25°C
−25°C

50
20
10
5
2

1

2

5

10 20

50 100 200 5001000

Ta=25°C
Pulsed

5000
IC/IB=10
25
50
100

2000
1000
500
200
100
50
20
10

1

COLLECTOR CURRENT : IC (mA)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

TRANSITION FREQUENCY : fT (MHz)

2000
1000
500
200
100
50
20
10
−1 −2

−5 −10 −20 −50 −100−200 −500−1000
EMITTER CURRENT : IE (mA)

V0
×RL
Vi-V0

Ta=−25°C
25°C
100°C

2000
1000
500
200
100
50
20
10

1

200
100
50
20
10
5
2
1
0.1 0.2

Output
V0

5 10

20

50 100 200

5001000

Fig.9 Base-emitter saturation voltage
vs. collector current (ΙΙ)

Ta=25°C
f=1kHz
Vi=100mV(rms)
RL=1kΩ

50
20
10
5
2
1
0.5
0.2

0.5 1

2

5

10 20

50 100

Fig.11 Collector output capacitance
vs. collector-base voltage

V

2

COLLECTOR CURRENT : IC (mA)

Ta=25°C
f=1MHz
IE=0A

500

RL=1kΩ

Ron=

500 1000

lC/lB=10
Measured using
pulse current.

5000

100

1000

zRon measurement circuit

IB

50 100 200

COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.10 Gain bandwidth product vs.
emitter current

Input
Vi
1kHz
100mV(rms)

10 20

Fig.8 Base-emitter saturation
voltage vs. collector current (Ι)

Ta=25°C
VCE=10V
Measured using
pulse current.

5000

5

10000

COLLECTOR CURRENT : IC (mA)

Fig.7 Collector-emitter saturation
voltage vs. collector current (ΙΙ)

10000

2

BASE SATURATION VOLTAGE : VBE(sat) (mV)

10000

IC/IB=25
Measured using
pulse current.

1000

ON RESISTANCE : Ron (Ω)

2000

BASE SATURATION VOLTAGE : VBE(sat) (mV)

COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)

Transistors

0.1
0.01 0.02 0.05 0.1 0.2

0.5

1

2

5

BASE CURRENT : IB (mA)

Fig.12 Output-on resistance vs.
base current

10

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0

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