IMX9 Datasheet. Www.s Manuals.com. Rohm
User Manual: Marking of electronic components, SMD Codes X9, X9-, X9-***, X9W, X9p, X9t. Datasheets 2N7002BKW, IMX9, PZU2.7BA , RT9169-16PB.
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IMX9
Transistors
General purpose transistor
(isolated dual transistors)
IMX9
z
zz
zFeatures
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
machine.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
z
zz
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr1 and Tr2.
z
zz
zExternal dimensions (Units : mm)
ROHM : SMT6
EIAJ : SC-74 Abbreviated symbol: X9
(1)
(2)
(3)
0.3 +0.1
−0.05
1.6
2.8±0.2
+0.2
−0.1
(6)
(5)
(4)
0.95 0.95
1.9±0.2
2.9±0.2 1.1+0.2
0.8±0.1
−0.1
0~0.1
0.3~0.6
0.15 −0.06
+0.1
All terminals have same dimensions
z
zz
zAbsolute maximum ratings (Ta = 25°C) z
zz
zEquivalent circuit
Parameter Symbol Limits Unit
V
CBO
25 V
V
CEO
20 V
V
EBO
12 V
I
C
500 mA
Tj 150 °C
Tstg −55~+150 °C
Pd 300(TOTAL) mW
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power dissipation
∗
200mW per element must not be exceeded.
Tr
2
Tr
1
(4) (5) (6)
(3) (2) (1)
z
zz
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Min.
25
20
12
−
−
560
−
−
−
−
−
−
−
0.18
−
−
−
0.5
0.5
2700
0.4
VIC=10µA
IC=1mA
IE=10µA
VCB=20V
VEB=10V
VCE=3V, IC=10mA
IC/IB=500mA/20mA
V
V
µA
µA
−
V
Typ. Max. Unit Conditions
fT
Ron
Cob
−
−
−
350
0.8
8
−
−
−
VCE=10V, IE=−50mA, f=100MHz
IB=1mA, Vi=100mVrms, f=1kHz
VCB=10V, IE=0A, f=1MHz
MHz
Ω
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Collector-emitter saturation voltage
IMX9
Transistors
z
zz
zPackaging specifications
IMX9
Part No.
T110
3000
Packaging type
Code
Basic ordering unit (pieces)
Taping
z
zz
zElectrical characteristic curves
0
0.4
0.8
1.2
1.6
2.0
0 0.1 0.2 0.3 0.4 0.5
Ta=25°C
0.2µA
0.4µA
0.6µA
0.8µA
1.0µA
1.2µA
1.4µA
1.6µA
I
B
=0
1.8µA
2.0µA
COLLECTOR CURRENT : I
C (mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE (V)
Fig.1 Grounded emitter output
characteristics(Ι)
0
200
400
600
800
1000
0246810
Ta=25°C
Measured using
pulse current.
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA 2.0mA
I
B
=0mA
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (ΙΙ)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
2
5
10
20
50
100
200
500
1000
COLLECTOR CURRENT : IC
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.3 Grounded emitter propagation
characteristics
V
CE
=3V
Measured using
pulse current.
25°C
−25°C
Ta=100°C
1 2 5 10 20 50 100 200 5001000
10
20
50
100
200
500
1000
2000
5000
10000 Ta=25°C
Measured using
pulse current.
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current (Ι)
3V
V
CE
=5V
1V
1 2 5 10 20 50 100 200 500 1000
10000
5000
2000
1000
500
200
100
50
20
10
V
CE
=
3V
Measured using
pulse current.
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current (ΙΙ)
25°C
−25°C
Ta=100°C
1
2
2000
1000
200
500
100
20
50
10
5
2 5 10 20 50 100 200 500 1000
Ta=25°C
Measured using
pulse current.
10
25
50
IC/IB
=
100
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (Ι)
IMX9
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat) (mV)
COLLECTOR CURRENT : I
C (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
1
2
2000
1000
200
500
100
20
50
10
5
2 5 10 20 50 100 200 5001000
I
C
/
I
B
=
25
Measured using
pulse current.
Ta=100°C
25°C
−25°C
BASE SATURATION VOLTAGE : V
BE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.8 Base-emitter saturation
voltage vs. collector current (Ι)
1 2 5 10 20 50 100 200 500 1000
10000
5000
2000
1000
500
200
100
50
20
10
Ta=25°C
Pulsed
I
C
/I
B
=10
25
50
100
1 2 5 10 20 50 100 200 5001000
10000
5000
2000
1000
500
200
100
50
20
10
BASE SATURATION VOLTAGE : VBE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current (ΙΙ)
Measured using
pulse current.
lC/lB=10
25°C
100°C
Ta=−25°C
EMITTER CURRENT : IE
(mA)
TRANSITION FREQUENCY : fT
(MHz)
Fig.10 Gain bandwidth product vs.
emitter current
−1−2−5−10 −20 −50−100−200 −500−1000
10000
5000
2000
500
200
1000
100
20
50
10
Ta=25°C
VCE
=10V
Measured using
pulse current.
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.11 Collector output capacitance
vs. collector-base voltage
100
200
500
1000
10
20
50
2
5
1
Ta=25°C
f=1MHz
I
E
=0A
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
ON RESISTANCE : Ron (Ω)
BASE CURRENT : I
B
(mA)
Fig.12 Output-on resistance vs.
base current
0.1
0.2
0.5
1
2
5
10
20
50
100 Ta=25°C
f=1kHz
Vi=100mV(
rms)
R
L
=1kΩ
z
zz
zRon measurement circuit
Ron= ×R
L
V
0
Vi-V
0
R
L
=1kΩ
I
B
Output
V
0
Input
Vi
1kHz
100mV(rms)
V
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
