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PD - 91517

IRF2807
HEXFET® Power MOSFET
l
l
l
l
l
l

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

D

VDSS = 75V
RDS(on) = 13mΩ

G

ID = 82A‡

S

Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG

Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew

Max.
82‡

Units

58
280
230
1.5
± 20
43
23
5.9
-55 to + 175

A
W
W/°C
V
A
mJ
V/ns
°C

300 (1.6mm from case )
10 lbf•in (1.1N•m)

Thermal Resistance
Parameter
RθJC
RθCS
RθJA

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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

–––
0.50
–––

0.65
–––
62

°C/W

1
3/16/01

IRF2807
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

RDS(on)
VGS(th)
gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

Qg
Qgs
Qgd
td(on)
tr
td(off)
tf

Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
75
–––
–––
2.0
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––

Typ.
–––
0.074
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
64
49
48

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

–––

4.5

LS

Internal Source Inductance

–––

7.5

Ciss
Coss
Crss
EAS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy‚

––– 3820
––– 610
––– 130
––– 1280

V(BR)DSS
∆V(BR)DSS/∆TJ

IGSS

Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
13
mΩ VGS = 10V, ID = 43A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 43A„
25
VDS = 75V, VGS = 0V
µA
250
VDS = 60V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
160
ID = 43A
29
nC
VDS = 60V
55
VGS = 10V, See Fig. 6 and 13
–––
VDD = 38V
–––
ID = 43A
ns
–––
RG = 2.5Ω
–––
VGS = 10V, See Fig. 10 „
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
340† mJ IAS = 50A, L = 370µH

D

S

Source-Drain Ratings and Characteristics
IS
ISM

VSD
trr
Qrr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
––– ––– 82‡
showing the
A
G
integral reverse
––– ––– 280
S
p-n junction diode.
––– ––– 1.2
V
TJ = 25°C, IS = 43A, VGS = 0V „
––– 100 150
ns
TJ = 25°C, IF = 43A
––– 410 610
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)

‚ Starting TJ = 25°C, L = 370µH
RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12)

ƒ ISD ≤ 43A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C

2

„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.

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IRF2807
1000

1000

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

TOP

100

100

4.5V
20µs PULSE WIDTH
TJ = 25 °C

10
0.1

1

10

4.5V

100

Fig 1. Typical Output Characteristics

RDS(on) , Drain-to-Source On Resistance
(Normalized)

I D , Drain-to-Source Current (A)

3.0

TJ = 25 ° C
TJ = 175 ° C

100

V DS = 25V
20µs PULSE WIDTH
5.0

6.0

7.0

8.0

Fig 3. Typical Transfer Characteristics

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10

100

Fig 2. Typical Output Characteristics

1000

VGS , Gate-to-Source Voltage (V)

1

VDS , Drain-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

10
4.0

20µs PULSE WIDTH
TJ = 175 °C

10
0.1

9.0

ID = 71A

2.5

2.0

1.5

1.0

0.5

0.0
-60 -40 -20

VGS = 10V
0

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature ( °C)

Fig 4. Normalized On-Resistance
Vs. Temperature

3

IRF2807
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd

C, Capacitance(pF)

6000

Coss = Cds + Cgd

5000

Ciss

4000
3000

Coss
2000

Crss

1000

VGS , Gate-to-Source Voltage (V)

20

7000

0

ID = 43A
VDS = 60V
VDS = 37V
VDS = 15V

16

12

8

4

FOR TEST CIRCUIT
SEE FIGURE 13

0
1

10

0

100

VDS , Drain-to-Source Voltage (V)

1000

120

160

1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)

ID , Drain-to-Source Current (A)

ISD , Reverse Drain Current (A)

80

Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage

100

TJ = 175 ° C

100

10

TJ = 25 ° C
1

0.1
0.0

V GS = 0 V
0.4

0.8

1.2

1.6

2.0

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode
Forward Voltage

4

40

Q G , Total Gate Charge (nC)

2.4

100µsec

10

1msec

Tc = 25°C
Tj = 175°C
Single Pulse

1
1

10msec
10

100

1000

VDS , Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

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IRF2807
100

VDS

LIMITED BY PACKAGE

VGS

I D , Drain Current (A)

80

RD

D.U.T.

RG

+

-VDD

60

VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

40

Fig 10a. Switching Time Test Circuit
20

VDS
90%
0
25

50

75

100

125

TC , Case Temperature

150

175

( °C)
10%
VGS

Fig 9. Maximum Drain Current Vs.
Case Temperature

td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC )

1

D = 0.50

0.20
0.1
0.10
P DM
0.05
0.02
0.01

t1

SINGLE PULSE
(THERMAL RESPONSE)

t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC

0.01
0.00001

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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5

IRF2807

L

VD S

D .U .T

RG

IA S
2V0GS
V

tp

D R IV E R

+
- VD D

A

0 .0 1 Ω

Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp

EAS , Single Pulse Avalanche Energy (mJ)

600
1 5V

ID
18A
30A
43A

TOP
500

BOTTOM

400

300

200

100

0
25

50

75

100

125

150

175

Starting TJ , Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS

Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.

50KΩ

QG

12V

.2µF
.3µF

VGS
QGS

D.U.T.

QGD

+
V
- DS

VGS

VG

3mA

IG

Charge

Fig 13a. Basic Gate Charge Waveform

6

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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IRF2807
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T*

ƒ

Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

+

‚
-

-

„

+


• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

RG
VGS

*

+
-

VDD

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive
P.W.

D=

Period

P.W.
Period

[VGS=10V ] ***

D.U.T. ISD Waveform
Reverse
Recovery
Current

Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

[VDD]

Forward Drop

Inductor Curent
Ripple ≤ 5%

[ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs

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7

IRF2807
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10 .54 (.4 15)
10 .29 (.4 05)

2.87 (.11 3)
2.62 (.10 3)

3 .7 8 (.149 )
3 .5 4 (.139 )
-A -

-B 4.69 ( .18 5 )
4.20 ( .16 5 )

1 .32 (.05 2)
1 .22 (.04 8)

6.47 (.25 5)
6.10 (.24 0)

4
1 5.24 (.60 0)
1 4.84 (.58 4)

1.15 (.04 5)
M IN
1

2

1 4.09 (.55 5)
1 3.47 (.53 0)

4.06 (.16 0)
3.55 (.14 0)

3X
3X

L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN

3

1 .4 0 (.0 55 )
1 .1 5 (.0 45 )

0.93 (.03 7)
0.69 (.02 7)

0 .3 6 (.01 4)

3X
M

B A M

0.55 (.02 2)
0.46 (.01 8)

2 .92 (.11 5)
2 .64 (.10 4)

2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H

3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M

A

IN TE R N A TIO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CO DE

PART NU MBER
IR F 10 1 0
9246
9B
1M

D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK

Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01

8

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Source Exif Data:

File Type                       : PDF
File Type Extension             : pdf
MIME Type                       : application/pdf
PDF Version                     : 1.6
Linearized                      : No
XMP Toolkit                     : Adobe XMP Core 4.0-c316 44.253921, Sun Oct 01 2006 17:14:39
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Create Date                     : 2001:03:16 11:11:00Z
Creator Tool                    : PageMaker 6.5
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Document ID                     : uuid:bfcbe114-225e-4131-b4e3-50dc0284de6b
Instance ID                     : uuid:1eb047d1-5904-4bee-8d78-55f7db283067
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