IRLML6402PbF Datasheet. Www.s Manuals.com. Irf

User Manual: Marking of electronic components, SMD Codes E*, E****. Datasheets BAT54, IRLML6402, IRLML6402PbF, NUP4103FC.

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Page Count: 10

Parameter Typ. Max. Units

RθJA Maximum Junction-to-Ambient75 100 °C/W

HEXFET® Power MOSFET

These P-Channel MOSFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized

device design that HEXFET® power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device for use in battery

and load management.

A thermally enhanced large pad leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power MOSFET with the

industry's smallest footprint. This package, dubbed the Micro3™, is ideal

for applications where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin

application environments such as portable electronics and PCMCIA

cards. The thermal resistance and power dissipation are the best available.

Thermal Resistance

VDSS = -20V

RDS(on) = 0.065Ω

lUltra Low On-Resistance

lP-Channel MOSFET

lSOT-23 Footprint

lLow Profile (<1.1mm)

lAvailable in Tape and Reel

lFast Switching

lLead-Free

lRoHS Compliant, Halogen-Free

Description

Parameter Max. Units

VDS Drain- Source Voltage -20 V

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.7

ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.2 A

IDM Pulsed Drain Current -22

PD @TA = 25°C Power Dissipation 1.3

PD @TA = 70°C Power Dissipation 0.8

Linear Derating Factor 0.01 W/°C

EAS Single Pulse Avalanche Energy11 mJ

VGS Gate-to-Source Voltage ± 12 V

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Absolute Maximum Ratings

Micro3™

IRLML6402PbF

Form Quantity

IRLML6402TRPbF Micro3

™

(SOT-23) Tape and Reel 3000 IRLML6402TRPbF

Package Type

Standard Pack

Orderable Part NumberBase Part Number

IRLML6402PbF

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) ––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V 

trr Reverse Recovery Time ––– 29 43 ns TJ = 25°C, IF = -1.0A

Qrr Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/μs 

 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

-1.3

-22

** For recommended footprint and soldering techniques refer to application note #AN-994.

 Surface mounted on 1" square single layer 1oz. copper FR4 board,

steady state.

 Starting TJ = 25°C, L = 1.65mH

RG = 25Ω, IAS = -3.7A.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA

ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA 

––– 0.050 0.065 VGS = -4.5V, ID = -3.7A 

––– 0.080 0.135 VGS = -2.5V, ID = -3.1A 

VGS(th) Gate Threshold Voltage -0.40 -0.55 -1.2 V VDS = VGS, ID = -250μA

gfs Forward Transconductance 6.0 ––– ––– S VDS = -10V, ID = -3.7A 

––– ––– -1.0 VDS = -20V, VGS = 0V

––– ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

QgTotal Gate Charge ––– 8.0 12 ID = -3.7A

Qgs Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V

Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -5.0V 

td(on) Turn-On Delay Time ––– 350 ––– VDD = -10V

trRise Time ––– 48 ––– ID = -3.7A

td(off) Turn-Off Delay Time ––– 588 ––– RG = 89Ω

tfFall Time ––– 381 ––– RD = 2.7Ω

Ciss Input Capacitance ––– 633 ––– VGS = 0V

Coss Output Capacitance ––– 145 ––– pF VDS = -10V

Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

IRLML6402PbF

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

0.1 1 10 100

20μs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-2.25V

100

0.1 1 10 100

20μs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-2.25V

100

2.0 3.0 4.0 5.0 6.0 7.0 8.0

V = -15V

20μs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-4.5V

-3.7A

IRLML6402PbF

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

100

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

= 150 C

= 25 C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)

10us

100us

1ms

10ms

110 100

VDS, Drain-to-Source Voltage (V)

200

400

600

800

1000

C, Capacitance(pF)

Coss

Crss

Ciss

VGS

= 0V, f = 1 MHZ

Ciss

= C

+ C

gd, C

SHORTED

Crss

= C

Coss

= C

+ C

036912

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

-3.7A

V =-10V

0.1

100

0.2 0.4 0.6 0.8 1.0 1.2

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

IRLML6402PbF

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

25 50 75 100 125 150

0.0

1.0

2.0

3.0

4.0

T , Case Temperature ( C)

-I , Drain Current (A)

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-1.7A

-3.0A

-3.7A

0.1

100

1000

0.00001 0.0001 0.001 0.01 0.1 1 10

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRLML6402PbF

Fig 13. Typical On-Resistance Vs.

Drain Current

Fig 12. Typical On-Resistance Vs.

Gate Voltage

2.0 3.0 4.0 5.0 6.0 7.0

-VGS, Gate -to -Source Voltage ( V )

0.02

0.04

0.06

0.08

0.10

0.12

0.14

RDS(on) , Drain-to -Source Voltage ( Ω )

Id = -3.7A

0 5 10 15 20 25 30

-ID , Drain Current ( A )

0.00

0.04

0.08

0.12

0.16

0.20

RDS ( on ) , Drain-to-Source On Resistance ( Ω )

VGS = -4.5V

VGS = -2.5V

IRLML6402PbF

Micro3 (SOT-23 / TO-236AB) Part Marking Information

Micro3 (SOT-23) (Lead-Free) Package Outline

Dimensions are shown in millimeters (inches)

0.08

0.88

0.01

0.89

0.95 B S C

MI L L IME T E R S

MIN

MI NMAX MAX

.036

.0375 B S C

DIME NS IONS

INCHE S

b0.30

bbb

0.15

.008

ccc .006

0.25 BS CL1

L 0.40 0.60

.0118 B S C

aaa

0.20

.004

0° 8° 8°0°

2.80

1.20

12 ccc C B A

bbb C A B

3X b aaa C

3 S URF 0

3X L

2.10

e1 1.90 B S C .075 B S C

.0119

.0032

.111

.083

.048 .055

.119

.103

.0196

.0078

.0039

.044

.0004

.035 .040

.0236.0158

1.02

0.20

0.50

2.64

3.04

1.40

1.12

0.10

1.90

[.075]

0.95

[.0375]

0.972

[.038]

2.742

[.1079]

0.802

[.031]

R E COMME NDE D F OOT PR INT

NOT ES

1. DIMENS IONING AND T OL ERANCING PE R ASME Y14. 5M-1994.

4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.

5 D AT U M A AND B T O B E DE T E RMI N E D AT DAT U M P L AN E H .

6 D I ME NS I ON S D AND E 1 AR E ME AS UR E D AT DAT U M P L ANE H .

2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.

3. CONTROLL ING DIMENSION: MILLIMET ER.

7 DIMENSION L IS T HE LEAD LENGTH FOR SOLDERING TO A S UBST RATE.

8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB.

F = IRLML6401

A2001 A27

Notes: This part marking information applies to devices produced after 02/26/2001

ASSEMBLY LOT CODE

LEAD-FREE

DATE CODE

E = IRLML6402

X = PART NUMBER CODE REFERENCE:

D = IRLML5103

C = IRLML6302

B = IRLML2803

A = IRLML2402

W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

W = (27-52) IF PRECEDED BY A LETTER

82008

32003

12001

YEAR

2002 2

52005

2004 4

2007

2006

2010 0

2009 9

YEAR Y

C03

WORK

WEEK

04 D

WORK

WEEK W

H = IRLML5203

G = IRLML2502

2006

2003

2002

2005

2004

2008

2007

2010

2009 J

Y51

50 X

I = IRLML0030

J = IRLML2030

L = IRLML0060

M = IRLML0040

K = IRLML0100

N = IRLML2060

P = IRLML9301

R = IRLML9303

Cu WIRE

HALOGEN FREE

PART NUMBER

52 Z

DATE CODE EXAMPLE:

YWW = 432 = DF

YWW = 503 = 5C

2018

2013

2011

2012

2015

2014

2017

2016

2020

2019

2018

2013

2011

2012

2015

2014

2017

2016

2020

2019

W = IRFML8244

V = IRLML6346

U = IRLML6344

T = IRLML6246

S = IRLML6244

Y = IRLML2246

X = IRLML2244

Z = IRFML9244

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

IRLML6402PbF

Micro3™(SOT-23/TO-263AB) Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 )

1.95 ( .077 )

FEED DIRECTION

4.1 ( .161 )

3.9 ( .154 )

1.6 ( .062 )

1.5 ( .060 ) 1.85 ( .072 )

1.65 ( .065 )

3.55 ( .139 )

3.45 ( .136 )

1.1 ( .043 )

0.9 ( .036 )

4.1 ( .161 )

3.9 ( .154 ) 0.35 ( .013 )

0.25 ( .010 )

8.3 ( .326 )

7.9 ( .312 )

1.32 ( .051 )

1.12 ( .045 )

9.90 ( .390 )

8.40 ( .331 )

178.00

( 7.008 )

MAX.

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

IRLML6402PbF

MS L 1

(per J E DE C

J-S TD-020D

††

)

RoHS compliant

Yes

Qualification information

†

Qualification level

Cons umer

(per JEDEC JES D47F

††

guidelines)

Moisture Sensitivity Level Micro3™ (SOT-23)

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

Revision History

Date Comment

•

Updated data sheet with new IR corporate template.

• Updated package outline & part marking on page 7.

•

Added Qualification table -Qual level "Consumer" on page 9.

• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.

4/28/2014

www.s-manuals.com

IRLML6402PbF Datasheet. Www.s Manuals.com. Irf

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