J270, J271, SST270, SST271 Datasheet. Www.s Manuals.com. Vishay

User Manual: Marking of electronic components, SMD Codes S1, S1*, S15**, S15B, S16**, S17**, S18, S18**, S19**, S19B, S1G, s1A, s1P. Datasheets 1N4148WS, BBY31, LM2760M5, LM2765M6, LM3500TL-16, LR1120G-18-AF5-A-R, LR1120G-18-AL5-A-R, MMBT2222A, MMBT3904, R1162N151B, R1162N161B, R1162N171B, R1162N181B, R1162N191B, SD101AWS, SDS511Q, SI2301, SMBT2222A, SMBT3904, SMBT3904S, SMBT3904U, SST271, TS391G-AF5, TS391G-AL5.

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J/SST270 Series
Vishay Siliconix

P-Channel JFETs
J270
J271

SST270
SST271

PRODUCT SUMMARY
Part Number

VGS(off) (V)

V(BR)GSS Min (V)

gfs Min (mS)

IDSS Min (mA)

J/SST270

0.5 to 2.0

30

6

–2

J/SST271

1.5 to 4.5

30

8

–6

FEATURES

BENEFITS

APPLICATIONS

D
D
D
D

D Full Performance from Low-Voltage Power
Supply: Down to 2 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality, Low-Level Signal Amplification

D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage Battery
Amplifiers
D Ultrahigh Input Impedance Pre-Amplifiers
D High-Side Switching

Low Cutoff Voltage: J270 <2 V
High Input Impedance
Very Low Noise
High Gain

DESCRIPTION
The J/SST270 series consists of all-purpose amplifiers for
designs requiring p-channel operation.

provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).

The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package

TO-226AA
(TO-92)
D

1

G

2

S

TO-236
(SOT-23)

D

1

S

2

3

G

3
Top View
Top View
J270
J271

SST270 (S0)*
SST271 (S1)*
*Marking Code for TO-236

ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70258
S-04233—Rev. D, 02-Jul-01

Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
www.vishay.com

8-1

J/SST270 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST270

Parameter

Test Conditions

Typa

V(BR)GSS

IG = 1 mA , VDS = 0 V

45

VGS(off)

VDS = –15 V, ID = –1 nA

IDSS

VDS = –15 V, VGS = 0 V

Symbol

Min

J/SST271

Max

Min

Max

Unit

0.5

2.0

1.5

4.5

–2

–15

–6

–50

mA

200

pA

Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb

VGS = 20 V, VDS = 0 V
Gate Reverse Current

IGSS

Gate Operating Current

30

10

30

200

V

5

TA = 125_C

IG

VDG = –15 V, ID = –1 mA

10

Drain Cutoff Current

ID(off)

VDS = –15 V, VGS = 10 V

–10

Gate-Source Forward Voltage

VGS(F)

IG = –1 mA , VDS = 0 V

–0.7

nA
pA
V

Dynamic
Common-Source Forward Transconductance

gfs

Common-Source Output Conductance

gos

Common-Source Input Capacitance

Ciss

6

VDS = –15 V, VGS = 0 V
f = 1 kHz

15

8

200

18

mS

500

mS

20

Common-Source
Reverse Transfer Capacitance

Crss

VDS = –15 V, VGS = 0 V
f = 1 MHz

Equivalent Input Noise Voltage

en

VDG = –10 V, VGS = 0 V
f = 1 kHz

pF

4

nV⁄
√Hz

20

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.

PSCIA

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage

Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
–100

250

rDS
–60

120

–40

80

–20

40
rDS @ ID = –1 mA, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V

0
0

2

4

6

8

VGS(off) – Gate-Source Cutoff Voltage (V)

www.vishay.com

10

gfs – Forward Transconductance (mS)

–80

15

200
gfs

12

150

gos

9

100

6

50

gos – Output Conductance (µS)

160

0

8-2

18

IDSS
IDSS – Saturation Drain Current (mA)

rDS(on) – Drain-Source On-Resistance ( Ω )

200

gfs and gos @ VDS = –15 V
VGS = 0 V, f = 1 kHz
3
0

2

4

6

8

0
10

VGS(off) – Gate-Source Cutoff Voltage (V)

Document Number: 70258
S-04233—Rev. D, 02-Jul-01

J/SST270 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics

Output Characteristics
–2

–2
VGS = 0 V

0.2 V
–1.6
I D – Drain Current (mA)

I D – Drain Current (mA)

–1.6

1.0 V

VGS = 0 V
0.4 V
0.6 V

–1.2

–0.8
0.8 V

1.5 V

0.5 V

–1.2
2.0 V
–0.8

–0.4

–0.4
VGS(off) = 1.5 V

VGS(off) = 3 V
0

0
0

–0.2

–0.4

–0.6

–0.8

0

–1

–0.1

–0.2

–0.3

–0.4

–0.5

VDS – Drain-Source Voltage (V)

VDS – Drain-Source Voltage (V)

Output Characteristics

Capacitance vs. Gate-Source Voltage

–25
30
VGS(off) = 3 V

VDS = 0 V
f = 1 MHz

VGS = 0 V
24
0.5 V

Capacitance (pF)

I D – Drain Current (mA)

–20

–15
1.0 V
–10
1.5 V

18

Ciss

12
Crss

–5
6

2.0 V
0
0

–4

–8

–12

–16

0

–20

0

VDS – Drain-Source Voltage (V)

4

Transfer Characteristics

12

16

20

Transfer Characteristics

–10

–40
VGS(off) = 1.5 V

VDS = –15 V

VGS(off) = 3 V

VDS = –15 V

–32
I D – Drain Current (mA)

–8
I D – Drain Current (mA)

8

VGS – Gate-Source Voltage (V)

TA = –55_C

–6

25_C
–4
125_C
–2

TA = –55_C

–24

25_C
–16

–8
125_C

0

0
0

0.2

0.4

0.6

VGS – Gate-Source Voltage (V)

Document Number: 70258
S-04233—Rev. D, 02-Jul-01

0.8

1.0

0

1

2

3

4

5

VGS – Gate-Source Voltage (V)

www.vishay.com

8-3

J/SST270 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Drain Current

Output Conductance vs. Drain Current

100

100
VGS(off) = 3 V

VDS = –15 V
f = kHz
gos – Output Conductance (µS)

gfs – Forward Transconductance (mS)

VGS(off) = 3 V

TA = –55_C
10

25_C

125_C

1

TA = –55_C
125_C
10

25_C

VDS = –15 V
f = kHz
1

–0.1

–1

–10

–0.1

–1

ID – Drain Current (mA)

–10

ID – Drain Current (mA)

On-Resistance vs. Temperature

TA = 25_C
200

rDS(on) – Drain-Source On-Resistance ( Ω )

rDS(on) – Drain-Source On-Resistance ( Ω )

300

On-Resistance vs. Drain Current

250

VGS(off) = 1.5 V

150
3V
100
5V
50

0

ID = –1 mA
rDS changes X 0.7%/_C
240

180

VGS(off) = 1.5 V
3V

120

5V

60

0
–55

–1

–10

–35

–15

5

–100

25

45

65

85

105

125

TA – Temperature (_C)

ID – Drain Current (mA)

Noise Voltage vs. Frequency

Gate Leakage Current

100 nA

100

10 nA

–1 mA

I G – Gate Leakage

en – Noise Voltage nV /

Hz

ID = –0.1 mA

–1 mA
10

TA = 125_C

1 nA

IGSS @ 125_C
100 pA
–10 mA
10 pA

TA = 25_C
IGSS @ 25_C

1 pA
–1 mA

VDS = –10 V
0.1 pA

1
10

100

1k
f – Frequency (Hz)

www.vishay.com

8-4

ID = –10 mA

10 k

100 k

0

–10

–20

–30

–40

–50

VDG – Drain-Gate Voltage (V)

Document Number: 70258
S-04233—Rev. D, 02-Jul-01

www.s-manuals.com



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Title                           : J270, J271, SST270, SST271 - Datasheet. www.s-manuals.com.
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Subject                         : J270, J271, SST270, SST271 - Datasheet. www.s-manuals.com.
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Keywords                        : J270, J271, SST270, SST271 - Datasheet. www.s-manuals.com.

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