J270, J271, SST270, SST271 Datasheet. Www.s Manuals.com. Vishay

User Manual: Marking of electronic components, SMD Codes S1, S1*, S15**, S15B, S16**, S17**, S18, S18**, S19**, S19B, S1G, s1A, s1P. Datasheets 1N4148WS, BBY31, LM2760M5, LM2765M6, LM3500TL-16, LR1120G-18-AF5-A-R, LR1120G-18-AL5-A-R, MMBT2222A, MMBT3904, R1162N151B, R1162N161B, R1162N171B, R1162N181B, R1162N191B, SD101AWS, SDS511Q, SI2301, SMBT2222A, SMBT3904, SMBT3904S, SMBT3904U, SST271, TS391G-AF5, TS391G-AL5.

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J/SST270 Series

Vishay Siliconix

Document Number: 70258

S-04233—Rev. D, 02-Jul-01 www.vishay.com

8-1

P-Channel JFETs

J270 SST270

J271 SST271

PRODUCT SUMMARY

Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)

J/SST270 0.5 to 2.0 30 6 –2

J/SST271 1.5 to 4.5 30 8 –6

FEATURES BENEFITS APPLICATIONS

DLow Cutoff Voltage: J270 <2 V

DHigh Input Impedance

DVery Low Noise

DHigh Gain

DFull Performance from Low-Voltage Power

Supply: Down to 2 V

DLow Signal Loss/System Error

DHigh System Sensitivity

DHigh-Quality, Low-Level Signal Amplification

DHigh-Gain, Low-Noise Amplifiers

DLow-Current, Low-Voltage Battery

Amplifiers

DUltrahigh Input Impedance Pre-Amplifiers

DHigh-Side Switching

DESCRIPTION

The J/SST270 series consists of all-purpose amplifiers for

designs requiring p-channel operation.

The TO-226AA (TO-92) plastic package provides a low-cost

option, while the TO-236 (SOT-23) package

provides surface-mount capability. Both the J and SST series

are available in tape-and-reel for automated assembly (see

Packaging Information).

D

S

G

TO-236

(SOT-23)

Top View

2

3

1

TO-226AA

(TO-92)

Top View

D

S

G

1

2

3

*Marking Code for TO-236

SST270 (S0)*

SST271 (S1)*

J270

J271

ABSOLUTE MAXIMUM RATINGS

Gate-Drain Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate-Source Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .

Power Dissipationa350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Notes

a. Derate 2.8 mW/_C above 25_C

J/SST270 Series

Vishay Siliconix

www.vishay.com

8-2 Document Number: 70258

S-04233—Rev. D, 02-Jul-01

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

J/SST270 J/SST271

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

Static

Gate-Source Breakdown Voltage V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 30

Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –1 nA 0.5 2.0 1.5 4.5 V

Saturation Drain CurrentbIDSS VDS = –15 V, VGS = 0 V –2–15 –6–50 mA

VGS = 20 V, VDS = 0 V 10 200 200 pA

Gate Reverse Current IGSS TA = 125_C5 nA

Gate Operating Current IGVDG = –15 V, ID = –1 mA 10

Drain Cutoff Current ID(off) VDS = –15 V, VGS = 10 V –10 pA

Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 V

Dynamic

Common-Source Forward Transconductance gfs VDS = –15 V, VGS = 0 V 6 15 8 18 mS

Common-Source Output Conductance gos

VDS = –15 V, VGS = 0 V

f = 1 kHz 200 500 mS

Common-Source Input Capacitance Ciss 20

Common-Source

Reverse Transfer Capacitance Crss

VDS = –15 V, VGS = 0 V

f = 1 MHz 4pF

Equivalent Input Noise Voltage enVDG = –10 V, VGS = 0 V

f = 1 kHz 20 nV⁄

√Hz

Notes

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIA

b. Pulse test: PW v300 ms duty cycle v3%.

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

200

0681042

160

0

–100

–80

–60

–40

–20

0

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage

VGS(off) – Gate-Source Cutoff Voltage (V)

rDS @ ID = –1 mA, VGS = 0 V

IDSS @ VDS = –15 V, VGS = 0 V

IDSS

rDS

120

80

40

18

0

15

12

9

6

3

68102

250

200

150

100

50

0

Forward Transconductance and Output Conductance

vs. Gate-Source Cutoff Voltage

VGS(off) – Gate-Source Cutoff Voltage (V)

gfs and gos @ VDS = –15 V

VGS = 0 V, f = 1 kHz

gfs

gos

4

rDS(on) – Drain-Source On-Resistance ( Ω )

IDSS – Saturation Drain Current (mA)

gos – Output Conductance (µS)

gfs – Forward Transconductance (mS)

J/SST270 Series

Vishay Siliconix

Document Number: 70258

S-04233—Rev. D, 02-Jul-01 www.vishay.com

8-3

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

2.0 V

Output Characteristics

– Drain Current (mA)

ID

VDS – Drain-Source Voltage (V)

0.6 V

0.8 V

–2

0–0.6 –0.8 –1

–1.6

–1.2

–0.8

–0.4

0

–0.4–0.2

VGS(off) = 1.5 V

VGS = 0 V

0.4 V

Output Characteristics

– Drain Current (mA)

ID

VDS – Drain-Source Voltage (V)

1.0 V

1.5 V

2.0 V

–2

0–0.3 –0.4 –0.5

–1.6

–1.2

–0.8

–0.4

0

–0.2–0.1

VGS(off) = 3 V

VGS = 0 V

Output Characteristics

– Drain Current (mA)

ID

VDS – Drain-Source Voltage (V)

1.5 V

0.5 V

–25

0–12 –16 –20

–20

–15

–10

–5

0

–8–4

VGS(off) = 3 V VGS = 0 V

1.0 V

0

0 0.2 0.4 0.6 0.8 1.0

–2

–4

–6

–8

–10

VGS – Gate-Source Voltage (V)

TA = –55_C

125_C

– Drain Current (mA)

ID

Transfer Characteristics

0

012345

–8

–16

–24

–32

–40 Transfer Characteristics

TA = –55_C

125_C

VGS – Gate-Source Voltage (V)

– Drain Current (mA)

ID

Capacitance vs. Gate-Source Voltage

Capacitance (pF)

VGS – Gate-Source Voltage (V)

VDS = 0 V

f = 1 MHz

Ciss

Crss

30

01216820

24

12

6

0

18

4

0.2 V

0.5 V

25_C

VDS = –15 VVGS(off) = 1.5 V

25_C

VDS = –15 VVGS(off) = 3 V

J/SST270 Series

Vishay Siliconix

www.vishay.com

8-4 Document Number: 70258

S-04233—Rev. D, 02-Jul-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

250

200

150

100

50

0

–1–10 –100

On-Resistance vs. Drain Current

ID – Drain Current (mA)

TA = 25_C

VGS(off) = 1.5 V

3 V

5 V

300

–55 25 125

0

–15 85

On-Resistance vs. Temperature

TA – Temperature (_C)

VGS(off) = 1.5 V

3 V

5 V

ID = –1 mA

rDS changes X 0.7%/_C

240

180

120

60

–35 5 45 65 105

Gate Leakage Current

VDG – Drain-Gate Voltage (V)

TA = 125_C

TA = 25_C

–10 mA

10 nA

100 pA

100 nA

1 nA

– Gate Leakage

IG

10 pA

1 pA

0.1 pA

0–40–20–10 –50

–30

IGSS @ 125_C

IGSS @ 25_C

ID = –10 mA

10 100 1 k 100 k10 k

100

10

1

Noise Voltage vs. Frequency

f – Frequency (Hz)

VDS = –10 V

ID = –0.1 mA

–1 mA

Transconductance vs. Drain Current Output Conductance vs. Drain Current

–0.1 –1–10

100

10

1

TA = –55_C

125_C

ID – Drain Current (mA) ID – Drain Current (mA)

–0.1 –1–10

100

10

1

TA = –55_C

125_C

25_C

VDS = –15 V

f = kHz

VGS(off) = 3 V VGS(off) = 3 V

VDS = –15 V

f = kHz

25_C

–1 mA

–1 mA

gfs – Forward Transconductance (mS)

gos – Output Conductance (µS)

rDS(on) – Drain-Source On-Resistance ( Ω )

rDS(on) – Drain-Source On-Resistance ( Ω )

en – Noise Voltage nV / Hz

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