JPAD5, JPAD50, PAD1, PAD5, PAD50, SSTPAD5, SSTPAD100 Datasheet. Www.s Manuals.com. Jpad5 Jpad50 Pad1 Pad5 Pad50 Sstpad5 Siliconix

User Manual: Marking of electronic components, SMD Codes 01, 01**, 010*, 014N03LS, 014N03MS, 016N03LS, 016N03MS, 016N04LS, 016b*, 017**, 017N04NS, 018N04LS, 019N02KS, 019N04NS. Datasheets BSC014N03LS G, BSC014N03MS G, BSC016N03LS G, BSC016N03MS G, BSC016N04LS G, BSC017N04NS G, BSC018N04LS G, BSC019N02KS G, BSC019N04NS G, EC49016X-F, FDG6301N, MT2301, SE9017, SSTPAD100, STP7401S32RG.

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PAD/JPAD/SSTPAD Series
Low-Leakage Pico-Amp Diodes
PAD1
PAD5
PAD50

JPAD5
JPAD50

SSTPAD5
SSTPAD100

Product Summary
Part Number

IR Max (pA)

PAD1

–1

PAD5/JPAD5/SSTPAD5

–5

PAD50/JPAD50

–50

SSTPAD100

–100

Features

Benefits

Applications


 Negligible Circuit Leakage Contribution

 Ultralow Leakage: PAD1 <1 pA

 Ultralow Capacitance: PAD1 <0.8 pF 
 Circuit “Transparent” Except to Shunt
High-Frequency Spikes

 Two-Leaded Package

 Simplicity of Operation


 Op Amp Input Protection

 Multiplexer Overvoltage
Protection

Description
The PAD/JPAD/SSTPAD series of extremely low-leakage
diodes provides a superior alternative to conventional diode
technology when reverse current (leakage) must be
minimized. They feature leakage currents ranging from
–1 pA (PAD1) to –100 pA (SSTPAD100) to support a wide
range of applications. These devices are well suited for use
in applications such as input protection for operational
amplifiers.
TO-206AF (TO-72)
Modified

TO-206AA (TO-18)
Modified

Case

C

TO-226AA (TO-92)
Modified

C
C

3

1

The hermetically sealed TO-206AF (TO-72) package
allows full military processing per MIL-S-19500 (see
Military Information). The TO-226A (TO-92) plastic
package provides a low-cost option. The TO-236
(SOT-23) package provides surface-mount capability.
Both J and SST series are available in tape-and-reel for
automated assembly. (See Packaging Information.)

1

1

TO-236
(SOT-23)

C

1
3

C
2

2
A

A
A and Case

A

2

2
Top View

Top View

Top View

Top View

PAD1
PAD5

PAD50

JPAD5
JPAD50

SSTPAD5 (05)*
SSTPAD100 (01)
*Marking Code for TO-236

Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70339.

Siliconix
S-52424—Rev. G, 14-Apr-97

1

PAD/JPAD/SSTPAD Series
Absolute Maximum Ratingsa
Forward Current:
Total Device Dissipation:
Operation Junction Temp:

(PAD . . . . . . . . . . . . . . . . . . . . . . 50 mA
(JPAD/SSTPAD ) . . . . . . . . . . . . . 10 mA
(PAD)b . . . . . . . . . . . . . . . . . . . 300 mW
(JPAD/SSTPAD)b . . . . . . . . . . 350 mW
(PAD) . . . . . . . . . . . . . . . . –55 to 175_C
(JPAD/SSTPAD )c . . . . . . –55 to 150_C

Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . 300_C
Notes:
a. TA = 25_C unless otherwise noted.
b. Derate 2 mW/_C above 25_C.
c. Derate 2.8 mW/_C above 25_C.

Specificationsa
Limits
Parameter

Symbol

Typb

Max

PAD1

–0.3

–1

PAD5/JPAD5/SSTPAD5

–1

–5

PAD50/JPAD50

–5

–50

SSTPAD100

–10

–100

Test Conditions

Min

Unit

Static

Reverse Current

IR

Reverse Breakdown Voltage

VR = –20
20 V

IR = –1 
A

BVR

Forward Voltage Drop

pA

VF

PAD1/PAD5

–45

–60

SSTPAD5/100

–30

–55

All Others

–35

–55

IF = 1 mA

V
0.8

1.5

PAD1/PAD5

0.5

0.8

All Others

1.5

2

Dynamic
Reverse Capacitance

CR

VR = –5V,
–5V f = 1 MHz

pF

Notes:
a. TA = 25_C unless otherwise noted.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

NT/NPA

Typical Characteristics
Reverse Current vs. Reverse Voltage

–1000

–100

Reverse Current vs. Temperature

PAD/JPAD/SSTPAD5
VR = –20 V
IR @ 125_C
–100

–10

I R (pA)

I R (pA)

PAD1
–10

–1

All Others
PAD1/5

PAD/JPAD/SSTPAD5
–1

–0.1
IR @ 25_C
PAD1

–0.1
0

–6

–12

–18
VR (V)

2

–24

–30

–0.01
–55 –35 –15

5

25

45

65

85

105 125

TA – Temperature (_C)

Siliconix
S-52424—Rev. G, 14-Apr-97

www.s-manuals.com



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Title                           : JPAD5, JPAD50, PAD1, PAD5, PAD50, SSTPAD5, SSTPAD100 - Datasheet. www.s-manuals.com.
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