JPAD5, JPAD50, PAD1, PAD5, PAD50, SSTPAD5, SSTPAD100 Datasheet. Www.s Manuals.com. Jpad5 Jpad50 Pad1 Pad5 Pad50 Sstpad5 Siliconix
User Manual: Marking of electronic components, SMD Codes 01, 01**, 010*, 014N03LS, 014N03MS, 016N03LS, 016N03MS, 016N04LS, 016b*, 017**, 017N04NS, 018N04LS, 019N02KS, 019N04NS. Datasheets BSC014N03LS G, BSC014N03MS G, BSC016N03LS G, BSC016N03MS G, BSC016N04LS G, BSC017N04NS G, BSC018N04LS G, BSC019N02KS G, BSC019N04NS G, EC49016X-F, FDG6301N, MT2301, SE9017, SSTPAD100, STP7401S32RG.
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PAD/JPAD/SSTPAD Series
Siliconix
S-52424—Rev. G, 14-Apr-97 1
Low-Leakage Pico-Amp Diodes
PAD1 JPAD5 SSTPAD5
PAD5 JPAD50 SSTPAD100
PAD50
Product Summary
Part Number
I Max (pA)
P
ar
t
N
um
b
er
I
R
M
ax
(
p
A)
PAD1 –1
PAD5/JPAD5/SSTPAD5 –5
PAD50/JPAD50 –50
SSTPAD100 –100
Features Benefits Applications
Ultralow Leakage: PAD1 <1 pA
Ultralow Capacitance: PAD1 <0.8 pF
Two-Leaded Package
Negligible Circuit Leakage Contribution
Circuit “Transparent” Except to Shunt
High-Frequency Spikes
Simplicity of Operation
Op Amp Input Protection
Multiplexer Overvoltage
Protection
Description
The PAD/JPAD/SSTPAD series of extremely low-leakage
diodes provides a superior alternative to conventional diode
technology when reverse current (leakage) must be
minimized. They feature leakage currents ranging from
–1 pA (PAD1) to –100 pA (SSTPAD100) to support a wide
range of applications. These devices are well suited for use
in applications such as input protection for operational
amplifiers.
The hermetically sealed TO-206AF (TO-72) package
allows full military processing per MIL-S-19500 (see
Military Information). The TO-226A (TO-92) plastic
package provides a low-cost option. The TO-236
(SOT-23) package provides surface-mount capability.
Both J and SST series are available in tape-and-reel for
automated assembly. (See Packaging Information.)
TO-206AF (TO-72)
Modified
Top View
PAD1
PAD5
A
C
13
2
Top View
PAD50
TO-226AA (TO-92)
Modified
Top View
JPAD5
JPAD50
C
A
1
2
C
C
A
TO-236
(SOT-23)
2
3
1
Top View
SSTPAD5 (05)*
SSTPAD100 (01)
Case
TO-206AA (TO-18)
Modified
A and Case
C
1
2
*Marking Code for TO-236
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70339.
PAD/JPAD/SSTPAD Series
2 Siliconix
S-52424—Rev. G, 14-Apr-97
Absolute Maximum Ratingsa
Forward Current: (PAD 50 mA. . . . . . . . . . . . . . . . . . . . . .
(JPAD/SSTPAD ) 10 mA. . . . . . . . . . . . .
Total Device Dissipation: (PAD)b300 mW. . . . . . . . . . . . . . . . . . .
(JPAD/SSTPAD)b350 mW. . . . . . . . . .
Operation Junction Temp: (PAD) –55 to 175_C. . . . . . . . . . . . . . . .
(JPAD/SSTPAD )c–55 to 150_C. . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . .
Notes:
a. TA = 25_C unless otherwise noted.
b. Derate 2 mW/_C above 25_C.
c. Derate 2.8 mW/_C above 25_C.
Specificationsa
Limits
Parameter Symbol Test Conditions Min TypbMax Unit
Static
PAD1 –0.3 –1
Reverse Current
IR
VR=20V
PAD5/JPAD5/SSTPAD5 –1 –5
pA
Reverse
Current
I
R
V
R = –
20
V
PAD50/JPAD50 –5 –50
pA
SSTPAD100 –10 –100
PAD1/PAD5 –45 –60
Reverse Breakdown Voltage BVRIR = –1 ASSTPAD5/100 –30 –55
V
All Others –35 –55
V
Forward Voltage Drop VFIF = 1 mA 0.8 1.5
Dynamic
Reverse Capacitance
CR
VR=
–
5V f = 1 MHz
PAD1/PAD5 0.5 0.8
pF
Reverse
Capacitance
CR
VR
=
–
5V
,
f
=
1
MHz
All Others 1.5 2
pF
Notes:
a. TA = 25_C unless otherwise noted. NT/NPA
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Typical Characteristics
Reverse Current vs. Reverse Voltage
0
IR @ 125_C
IR @ 25_C
Reverse Current vs. Temperature
–1000
–100
–10
–1
–0.1
–6 –12 –18 –24 –30 –55 –35 125
–100
–10
–0.01
–1
–0.1
–15 5 25 45 65 85 105
(pA)
IR
VR (V) TA – Temperature (_C)
(pA)
IR
VR = –20 V
PAD/JPAD/SSTPAD5
PAD1
PAD1
PAD/JPAD/SSTPAD5
PAD1/5
All Others
