KSB1121 Datasheet. Www.s Manuals.com. Fairchild
User Manual: Marking of electronic components, SMD Codes 11, 11 **, 110, 1101, 110G, 110L, 111, 1121, 1128, 112G, 112L, 1166, 117, 118, 118G, 118L, 11A, 11W, 11Y. Datasheets 1.5SMC11AT3, AZ1065-06Q, BZV49-C11, CMSZDA30V, DTA113ZUA, KSB1121, KTY82/110, LR9101G-10-AL4-R, LR9101G-12-AL4-R, LR9101G-18-AL4-R, LR9101L-10-AL4-R, LR9101L-12-AL4-R, LR9101L-18-AL4-R, LT1128CS8, LT1166CS8, MMBD1501, MMBT5962, PDTC143TEF, PZM11NB2A, RT8061AZQW, ZD11-AE3, ZD11-CL2, ZXLD1101.
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KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity • Fast Switching Speed • Complement to KSD1621 Marking 1 1 2 1 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Ratings Units VCBO Collector-Base Voltage Parameter -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -2 A PC P C* Collector Power Dissipation 500 1.3 mW W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C 2 * Mounted on Ceramic Board (250mm x 0.8mm) Electrical Characteristics T Symbol a= 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -30 V BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 -25 V BVEBO Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 -6 V ICBO Collector Cut-off Current VCB = -20V, IE = 0 -100 nA IEBO Emitter Cut-off Current VBE = -4V, IC = 0 -100 nA hFE1 hFE2 DC Current Gain VCE = -2V, IC = -0.1A VCE = -2V, IC = -1.5A 100 65 560 VCE (sat) Collector-Emitter Saturation Voltage IC = -1.5A, IB = -75mA -0.35 -0.6 V VBE (sat) Base-Emitter Saturation Voltage IC = -1.5A, IB = -75mA -0.85 -1.2 V ©2005 Fairchild Semiconductor Corporation KSB1121 Rev. B1 1 www.fairchildsemi.com KSB1121 PNP Epitaxial Planar Silicon Transistor July 2005 Symbol a= 25°C unless otherwise noted Parameter Test Condition fT Current Gain Bandwidth Product Min. Typ. VCE = -10V, IC = -50mA Max. Units 150 MHz Cob Output Capacitance VCB = -10V, IE = 0, f = 1MHz 32 pF tON Turn On Time * 60 ns tSTG Storage Time * 350 ns tF Fall time * VCC = -12V, VBE = -5V IB1 = -IB2 = -25mA IC= -500mA, RL = 24Ω 25 ns hFE Classification Classification R S T U hFE1 100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 1121 KSB1121 SOT-89 13” -- 4,000 KSB1121 Rev. B1 2 www.fairchildsemi.com KSB1121 PNP Epitaxial Planar Silicon Transistor Electrical Characteristics (Continued) T Figure 1. Static Characteristic Figure 2. DC Current Gain 1000 IB = -200mA IB = -100mA IB = -50mA IB = -30mA IB = -20mA VCE= -2V -1.6 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -2.0 IB = -10mA IB = -8mA -1.2 IB = -6mA -0.8 IB = -4mA IB = -2mA -0.4 0.0 0.0 IB = 0 -0.2 -0.4 -0.6 -0.8 100 10 1 -0.01 -1.0 -0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 4. Base-Emitter On Voltage -3.2 -10 VCE = -2V IC = 10 IB -2.8 IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE -10 IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage -1 -0.1 -0.01 -0.01 -0.1 -1 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 0.0 -10 -0.2 1000 IE=0 f = 1MHz 100 10 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE KSB1121 Rev. B1 -0.6 -0.8 -1.0 -1.2 Figure 6. Current Gain Bandwidth Product fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 5. Collector Output Capacitance 1 -0.1 -0.4 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Cob[pF], CAPACITANCE -1 1000 VCE = -10V 100 10 -0.1 -1 -10 IC[A], COLLECTOR CURRENT 3 www.fairchildsemi.com KSB1121 PNP Epitaxial Planar Silicon Transistor Typical Performance Characteristics KSB1121 PNP Epitaxial Planar Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters KSB1121 Rev. B1 4 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 KSB1121 Rev. B1 www.fairchildsemi.com KSB1121 PNP Epitaxial Planar Silicon Transistor TRADEMARKS www.s-manuals.com
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