KSB1121 Datasheet. Www.s Manuals.com. Fairchild
User Manual: Marking of electronic components, SMD Codes 11, 11 **, 110, 1101, 110G, 110L, 111, 1121, 1128, 112G, 112L, 1166, 117, 118, 118G, 118L, 11A, 11W, 11Y. Datasheets 1.5SMC11AT3, AZ1065-06Q, BZV49-C11, CMSZDA30V, DTA113ZUA, KSB1121, KTY82/110, LR9101G-10-AL4-R, LR9101G-12-AL4-R, LR9101G-18-AL4-R, LR9101L-10-AL4-R, LR9101L-12-AL4-R, LR9101L-18-AL4-R, LT1128CS8, LT1166CS8, MMBD1501, MMBT5962, PDTC143TEF, PZM11NB2A, RT8061AZQW, ZD11-AE3, ZD11-CL2, ZXLD1101.
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©2005 Fairchild Semiconductor Corporation
1
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KSB1121 Rev. B1
KSB1121 PNP Epitaxial Planar Silicon Transistor
July 2005
KSB1121
PNP Epitaxial Planar Silicon Transistor
High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity
• Fast Switching Speed
• Complement to KSD1621
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
* Mounted on Ceramic Board (250mm
2
x 0.8mm)
Electrical Characteristics
T
a
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage -30 V
V
CEO
Collector-Emitter Voltage -25 V
V
EBO
Emitter-Base Voltage -6 V
I
C
Collector Current -2 A
P
C
P
C
*
Collector Power Dissipation 500
1.3
mW
W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -10µA, I
E
= 0 -30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -1mA, I
B
= 0 -25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10µA, I
C
= 0 -6 V
I
CBO
Collector Cut-off Current V
CB
= -20V, I
E
= 0 -100 nA
I
EBO
Emitter Cut-off Current V
BE
= -4V, I
C
= 0 -100 nA
h
FE1
h
FE2
DC Current Gain V
CE
= -2V, I
C
= -0.1A
V
CE
= -2V, I
C
= -1.5A
100
65
560
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -1.5A, I
B
= -75mA -0.35 -0.6 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -1.5A, I
B
= -75mA -0.85 -1.2 V
SOT-89
1
1. Base 2. Collector 3. Emitter
11 21
PY WW
h
FE
grage
Year co d e
Weekly code
Marking
2
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KSB1121 Rev. B1
KSB1121 PNP Epitaxial Planar Silicon Transistor
Electrical Characteristics
(Continued)
T
a
= 25°C unless otherwise noted
hFE Classification
Package Marking and Ordering Information
Symbol Parameter Test Condition Min. Typ. Max. Units
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= -50mA 150 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
= 0, f = 1MHz 32 pF
t
ON
Turn On Time * V
CC
= -12V, V
BE
= -5V
I
B1
= -I
B2
= -25mA
I
C
= -500mA, R
L
= 24Ω
60 ns
t
STG
Storage Time * 350 ns
t
F
Fall time * 25 ns
Classification R S T U
h
FE1
100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560
Device Marking Device Package Reel Size Tape Width Quantity
1121 KSB1121 SOT-89 13” -- 4,000
3
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KSB1121 Rev. B1
KSB1121 PNP Epitaxial Planar Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
0.0 -0.2 -0.4 -0.6 -0.8 -1.0
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
I
B
= -100mA
I
B
= -2mA
I
B
= -50mA
I
B
= -10mA
I
B
= -200mA I
B
= -30mA
I
B
= -8mA
I
B
= -6mA
I
B
= -4mA
I
B
= -20mA
I
B
= 0
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.01 -0.1 -1 -10
1
10
100
1000
V
CE
= -2V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10
-0.01
-0.1
-1
-10
I
C
= 10 I
B
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
V
CE
= -2V
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
1000
I
E
=0
f = 1MHz
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
-0.1 -1 -10
10
100
1000
V
CE
= -10V
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
I
C
[A], COLLECTOR CURRENT
4
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KSB1121 Rev. B1
KSB1121 PNP Epitaxial Planar Silicon Transistor
Mechanical Dimensions
0.40 ±0.10
2.50 ±0.20 (0.50)
(0.40)
4.10 ±0.20
0.40 +0.10
–0.05
0.50 ±0.10
1.65 ±0.10
4.50 ±0.20 1.50 ±0.20
C0.2
1.50 TYP 1.50 TYP
(1.10)
SOT-89
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
5
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KSB1121 Rev. B1
KSB1121 PNP Epitaxial Planar Silicon Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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