ME2306, ME2306 G Datasheet. Www.s Manuals.com. Force Mos
User Manual: Datasheets ME2306, ME2306-G, ME2306A, ME2306A-G, ME2306D, ME2306D-G.
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N-Channel Enhancement Mode MOSFET ME2306/ME2306-G
01
Parameter Symbol Steady State Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
TA=25℃ 4.7
Continuous Drain
Current(Tj=150℃) TA=70℃ ID
3.7
Pulsed Drain Current IDM 20
A
TA=25℃ 1.32
Maximum Power Dissipation TA=70℃ PD
0.84
W
Operating Junction Temperature TJ -55 to 150 ℃
T≦10 sec 70
Thermal Resistance-Junction to Ambient* RθJA
Steady State 95
℃/W
Thermal Resistance-Junction to Case* RθJC 65
℃/W
GENERAL DESCRIPTION
The ME2306 is the N-Channel logic enhancement mode power field
effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state
resistance.
These devices are particularly suited for low voltage application such
as cellular phone, notebook computer power management and other
battery powered circuits, and low in-line power loss that are needed
in a very small outline surface mount package.
FEATURES
● RDS(ON)≦37mΩ@VGS=10V
● RDS(ON)≦49mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
PIN CONFIGURATION
(SOT-23)
Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
PIN DESCRIPTION
Pin Symbol Description
1 G Gate
2 S Source
3 D Drain
*The device mounted on 1in2 FR4 board with 2 oz copper
e
Ordering Information: ME2306 (Pb-free)
ME2306-G (Green product-Halogen free)
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Symbol Parameter Limit Min Typ Max Unit
STATIC PARAMETERS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 3
V
IGSS Gate-Body Leakage Current VDS=0V, VGS=±20V ±100 nA
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V
TJ=55℃ 10
μA
ID(ON) On-State Drain Currenta VDS≧5V, VGS= 10V 20 A
VGS=10V, ID= 4A 25 37
RDS(ON) Drain-Source On-Resistancea
VGS=4.5V, ID= 3.5A 35 49
mΩ
VSD Diode Forward Voltage IS=1.25A, VGS=0V 0.8 1.2 V
DYNAMIC PARAMETERS
Qg Total Gate Charge VDS=15V, VGS=10V, ID=4A 13
Qg Total Gate Charge 6.3
Qgs Gate-Source Charge 2.9
Qgd Gate-Drain Charge
VDS=15V, VGS=4.5V, ID=4A
2.4
nC
Rg Gate Resistance f =1MHz 0.6 Ω
Ciss Input Capacitance 380
Coss Output Capacitance 64
Crss Reverse Transfer Capacitance
VDS=15V, VGS=0V, f=1MHZ
15
pF
td(on) Turn-On Delay Time 9
tr Rise Time 14
td(off) Turn-Off Delay Time 33
tf Fall Time
VDD=15V, RL =15Ω
ID=1A, VGEN=10V, RG=6Ω
3
ns
Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
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Typical Characteristics (TJ =25℃ Noted)
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Typical Characteristics (TJ =25℃ Noted)
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MILLIMETERS (mm)
DIM MIN MAX
A 2.800 3.00
B 1.200 1.70
C 0.900 1.30
D 0.350 0.50
G 1.780 2.04
H 0.010 0.15
J 0.085 0.20
K 0.300 0.65
L 0.890 1.02
S 2.100 3.00
V 0.450 0.60
SOT-23 Package Outline
