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User Manual: Datasheets ME2306, ME2306-G, ME2306A, ME2306A-G, ME2306D, ME2306D-G.

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ME2306/ME2306-G
N-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION

FEATURES

The ME2306 is the N-Channel logic enhancement mode power field

● RDS(ON)≦37mΩ@VGS=10V

effect transistors, using high cell density, DMOS trench technology.

● RDS(ON)≦49mΩ@VGS=4.5V

This high density process is especially tailored to minimize on-state

● Super high density cell design for extremely low RDS(ON)

resistance.

● Exceptional on-resistance and maximum DC current

These devices are particularly suited for low voltage application such

capability

as cellular phone, notebook computer power management and other
battery powered circuits, and low in-line power loss that are needed
in a very small outline surface mount package.

PIN

CONFIGURATION

PIN

DESCRIPTION

(SOT-23)
Top View

Pin

Symbol

Description

1

G

Gate

2

S

Source

3

D

Drain

e Ordering Information: ME2306 (Pb-free)
ME2306-G (Green product-Halogen free)

Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter

Symbol

Steady State

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain

TA=25℃

Current(Tj=150℃)

TA=70℃

Pulsed Drain Current
Maximum Power Dissipation

4.7

ID
IDM

TA=25℃
TA=70℃

Operating Junction Temperature

20
1.32

PD
TJ

Thermal Resistance-Junction to Ambient*

RθJA

Thermal Resistance-Junction to Case*

RθJC

A

3.7

W

0.84
-55 to 150

℃

T≦10 sec

70

Steady State

95
65

℃/W
℃/W

*The device mounted on 1in2 FR4 board with 2 oz copper

Jan, 2009-Ver4.2

01

ME2306/ME2306-G
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol

Parameter

Limit

Min

Typ

Max

Unit

STATIC PARAMETERS
V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

30

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1

IGSS

Gate-Body Leakage Current

VDS=0V, VGS=±20V

±100

VDS=30V, VGS=0V

1

IDSS

Zero Gate Voltage Drain Current

3

VDS=30V, VGS=0V

10

TJ=55℃
ID(ON)

On-State Drain Currenta

RDS(ON)

Drain-Source On-Resistancea

VSD

Diode Forward Voltage

VDS≧5V, VGS= 10V

20

V
nA

μA

A

VGS=10V, ID= 4A

25

37

VGS=4.5V, ID= 3.5A

35

49

IS=1.25A, VGS=0V

0.8

1.2

VDS=15V, VGS=10V, ID=4A

13

mΩ
V

DYNAMIC PARAMETERS
Qg

Total Gate Charge

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Rg

Gate Resistance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

15

td(on)

Turn-On Delay Time

9

tr

Rise Time

VDD=15V, RL =15Ω

14

td(off)

Turn-Off Delay Time

ID=1A, VGEN=10V, RG=6Ω

33

tf

Fall Time

6.3
VDS=15V, VGS=4.5V, ID=4A

2.9

nC

2.4
f =1MHz

0.6

Ω

380
VDS=15V, VGS=0V, f=1MHZ

64

pF

ns

3

Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing.

b. Matsuki reserves the right to improve product design, functions and reliability without notice.

Jan, 2009-Ver4.2

02

ME2306/ME2306-G
N-Channel Enhancement Mode MOSFET
Typical Characteristics (TJ =25℃ Noted)

Jan, 2009-Ver4.2

03

ME2306/ME2306-G
N-Channel Enhancement Mode MOSFET
Typical Characteristics (TJ =25℃ Noted)

Jan, 2009-Ver4.2

04

ME2306/ME2306-G
N-Channel Enhancement Mode MOSFET

SOT-23 Package Outline

DIM

Jan, 2009-Ver4.2

MILLIMETERS (mm)
MIN

MAX

A

2.800

3.00

B

1.200

1.70

C

0.900

1.30

D

0.350

0.50

G

1.780

2.04

H

0.010

0.15

J

0.085

0.20

K

0.300

0.65

L

0.890

1.02

S

2.100

3.00

V

0.450

0.60

05

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