MT3401 Datasheet. Www.s Manuals.com. Mos Tech
User Manual: Marking of electronic components, SMD Codes 03, 03**, 030N03LS, 030N03MS, 030N04NS, 035N04LS, 036N04L, 03C. Datasheets BSC030N03LS G, BSC030N03MS G, BSC030N04NS G, BSC035N04LS G, DTC143TCA, DTC143TEB, IPD036N04L G, MT3401, PDTA114EE, PSOT03, PSOT03C.
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茂钿半導體股份有限公司 MT3401 Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor FEATURES ● ● ● ● PRODUCT SUMMARY Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package VDSS -30V ID RDS(ON) (mΩ) Typ 45@ VGS=-10V -5.6A 65 @ VGS=-4.5V D S NOTE：The MT3401 is available in a lead-free package S G G D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Sym bol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID -5.6 A IDM -25 A Drain-source Diode Forward Currentª IS -1.5 A Maximum Power Dissipationª PD 1.5 W Operating Junction and Storage Temperature Range TJ,TSTG Drain Current-Continuousª@Tj=125℃ - Pulse d b -55 to 150 °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª © 2 0 0 9 Mos-Tech Semiconductor Rth JA 1 90 ℃/W http//www.mtsemi.com 茂钿半導體股份有限公司 MT3401 Mos-Tech Semiconductor Co.,LTD. ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Parameter Sym bol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250µA Zero Gate Voltage Drain Current IDSS VDS=-30V,V = GS 0V 1 µA Gate-Body Leakage IGSS VGS=±10V,V = DS 0V ±100 nA -2.0 V -30 V ON CHARACTERITICS Gate Threshold Voltage VGS(th) V Drain-Source On-State Resistance RDS(ON) Forward Transconductance ɡFS DS=VGS,ID=-250µA -1.2 VGS=-10V,I = D -4.6A 45 50 VGS=-4.5V,I = D -3.0A 65 70 = D -1.7A VGS=-10V,I 17 S 1226 pF 187 pF 91 pF 5.9 ns 6.9 ns 48 ns 16 ns 9.8 nC 1.8 nC 4.5 nC mΩ DAYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS=-15V,VGS=0V f=1.0MHZ SWITCHING CHARACTERISISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tD(ON) tr tD(OFF) tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd © 2 0 0 9 Mos-Tech Semiconductor VDD=-15V ID=-1.0A, VGEN=-10V RL=15ohm RGEN=6ohm VDS=-15V,ID=-1.7A VGS=-10V 2 http//www.mtsemi.com 茂钿半導體股份有限公司 MT3401 Mos-Tech Semiconductor Co.,LTD. ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted) Parameter Sym bol Condition Min Typ Max Unit -0.8 -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS= =0V,IS -1.25A Notes -ID, Drain Current (A) -ID,Drain Current(A) a. Surface Mounted on FR4 Board, t≦10sec b. Pulse Test: Pulse Width≦300Us, Duty Cycle≦2% c. Guaranteed by design, not subject to production testing. - VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-source Voltage (V) Figure 2.Transfer Characteristics C,Capacitance(pF) RDS(ON), On-Resistance(mΩ) Figure 1.Output Characteristics VGS=-10V ID=-1.7A - VGS, Drain-to Source Voltage Figure3.Capacitance Figure4. On-Resistance Variation with Temperature © 2 0 0 9 Mos-Tech Semiconductor 3 http//www.mtsemi.com 茂钿半導體股份有限公司 MT3401 Mos-Tech Semiconductor Co.,LTD. 0.4 10 ID=-250uA 0.3 0.2 0.1 0.0 -0.1 -0.2 --50 -25 0 25 50 75 1 TJ=150℃ Is-Source Currenti(A) Gate-Source Threshold Voltage Vth, Normalized 0.5 00 12 5 TJ=25℃ 1 0.2 0. 4 0. 6 0.8 1. 0 1. 2 1.4 1. 6 VSD-Soures-to-Drain Voltage(V) Tj,. Junction Temperature(℃) 21 20 18 10 -Is,Source-drain current(A) ɡFS,Transconductance(S) Figure5.Gate Threshold Variation With Temperature 15 12 9 6 3 VGS=-5V 0 0 5 10 15 20 25 1 0.6 30 1. 2 1. 4 1. 6 50 10 10 VDS=-15V -ID,Drain Current(A) -VGS,Gate to Source Voltage 1. 0 Figure8.Body Diode Forward Voltage Variation with Source Current Figure7.Transconductance Variation With Drain Current ID=-1.7A 6 4 2 0 0. 8 -VSD, Body Diode Forward Voltage -IDS, Drain-Source Current (A) 8 Tj=25℃ 0 1 0.1 0.03 0 1 2 3 4 5 6 0.1 7 10 20 50 -VDS, Drain-Source Voltage(V) Qɡ, Total Gate Charge(nC) Figure9. Gate Charge © 2 0 0 9 Mos-Tech Semiconductor 1 Figure10.Maximum Safe Operating Area 4 http//www.mtsemi.com SOT-23 Std Tape and Reel Data SOT23-3L Packaging Configuration: F igure 1.0 Cus tomized Lab el Packaging Description: S OT 23-3L par ts ar e s hipped i n tape. T he carrier tape is made from a d issipative (carbon filled) polycarbonate resin. T he cover tape i s a m ultilay er film (Heat Activated Adhes ive in nature) primarily c omposed o f polyester film, adhes ive l ayer, seal ant, and anti-static s prayed ag ent. T hes e reeled parts i n s tandard option ar e s hipped with 3, 000 units per 7 " or 177mm diameter reel. T he r eels ar e dark blue in c olor and is made of polystyrene plas tic ( antistatic coated). O ther option c omes in 10,000 units per 13" or 330c m diameter reel. T his and s ome other options ar e des cribed in the P ackaging I nformation table. Antis tatic Cover Tape ACTR Label T hes e f ull reel s are i ndividually labeled and plac ed inside a s tandar d immediate bo x made o f recyclable corrugated brown paper w ith a F airchild logo p rinting. One box contains five reel s maximum. And thes e immediate boxes are plac ed inside a labeled s hipping box which c omes i n different s izes depending on the number of parts s hipped. E mbosse d Carri er Tape 038I 038I 038I 038I SOT23-3L Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag S tandar d (no flow code) TN R 3, 000 D87Z 7" Dia 13" 193x 183x80 355x 333x40 Max qty per Box 15, 000 30, 000 Weight per unit (gm) 0. 0082 0. 0082 Weight per Reel (kg) 0. 1175 0. 4006 Reel Size Box Dimension (mm) SOT23-3L Unit Orientation TN R 10, 000 03 X X MARKING DIAGRAM Note/Comments X:Month Code X:Year Code B arcode Lab el 03：PartNO. B arcode L abel s ample B L XH1 MT3401AACTR QT Y : 3000 XH2 C97I27K1-038I-K133 M13274 SPEC : D D MOS-TECH SEMICONDUCTOR LTD (ACTR) 193m m x 183m m x 80m m P izza B ox for S tandard O ption SOT23-3L Tape Leader and Trailer Configuration: F igure 2.0 C arrier Tape C over T ape Tr ailer Ta pe 300mm minimum or 75 em pty pock ets ©2009 MOS-TECH Semiconductor Corporation C omponents Leade r T ape 500mm minimum or 125 em pty pockets 2009, Rev. D SOT-23 Std Tape and Reel Data, continued SOT23-3L Embossed Carrier Tape Configuration: Figure 3.0 P0 P2 D0 D1 T E1 W F E2 Wc B0 Tc A0 P1 K0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SOT-23 (8mm) 3.15 +/-0.10 2.77 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.30 +/-0.10 0.228 +/-0.013 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT23-3L Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10. 9 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10. 9 8mm 7" Dia 7.00 177.8 8mm 13" Dia 13.00 330 Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) October 2005, Rev. D1 MOS-TECH Semiconductor Co.,LTD Notes regarding these materials 1. This document is provided for reference purposes only so that Mos-tech customers may select the appropriate Mos-tech products for their use. Mos-tech neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Mos-tech or any third party with respect to the information in this document. 2. Mos-tech shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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Mos-tech shall have no liability for malfunctions or damages arising out of the use of Mos-tech products beyond such specified ranges. 10. Although Mos-tech endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Mos-tech product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. 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Please contact a Mos-tech sales office if you have any questions regarding the information contained in this document, Mos-tech semiconductor products, or if you have any other inquiries. ©2010 MOS-TECH Semiconductor Corporation www.mtsemi.com MOS-TECH Semiconductor Co.,LTD ⊼ᛣ ᴀ᭛াᰃখ㗗䆥᭛ˈࠡ义᠔䕑㣅᭛⠜“Cautions”᳝ℷᓣᬜDŽ ݇Ѣ߽⫼ᴀ䌘᭭ᯊⱘ⊼ᛣџ乍 1. ᴀ䌘᭭ᰃЎњ䅽⫼᠋ḍ⫼䗨䗝ᢽড়䗖ⱘᴀ݀ৌѻકⱘখ㗗䌘᭭ˈᇍѢᴀ䌘᭭Ё᠔䆄䕑ⱘᡔᴃֵᙃˈᑊ䴲ᛣ ੇⴔᇍᴀ݀ৌ㗙ϝ㗙ⱘⶹ䆚ѻᴗঞ݊Ҫᴗֱ߽ߎخ䆕ᇍᅲᮑᴗ䖯㸠ⱘᡓ䇎DŽ 2. ᇍѢՓ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄ǃǃ㸼ǃᑣǃㅫ⊩ঞ݊Ҫᑨ⫼⬉䏃՟㗠ᓩ䍋ⱘᤳᆇ㗙ᇍϝ㗙ⱘ ⶹ䆚ѻᴗঞ݊Ҫᴗ߽䗴៤։⢃ˈᴀ݀ৌϡᡓᢙӏԩ䋷ӏDŽ 3. ϡ㛑ᇚᴀ䌘᭭᠔䆄䕑ⱘѻકᡔᴃ⫼Ѣ㾘⸈ണᗻ℺఼ⱘᓔথㄝⳂⱘǃݯџⳂⱘ݊Ҫⱘݯ䳔⫼䗨ᮍ䴶DŽ ˈߎষᯊᖙ乏䙉ᅜ中国ⱘlj∛ঞ䌌ᯧ⊩NJঞ݊ҪߎষⱘⳌ݇⊩Ҹᑊሹ㸠䖭ѯ⊩ҸЁ㾘ᅮⱘᖙ㽕 㓁DŽ 4. ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄ǃǃ㸼ǃᑣǃㅫ⊩ҹঞ݊Ҫᑨ⫼⬉䏃՟ㄝ᠔ֵ᳝ᙃഛЎᴀ䌘᭭থ㸠ᯊⱘݙᆍˈ ᴀ݀ৌ᳝ৃ㛑خџܜ䗮ⶹⱘᚙމϟˈᇍᴀ䌘᭭᠔䆄䕑ⱘѻક㗙ѻક㾘Ḑ䖯㸠ᬍDŽ᠔ҹ䌁фՓ⫼ ᴀ݀ৌⱘञᇐԧѻકПࠡˈ䇋џܜᴀ݀ৌⱘ㧹Ϯにষ⹂䅸᳔ᮄⱘֵᙃᑊ㒣ᐌ⬭ᛣᴀ݀ৌ䗮䖛݀ৌЏ义 (http://www.mtsemi.com)ㄝ݀ᓔⱘ᳔ᮄֵᙃDŽ 5. ᇍѢᴀ䌘᭭Ё᠔䆄䕑ⱘֵᙃˈࠊᯊ៥Ӏሑֱ䆕ߎ⠜ᯊⱘ㊒⹂ᗻˈԚϡᡓᢙᴀ䌘᭭ⱘভ䗄ϡᔧ㗠㟈Փ乒 ᅶ䙁ফᤳ༅ㄝⱘӏԩⳌ݇䋷ӏDŽ 6. Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄ǃǃ㸼ㄝ᠔⼎ⱘᡔᴃݙᆍǃᑣǃㅫ⊩ঞ݊Ҫᑨ⫼⬉䏃՟ᯊˈϡҙ㽕ᇍ᠔ Փ⫼ⱘᡔᴃֵᙃ䖯㸠ऩ⣀䆘Ӌˈ䖬㽕ᇍᭈϾ㋏㒳䖯㸠ⱘߚܙ䆘ӋDŽ䇋乒ᅶ㞾㸠䋳䋷ˈ䖯㸠ᰃ৺䗖⫼ⱘ߸ᮁDŽ ᴀ݀ৌᇍѢᰃ৺䗖⫼ϡ䋳ӏԩ䋷ӏDŽ 7. ᴀ䌘᭭Ё᠔䆄䕑ⱘѻકᑊ䴲䩜ᇍϛϔߎ⦄ᬙ䱰ᰃ䫭䇃䖤㸠ህӮ࿕㚕ࠄҎⱘ⫳ੑ㒭Ҏԧᏺᴹॅᆇⱘᴎ఼ǃ ㋏㒳 བ⾡ᅝܼ㺙㕂㗙䖤䕧Ѹ䗮⫼ⱘǃए⭫ǃ➗⚻ࠊǃ㟾఼ẄǃḌ㛑ǃ⍋ᑩЁ㒻⫼ⱘᴎ఼㋏㒳ㄝ 㗠䆒䅵ࠊ䗴ⱘ⡍߿ᰃᇍѢક䋼ৃ䴴ᗻ㽕∖ᵕ催ⱘᴎ఼㋏㒳ㄝ˄ᇚᴀ݀ৌᣛᅮ⫼Ѣ≑䔺ᮍ䴶ⱘѻક⫼ Ѣ≑䔺ᯊ䰸˅DŽབᵰ㽕⫼ѢϞ䗄ⱘⳂⱘˈ䇋ࡵᖙџܜᴀ݀ৌⱘ㧹Ϯにষ䆶DŽˈᇍѢ⫼ѢϞ䗄Ⳃⱘ 㗠䗴៤ⱘᤳ༅ㄝˈᴀ݀ৌὖϡ䋳䋷DŽ 8. 䰸Ϟ䗄乍ݙᆍˈϡ㛑ᇚᴀ䌘᭭Ё䆄䕑ⱘѻક⫼Ѣҹϟ⫼䗨DŽབᵰ⫼Ѣҹϟ⫼䗨㗠䗴៤ⱘᤳ༅ˈᴀ݀ৌ ὖϡ䋳䋷DŽ 1˅⫳ੑ㓈ᣕ㺙㕂DŽ 2˅ỡඟѢҎԧՓ⫼ⱘ㺙㕂DŽ 3˅⫼Ѣ⊏⭫˄ߛ䰸ᙷ䚼ǃ㒭㥃ㄝ˅ⱘ㺙㕂DŽ 4˅݊ҪⳈᕅડࠄҎⱘ⫳ੑⱘ㺙㕂DŽ 9. Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻકᯊˈᇍѢ᳔乱ᅮؐǃᎹ⬉⑤⬉य़ⱘ㣗ೈǃᬒ⛁⡍ᗻǃᅝ㺙ᴵӊঞ݊Ҫᴵӊ䇋 ᴀ݀ৌ㾘ᅮⱘֱ䆕㣗ೈݙՓ⫼DŽབᵰ䍙ߎњᴀ݀ৌ㾘ᅮⱘֱ䆕㣗ೈՓ⫼ᯊˈᇍѢ⬅ℸ㗠䗴៤ⱘᬙ䱰ߎ⦄ ⱘџᬙˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏDŽ 10.ᴀ݀ৌϔⳈ㟈Ѣᦤ催ѻકⱘ䋼䞣ৃ䴴ᗻˈԚϔ㠀ᴹ䇈ˈञᇐԧѻકᘏӮҹϔᅮⱘὖ⥛থ⫳ᬙ䱰ǃ㗙⬅ ѢՓ⫼ᴵӊϡৠ㗠ߎ⦄䫭䇃䖤㸠ㄝDŽЎњ䙓ܡᴀ݀ৌⱘѻકথ⫳ᬙ䱰㗙䫭䇃䖤㸠㗠ᇐ㟈Ҏ䑿џᬙ☿♒ 䗴៤⼒Ӯᗻⱘᤳ༅ˈᏠᳯᅶ᠋㛑㞾㸠䋳䋷䖯㸠ݫԭ䆒䅵ǃ䞛পᓊ⚻ᇍㄪঞ䖯㸠䰆ℶ䫭䇃䖤㸠ㄝⱘᅝܼ䆒䅵 ˄ࣙᣀ⹀ӊ䕃ӊϸᮍ䴶ⱘ䆒䅵˅ҹঞ㗕࣪໘⧚ㄝˈ䖭ᰃЎᴎ఼㋏㒳ⱘߎॖֱ䆕DŽ⡍߿ᰃऩ⠛ᴎⱘ䕃ӊˈ ⬅Ѣऩ⣀䖯㸠偠䆕ᕜೄ䲒ˈ᠔ҹ㽕∖乒ᅶࠊ䗴ⱘ᳔㒜ⱘᴎ఼ঞ㋏㒳Ϟ䖯㸠ᅝܼẔ偠ᎹDŽ 11. བᵰᡞᴀ䌘᭭᠔䆄䕑ⱘѻકҢ݊䕑ԧ䆒Ϟौϟˈ᳝ৃ㛑䗴៤၈ܓ䇃৲ⱘॅ䰽DŽ乒ᅶᇚᴀ݀ৌѻકᅝ㺙ࠄ 乒ᅶⱘ䆒Ϟᯊˈ䇋乒ᅶ㞾㸠䋳䋷ᇚᴀ݀ৌѻક䆒㕂Ўϡᆍᯧ࠹㨑ⱘᅝܼ䆒䅵DŽབᵰҢ乒ᅶⱘ䆒Ϟ࠹㨑㗠 䗴៤џᬙᯊˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏDŽ 12.ᕫࠄᴀ݀ৌⱘџܜк䴶䅸ৃᯊˈϡৃᇚᴀ䌘᭭ⱘϔ䚼ߚ㗙ܼ䚼䕀䕑㗙ࠊDŽ 13.བᵰ䳔㽕њ㾷݇Ѣᴀ䌘᭭ⱘ䆺㒚ݙᆍˈ㗙᳝݊Ҫ݇ᖗⱘ䯂乬ˈ䇋ᴀ݀ৌⱘ㧹Ϯにষ䆶DŽ Keep safety first in your circuit designs! 1. MOS-TECH Semiconductor Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. ©2010 MOS-TECH Semiconductor Corporation www.mtsemi.com www.s-manuals.com
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