MT3401 Datasheet. Www.s Manuals.com. Mos Tech

User Manual: Marking of electronic components, SMD Codes 03, 03**, 030N03LS, 030N03MS, 030N04NS, 035N04LS, 036N04L, 03C. Datasheets BSC030N03LS G, BSC030N03MS G, BSC030N04NS G, BSC035N04LS G, DTC143TCA, DTC143TEB, IPD036N04L G, MT3401, PDTA114EE, PSOT03, PSOT03C.

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P-Channel Enhancement Mode Field Effect Transistor

D S

S G

G

ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）

Parameter Sym bol Limit Unit

Drain-Source Voltage VDS -30 V

Gate-Source Voltage VGS ±20 V

Drain Current-Continuousª@Tj=125℃

- Pulse b

d

ID -5.6 A

IDM -25 A

Drain-source Diode Forward Currentª IS -1.5 A

Maximum Power Dissipationª PD 1.5 W

Operating Junction and Storage

Temperature Range TJ,TSTG -55 to 150 °C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to Ambientª Rth JA 90 ℃/W

©2009 Mos-Tech Semiconductor 1 http//www.mtsemi.com

FEATURES

● Super high dense cell design for low RDS(ON)

● Rugged and reliable

● Simple drive requirement

● SOT-23 package

PRODUCT SUMMARY

VDSS ID RDS(ON) (mΩ) Typ

-30V -5.6A 45@ VGS=-10V

65 @ VGS=-4.5V

NOTE：The MT3401 is available

in a lead-free package

MT3401

Mos-Tech Semiconductor Co.,LTD

.

茂钿半導體股份有限公司

D

ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

Parameter Sym bol Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250µA -30 V

Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V 1 µA

Gate-Body Leakage IGSS VGS=±10V,VDS=0V ±100 nA

ON CHARACTERITICS

Gate Threshold Voltage VGS(th) V DS=VGS,ID=-250µA -1.2 -2.0 V

Drain-Source On-State Resistance RDS(ON)

VGS=-10V,ID=-4.6A 45 50

mΩ

VGS=-4.5V,ID=-3.0A 65 70

Forward Transconductance ɡFS VGS=-10V,ID=-1.7A 17 S

DAYNAMIC CHARACTERISTICS

Input Capacitance CISS

VDS=-15V,VGS=0V

f=1.0MHZ

1226 pF

Output Capacitance COSS 187 pF

Reverse Transfer Capacitance CRSS 91 pF

SWITCHING CHARACTERISISTICS

Turn-On Delay Time tD(ON) VDD=-15V

ID=-1.0A,

VGEN=-10V

RL=15ohm

RGEN=6ohm

5.9 ns

Rise Time tr 6.9 ns

Turn-Off Delay Time tD(OFF) 48 ns

Fall Time tf 16 ns

Total Gate Charge Qg

VDS=-15V,ID=-1.7A

VGS=-10V

9.8 nC

Gate-Source Charge Qgs 1.8 nC

Gate-Drain Charge Qgd 4.5 nC

©2009 Mos-Tech Semiconductor 2 http//www.mtsemi.com

MT3401

Mos-Tech Semiconductor Co.,LTD

.

茂钿半導體股份有限公司

ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted)

Parameter Sym bol Condition Min Typ Max Unit

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage VSD VGS=0V,IS=-1.25A -0.8 -1.2 V

Notes

a. Surface Mounted on FR4 Board, t≦10sec

b. Pulse Test: Pulse Width≦300Us, Duty Cycle≦2%

c. Guaranteed by design, not subject to production testing.

- VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-source Voltage (V)

Figure 1.Output Characteristics Figure 2.Transfer Characteristics

- VGS, Drain-to Source Voltage

Figure3.Capacitance Figure4. On-Resistance Variation with

Temperature

©2009 Mos-Tech Semiconductor 3 http//www.mtsemi.com

-ID, Drain Current (A)

-ID,Drain Current(A)

C,Capacitance(pF)

VGS=-10V

ID=-1.7A

RDS(ON), On-Resistance(mΩ)

MT3401

Mos-Tech Semiconductor Co.,LTD

.

茂钿半導體股份有限公司

--50 -25 0 25 50 75 1 00 12 5

0.5

0.4

0.3

0.2

0.1

0.0

-0.1

-0.2

0.2 0. 4 0. 6 0.8 1. 0 1. 2 1.4 1. 6

21

18

15

12

9

6

3

0

20

10

1

0

0 5 10 15 20 25 30 0.6 0. 8 1. 0 1. 2 1. 4 1. 6

0 1 2 3 4 5 6 7

-

©2009 Mos-Tech Semiconductor 4 http//www.mtsemi.com

Vth, Normalized

Gate-Source Threshold Voltage

Is-Source Currenti(A)

10

1

Tj,. Junction Temperature(℃)

Figure5.Gate Threshold Variation

With Temperature

VSD-Soures-to-Drain Voltage(V)

ɡFS,Transconductance(S)

-Is,Source-drain current(A)

-IDS, Drain-Source Current (A)

Figure7.Transconductance Variation

With Drain Current

-VGS,Gate to Source Voltage

50

10

1

0.1

0.03

-VSD, Body Diode Forward Voltage

Figure8.Body Diode Forward Voltage

Variation with Source Current

0

2

4

6

8

10

0.1 1 10 20 50

Qɡ, Total Gate Charge(nC)

Figure9. Gate Charge

-VDS, Drain-Source Voltage(V)

Figure10.Maximum Safe Operating Area

-ID,Drain Current(A)

ID=-250uA

TJ=150℃

VGS=-5V Tj=25℃

VDS=-15V

ID=-1.7A

TJ=25℃

MT3401

Mos-Tech Semiconductor Co.,LTD

.

茂钿半導體股份有限公司

SOT23-3L Packaging

Configuration: F igure 1.0

C omponents Leade r T ape

500mm minimum or

125 em pty pockets

Trailer Ta pe

300mm minimum or

75 em pty pock ets

SOT23-3L Tape Leader and Trailer

Configuration: F igure 2.0

C over T ape

C arrier Tape

Note/Comments

Packaging Option

SOT23-3L Packaging Information

S tandar d

(no flow code) D87Z

Packaging type

Reel Size

TN R

7" D ia

TN R

13"

Qty per Reel/Tube/Bag 3, 000 10, 000

Box Dimension (mm) 193x 183 x80 355x 333 x40

Max qty per Box 15, 000 30, 000

Weight per unit (gm) 0. 0082 0. 0082

Weight per Reel (kg) 0. 1175 0. 4006

SOT23-3L Unit Orientation

ACTR Label

Cus tomized Lab el

E mbosse d

Carri er Tape

Antistatic Cover Tape

Packaging Description:

S OT 23-3L par ts ar e s hipped in tape. T he carrier ta pe is

made from a d issipative (carbon filled) polycarbonate

resin. T he cover tape i s a m ultilayer film (Hea t Activated

Adhes ive in nature) primarily c omposed o f polyes ter film,

adhes ive l ayer, seal ant, and anti-static s prayed ag ent.

T hes e reeled parts i n s tandard option ar e s hipped with

3, 000 units per 7 " or 177mm diameter reel. T he r eels ar e

dark blue in c olor and is made of polystyrene plas tic ( anti-

static coated) . O ther option c omes i n 10,000 units per 13"

or 330c m diameter reel. T his and s ome other options ar e

des cribed in the P ackaging Information table.

T hes e f ull reel s are i ndividually labe led and plac ed inside

a s tandar d immediate box made o f recyclable corrugated

brown paper with a F airchild logo p rinting. O ne box

contains f ive reel s maximum. And thes e immediate boxes

are placed inside a labeled s hipping box which c omes in

different siz es depending on the number of parts s hipped.

XH1 MT3401AACTR

XH2 C97I27K1-038I-K133 M13274

D

SPEC :

QT Y : 3000

D

193m m x 183m m x 80m m

P izza B ox for S tandard O ption

B arc ode

Lab el

B

L

B arcode L abel s ample

MOS-TECH SEMICONDUCTOR LTD (ACTR)

SOT-23 Std Tape and Reel Data

©2009 MOS-TECH Semiconductor Corporation 2009, Rev. D

038I 038I 038I 038I



MARKING DIAGRAM



03 X X

03：PartNO.

X:YearCode

X:MonthCode

SOT-23 Std Tape and Reel Data, continued

Dimensions are in millimeter

Pkg type

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

SOT-23

(8mm)

3.15

+/-0.10

2.77

+/-0.10

8.0

+/-0.3

1.55

+/-0.05

1.125

+/-0.125

1.75

+/-0.10

6.25

min

3.50

+/-0.05

4.0

+/-0.1

4.0

+/-0.1

1.30

+/-0.10

0.228

+/-0.013

5.2

+/-0.3

0.06

+/-0.02

Dimensions are in inches and millimeters

Tape Size Reel

Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

8mm 7" Dia 7.00

177.8

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

2.165

55

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.311 - 0.429

7.9 - 10. 9

8mm 13" Dia 13.00

330

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

4.00

100

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.311 - 0.429

7.9 - 10. 9

See detail AA

Dim A

max

13" Diameter Option

7" Diameter Option

Dim A

Max

See detail AA

W3

W2 max Measured at Hub

W1 Measured at Hub

Dim N

Dim D

min

Dim C

B Min

DETAIL AA

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum component rotation

0.5mm

maximum

0.5mm

maximum

Sketch C (Top View)

Component lateral movement

Typical

component

cavity

center line

20 deg maximum

Typical

component

center line

B0

A0

Sketch B (Top View)

Component Rotation

Sketch A (Side or Front Sectional View)

Component Rotation

User Direction of Feed

SOT23-3L Embossed Carrier Tape

Configuration: Figure 3.0

SOT23-3L Reel Configuration: Figure 4.0

P1 A0

D1

FW

E1

E2

Tc

Wc

K0

T

B0

D0P0 P2

October 2005, Rev. D1

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ѢՓ⫼ᴵӊϡৠ㗠ߎ⦄䫭䇃䖤㸠ㄝDŽЎњ䙓ܡ಴ᴀ݀ৌⱘѻકথ⫳ᬙ䱰៪㗙䫭䇃䖤㸠㗠ᇐ㟈Ҏ䑿џᬙ੠☿♒

៪䗴៤⼒Ӯᗻⱘᤳ༅ˈᏠᳯᅶ᠋㛑㞾㸠䋳䋷䖯㸠ݫԭ䆒䅵ǃ䞛পᓊ⚻ᇍㄪঞ䖯㸠䰆ℶ䫭䇃䖤㸠ㄝⱘᅝܼ䆒䅵

˄ࣙᣀ⹀ӊ੠䕃ӊϸᮍ䴶ⱘ䆒䅵˅ҹঞ㗕࣪໘⧚ㄝˈ䖭ᰃ԰Ўᴎ఼੠㋏㒳ⱘߎॖֱ䆕DŽ⡍߿ᰃऩ⠛ᴎⱘ䕃ӊˈ

⬅Ѣऩ⣀䖯㸠偠䆕ᕜೄ䲒ˈ᠔ҹ㽕∖೼乒ᅶࠊ䗴ⱘ᳔㒜ⱘᴎ఼ঞ㋏㒳Ϟ䖯㸠ᅝܼẔ偠Ꮉ԰DŽ

11. བᵰᡞᴀ䌘᭭᠔䆄䕑ⱘѻકҢ݊䕑ԧ䆒໛Ϟौϟˈ᳝ৃ㛑䗴៤၈ܓ䇃৲ⱘॅ䰽DŽ乒ᅶ೼ᇚᴀ݀ৌѻકᅝ㺙ࠄ

乒ᅶⱘ䆒໛Ϟᯊˈ䇋乒ᅶ㞾㸠䋳䋷ᇚᴀ݀ৌѻક䆒㕂Ўϡᆍᯧ࠹㨑ⱘᅝܼ䆒䅵DŽབᵰҢ乒ᅶⱘ䆒໛Ϟ࠹㨑㗠

䗴៤џᬙᯊˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏDŽ

12.೼᳾ᕫࠄᴀ݀ৌⱘџܜк䴶䅸ৃᯊˈϡৃᇚᴀ䌘᭭ⱘϔ䚼ߚ៪㗙ܼ䚼䕀䕑៪㗙໡ࠊDŽ

13.བᵰ䳔㽕њ㾷݇Ѣᴀ䌘᭭ⱘ䆺㒚ݙᆍˈ៪㗙᳝݊Ҫ݇ᖗⱘ䯂乬ˈ䇋৥ᴀ݀ৌⱘ㧹Ϯにষ੼䆶DŽ

݇Ѣ߽⫼ᴀ䌘᭭ᯊⱘ⊼ᛣџ乍

⊼ᛣ

ᴀ᭛াᰃখ㗗䆥᭛ˈࠡ义᠔䕑㣅᭛⠜“Cautions”݋᳝ℷᓣᬜ࡯DŽ

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MOS-TECH Semiconductor Co.,LTD

  

1. MOS-TECH Semiconductor Corp. puts the maximum effort into making semiconductor products better

and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or mishap.

Keep safety first in your circuit designs!

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