MTP5103N3 Datasheet. Www.s Manuals.com. Cystek
User Manual: Marking of electronic components, SMD Codes 51, 51**, 51***, 5103, 51031, 5108, 51117, 51123, 51123A, 51125, 5121*, 51216, 51219, 5121M, 51225, 5160x, 51716, 5173, 5193, 5198NL, 5199NL, 51A, 51AC30B, 51AC33, 51AC33B, 51Y. Datasheets 1.5SMC51AT3, AT5160TP1U, BZV49-C51, CS51031, FX011Z, G5108RDU, G5111T11, G5121TB1U, G5173R41U, G5193R41U, KB4312B-GRE, LP2951ACSDX-3.3, LP2951CSD-3.0, LP2951CSD-3.3, MM5Z2V7, MTP5103N3, PJ5121EMR, PJ5121EQFN, SST5198NL, SST5199NL, TPS51117PW, TPS51117RGY, TPS51123ARGER, TPS51123
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Spec. No. : C400N3 Issued Date : 2011.11.28 Revised Date : 2012.04.18 Page No. : 1/8 CYStech Electronics Corp. P-Channel Enhancement Mode MOSFET BVDSS -30V MTP5103N3 ID -4.5A RDSON(TYP) VGS=-10V, ID=-4.5A 41mΩ VGS=-4.5V, ID=-3.5A 60mΩ Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTP5103N3 SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25°C Continuous Drain Current @TA=70°C Pulsed Drain Current @VGS=10V (Notes 1, 2) TA=25°C Maximum Power Dissipation (Note 3) TA=75°C Operating Junction and Storage Temperature Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board. MTP5103N3 Symbol Limits Unit VDS VGS ID ID IDM -30 ±20 -4.5 -3.5 -20 1.38 0.83 -55~+150 V V A A A W W °C PD Tj, Tstg CYStek Product Specification Spec. No. : C400N3 Issued Date : 2011.11.28 Revised Date : 2012.04.18 Page No. : 2/8 CYStech Electronics Corp. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient Symbol Rth,ja Limit 90 Unit °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS IDSS *RDS(ON) Min. Typ. Max. Unit -30 -1.0 - -1.4 41 -2.5 ±100 -1 -10 50 V V nA µA µA - 60 4.3 70 - 885 86 81 8 12 30 23 15 3 7 - 32 13.5 -4.5 -18 -1.2 - *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *IS *ISM *VSD *trr *Qrr - mΩ Test Conditions VGS=0, ID=-250µA VDS=VGS, ID=-250µA VGS=±20V, VDS=0 VDS=-24V, VGS=0 VDS=-24V, VGS=0, Tj=125°C ID=-4.5A, VGS=-10V S ID=-3.5A, VGS=-4.5V VDS=-10V, ID=-4.5A pF VDS=-10V, VGS=0, f=1MHz ns VDS=-15V, ID=-1A, VGS=-10V, RD=15Ω, RG=6Ω nC VDS=-15V, ID=-4.5A, VGS=-10V A V ns nC VGS=0V, IS=-1A IF=-4.5A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2% Ordering Information Device MTP5103N3 MTP5103N3 Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping Marking 3000 pcs / Tape & Reel 5103 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400N3 Issued Date : 2011.11.28 Revised Date : 2012.04.18 Page No. : 3/8 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics -ID, Drain Current (A) 20 15 10V 9V 8V 7V 6V 5V -VGS=4.5V -VGS=4V -VGS=3.5V 10 -VGS=3V 5 40 -BVDSS, Drain-Source Breakdown Voltage (V) 25 -VGS=2.5V 38 36 34 32 ID=-250μA, VGS=0V 30 0 0 1 2 3 4 5 6 7 8 -VDS, Drain-Source Voltage(V) 9 -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=-3V -VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) 1000 VGS=-4.5V VGS=-2.5V 100 VGS=-10V VGS=-4V 10 0.001 Tj=150°C 0.6 0.4 0.2 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 160 140 120 100 ID=-4.5A ID=-3.5A 80 60 40 20 0 2 4 6 8 -VGS, Gate-Source Voltage(V) 2 4 6 8 -IDR, Reverse Drain Current (A) 10 Drain-Source On-State Resistance vs Junction Tempearture 180 MTP5103N3 Tj=25°C 0.8 200 0 VGS=0V 1 Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 VGS=-4.5V, ID=-4A VGS=-10V, ID=-5A -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C400N3 Issued Date : 2011.11.28 Revised Date : 2012.04.18 Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2.2 -VGS(th) ,Threshold Voltage-(V) Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss ID=-250uA 2 1.8 1.6 1.4 1.2 1 0.8 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 -40 -20 100 60 80 100 120 140 160 12 1 0.1 VDS=-10V Pulsed Ta=25°C 10 8 VDS=-15V ID=-4.5A 6 4 2 0 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 0 10 Maximum Safe Operating Area 2 4 6 8 10 12 Qg, Total Gate Charge(nC) 14 16 Maximum Drain Current vs JunctionTemperature 100 6 RDS(ON) Limited 10 -ID, Maximum Drain Current(A) -ID, Drain Current (A) 20 40 Gate Charge Characteristics 10 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance-(S) Forward Transfer Admittance vs Drain Current 100μs 1ms 1 10ms 100ms 0.1 DC 0.01 5 4 3 2 1 TA=25°C, VGS=-10V 0 0.01 MTP5103N3 0 Tj, Junction Temperature(°C) 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400N3 Issued Date : 2011.11.28 Revised Date : 2012.04.18 Page No. : 5/8 Typical Characteristics(Cont.) Power Derating Curve 1.6 PD, Power Dissipation(W) 1.4 Mounted on FR-4 board with 1 in² pad area 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 Transient Thermal Response Curves Normalized Transient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t 1/t2 3.TJM-TC=PDM*ZθJC(t) 4.RθJA=90 °C/W 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTP5103N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400N3 Issued Date : 2011.11.28 Revised Date : 2012.04.18 Page No. : 6/8 Reel Dimension Carrier Tape Dimension MTP5103N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400N3 Issued Date : 2011.11.28 Revised Date : 2012.04.18 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP5103N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400N3 Issued Date : 2011.11.28 Revised Date : 2012.04.18 Page No. : 8/8 SOT-23 Dimension Marking: A L 3 B 5103 S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H J Style : Pin 1.Gate 2.Source 3.Drain *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0004 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.01 0.10 DIM J K L S V Inches Min. Max. 0.0035 0.0071 0.0276 REF 0.0374* 0.0830 0.1161 0.0098 0.0256 Millimeters Min. Max. 0.09 0.18 0.70 REF 0.95* 2.10 2.95 0.25 0.65 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP5103N3 CYStek Product Specification www.s-manuals.com
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