MTP5103N3 Datasheet. Www.s Manuals.com. Cystek

User Manual: Marking of electronic components, SMD Codes 51, 51**, 51***, 5103, 51031, 5108, 51117, 51123, 51123A, 51125, 5121*, 51216, 51219, 5121M, 51225, 5160x, 51716, 5173, 5193, 5198NL, 5199NL, 51A, 51AC30B, 51AC33, 51AC33B, 51Y. Datasheets 1.5SMC51AT3, AT5160TP1U, BZV49-C51, CS51031, FX011Z, G5108RDU, G5111T11, G5121TB1U, G5173R41U, G5193R41U, KB4312B-GRE, LP2951ACSDX-3.3, LP2951CSD-3.0, LP2951CSD-3.3, MM5Z2V7, MTP5103N3, PJ5121EMR, PJ5121EQFN, SST5198NL, SST5199NL, TPS51117PW, TPS51117RGY, TPS51123ARGER, TPS51123

Open the PDF directly: View PDF .
Page Count: 9

CYStech Electronics Corp.

Spec. No. : C400N3

Issued Date : 2011.11.28

Revised Date : 2012.04.18

Page No. : 1/8

MTP5103N3 CYStek Product Specification

P-Channel Enhancement Mode MOSFET BVDSS -30V

MTP5103N3 ID -4.5A

VGS=-10V, ID=-4.5A 41mΩ

RDSON(TYP)

VGS=-4.5V, ID=-3.5A 60mΩ

Features

• Low gate charge

• Compact and low profile SOT-23 package

• Advanced trench process technology

• High density cell design for ultra low on resistance

• Pb-free lead plating and halogen-free package

Equivalent Circuit Outline

Absolute Maximum Ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-Source Voltage VDS -30 V

Gate-Source Voltage VGS ±20 V

Continuous Drain Current @TA=25°C ID -4.5 A

Continuous Drain Current @TA=70°C ID -3.5 A

Pulsed Drain Current @VGS=10V (Notes 1, 2) IDM -20 A

TA=25°C 1.38 W

Maximum Power Dissipation (Note 3) TA=75°C PD 0.83 W

Operating Junction and Storage Temperature Tj, Tstg -55~+150

°C

Note : 1. Pulse width limited by maximum junction temperature.

2. Pulse width≤ 300μs, duty cycle≤2%.

3. Surface mounted on 1 in² copper pad of FR-4 board.

MTP5103N3 SOT-23

D

S

G：Gate G

S：Source

D：Drain

CYStech Electronics Corp.

Spec. No. : C400N3

Issued Date : 2011.11.28

Revised Date : 2012.04.18

Page No. : 2/8

MTP5103N3 CYStek Product Specification

Thermal Performance

Parameter Symbol Limit Unit

Thermal Resistance, Junction-to-Ambient Rth,ja 90 °C/W

Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad.

Electrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BVDSS -30 - - V VGS=0, ID=-250µA

VGS(th) -1.0 -1.4 -2.5 V VDS=VGS, ID=-250µA

IGSS - - ±100 nA VGS=±20V, VDS=0

IDSS - - -1 µA VDS=-24V, VGS=0

IDSS - - -10 µA VDS=-24V, VGS=0, Tj=125°C

- 41 50 ID=-4.5A, VGS=-10V

*RDS(ON) - 60 70

mΩ ID=-3.5A, VGS=-4.5V

*GFS - 4.3 - S VDS=-10V, ID=-4.5A

Dynamic

Ciss - 885 -

Coss - 86 -

Crss - 81 -

pF VDS=-10V, VGS=0, f=1MHz

*td(ON) - 8 -

*tr - 12 -

*td(OFF) - 30 -

*tf - 23 -

ns VDS=-15V, ID=-1A, VGS=-10V, RD=15Ω,

RG=6Ω

*Qg - 15 -

*Qgs - 3 -

*Qgd - 7 -

nC VDS=-15V, ID=-4.5A, VGS=-10V

Source-Drain Diode

*IS - - -4.5

*ISM - - -18

A

*VSD - - -1.2 V VGS=0V, IS=-1A

*trr - 32 - ns

*Qrr - 13.5 - nC

IF=-4.5A, dIF/dt=100A/μs

*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking

MTP5103N3 SOT-23

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel 5103

CYStech Electronics Corp.

Spec. No. : C400N3

Issued Date : 2011.11.28

Revised Date : 2012.04.18

Page No. : 3/8

MTP5103N3 CYStek Product Specification

Typical Characteristics

Typical Output Characteristics

0

5

10

15

20

25

012345678910

-VDS, Drain-Source Voltage(V)

-ID, Drain Current (A)

10V

9V

8V

7V

6V

5V

-

V

GS

=

2.5V

-VGS=3V

-VGS=3.5V

-VGS=4V

-VGS=4.5V

Brekdown Voltage vs Ambient Temperature

30

32

34

36

38

40

-75 -50 -25 0 25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

-BVDSS, Drain-Source Breakdown Voltage

(V)

ID=-250μA,

V

GS

=0V

Static Drain-Source On-State resistance vs Drain Current

10

100

1000

0.001 0.01 0.1 1 10 100

-ID, Drain Current(A)

RDS(on), Static Drain-Source On-State

Resistance(mΩ)

VGS=-3V

VGS=-2.5V

VGS=-10V

VGS=-4V

VGS=-4.5V

Reverse Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

024681

-IDR, Reverse Drain Current (A)

-VSD, Source-Drain Voltage(V)

0

Tj=25°C

Tj=150°C

VGS=0V

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

20

40

60

80

100

120

140

160

180

200

024681

0

Drain-Source On-State Resistance vs Junction Tempearture

20

25

30

35

40

45

50

55

60

65

70

75

80

85

90

-60 -20 20 60 100 140 180

Tj, Junction Temperature(°C)

RDS( ON), Static Drain-Source On-State

Resistance(mΩ)

VGS=-4.5V, ID=-4A

VGS=-10V, ID=-5A

-VGS, Gate-Source Voltage(V)

RDS( ON) , Static Drain-Source On-

State Resistance(mΩ)

ID=-4.5A

ID=-3.5A

CYStech Electronics Corp.

Spec. No. : C400N3

Issued Date : 2011.11.28

Revised Date : 2012.04.18

Page No. : 4/8

MTP5103N3 CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10

100

1000

10000

0.1 1 10 100

-VDS, Drain-Source Voltage(V)

Capacitance---(pF)

Coss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.8

1

1.2

1.4

1.6

1.8

2

2.2

-60 -40 -20 0 20 40 60 80 100 120 140 160

Tj, Junction Temperature(°C)

-VGS( th),Threshold Voltage-(V)

ID=-250uA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001 0.01 0.1 1 10

-ID, Drain Current(A)

GFS, Forward Transfer Admittance-(S)

VDS=-10V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

2

4

6

8

10

12

0246810121416

Qg, Total Gate Charge(nC)

-VGS, Gate-Source Voltage(V)

VDS=-15V

ID=-4.5A

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.01 0.1 1 10 100

-VDS, Drain-Source Voltage(V)

-ID, Drain Current (A)

DC

10ms

100ms

1ms

100μs

RDS( ON)

Limited

Maximum Drain Current vs JunctionTemperature

0

1

2

3

4

5

6

25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

-ID, Maximum Drain Current(A)

TA=25°C, VGS=-10V

CYStech Electronics Corp.

Spec. No. : C400N3

Issued Date : 2011.11.28

Revised Date : 2012.04.18

Page No. : 5/8

MTP5103N3 CYStek Product Specification

Typical Characteristics(Cont.)

Power Derating Curve

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0 20 40 60 80 100 120 140 160

TA, Ambient Temperature(℃)

PD, Power Dissipation(W)

Mounted on FR-4 board

with 1 in²

p

ad area

Transient Thermal Response Curves

0.01

0.1

1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

t1, Square Wave Pulse Duration(s)

Normalized Transient Thermal Resistance

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TC=PDM*ZθJC

(t)

4.RθJA=90°C/W

CYStech Electronics Corp.

Spec. No. : C400N3

Issued Date : 2011.11.28

Revised Date : 2012.04.18

Page No. : 6/8

MTP5103N3 CYStek Product Specification

Reel Dimension

Carrier Tape Dimension

CYStech Electronics Corp.

Spec. No. : C400N3

Issued Date : 2011.11.28

Revised Date : 2012.04.18

Page No. : 7/8

MTP5103N3 CYStek Product Specification

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds

Recommended temperature profile for IR reflow

Profile feature Sn-Pb eutectic Assembly Pb-free Assembly

Average ramp-up rate

(Tsmax to Tp) 3°C/second max. 3°C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

217°C

60-150 seconds

Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C

Time within 5°C of actual peak

temperature(tp) 10-30 seconds 20-40 seconds

Ramp down rate 6°C/second max. 6°C/second max.

Time 25 °C to peak temperature 6 minutes max. 8 minutes max.

Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp.

Spec. No. : C400N3

Issued Date : 2011.11.28

Revised Date : 2012.04.18

Page No. : 8/8

MTP5103N3 CYStek Product Specification

SOT-23 Dimension

*:Typical

Inches

Marking:

5103

HJ

K

D

A

L

G

V

C

B

3

2

1

S

Style : Pin 1.Gate 2.Source 3.Drain

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

Millimeters Inches Millimeters

DIM Min. Max. Min. Max.

DIM Min. Max. Min. Max.

A 0.1102 0.1204 2.80 3.04 J 0.0035 0.0071 0.09 0.18

B 0.0472 0.0669 1.20 1.70 K 0.0276 REF 0.70 REF

C 0.0335 0.0512 0.89 1.30 L 0.0374* 0.95*

D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1161 2.10 2.95

G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65

H 0.0004 0.0040 0.01 0.10

Notes : 1.Controlling dimension : millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material :

• Lead : Pure tin plated.

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

www.s-manuals.com