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www.DataSheet.co.kr NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG SOP-8 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30 14mΩ -11 G 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless O 100% UIS tested therwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V TA = 25 °C Continuous Drain Current Pulsed Drain Current TA = 70 °C 1 Avalanche Current Avalanche Energy L = 0.1mH TA = 25 °C Power Dissipation -11 ID -9 IDM -50 IAS -43 EAS 90 Operating Junction & Storage Temperature Range mJ 2.5 PD TA = 70 °C A W 1.6 Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS 1 THERMAL RESISTANCE SYMBOL Junction-to-Case Junction-to-Ambient TYPICAL MAXIMUM UNITS RθJc 25 °C / W RθJA 50 °C / W Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 VGS(th) VDS = VGS, ID = -250µA -1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V, TJ = 125 °C -10 Gate Threshold Voltage V -1.7 -3 nA µA Jun-22-2010 REV 1.3 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG SOP-8 Field Effect Transistor Drain-Source On-State 1 Resistance RDS(ON) 1 Forward Transconductance gfs Halogen-Free & Lead-Free VGS = -4.5V, ID = -9A 14 22 VGS = -10V, ID = -12A 9 14 VDS = -10V, ID = -12A 28 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg 2 Gate-Source Charge 2 Gate-Drain Charge 2 Turn-On Delay Time 2 Rise Time 2 Turn-Off Delay Time 2 VGS = 0V, VDS = -15V, f = 1MHz pF 449 349 VGS = 0V, VDS = 0V, f = 1MHz Ω 7.3 Qg(VGS=10V) 2 Total Gate Charge Fall Time 2510 48 Qg(VGS=4.5V) VDS = 0.5V(BR)DSS, VGS = -10V, 26 Qgs ID = -12A 7 Qgd 9 td(on) 12 tr VDS = -15V, 16 td(off) ID ≅ -1A, VGS = -10V, RGS = 6Ω 50 tf nC nS 100 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C) Continuous Current 1 Forward Voltage 1 2 IS VSD IF = IS, VGS = 0V -2.1 A -1.2 V Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH “P1403EVG”, DATE CODE or LOT # Jun-22-2010 REV 1.3 2 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG SOP-8 Field Effect Transistor Output Characteristics V GS = 10V On-Resistance VS Drain Current 0.040 V GS = 4.5V RDS(ON)ON-Resistance(OHM) -ID, Drain-To-Source Current(A) 50 40 V GS = 7V V GS = 3V 30 20 10 0 1 2 3 4 0.030 0.025 V GS = 4.5V 0.020 V GS = 10V 0.015 0.010 0.005 0 -VDS, Drain-To-Source Voltage(V) -ID , Drain-To-Source Current On-Resistance VS Gate-To-Source On-Resistance VS Temperature RDS(ON) x 1.6 RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) 0.035 5 0.05 0.04 0.03 0.02 0.01 ID = -12A 0 0 2 4 6 8 RDS(ON) x 1.4 RDS(ON) x 1.2 RDS(ON) x 1.0 RDS(ON) x 0.8 RDS(ON) x 0.6 RDS(ON) x 0.4 - 50 10 Transfer Characteristics 50 -VGS , Gate-To-Source Voltage(V) 40 30 20 T j =25° C 10 T j =125° C T j =-20° C 1.5 2.0 2.5 3.0 3.5 4.0 - 25 0 25 50 75 100 125 150 Gate charge Characteristics Characteristics 10 V DS= -10V 0 1.0 VGS = 10V ID = -12A TJ , Junction Temperature(˚C) -VGS, Gate-To-Source Voltage(V) -ID, Drain-To-Source Current(A) Halogen-Free & Lead-Free 4.5 8 ID = 12A VDS = 15V 6 4 2 0 5.0 0 -VGS, Gate-To-Source Voltage(V) 10 20 30 40 50 Qg , Total Gate Charge(nC) Jun-22-2010 REV 1.3 3 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG SOP-8 Field Effect Transistor Capacitance Characteristic Body Diode Forward Voltage VS Source current 3.00E-09 1 .0 E + 0 2 2.50E-09 1 .0 E + 0 1 CISS -IS , Source Current(A) C , Capacitance(pF) Halogen-Free & Lead-Free 2.00E-09 1.50E-09 f = 1MHz VGS = 0V 1.00E-09 5.00E-10 COSS CRSS TJ =150° C 1 .0 E + 0 0 1 .0 E - 0 1 TJ =25° C 1 .0 E -0 2 1 .0 E -0 3 1 .0 E -0 4 1 .0 E -0 5 0.00E+00 0 5 10 15 20 25 0 .2 0 .0 30 -VDS, Drain-To-Source Voltage(V) Safe Operating Area 0 .6 0 .8 1 .0 1 .2 Single Pulse Maximum Power Dissipation 100 500 100us 10 SINGLE PULSE RθJA = 50˚ ˚ C/W T A=25˚ ˚C 400 1ms ↓ 10ms 300 is Lim ited by RDS(ON) 1 Power(W) Oper ation in This Ar ea 100ms 1S 10S 0.1 NOTE : 1.V GS= 10V 2.T A=25˚ ˚C 3.RθJA = 50˚ ˚ C/W 200 100 DC 4.Single Pulse 0 0.01 0.1 1 10 0.0001 100 0.001 0.01 0.1 1 10 -VDS, Drain-To-Source Voltage(V) Transient Thermal Resistance Transient Thermal Response Curve r(t) , Normalized Effective -ID , Drain Current(A) 0 .4 -VSD, Source-To-Drain Voltage(V) T1 , Square Wave Pulse Duration[sec] Jun-22-2010 REV 1.3 4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG SOP-8 Field Effect Transistor Halogen-Free & Lead-Free Jun-22-2010 REV 1.3 5 Datasheet pdf - http://www.DataSheet4U.net/ www.s-manuals.com
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