Philips RF Manual 5th Edition APPENDIX BGA6489
User Manual: BGA6489
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Appendix RF Manual
5th edition
Product and design manual for RF Products
October 2004
Semiconductors
Philips Semiconductors
RF Manual
5th edition APPENDIX
Product and design manual for RF Products
Koninklijke Philips Electronics N.V. 2004
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner. The information presented in this document does not form part of any quotation or contract, is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: October 2004
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October 2004
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Philips Semiconductors
RF Manual
5th edition APPENDIX
Product and design manual for RF Products
Content appendix:
Application notes:
Appendix A:
Appendix B:
Appendix C:
BGA2715-17 general purpose
wideband amplifier,
50 Ohm Gain Blocks
BGA6x89 general purpose
medium power amplifier,
50 Ohm Gain Blocks
Introduction into the
GPS Front-End
page: 4 - 8
page: 9 -14
page: 15 -18
Reference work:
Appendix D:
Appendix E:
Appendix F:
2.4GHz Generic Front-End
reference design
RF Application-basics
RF Design-basics
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RF Manual Appendix
page: 19 - 25
page: 26 - 29
page: 30 - 34
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5th edition APPENDIX
Product and design manual for RF Products
Appendix A: BGA2715-17 general purpose
wideband amplifiers, 50 Ohm Gain Blocks
APPLICATION INFORMATION BGA2715-17
Figure 2 shows a typical application circuit for the BGA2715-17 MMIC.
The device is internally matched to 50 O, and therefore does not need any external
matching. The value of the input and output DC blocking capacitors C2 and C3 should
not be more than 100 pF for applications above 100 MHz. However, when the device is
operated below 100 MHz, the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to
the MMIC.
The PCB top ground plane, connected to the pins 2, 4 and 5 must be as close as
possible to the MMIC, preferably also below the MMIC. When using via holes, use
multiple via holes, as close as possible to the MMIC.
Application examples
Vs
C1
Vs
RF in
RF input
RF out
C2
C3
GND1
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RF Manual Appendix
RF output
GND2
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Philips Semiconductors
5th edition APPENDIX
Product and design manual for RF Products
Mixer
to IF circuit
or demodulator
from RF circuit
wideband
amplifier
Oscillator
The MMIC is very suitable as IF amplifier in e.g. LNB's. The exellent wideband
characteristics make it an easy building block.
Mixer
to IF circuit
or demodulator
antenna
LNA
wideband
amplifier
Oscillator
As second amplifier after an LNA, the MMIC offers an easy matching, low noise
solution.
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MMIC wideband amplifier
BGA2715
FEATURES
FEATURES
• Internally matched to 50 Ohms
• Wide frequency range, 3 dB bandwidth = 3.3 GHz
• Flat 22 dB gain, ± 1 dB up to 2.8 GHz
• -8 dBm output power at 1 dB compression point
• Good linearity for low current, OIP3 = 2 dBm
• Low second harmonic, -30 dBc at PDrive = - 40 dBm
• Unconditionally stable, K
PINNING
PIN
DESCRIPTION
V
1
S
2,5
GND 2
3
RF out
4
GND 1
6
RF in
1
APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose
6
5
4
6
1
2
3
3
4
2,5
Top view
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a
6-pin SOT363 plastic SMD package.
Marking code: B6-
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
Vs
Is
|S21|2
NF
PL sat
PARAMETER
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
CONDITIONS
f = 1 GHz
f = 1 GHz
f = 1 GHz
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RF Manual Appendix
TYP.
5
4.3
22
2.6
-4
MAX.
6
-
UNIT
V
mA
dB
dB
dBm
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MMIC wideband amplifier
BGA2716
FEATURES
FEATURES
• Internally matched to 50 Ohms
• Wide frequency range, 3 dB bandwidth = 3.2 GHz
• Flat 23 dB gain, ± 1 dB up to 2.7 GHz
• 9 dBm output power at 1 dB compression point
• Good linearity for low current, OIP3 = 22 dBm
• Low second harmonic, -38 dBc at PLoad = - 5 dBm
• Unconditionally stable, K > 1.2
PINNING
PIN
1
2,5
3
4
6
DESCRIPTION
VS
GND 2
RF out
GND 1
RF in
1
APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose
6
5
4
6
1
2
3
3
4
2,5
Top view
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a
6-pin SOT363 plastic SMD package.
Marking code: B7-
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
Vs
Is
|S21|2
NF
PL sat
PARAMETER
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
CONDITIONS
f = 1 GHz
f = 1 GHz
f = 1 GHz
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RF Manual Appendix
TYP.
5
15.9
22.9
5.3
11.6
MAX.
6
-
UNIT
V
mA
dB
dB
dBm
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MMIC wideband amplifier
BGA2717
FEATURES
FEATURES
• Internally matched to 50 Ohms
• Wide frequency range, 3 dB bandwidth = 3.2 GHz
• Flat 24 dB gain, ± 1 dB up to 2.8 GHz
• -2.5 dBm output power at 1 dB compression point
• Good linearity for low current, OIP3 = 10 dBm
• Low second harmonic, -38 dBc at PDrive = - 40 dBm
• Low noise figure, 2.3 dB at 1 GHz.
• Unconditionally stable, K > 1.5
PINNING
PIN
1
2,5
3
4
6
GND 2
RF out
GND 1
RF in
1
6
APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose
DESCRIPTION
VS
5
4
6
1
2
3
3
4
2,5
Top view
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a
6-pin SOT363 plastic SMD package.
Marking code: 1B-
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
Vs
Is
|S21|2
NF
PL sat
PARAMETER
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
CONDITIONS
f = 1 GHz
f = 1 GHz
f = 1 GHz
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RF Manual Appendix
TYP.
5
8.0
24
2.3
1
MAX.
6
-
UNIT
V
mA
dB
dB
dBm
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Product and design manual for RF Products
Appendix B: BGA6x89 general purpose
medium power ampl., 50 Ohm Gain Blocks
Application note for the BGA6289
Application note for the BGA6289.
(See also the objective datasheet BGA6289)
Rbias
VS
CA
2
50 Ohm
microstrip
LC
CB
CB
3
CD
1
50 Ohm
microstrip
VD
2
Figure 1 Application circuit.
DESCRIPTION
COMPONENT
Cin Cout
multilayer ceramic chip
capacitor
CA
Capacitor
CB
multilayer ceramic chip
capacitor
CC
multilayer ceramic chip
capacitor
Lout
SMD inductor
Vsupply
Supply voltage
Rbias =RB
SMD resistor 0.5W
VALUE
68 pF
DIMENSIONS
0603
1 µF
1 nF
0603
0603
22 pF
0603
22 nH
6V
27 Ohm
0603
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Table 1 component values placed on the demo board.
CA is needed for optimal supply decoupling .
Depending on frequency of operation the values of C in Cout and L out can be changed
(see table 2).
Frequency (MHz)
500
800
1950 2400
3500
Cin Cout
220 pF 100 pF 68 pF 56 pF
39 pF
CA
1 µF
1 µF
1 µF
1 µF
1 µF
CB
1 nF
1 nF
1 nF
1 nF
1 nF
CC
100 pF 68 pF
22 pF 22 pF
15 pF
Lout
68 nH 33 nH 22 nH 18 nH 15 nH
Table 2 component selection for different frequencies.
COMPONENT
Vsupply depends on Rbias used. Device voltage must be approximately 4 V (i.e. device
current = 80mA).
With formula 1 it is possible to operate the device under different supply voltages.
If the temperature raises the device will draw more current, the voltage drop over Rbias
will increase and the device voltage decrease, this mechanism provides DC stability.
Measured small signal performance.
Small signal performance BGA6289
20.00
15.00
10.00
5.00
0.00
0.00
-5.00
S11 [dB]
500.00
1000.00
1500.00
2000.00
2500.00
3000.00
S12 [dB]
S21 [dB]
S22 [dB]
-10.00
-15.00
-20.00
-25.00
-30.00
f [MHz]
Figure 2 Small signal performance.
Measured large signal performance.
f
850 MHz
2500 MHz
IP3out
31 dBm
25 dBm
PL1dB
18 dBm
16 dBm
NF
3.8
4.1
Table 3 Large signal performance and noise figure.
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Application note for the BGA6489
Application note for the BGA6489.
(See also the objective datasheet BGA6489)
Rbias
VS
CA
2
50 Ohm
microstrip
LC
CB
CB
3
CD
1
50 Ohm
microstrip
VD
2
Figure 1 Application circuit.
DESCRIPTION
VALUE
COMPONENT
Cin Cout
multilayer ceramic chip
68 pF
capacitor
CA
Capacitor
1 µF
CB
multilayer ceramic chip
1 nF
capacitor
CC
multilayer ceramic chip
22 pF
capacitor
Lout
SMD inductor
22 nH
Vsupply
Supply voltage
8V
Rbias =RB
SMD resistor 0.5W
33 Ohm
Table 1 component values placed on the demo board.
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DIMENSIONS
0603
0603
0603
0603
0603
----
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Product and design manual for RF Products
CA is needed for optimal supply decoupling .
Depending o n frequency of operation the values of C in Cout and L out can be changed
(see table 2).
Frequency (MHz)
COMPONENT
500
800
1950 2400
3500
Cin Cout
220 pF 100 pF 68 pF 56 pF
39 pF
CA
1 µF
1 µF
1 µF
1 µF
1 µF
CB
1 nF
1 nF
1 nF
1 nF
1 nF
CC
100 pF 68 pF
22 pF 22 pF
15 pF
Lout
68 nH 33 nH 22 nH 18 nH 15 nH
Table 2 component selection for different frequencies.
Vsupply depends on Rbias used. Device voltage must be approximately 5.1 V (i.e. device
current = 80mA).
With formula 1 it is possible to operate the device under different supply voltages.
If the temperature raises the device will draw more current, the voltage drop over Rbias
will increase and the device voltage decrease, this mechanism provides DC stability.
Measured small signal performance.
Figure 2 Small signal performance.
Small signal performance BGA6489
30.00
20.00
10.00
0.00
0.00
500.00
1000.00
1500.00
2000.00
2500.00
3000.00
S11
S12
S21
S22
-10.00
-20.00
-30.00
-40.00
f [MHz]
Measured large signal performance.
f
850 MHz
IP3out
33 dBm
PL1dB
20 dBm
NF
3.1 dB
2500 MHz
27 dBm
17 dBm
3.4 dB
Table 3 Large signal performance and noise figure.
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Application note for the BGA6589
The Demo Board with medium power wide-band gainblock BGA6589.
(See also the objective datasheet BGA6589)
Rbias
VS
CA
2
50 Ohm
microstrip
LC
CB
CB
3
CD
1
50 Ohm
microstrip
VD
2
Application circuit.
COMPONEN
DESCRIPTION
VALUE
T
Cin Cout
multilayer ceramic chip
68 pF
capacitor
CA
Capacitor
1 µF
CB
multilayer ceramic chip
1 nF
capacitor
CC
multilayer ceramic chip
22 pF
capacitor
LC
SMD inductor
22 nH
Vsupply
Supply voltage
7.5 V
Rbias =RB
SMD resistor 0.5W
33 Ohm
Table 1 component values placed on the demo board.
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DIMENSIONS
0603
0603
0603
0603
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CA is needed for optimal supply decoupling .
Depending on frequency of operation the values of C in Cout and L out can be changed
(see table 2).
Frequency (MHz)
COMPONENT
500
800
1950 2400
3500
Cin Cout
220 pF 100 pF 68 pF 56 pF
39 pF
CA
1 µF
1 µF
1 µF
1 µF
1 µF
CB
1 nF
1 nF
1 nF
1 nF
1 nF
CC
100 pF 68 pF
22 pF 22 pF
15 pF
Lout
68 nH 33 nH 22 nH 18 nH 15 nH
Table 2 component selection for different frequencies.
Vsupply depends on Rbias used. Device voltage must be approximately 4.8 V (i.e. device
current = 83mA).
With formula 1 it is possible to operate the device under different supply voltages.
If the temperature raises the device will draw more current, the voltage drop over Rbias
will increase and the device voltage decrease, this mechanism provides DC stability.
Measured small signal performance.
Small signal performance BGA6589
30.00
20.00
10.00
0.00
0.00
-10.00
500.00
1000.00
1500.00
2000.00
2500.00
-20.00
3000.00
S11
S12
S21
S22
-30.00
-40.00
-50.00
f [MHz]
Figure 2 Small signal performance.
Measured large signal performance.
f
850 MHz
IP3out
33 dBm
PL1dB
21 dBm
NF
3.1 dB
2500 MHz
32 dBm
19 dBm
3.4 dB
Table 3 Large signal performance and noise figure.
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Appendix C: Introduction GPS Front-End
Due to shrinking of the mechanical dimensions and attractive pricing of the
semiconductors, GPS applications got very popular in the last years. A GPS navigation
system is based on measuring and evaluating RF signals transmitted by the GPS
satellites. There are at least 24 active satellites necessary in a distance of 20200km
above the Earth surface. All sat’s transmits their civil useable L1 signal at the same
time down to the user on 1575.42MHz in the so-called microwave L-band. Each
satellite have it’s own C/A code (Coarse Acquisition) .
The GPS Satellites are 20020km far from the Earth surface
The L1 carrier based GPS system does use :
L1
L2
L3
L4
L5
This satellite identifier C/A code is Pseudo
Randomly and appears like Noise in the
frequency spectrum (=PRN C/A code). The L1
carrier is BPSK (Binary Phase Shift Keying)
modulated by the C/A data code, by the
navigation data message and the encrypted
P(Y)-code. Due to C/A’s PRN modulation, the
carrier is DSSS modulated (Direct Sequence
Spread Spectrum modulation). This DSSS
spreads the former bandwidth signal to a satellite
internal limited width of 30MHz. A GPS receiver
must know the C/A code of each satellite for
selecting it out of the antennas kept RF
spectrum. Because a satellite is selected out of
the data stream by the use of an identification
code, GPS is a CDMA-System (Code Division
Multiplex Access). This RF signal is transmitted
with enough power to ensure a minimum signal
CDMA - DSSS - BPSK modulation
Available GPS carrier frequencies
Link 1 carrier frequency
1575.42 MHz
Link 2 carrier frequency
1227.6 MHz
Link 3 carrier frequency
1381.05 MHz
Link 4 carrier frequency
1379.913 MHz
Link 5 carrier frequency
1176.45 MHz
The U.S. navigation system GPS was originally started by the U.S. military in 1979. It will be updated in
order to supply the carriers L2 & L5 for increasing civil performances together with the standard L1 RF
carrier. GPS uses BPSK modulation on the L1 carrier and, beginning with launch of the modernized
Block IIR the L2 carrier. The L5 signal that will appear with the Block IIF satellites in 2006 will have use of
the QPSK modulation (Quadrature Phase Shift Keying).
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The performances overview of the actual and the next up-coming GPS system:
Topic
Used Codes
Need of a
second
reference base
station
Resolution
Comments
---
Today basic
positioning
C/A Code on L1
No
Before May 2000: 25100m Today 6-10m
(resolution controlled
by US)
Tomorrow basic
positioning
C/A Code on L1
L2C Code on L2
New Code on L5
No
1-5m
Eliminates need for
costly DGPS in many
non-safety
applications.
Yes
2cm
max. distance too
reference 10km
2cm
max. distance too
reference 100km;
faster recovery
following signal
interruption
Today advance
positioning
Tomorrow
advanced
positioning
L1 Code and
Carrier
L2 Carrier
Data Link
L1 Code and
Carrier
L2 Code and
Carrier
L5 Code and
Carrier
Data Link
Yes
The spread spectrum modulated signals
field strength is very weak and cause a
negative SNR in the receiver input
circuit caused by the Nyquist Noise
determined by the Analog Front-End IF
bandwidth:
Satellite
C/A
Channel
Generation
Loop peek
L1
-158.5dBW
II/IIA/IIR
L2
-164.5dBW
L1
-158.5dBW
IIR-M/IIF
L2
-160.0dBW
Competition Satellite based navigation systems:
(
dBW = 10 log P 1W
)
In 2004 will be start the European navigation system EGNOS. News forecasted the European system
Galileo for 2008. GLONASS is a Russian Navigation System.
Comparison of the front-ends used in a GPS and in a GLONASS receiver:
All GPS satellites use the same L1 frequency of 1575.42MHz, but different C/A codes, so a single frontend may be used. To achieve better sky coverage and accelerated operation, more than one antenna
can be used. In this case, separate front-ends can be used. Using switches based on Philips’ PIN-diodes
makes it possible to select the antenna with the best signal in e.g. automotive applications for operation
in a city.
Each GLONASS satellite will use a different carrier frequency in the range of 1602.5625MHz to
1615.5MHz, with 562.5KHz spacing, but all with the same spreading code. The normal method for
receiving these signals uses of several parallel working front -ends, perhaps with a common first LNA and
mixer, but certainly with different final local oscillators and IF mixer.
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Application examples:
-
Personal Navigations
Railroads
Recreation, walking-tour
Off shore Drilling
Satellite Ops. Ephemeris Timing
Surveying & Mapping
Network Timing,
Synchronization
Fishing & Boat
Arm Clocks
Laptops and Palms
Mobiles
Child safety
Car navigation systems
Fleet management systems
Telecom Time reference
High way toll system
First-Aid call via mobiles
GPS Marked & Applications
Marked of GPS Applications
OEM
ics
ion
Av
n
atio
vig
a
rN
Ca
y
rine ilitar
Ma
M
Tracking /
Machine
Control
Survey /
Mapping
Consumer
References:
- Office of Space Commercialization, United States Department of Commerce
- U.S. Coast Guard Navigation Center of Excellence
- NAVSTAR Global Positioning System
- NAVSTAR GPS USER EQUIPMENT INTRODUCTION
- Royal school of Artillery, Basic science & technology section, BST, gunnery careers courses, the
NAVSTAR Global Positioning System
,…
Simplified block diagram of a typically GPS receiver analog front-end IC
Typically, an integrated double superheat-receiver technology is used in the analog rail. The under
sampling analog to digital converter (ADC) is integrated in the analog front-end IC with a resolution of 1
to 2bit. Due to under sampling, it acts as the third mixer for down converting into to the digital stream IF
band. Behind this ADC, the digital Baseband Processor is located. Till this location, the SNR of the
received satellite signals is negative. In the Baseband Processor, the digital IF signal is parallel
processed in several C/A correlators and NAV-data code discriminators. During this processing, the
effective Nyquest Bandwidth is shrink down to few Hertz, dispreading and decoding of the GPS signal is
made causing a positive SNR. Because typically front-end ICs are designed in a high-integrated low
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power relative noisy semiconductor process, there is a need of an external Low-Noise-Amplifier (LNA )
combined with band pass-filters. Because the available GPS IC chipsets on the market differ in their
electrically performances like, Gain, Noise Figure (NF), linearity and sensitivity, therefore one and twostage discrete front-end amplifiers are used. The numbers of filters in the front-end vary with the needs
on the applications target environment, costs and sizes. The processed number of GPS carriers as well
as the navigation accuracy does determine the min. allowed bandwidth of the analog-front end rail.
Philips Semiconductors offer MMICs with internal 50Ω matches at the input and output (I/O) and without
internal matching. The internal matched broadband MMICs typically need an output inductor for DC
biasing and DC decoupling capacitors at the amplifier I/O. The internal non-matched devices need I/O
matching network typically made by lumped LC circuits in a L-arrangement. This gives additionally
selectivity. Another advantage of this MMIC is the integrated temperature compensation in contrast to a
transistor. In a system, typically the first amplifier’s noise figure is very important. E.g. the BGU2003 SiGe
MMIC offers both (NF+IP3) with a good quality. It’s Si made brother BGA2003 come with lower amount
of IP3 and NF. IC chip-sets with a need of high front-end gain made by one MMIC may be able to use
BGM1011 or BGM1013. Two-stage design e.g. will use BGA2001, BGA2011 eventually combined with
BGA2748 or BGA2715 or BGA2717. Some examples of configuration for an L1-carrier LNA are shown in
the next two tables.
Single Front-End amplifier:
Amplifier
BFG
325W
BFU
540
BGU
2003
BGM
1013
BGM
1011
BFG
410W
BGA
2011
BGA
2001
BGA
2003
BGA
2715
BGA
2748
Gain
NF
14dB
1dB
20dB
0.9dB
14dB
1.1dB
34dB
4.7dB
35dB
4.7dB
18dB
1.1dB
12dB
1.5dB
14dB
1.3dB
14dB
1.8dB
23.2dB
2.7dB
21dB
2dB
+24dBm
External
+21dBm
External
+21dBm
External
+21dBm
Internal
+20dBm
Internal
+15dBm
External
+10dBm
External
+1dBm
Internal
-1.6dBm
Internal
IP3o(out)
Matching
+9.5dBm +9.2dBm
External External
Two-cascaded circuit Front-End amplifier:
st
1 Stage BFG325W BFG410W BFG410W BFU540 BFG325W BGA2011 BGU2003 BGA2011 BGA2003 BGA2011
2nd Stage
BFU540
BFU540 BGU2003 BFG410W BFG410W BGA2011 BGA2001 BGA2715 BGA2715 BGA2748
Cascaded
31dB
35dB
29dB
35dB
29dB
21dB
25dB
32.2dB
34dB
30dB
Gain
Cascaded 1.19dB
1.25dB
1.32dB
1.11dB
1.28dB
2dB
1.5dB
2.5dB
2.6dB
2.2dB
NF
Cascaded +21dBm
+21dBm
+21dBm
+15dBm
+15dBm
+10dBm +9.5dBm
+1dBm
+1dBm
-1.6dBm
IP3o
Note:
2
[1] Gain=|S21| ; data @ 1.8GHz or the next one / approximated, found in the data sheet /
diagrams
th
[2] For cascaded amplifier equations referee to e.g. 4 Edition RF Manual Appendix, 2.4GHz
Generic Front-End reference design
[3] The evaluated cascaded amplifier includes an example interstage filter with 3dB insertion loss
(NF=+3dB; IP3=+40dBm).
[4] MMICs: BGAxxxx, BGMxxxx, BGUxxxx Transistors: BFGxxx, BFUxxx
4322 252 06394
RF Manual Appendix
© Koninklijke Philips Elec tronics N.V.
October 2004
18 of 35
Philips Semiconductors
RF Manual
5th edition APPENDIX
Product and design manual for RF Products
Appendix D: 2.4GHz Generic Front-End
Reference design
Complete design description in previous RF Manual (4 th edition),
including datasheet. Downloadable via RF Manual website:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual
Description of the generic Front-End
This note describes the design and realization of a 2.4GHz ISM front end (IndustrialScientific-Medical). Useful for wireless communication applications, LAN and e.g.
Video/TV signal transmission. It covers power amplifier (PA) design in the Tx path, Low
Noise Amplifier (LNA) design in the Rx path and RF multiplexing towards the antenna.
Though actual IC processes enable front-end integration to a certain extend, situations
do exists were dedicated discrete design is required, e.g. to realize specific output
power. On top of the factual design, attention is paid to interfacing the front end to
existing Philips IC. More then trying to fit a target application, our intention here is to
illustrate generic discrete Front end design methodology.
BGA6589
Reference
Board
BAP51-02
BGU2003
Figure1: The position of the LNA inside the 2.4GHz Generic Front-End
§ The job of the Front-End in an application
The board supports half duplex operation. This means the TX and RX operation are not
possible at the same time. The time during TX and RX activity are so called time slots
or just slots. The order of the TX and RX slots is specific for the selected standard.
Special handshaking activities consist of several TX and RX slots put together in to the
so-called time-frame or just frame. The user points / access points linked in this
4322 252 06394
RF Manual Appendix
© Koninklijke Philips Elec tronics N.V.
October 2004
19 of 35
Philips Semiconductors
RF Manual
5th edition APPENDIX
Product and design manual for RF Products
wireless application must follow the same functionality of slots, same order of frames
and timing procedure (synchronization). These kind of issues must be under the
control of specific rules (standard) normally defined by Institutes or Organization like
ETSI, IEEE, NIST, FCC, CEPT, and so on.
Applications for the Reference Board
Some application ideas for the use of the Generic Front-End Reference Board
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
§
2.4GHz WLAN
Wireless video, TV and remote control signal transmission
PC to PC data connection
PC headsets
PC wireless mouse, key board, and printer
Palm to PC, Keyboard, Printer connectivity
Supervision TV camera signal transmission
Wireless loudspeakers
Robotics
Short range underground walky-talky
Short range snow and stone avalanche person detector
Key less entry
Identification
Tire pressure systems
Garage door opener
Remote control for alarm-systems
Intelligent kitchen (cooking place, Microwave cooker and washing machine operator reminder)
Bluetooth
DSSS 2.4GHz WLAN (IEEE802.11b)
OFDM
2.4GHz WLAN (IEEE802.11g)
Access Points
PCMCIA
PC Cards
2.4GHz Cordless telephones
Wireless pencil as an input for Palms and PCs
Wireless hand scanner for a Palm
Identification for starting the car engine
Wireless reading of gas counters
Wireless control of soft-drink /cigarette/snag - SB machine
Communication between bus/taxi and the stop lights
Panel for ware house stock counting
Printers
Mobiles
Wireless LCD Display
Remote control
Cordless Mouse
Automotive, Consumer, Communication
Please note:
The used MMICs and PIN diodes can be used in other frequency ranges e.g. 300MHz to 3GHz for
applications like communication, networking and ISM too.
4322 252 06394
RF Manual Appendix
© Koninklijke Philips Elec tronics N.V.
October 2004
20 of 35
Philips Semiconductors
RF Manual
5th edition APPENDIX
Product and design manual for RF Products
Selection of Applications in the 2.4GHz environment
Standardization name/
issue
Application
Start frequency
Stop Frequency
Centre
frequency
Bluetooth; 1Mbps
IEEE802.15.1
NUS/EU=2402MHz
(All)=2402MHz
NUS/EU=2480MHz
(All)=2495MHz
2442.5MHz
WiMedia , (802.15.3a@3.1- 10.6GHz)
IEEE802.15.3 (camera,
video)
2.4GHz
2.49GHz
2.45GHz
ETSI
FDD Uplink (D)
FDD Downlink (D)
US=2402MHz
EU=2412MHz
2400 MHz
≈1920
≈2110
US=2480MHz
EU=2472MHz
2483MHz
≈1980
≈2170
TDD (D)
≈1900
≈2024
2400MHz
2483.5MHz
2441.5MHz
Exact Frequency
range depending on
country & system
supplier
2441.75MHz
ZigBee; 1000kbps@2450MHz
Other Frequency(868; 915)MHz
DECT@ISM
IMT-2000 =3G; acc., ITU, CEPT, ERC
ERC/DEC/(97)07; ERC/DEC/(99)25
(=UMTS, CDMA2000, UWC-136, UTRAFDD, UTRA-TDD)
USA - ISM
IEEE802.15.4
2441MHz
Bandwidth-MHz/
Channel SpacingMHz
NUS/EU=78/1MHz
(All)=93/1MHz
US=83/4MHz
EU=60/4
83/
(TDD, FDD; WCDMA,
TD-CDMA);
paired 2x60MHz (D)
non paired 25MHz (D)
83.5/
83/FHSS=1MHz;
DSSS=25MHz
Wireless LAN; Ethernet; (5.2; 5.7)GHz
IEEE802.11; (a, b, …)
2400MHz
2483MHz
2441.5MHz
Wi-Fi; 11-54Mbs; (4.9-5.9)GHz
RFID
Wireless LAN; 11Mbps
Wireless LAN; 54Mbps
WPLAN
IEEE802.11b; (g, a)
ECC/SE24
IEEE802.11b
IEEE802.11g
NIST
2400MHz
2446MHz
2412MHz
2483MHz
2454MHz
2462MHz
2441.5MHz
2.45GHz
2437MHz
2400MHz
NUS/EU=2402MHz
(All)=2402
NUS/EU=2480MHz
(All)=2495
ERC, CEPT Band Plan
2400MHz
2450MHz
2425MHz
50/
acc. CEPT Austria regulation
acc. CEPT Austria regulation
FCC
Amateur Radio Satellite UO11
Amateur Radio Satellite AO16
Amateur Radio Satellite DO17
Loral, Qualcomm
Satellite; Supplier Ellipsat
Satellite; Supplier
Constellation
Satellite; Supplier TRW
Satellite
tracking data link for rocket
tracking data link for rocket
700KW Klystron TX
US FAA/DoD ASR -11
used in U.S. DASR program
2400MHz
2400MHz
2390MHz
2450MHz
2450MHz
2450MHz
2425MHz
2425MHz
50/
50/
60/
HomeRF; SWAP/CA, 0.8-1.6Mbps
Fixed Mobile; Amateur Satellite; ISM, SRD,
RLAN, RFID
Fixed RF transmission
MOBIL RF; SRD
Amateur Radio
UoSAT-OSCAR 11, Telemetry
AMSAT- OSCAR 16
DOVE-OSCAR 17
Globalstar, (Mobile Downlink)
Ellipso, (Mobile Downlink)
Aries, (Mobile Downlink) (now Globalstar?)
Odyssey, (Mobile Downlink)
Orbcomm Satellite (LEO) eg. GPSS-GSM
Ariane 4 and Ariane 5 (ESA, Arianespace)
Atlas Centaur eg. carrier for Intelsat IVA F4
J.S. Marshall Radar Observatory
Raytheon ASR -10SS Mk2 Series S-Band
Solid-State Primary Surveillance Radar
Phase 3D; Amateur Radio Satellite; 146MHz,
436MHz, 2400MHz
Apollo 14-17; NASA space mission
ISS; (internal Intercom System of the ISS
station)
MSS Downlink
Abbreviations:
NIST
WPLAN
WLAN
ISM
LAN
IEEE
SRD
RLAN
ISS
IMT
MSS
W-CDMA
GMSK
UMTS
UWC
MSS Downlink
78/1MHz, 3.5MHz
93/1MHz, 3.5MHz
2401.5MHz
2401.1428MHz
2401.2205MHz
2483.5MHz
2483.5MHz
2500MHz
2500MHz
2483.5MHz
2500MHz
2483.5MHz
2500MHz
2700
S-Band
2250,5MHz
2206MHz
2210,5MHz
S-Band
S-Band Radar
≈2400MHz
2900
AMSAT; 250Wpep TX
S-Band
transponder experiments
S-Band
Space
UMTS
56/
2.4KHz, SSB
2.4GHz
2170
2200
European Radio communication Committee (ERC) within the European Conference of Postal and Telecommunication
Administration (CEPT)
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
National Institute of Standards and Technology
Wireless Personal Area Networks
Wireless Local Area Networks
Industrial Scientific Medical
Local Area Network
Institute of Electrical and Electronic Engineers
Short Range Device
Radio Local Area Network
International Space Station
International mobile Telecommunications at 2000MHz
Mobile Satellite Service
Wideband-CDMA
Gaussian Minimum Shift Keying
Universal Mobile Telecommunication System
Universal Wireless Communication
Mobile Satellite Service of UMTS
RFID
OSCAR
FHSS
DSSS
DECT
NUS
EU
ITU
ITU-R
(D)
TDD
FDD
TDMA
CDMA
2G
3G
4322 252 06394
RF Manual Appendix
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
Radio Frequency Identification
Orbit Satellite Carry Amateur Radio
Frequency Hopping Spread Spectrum
Direct Sequence Spread Spectrum
Digital Enhanced Cordless Telecommunications
North America
Europe
International Telecommunications Union
ITU Radio communication sector
Germany
Time Division Multiplex
Frequency Division Multiplex
Time Division Multiplex Access
Code Division Multiplex Access
Mobile Systems GSM, DCS
IMT-2000
© Koninklijke Philips Elec tronics N.V.
October 2004
21 of 35
Philips Semiconductors
RF Manual
5th edition APPENDIX
Product and design manual for RF Products
Schematic
Figure 4: Schematic of the Reference Board
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October 2004
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RF Manual
Philips Semiconductors
5th edition APPENDIX
Product and design manual for RF Products
Part List
Part
Number
Value
Size
Function / Short expl anation
IC1
IC2
Q1
Q2
Q3
Q4
D1
D2
D3
D4
D5
D6
D7
D8
D9
BGU2003
BGA6589
PBSS5140T
BC847BW
BC857BW
BC847BW
BAP51-0 2
BAP51-0 2
LYR971
LYR971
LYR971
BZV55-B5V1
BZV55-C10
BZV55-C3V6
BZV55-C3V6
SOT363
SOT89
SOT23
SOT323
SOT323
SOT323
SOD523
SOD523
0805
0805
0805
SOD80C
SOD80C
SOD80C
SOD80C
LNA-MMIC
TX-PA -MMIC
TX PA-standby control
Drive of D3
SPDT switching
PA logic level compatibility
SPDT- TX; series part of the PIN diode switch
SPDT-RX; shunt part of the PIN diode switch
LED, yellow, RX and bias current control of IC1
LED, yellow; TX
LED, yellow; SPDT; voltage level shifter
Level shifting for being 3V/5V tolerant
Board DC polarity & over voltage protection
Board DC polarity & over voltage protection
Board DC polarity & over voltage protection
R1
150 Ω
0402
SPDT bias
R2
1k8
0402
LNA MMIC current CTRL
R3
optional
0402
L2 resonance damping; optional
R4
47 Ω
0402
LNA MMIC collector bias
R5
270 Ω
0402
RX LED current adj.
R7
39k
0402
Q3 bias SPDT
Manufacturer
R8
150 Ω
0805
PA-MMIC collector current adjust and
temperature compensation
R9
39k
0402
Helps switch off of Q1
R10
2k2
0402
Q1 bias PActrl
R11
1kΩ
0402
LED current adjust; TX-PA
R12
82k
0402
Q2 drive
R13
150 Ω
0805
PA-MMIC collector current adjust
R14
150 Ω
0805
PA-MMIC collector current adjust
R15
4k7
0402
Improvement of SPDT-Off
R16
100k
0402
PActrl; logic level conversion
R17
47k
0402
PActrl; logic level conversion
L1
L2
L3
L4
L5
C1
22nH
1n8
8n2
18nH
6n8
1nF
0402
0402
0402
0402
0402
0402
SPDT RF blocking for biasing
LNA output matching
PAout Matching
LNA input match
PA input matching
medium RF short for SPDT bias
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
OSRAM
OSRAM
OSRAM
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Yageo RC0402
Vitrohm512
Yageo RC0402
Vitrohm512
--Yageo RC0402
Vitrohm512
Yageo RC0402
Vitrohm512
Yageo RC0402
Vitrohm512
Yageo RC0805
Vitrohm503
Yageo RC0402
Vitrohm512
Yageo RC0402
Vitrohm512
Yageo RC0402
Vitrohm512
Yageo RC0402
Vitrohm512
Yageo RC0805
Vitrohm503
Yageo RC0805
Vitrohm503
Yageo RC0402
Vitrohm512
Yageo RC0402
Vitrohm512
Yageo RC0402
Vitrohm512
Würth Elektronik, WE-MK
Würth Elektronik, WE-MK
Würth Elektronik, WE-MK
Würth Elektronik, WE-MK
Würth Elektronik, WE-MK
Murata, X7R
C2
6p8
0402
medium RF short for SPDT bias
Murata, C0G
C3
6p8
0402
Antenna DC decoupling
Murata, C0G
C4
2p2
0402
RF short SPDT shunt PIN
Murata, C0G
C5
2p7
0402
DC decoupling LNA input + match
Murata, C0G
C6
4p7
0402
RF short out put match
Murata, C0G
C7
1p2
0402
Murata, C0G
C8
2u2/10V
0603
C9
C10
100nF/16V
22pF
0402
0402
LNA output matching
Removes the line ripple together with R8-R14
from
PA supply rail
Ripple rejection PA
DC decoupling PA input
C11
6p8
0402
RF short-bias PA
Murata, C0G
C12
1nF
0402
PA, Supply RF short
Murata, X7R
4322 252 06394
RF Manual Appendix
Murata, X5R
Murata, Y5V
Murata, C0G
Order Code
Order
source
BGU2003
BGA6589
PBSS5140T
BC847BW
BC857BW
BC847BW
BAP51-0 2
BAP51-0 2
67S5126
67S5126
67S5126
BZV55-B5V1
BZV55-C10
BZV55-C3V6
BZV55-C3V6
PHL
PHL
PHL
PHL
PHL
PHL
PHL
PHL
Bürklin
Bürklin
Bürklin
PHL
PHL
PHL
PHL
26E558
Bürklin
26E584
Bürklin
optional
26E546
Bürklin
26E564
Bürklin
26E616
Bürklin
11E156
Bürklin
26E616
Bürklin
26E586
Bürklin
26E578
Bürklin
26E624
Bürklin
11E156
Bürklin
11E156
Bürklin
26E594
Bürklin
26E626
Bürklin
26E618
Bürklin
744 784 22
744 784 018
744 784 082
744 784 18
744 784 068
GRP155 R71H 102 KA01E
GRP1555 C1H 6R8
DZ01E
GRP1555 C1H 6R8
DZ01E
GRP1555 C1H 2R2
CZ01E
GRP1555 C1H 2R7
CZ01E
GRP1555 C1H 4R7
CZ01E
GRP1555 C1H 1R2 CZ0E
WE
WE
WE
WE
WE
Murata
GRM188 R61A 225
KE19D
GRM155 F51C 104 ZA01D
GRP1555 C1H 220 JZ01E
GRP1555 C1H 6R8
DZ01E
GRP155 R71H 102 KA01E
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
© Koninklijke Philips Elec tronics N.V.
October 2004
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RF Manual
Philips Semiconductors
5th edition APPENDIX
Product and design manual for RF Products
Part
Number
Value
Size
C14
2p7
0402
TX-PAout DC decoupling + matching
Murata, C0G
C15
C16
C17
C18
C19
C20
10u/6.3V
1nF
2u2/10V
1nF
1nF
1nF
0805
0402
0603
0402
0402
0402
dc rail LNVcc
dc noise LNctrl
PA dc rail
dc noise SPDT control
dc noise PActrl
dc noise LNVcc
Murata,
Murata,
Murata,
Murata,
Murata,
Murata,
C21
4p7
0402
RF short for optional LNA input match
Murata, C0G
C22
6p8
0402
dc removal of RX-BP filter and matching
Murata, C0G
C23
6p8
0402
dc removal of TX-LP filter and matching
Murata, C0G
BP1
LP1
fo=2.4GHz
fc=2.4GHz
SMA, female
µStrip tab pin
X2
SMA, female
µStrip tab pin
X3
SMA, female
µStrip tab pin
X4
BÜLA30K
green
X5
BÜLA30K
red
X6
BÜLA30K
black
X7
BÜLA30K
yellow
X8
BÜLA30K
blue
X9
BÜLA30K
red
Z1 - Z6
blue
{ PActrl }
red
{ PAVcc }
green
{ LNctrl }
black
{ GND }
yellow
{ SPDT }
white
{ LNVcc }
M2
Z7 - Z12
M2,5
40cm,
0.5qmm
40cm,
0.5qmm,
40cm,
0.5qmm,
40cm,
0.5qmm
40cm,
0.5qmm,
40cm,
0.5qmm,
M2 x 3mm
M2,5 x
4mm
RX band pass input filtering
TX low pass spurious filtering
Antenna connector, SMA, panel launcher,
female, bulkhead receptacle with flange, PTFE,
CuBe, CuNiAu
RX-Out connector, SMA, panel launcher,
female, bulkhead receptacle with flange, PTFE,
CuBe, CuNiAu
TX-IN connector, SMA, panel launcher, female,
bulkhead receptacle with flange, PTFE, CuBe,
CuNiAu
LNctrl, BÜLA30K, Multiple spring wire plugs,
Solder terminal
PAVcc, BÜLA30K, Multiple spring wire plugs,
Solder terminal
GND, BÜLA30K, Multiple spring wire plugs,
Solder terminal
SPDT, BÜLA30K, Multiple spring wire plugs,
Solder terminal
PActrl, BÜLA30K, Multiple spring wire plugs,
Solder terminal
LNVcc, BÜLA30K, Multiple spring wire plugs,
Solder terminal
Insulated stranded hook -up PVC wire, LiYv,
blue, CuSn
Insulated stranded hook -up PVC wire, LiYv,
red, CuSn
Insulated stranded hook -up PVC wire, LiYv,
green, CuSn
Insulated stranded hook -up PVC wire, LiYv,
black, CuSn
Insulated stranded hook -up PVC wire, LiYv,
yellow, CuSn
Insulated stranded hook -up PVC wire, LiYv,
white, CuSn
Screw for PCB mounting
Würth Elektronik
Würth Elektronik
X1
1008
0805
12.7mm
flange
1.3mm tab
12.7mm
flange
1.3mm tab
12.7mm
flange
1.3mm tab
Screw for SMA launcher mounting
www.isola.de
www.haefeleleiterplatten.de
Y1
Y2
Y3
Y4
Y5
Y6
Function / short explanation
W1
FR4
compatible
47,5mm X
41,5mm
Epoxy 560µm; Cu=17.5µm; Ni=5µm;
Au=0.3µm two layer double side
W2
Aluminum
metal
finished
yellow
Aludine
47,5mm X
41,5mm X
10mm
Base metal caring the pcb and SMA connectors
4322 252 06394
RF Manual Appendix
Manufacturer
X5R
X7R
X5R
X7R
X7R
X7R
Order Code
GRP1555 C1H 2R7
CZ01E
GRM21 BR60J 106 KE19B
GRP155 R71H 102 KA01E
GRM188 R61A 225 KE34B
GRP155 R71H 102 KA01E
GRP155 R71H 102 KA01E
GRP155 R71H 102 KA01E
GRP1555 C1H 4R7
CZ01E
GRP1555 C1H 6R8
DZ01E
GRP1555 C1H 6R8
DZ01E
748 351 024
748 125 024
Order
source
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
WE
WE
Telegärtner
J01 151 A08 51
Telegärtner
Telegärtner
J01 151 A08 51
Telegärtner
Telegärtner
J01 151 A08 51
Telegärtner
Hirschmann
15F260
Bürklin
Hirschmann
15F240
Bürklin
Hirschmann
15F230
Bürklin
Hirschmann
15F250
Bürklin
Hirschmann
15F270
Bürklin
Hirschmann
15F240
Bürklin
VDE0812/9.72
92F566
Bürklin
VDE0812/9.72
92F565
Bürklin
VDE0812/9.72
92F567
Bürklin
VDE0812/9.72
92F564
Bürklin
VDE0812/9.72
92F568
Bürklin
VDE0812/9.72
92F569
Bürklin
Paul-Korth GmbH
NIRO A2 DIN7985-H
Paul-Korth
Paul-Korth GmbH
NIRO A2 DIN7985-H
Paul-Korth
DURAVER®-E-Cu,
Qualität 104 MLB-DE 104
ML/2
Häfele
Leiterplat tentechnik
---
---
---
© Koninklijke Philips Elec tronics N.V.
October 2004
24 of 35
Philips Semiconductors
RF Manual
5th edition APPENDIX
Product and design manual for RF Products
The PCB
4322 252 06394
RF Manual Appendix
© Koninklijke Philips Elec tronics N.V.
October 2004
25 of 35
Philips Semiconductors
RF Manual
5th edition APPENDIX
Product and design manual for RF Products
Appendix E: RF Application-basics
Complete RF Application-basics in previous RF Manual (4th
edition) which is downloadable via RF Manual website:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_man
ual
1.1
1.2
1.3
Frequency spectrum
RF transmission system
RF Front-End
For: Function of an antenna, examples of PCB design, Transistor Semiconductor Process, see
RF Manual 4th edition on the RF Manual website.
1.1 Frequency spectrum
Radio spectrum and wavelengths
Each material’s composition creates a unique pattern in the radiation emitted.
This can be classified in the “frequency” and “wavelength” of the emitted radiation.
As electro-magnetic (EM) signals travel with the speed of light, they do have the character of
propagation waves.
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A survey of the frequency bands and related wavelengths:
Wavelength - λ
acc. DIN40015
CCIR Band
100km to 10km
4
10km to 1km
5
1km to 100m
6
100m to 10m
7
10m to 1m
8
Ultra High Frequency
Definition
(German)
Längswellen
(Myriameterwellen)
Langwelle
(Kilometerwellen)
Mittelwelle
(Hektometerwellen)
Grenzwellen
Kurzwelle
(Dekameterwellen)
Ultrakurzwellen
(Meterwellen)
Dezimeterwellen
1m to 10cm
9
Band
Frequency
Definition
(English)
VLF
3kHz to 30kHz
Very Low Frequency
LF
30kHz to 300kHz
Low Frequency
MF
300kHz to 1650kHz
Medium Frequency
1605KHz to 4000KHz
Boundary Wave
HF
3MHz to 30MHz
High Frequency
VHF
30MHz to 300MHz
Very High Frequency
UHF
300MHz to 3GHz
SHF
3GHz to 30GHz
Super High Frequency
Zentimeterwellen
10cm to 1cm
10
EHF
30GHz to 300GHz
Extremely High Frequency
Millimeterwellen
1cm to 1mm
11
---
300GHz to 3THz
---
Dezimillimeterwellen
1mm-100µm
12
Literature researches according to the Microwave’s sub-bands showed a lot of different definitions with
very few or none description of the area of validity. Due to it, the following table will try to give an
overview but can’t act as a reference.
Source
Nührmann
Nührmann
www.werweiss-was.de
www.atcnea.
de
Validity
IEEE Radar
Standard 521
US Military
Band
Satellite
Uplink
Primary
Radar
Band
A
C
D
E
F
G
H
I
J
K
Ka
Ku
L
M
mm
P
R
Q
S
U
V
W
X
GHz
GHz
GHz
GHz
Siemens
Online
Lexicon
Frequency
bands in the
GHz Area
GHz
3,95-5,8
5-6
4-8
4-8
18-27
27-40
12-18
1-3
1-3
2-3
2-4
4-6
6-8
8-10
10-20
20-40
40-60
60-100
5,85-8,2
18,0-26,5
1,0-2,6
≈16
≈1,3
18-26,5
26,5-40
12,6-18
1-2
Siemens
Online
Lexicon
Microwave
bands
GHz
0,1-0,225
4-8
ARRL
Book
No. 3126
---
Wikipedia
Dividing of Sat and
Radar techniques
GHz
4-8
3,95-5,8
60-90
90-140
140-220
60-90
10,9-36
17-31
15,3-17,2
0,39-1,55
18-26.5
26.5-40
12.4-18
1-2
5,85-8,2
18-26,5
26,5-40
12,4-18
1-2,6
0,225-0,39
110-170
0,22-0,3
36-46
1,55-3,9
33-50
2-4
40-60
50-75
75-110
8-12.4
33-50
2,6-3,95
40-60
50-75
75-110
8,2-12,4
40-100
12,4-18,0
26,5-40,0
3-4
2,6-3,95
40,0-60,0
≈3
2-4
46-56
8-12
8,2-12,4
≈10
8-12,5
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1.2 RF transmission system
Simplex
Half duplex
Full duplex
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1.3 RF Front-End
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Appendix F: RF Design-basics
Complete RF Design-basics in previous RF Manual (4th edition). RF
Manual 4th edition downloadable via RF Manual website:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual
For: Fundamentals and RF Amplifier design Fundamentals, download RF Manual 4th edition on the RF
Manual website.
Small signal RF amplifier parameters
1.
Transistor parameters, DC to microwave
At low DC currents and voltages, one can assume a transistor acts like a voltage-controlled current
source with diode clamping action in the base-emitter input circuit. In this model, the transistor is
specified by its large signal DC-parameters, i.e., DC-current gain (B, ß, hf e), maximum power
dissipation, breakdown voltages and so forth.
I C = I CO ⋅ e
UBE
VT
re ' =
VT
IE
Thermal Voltage: VT=kT/q≈26mV@25°C
ICO =Collector reverse saturation current
Low frequency voltage gain:
Current gain
ß=
Vu ≈
RC
re '
IC
IB
Increasing the frequency to the audio frequency range, the transistor’s parameters get frequencydependent phase shift and parasitic capacitance effects. For characterization of these effects, small
signal h-parameters are used. These hybrid parameters are determined by measuring voltage and
current at one terminal and by the use of open or short (standards) at the other port.
The h-parameter matrix is shown below.
u1 h11
h-Parameter Matrix: =
i2 h21
h12 i1
∗
h22 u2
Increasing the frequency to the HF and VHF ranges, open ports become inaccurate due to electrically
stray field radiation. This results in unacceptable errors. Due to this phenomenon y-parameters were
developed. They again measure voltage and current, but use of only a “short” standard. This “short”
approach yields more accurate results in this frequency region. The y-parameter matrix is shown
below.
i1 y11
y-Parameter Matrix: =
i 2 y21
y12 u1
∗
y 22 u2
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Further increasing the frequency, the parasitic inductance of a “short” causes problem due to
mechanical depending parasitic. Additionally, measuring voltage, current and it’s phase is quite tricky.
The scattering parameters, or S-parameters, were developed based on the measurement of the
forward and backward traveling waves to determine the reflection coefficients on a transistor’s
terminals (or ports). The S-parameter matrix is shown below.
b1 S11
S12 a1
∗
S 22 a 2
S-Parameter Matrix: =
b2 S 21
2.
Definition of the S-Parameters
Every amplifier has an input port and an output port (a 2-port network). Typically the input port is
labeled Port-1 and the output is labeled Port-2.
Matrix:
Equation:
b1 S11 S12 a1
=
∗
b2 S 21 S 22 a 2
b 1 = S11 ⋅ a 1 + S12 ⋅ a 2
b 2 = S21 ⋅ a 1 + S22 ⋅ a 2
Figure 10: Two-port Network’s (a) and (b) waves
The forward-traveling waves (a) are traveling into the DUT’s (input or output) ports.
The backward-traveling waves (b) are reflected back from the DUT’s ports
The expression “port ZO terminate” means the use of a 50Ω-standard. This is not a conjugate complex
power match! In the previous chapter the reflection coefficient was defined as:
Reflection coefficient:
r=
back running wave
forward running wave
Calculating the input reflection factor on port 1: S11 =
b1
a1
a2 = 0
with the output terminated in ZO.
That means the source injects a forward-traveling wave (a1) into Port-1. No forward-traveling power
(a2) injected into Port-2. The same procedure can be done at Port-2 with the
Output reflection factor:
Gain is defined by:
gain =
S 22 =
b2
a2
a1 =0
with the input terminated in ZO.
output wave
input wave
The forward-traveling wave gain is calculated by the wave (b2) traveling out off Port-2 divided by the
wave (a1) injected into Port-1.
S21 =
b2
a1
a2 = 0
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The backward traveling wave gain is calculated by the wave (b1) traveling out off Port-1 divided by
the wave (a2) injected into Port-2.
S12 =
b1
a2
a1 = 0
The normalized waves (a) and (b) are defined as:
a1 =
a2 =
b1 =
b2 =
2
2
2
2
1
ZO
1
ZO
1
ZO
1
ZO
(V1 + Z O ⋅ i1 )
=
(V2 + Z O ⋅ i2 )
=
Forward transmission:
FT = 20log (S 21 )dB
signal into Port-1
Isolation:
S12(dB) = −20log (S12 )dB
signal into Port-2
Input Return Loss:
(V1 + Z O ⋅ i1 )
=
RL in = −20log (S11 )dB
signal out of Port-1
Output Return Loss:
(V1 + Z O ⋅ i2 )
=
RL OUT = −20log (S22 )dB
signal out of Port-2
The normalized waves have units of Wat t and are
referenced to the system impedance ZO. It is shown by
the following mathematical analyses:
The relationship between U, P an ZO can be written as:
u
= P = i ⋅ ZO
ZO
a1 =
Substituting:
Z0
= ZO
ZO
P Z ⋅i
V1
Z ⋅i
+ O 1 = 1+ O 1
2
2 Z O 2 ZO
2 ZO
Insertion Loss:
IL = −20log (S21 )dB
Rem:
ZO
ZO
=
ZO ⋅ ZO
ZO ⋅ ZO
P =U ⋅I =
=
ZO ⋅ ZO
ZO
= ZO
U2
U
è P =
=I⋅ R
R
R
Z O ⋅ i1
P
P
Volt
= 1 + 1 è a1 = P1 (è Unit = Watt =
)
2
2
2
Ohm
V
Because a1 = forward , the normalized waves can be determined the measuring the voltage of a
ZO
a1 =
P1
+
2
forward-traveling wave referenced to the system impedance constant Z O . Directional couplers or
VSWR bridges can divide the standing waves into the forward- and backward-traveling voltage wave.
(Diode) Detectors convert these waves to the Vforward and Vbackward DC voltage. After an easy
processing of both DC voltages, the VSWR can be read.
IN
OUT
Vforward
Detector
Vbackward
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50Ω VHF-SWR-Meter built from a kit (Nuova Elettronica). It
consists of three strip-lines. The middle line passes the main
signal from the input to the output. The upper and lower strip lines select a part of the forward and backward traveling waves
by special electrical and magnetic cross-coupling. Diode
detectors at each coupled strip-line-end rectify the power to a
DC voltage, which is passed to an external analog circuit for
processing and monitoring of the VSWR. Applications: Power
antenna match control, PA output power detector, vector
voltmeter, vector network analysis, AGC, etc. These kinds of
circuit’s kits are published in amateur radio literature and in
several RF magazines.
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2-Port Network definition
Input return loss
S11 =
Power reflected from input port
Power available from generator at input port
Output return loss
S 22 =
Power reflected from output port
Power available from generator at output port
Forward transmission loss (insertion loss)
Figure 11: S-Parameters in the Two-port Network
S 21 = Transducer power gain
Reverse transmission loss (isolation)
S12 = Reverse transduce r power gain
2
Philips’ data sheet parameter Insertion power gain |S21|2: 10dB ⋅ log S 21 = 20dB ⋅ log S 21
Example:
Calculation:
Calculate the insertion power gain for the BGA2003 at 100MHz, 450MHz,
1800MHz, and 2400MHz for the bias set-up VVS- OUT=2.5V, IVS -OUT=10mA.
Download the S-Parameter data file [2_510A3.S2P] from the Philips’ website
page for the Silicon MMIC amplifier BGA2003.
This is a section of the file:
# MHz S MA R 50
! Freq
100
400
500
1800
2400
Results:
0.58765
0.43912
0.39966
0.21647
0.18255
S11
-9.43
-28.73
-32.38
-47.97
-69.08
S21
21.85015 163.96
16.09626 130.48
14.27094 123.44
4.96451
85.877
3.89514
76.801
S22 :
0.9525
-7.204
0.80026
-22.43
0.75616
-25.24
0.52249
-46.31
0.48091
-64
100MHz
è 20⋅log(21.85015) = 26.8 dB
450MHz
16.09626e130. 48° + 14.27094e123.44°
è 20 dB log
= 23.6dB
2
1800MHz
2400MHz
è20⋅log(4.96451) = 13.9 dB
è20⋅log(3.89514) = 11.8 dB
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S12
0.00555
83.961
0.019843 79.704
0.023928 79.598
0.07832
82.488
0.11188
80.224
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3-Port Network definition
Typical vehicles for 3-port s-parameters are: Directional couplers, power splitters, combiners, and
phase splitters.
3-Port s-parameter definition:
§
Port reflection coefficient / return loss:
Port 1
è
S11 =
Port 2
è
S 22 =
Port 3
è
§
RF Manual Appendix
b2
|( a =0; a = 0)
a2 1 3
b
S33 = 3 |( a1 =0; a 2 = 0)
a3
Transmission gain:
Figure 12: Three-port Network's (a) and (b) waves
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b1
|( a = 0; a = 0)
a1 2 3
Port 1=>2
è
Port 1=>3
è
Port 2=>3
è
Port 2=>1
è
Port 3=>1
è
Port 3=>2
è
b2
|( a = 0)
a1 3
b
S31 = 3 |( a2 = 0)
a1
b
S32 = 3 |( a1 = 0)
a2
S21 =
b1
|( a = 0)
a2 3
b
S31 = 1 |( a 2 =0)
a3
b
S23 = 3 |( a1 = 0)
a2
S12 =
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MAIN FILE RF Manual
In separate file !
Download main RF Manual from internet:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: October 2004
Document order number: 4322 252 06394
Published in The Netherlands
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