Philips RF Manual 5th Edition APPENDIX BGA6489
User Manual: BGA6489
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Semiconductors
5th edition
Product and design manual for RF Products
October 2004
Appendix RF Manual
Philips Semiconductors
RF Manual
5th edition
APPENDIX
Product and design manual for RF Products
4322 252 06394 © Koninklijke Philips Elec tronics N.V.
RF Manual Appendix October 2004 2 of 35
Koninklijke Philips Electronics N.V. 2004
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Date of release: October 2004
Philips Semiconductors
RF Manual
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APPENDIX
Product and design manual for RF Products
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RF Manual Appendix October 2004 3 of 35
Content appendix:
Application notes:
Appendix A: BGA2715-17 general purpose
wideband amplifier,
50 Ohm Gain Blocks page: 4 - 8
Appendix B: BGA6x89 general purpose
medium power amplifier,
50 Ohm Gain Blocks page: 9 -14
Appendix C: Introduction into the
GPS Front-End page: 15 -18
Reference work:
Appendix D: 2.4GHz Generic Front-End
reference design page: 19 - 25
Appendix E: RF Application-basics page: 26 - 29
Appendix F: RF Design-basics page: 30 - 34
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Appendix A: BGA2715-17 general purpose
wideband amplifiers, 50 Ohm Gain Blocks
APPLICATION INFORMATION BGA2715-17
Figure 2 shows a typical application circuit for the BGA2715-17 MMIC.
The device is internally matched to 50 O, and therefore does not need any external
matching. The value of the input and output DC blocking capacitors C2 and C3 should
not be more than 100 pF for applications above 100 MHz. However, when the device is
operated below 100 MHz, the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to
the MMIC.
The PCB top ground plane, connected to the pins 2, 4 and 5 must be as close as
possible to the MMIC, preferably also below the MMIC. When using via holes, use
multiple via holes, as close as possible to the MMIC.
Application examples
RF output
Vs
RF input
GND2
RF in
Vs
RF out
C2 C3
C1
GND1
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RF Manual Appendix October 2004 5 of 35
The MMIC is very suitable as IF amplifier in e.g. LNB's. The exellent wideband
characteristics make it an easy building block.
As second amplifier after an LNA, the MMIC offers an easy matching, low noise
solution.
to IF circuit
or demodulator
from RF circuit
Mixer
Oscillator
wideband
amplifier
to IF circuit
or demodulator
antenna
Mixer
Oscillator
wideband
amplifier
LNA
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MMIC wideband amplifier BGA2715
FEATURES PINNING
PIN
1 VS
2,5 GND 2
3 RF out
4 GND 1
6 RF in
QUICK REFERENCE DATA
SYMBOL CONDITIONS TYP. MAX. UNIT
Vs 5 6 V
Is 4.3 -mA
|S21|
2
f = 1 GHz 22 -dB
NF f = 1 GHz 2.6 -dB
PL sat f = 1 GHz -4 -dBm
DESCRIPTION
noise figure
saturated load power
DC supply current
insertion power gain
PARAMETER
DC supply voltage
Fig.1 Simplified outline (SOT363) and symbol.
Top view
FEATURES
• Internally matched to 50 Ohms
• Wide frequency range, 3 dB bandwidth = 3.3 GHz
• Flat 22 dB gain, ± 1 dB up to 2.8 GHz
• -8 dBm output power at 1 dB compression point
• Good linearity for low current, OIP3 = 2 dBm
• Low second harmonic, -30 dBc at PDrive = - 40 dBm
• Unconditionally stable, K
APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a
6-pin SOT363 plastic SMD package.
Marking code: B6-
2,5
6
1
3
4
1 2 3
6 5 4
1 2 3
6 5 4
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MMIC wideband amplifier BGA2716
FEATURES PINNING
PIN
1 VS
2,5 GND 2
3 RF out
4 GND 1
6 RF in
QUICK REFERENCE DATA
SYMBOL CONDITIONS TYP. MAX. UNIT
Vs 5 6 V
Is 15.9 -mA
|S21|
2
f = 1 GHz 22.9 -dB
NF f = 1 GHz 5.3 -dB
PL sat f = 1 GHz 11.6 -dBm
DESCRIPTION
noise figure
saturated load power
DC supply current
insertion power gain
PARAMETER
DC supply voltage
Fig.1 Simplified outline (SOT363) and symbol.
Top view
FEATURES
• Internally matched to 50 Ohms
• Wide frequency range, 3 dB bandwidth = 3.2 GHz
• Flat 23 dB gain, ± 1 dB up to 2.7 GHz
• 9 dBm output power at 1 dB compression point
• Good linearity for low current, OIP3 = 22 dBm
• Low second harmonic, -38 dBc at PLoad = - 5 dBm
• Unconditionally stable, K > 1.2
APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a
6-pin SOT363 plastic SMD package.
Marking code: B7-
2,5
6
1
3
4
1 2 3
6 5 4
1 2 3
6 5 4
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MMIC wideband amplifier BGA2717
FEATURES PINNING
PIN
1 VS
2,5 GND 2
3 RF out
4 GND 1
6 RF in
QUICK REFERENCE DATA
SYMBOL CONDITIONS TYP. MAX. UNIT
Vs 56V
Is 8.0 -mA
|S21|
2
f = 1 GHz 24 -dB
NF f = 1 GHz 2.3 -dB
PL sat f = 1 GHz 1-dBm
DESCRIPTION
noise figure
saturated load power
DC supply current
insertion power gain
PARAMETER
DC supply voltage
Fig.1 Simplified outline (SOT363) and symbol.
Top view
FEATURES
• Internally matched to 50 Ohms
• Wide frequency range, 3 dB bandwidth = 3.2 GHz
• Flat 24 dB gain, ± 1 dB up to 2.8 GHz
• -2.5 dBm output power at 1 dB compression point
• Good linearity for low current, OIP3 = 10 dBm
• Low second harmonic, -38 dBc at PDrive = - 40 dBm
• Low noise figure, 2.3 dB at 1 GHz.
• Unconditionally stable, K > 1.5
APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a
6-pin SOT363 plastic SMD package.
Marking code: 1B-
2,5
6
1
3
4
1 2 3
6 5 4
1 2 3
6 5 4
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Appendix B: BGA6x89 general purpose
medium power ampl., 50 Ohm Gain Blocks
Application note for the BGA6289
Application note for the BGA6289.
(See also the objective datasheet BGA6289)
Figure 1 Application circuit.
COMPONENT
DESCRIPTION VALUE DIMENSIONS
Cin Cout multilayer ceramic chip
capacitor 68 pF 0603
CA Capacitor 1 µF 0603
CB multilayer ceramic chip
capacitor 1 nF 0603
CC multilayer ceramic chip
capacitor 22 pF 0603
Lout SMD inductor 22 nH 0603
Vsupply Supply voltage 6 V
Rbias=RB SMD resistor 0.5W 27 Ohm ----
VD
CB CB
CA CD
LC
50 Ohm
microstrip
50 Ohm
microstrip
2
2
13
VS
Rbias
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Table 1 component values placed on the demo board.
CA is needed for optimal supply decoupling .
Depending on frequency of operation the values of Cin Cout and Lout can be changed
(see table 2).
COMPONENT
Frequency (MHz)
500 800 1950 2400 3500
Cin Cout 220 pF
100 pF 68 pF 56 pF 39 pF
CA 1 µF 1 µF 1 µF 1 µF 1 µF
CB 1 nF 1 nF 1 nF 1 nF 1 nF
CC 100 pF
68 pF 22 pF 22 pF 15 pF
Lout 68 nH 33 nH 22 nH 18 nH 15 nH
Table 2 component selection for different frequencies.
Vsupply depends on Rbias used. Device voltage must be approximately 4 V (i.e. device
current = 80mA).
With formula 1 it is possible to operate the device under different supply voltages.
If the temperature raises the device will draw more current, the voltage drop over Rbias
will increase and the device voltage decrease, this mechanism provides DC stability.
Measured small signal performance.
Figure 2 Small signal performance.
Measured large signal performance.
f 850 MHz 2500 MHz
IP3out 31 dBm 25 dBm
PL1dB 18 dBm 16 dBm
NF 3.8 4.1
Table 3 Large signal performance and noise figure.
Small signal performance BGA6289
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
5.00
10.00
15.00
20.00
0.00 500.00 1000.00 1500.00 2000.00 2500.00 3000.00
f [MHz]
S11 [dB]
S12 [dB]
S21 [dB]
S22 [dB]
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Application note for the BGA6489
Application note for the BGA6489.
(See also the objective datasheet BGA6489)
Figure 1 Application circuit.
COMPONENT
DESCRIPTION VALUE DIMENSIONS
Cin Cout multilayer ceramic chip
capacitor 68 pF 0603
CA Capacitor 1 µF 0603
CB multilayer ceramic chip
capacitor 1 nF 0603
CC multilayer ceramic chip
capacitor 22 pF 0603
Lout SMD inductor 22 nH 0603
Vsupply Supply voltage 8 V
Rbias=RB SMD resistor 0.5W 33 Ohm ----
Table 1 component values placed on the demo board.
VD
CB CB
CA CD
LC
50 Ohm
microstrip
50 Ohm
microstrip
2
2
13
VS
Rbias
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CA is needed for optimal supply decoupling .
Depending on frequency of operation the values of Cin Cout and Lout can be changed
(see table 2).
COMPONENT
Frequency (MHz)
500 800 1950 2400 3500
Cin Cout 220 pF
100 pF 68 pF 56 pF 39 pF
CA 1 µF 1 µF 1 µF 1 µF 1 µF
CB 1 nF 1 nF 1 nF 1 nF 1 nF
CC 100 pF
68 pF 22 pF 22 pF 15 pF
Lout 68 nH 33 nH 22 nH 18 nH 15 nH
Table 2 component selection for different frequencies.
Vsupply depends on Rbias used. Device voltage must be approximately 5.1 V (i.e. device
current = 80mA).
With formula 1 it is possible to operate the device under different supply voltages.
If the temperature raises the device will draw more current, the voltage drop over Rbias
will increase and the device voltage decrease, this mechanism provides DC stability.
Measured small signal performance.
Figure 2 Small signal performance.
Measured large signal performance.
f 850 MHz 2500 MHz
IP3out 33 dBm 27 dBm
PL1dB 20 dBm 17 dBm
NF 3.1 dB 3.4 dB
Table 3 Large signal performance and noise figure.
Small signal performance BGA6489
-40.00
-30.00
-20.00
-10.00
0.00
10.00
20.00
30.00
0.00 500.00 1000.00 1500.00 2000.00 2500.00 3000.00
f [MHz]
S11
S12
S21
S22
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Application note for the BGA6589
The Demo Board with medium power wide-band gainblock BGA6589.
(See also the objective datasheet BGA6589)
Application circuit.
COMPONEN
T DESCRIPTION VALUE DIMENSIONS
Cin Cout multilayer ceramic chip
capacitor 68 pF 0603
CA Capacitor 1 µF
CB multilayer ceramic chip
capacitor 1 nF 0603
CC multilayer ceramic chip
capacitor 22 pF 0603
LC SMD inductor 22 nH 0603
Vsupply Supply voltage 7.5 V
Rbias=RB SMD resistor 0.5W 33 Ohm ----
Table 1 component values placed on the demo board.
VD
CB CB
CA CD
LC
50 Ohm
microstrip
50 Ohm
microstrip
2
2
13
VS
Rbias
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CA is needed for optimal supply decoupling .
Depending on frequency of operation the values of Cin Cout and Lout can be changed
(see table 2).
COMPONENT
Frequency (MHz)
500 800 1950 2400 3500
Cin Cout 220 pF
100 pF 68 pF 56 pF 39 pF
CA 1 µF 1 µF 1 µF 1 µF 1 µF
CB 1 nF 1 nF 1 nF 1 nF 1 nF
CC 100 pF
68 pF 22 pF 22 pF 15 pF
Lout 68 nH 33 nH 22 nH 18 nH 15 nH
Table 2 component selection for different frequencies.
Vsupply depends on Rbias used. Device voltage must be approximately 4.8 V (i.e. device
current = 83mA).
With formula 1 it is possible to operate the device under different supply voltages.
If the temperature raises the device will draw more current, the voltage drop over Rbias
will increase and the device voltage decrease, this mechanism provides DC stability.
Measured small signal performance.
Figure 2 Small signal performance.
Measured large signal performance.
f 850 MHz 2500 MHz
IP3out 33 dBm 32 dBm
PL1dB 21 dBm 19 dBm
NF 3.1 dB 3.4 dB
Table 3 Large signal performance and noise figure.
Small signal performance BGA6589
-50.00
-40.00
-30.00
-20.00
-10.00
0.00
10.00
20.00
30.00
0.00 500.00 1000.00 1500.00 2000.00 2500.00 3000.00
f [MHz]
S11
S12
S21
S22
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Appendix C: Introduction GPS Front-End
Due to shrinking of the mechanical dimensions and attractive pricing of the
semiconductors, GPS applications got very popular in the last years. A GPS navigation
system is based on measuring and evaluating RF signals transmitted by the GPS
satellites. There are at least 24 active satellites necessary in a distance of 20200km
above the Earth surface. All sat’s transmits their civil useable L1 signal at the same
time down to the user on 1575.42MHz in the so-called microwave L-band. Each
satellite have it’s own C/A code (Coarse Acquisition).
The L1 carrier based GPS system does use : CDMA - DSSS - BPSK modulation
Available GPS carrier frequencies
L1 Link 1 carrier frequency 1575.42 MHz
L2 Link 2 carrier frequency 1227.6 MHz
L3 Link 3 carrier frequency 1381.05 MHz
L4 Link 4 carrier frequency 1379.913 MHz
L5 Link 5 carrier frequency 1176.45 MHz
The U.S. navigation system GPS was originally started by the U.S. military in 1979. It will be updated in
order to supply the carriers L2 & L5 for increasing civil performances together with the standard L1 RF
carrier. GPS uses BPSK modulation on the L1 carrier and, beginning with launch of the modernized
Block IIR the L2 carrier. The L5 signal that will appear with the Block IIF satellites in 2006 will have use of
the QPSK modulation (Quadrature Phase Shift Keying).
The GPS Satellites are 20020km far from the Earth surface
This satellite identifier C/A code is
P
seudo
Randomly and appears like Noise in the
frequency spectrum (=PRN C/A code). The L1
carrier is BPSK (Binary Phase Shift Keying)
modulated by the C/A data code, by the
navigation data message and the encrypted
P(Y)-code. Due to C/A’s PRN modulation, the
carrier is DSSS modulated (Direct Sequence
Spread Spectrum modulation). This DSSS
spreads the former bandwidth signal to a satel
lite
internal limited width of 30MHz. A GPS receiver
must know the C/A code of each satellite for
selecting it out of the antennas kept RF
spectrum. Because a satellite is selected out of
the data stream by the use of an identification
code, GPS is a CDMA-System (Code Division
Multiplex Access). This RF signal is transmitted
with enough power to ensure a minimum signal
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The performances overview of the actual and the next up-coming GPS system:
Topic Used Codes
Need of a
second
reference base
station
Resolution Comments
Today basic
positioning C/A Code on L1 No
Before May 2000: 25-
100m Today 6-10m
(resolution controlled
by US)
- - -
Tomorrow basic
positioning
C/A Code on L1
L2C Code on L2
New Code on L5
No 1-5m
Eliminates need for
costly DGPS in many
non-safety
applications.
Today advance
positioning
L1 Code and
Carrier
L2 Carrier
Data Link
Yes 2cm max. distance too
reference 10km
Tomorrow
advanced
positioning
L1 Code and
Carrier
L2 Code and
Carrier
L5 Code and
Carrier
Data Link
Yes 2cm
max. distance too
reference 100km;
faster recovery
following signal
interruption
Competition Satellite based navigation systems:
In 2004 will be start the European navigation system EGNOS. News forecasted the European system
Galileo for 2008. GLONASS is a Russian Navigation System.
Comparison of the front-ends used in a GPS and in a GLONASS receiver:
All GPS satellites use the same L1 frequency of 1575.42MHz, but different C/A codes, so a single front-
end may be used. To achieve better sky coverage and accelerated operation, more than one antenna
can be used. In this case, separate front-ends can be used. Using switches based on Philips’ PIN-diodes
makes it possible to select the antenna with the best signal in e.g. automotive applications for operation
in a city.
Each GLONASS satellite will use a different carrier frequency in the range of 1602.5625MHz to
1615.5MHz, with 562.5KHz spacing, but all with the same spreading code. The normal method for
receiving these signals uses of several parallel working front-ends, perhaps with a common first LNA and
mixer, but certainly with different final local oscillators and IF mixer.
The spread spectrum modulated signals
field strength is very weak and cause a
negative SNR in the receiver input
circuit caused by the Nyquist Noise
determined by the Analog Front-End IF
bandwidth:
Satellite
Generation
Channel C/A
Loop peek
L1 -158.5dBW
II/IIA/IIR L2 -164.5dBW
L1 -158.5dBW
IIR-M/IIF L2 -160.0dBW
(
)
W
P
dBW 1
log10=
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GPS Marked & Applications
Marked of GPS Applications
Consumer
OEM
Avionics
Survey /
Mapping
Car Navigation
Military
Marine
Tracking /
Machine
Control
References:
- Office of Space Commercialization, United States Department of Commerce
- U.S. Coast Guard Navigation Center of Excellence
- NAVSTAR Global Positioning System
- NAVSTAR GPS USER EQUIPMENT INTRODUCTION
- Royal school of Artillery, Basic science & technology section, BST, gunnery careers courses, the
NAVSTAR Global Positioning System
, …
Simplified block diagram of a typically GPS receiver analog front-end IC
Typically, an integrated double superheat-receiver technology is used in the analog rail. The under
sampling analog to digital converter (ADC) is integrated in the analog front-end IC with a resolution of 1
to 2bit. Due to under sampling, it acts as the third mixer for down converting into to the digital stream IF
band. Behind this ADC, the digital Baseband Processor is located. Till this location, the SNR of the
received satellite signals is negative. In the Baseband Processor, the digital IF signal is parallel
processed in several C/A correlators and NAV-data code discriminators. During this processing, the
effective Nyquest Bandwidth is shrink down to few Hertz, dispreading and decoding of the GPS signal is
made causing a positive SNR. Because typically front-end ICs are designed in a high-integrated low
Application examples:
- Personal Navigations
- Railroads
- Recreation, walking-tour
- Off shore Drilling
- Satellite Ops. Ephemeris Timing
- Surveying & Mapping
- Network Timing,
Synchronization
- Fishing & Boat
- Arm Clocks
- Laptops and Palms
- Mobiles
- Child safety
- Car navigation systems
- Fleet management systems
- Telecom Time reference
- High way toll system
- First-Aid call via mobiles
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power relative noisy semiconductor process, there is a need of an external Low-Noise-Amplifier (LNA)
combined with band pass-filters. Because the available GPS IC chipsets on the market differ in their
electrically performances like, Gain, Noise Figure (NF), linearity and sensitivity, therefore one and two-
stage discrete front-end amplifiers are used. The numbers of filters in the front-end vary with the needs
on the applications target environment, costs and sizes. The processed number of GPS carriers as well
as the navigation accuracy does determine the min. allowed bandwidth of the analog-front end rail.
Philips Semiconductors offer MMICs with internal 50Ω matches at the input and output (I/O) and without
internal matching. The internal matched broadband MMICs typically need an output inductor for DC
biasing and DC decoupling capacitors at the amplifier I/O. The internal non-matched devices need I/O
matching network typically made by lumped LC circuits in a L-arrangement. This gives additionally
selectivity. Another advantage of this MMIC is the integrated temperature compensation in contrast to a
transistor. In a system, typically the first amplifier’s noise figure is very important. E.g. the BGU2003 SiGe
MMIC offers both (NF+IP3) with a good quality. It’s Si made brother BGA2003 come with lower amount
of IP3 and NF. IC chip-sets with a need of high front-end gain made by one MMIC may be able to use
BGM1011 or BGM1013. Two-stage design e.g. will use BGA2001, BGA2011 eventually combined with
BGA2748 or BGA2715 or BGA2717. Some examples of configuration for an L1-carrier LNA are shown in
the next two tables.
Single Front-End amplifier:
Amplifier BFG
325W BFU
540 BGU
2003 BGM
1013 BGM
1011 BFG
410W BGA
2011 BGA
2001 BGA
2003 BGA
2715 BGA
2748
Gain 14dB 20dB 14dB 34dB 35dB 18dB 12dB 14dB 14dB 23.2dB 21dB
NF 1dB 0.9dB 1.1dB 4.7dB 4.7dB 1.1dB 1.5dB 1.3dB 1.8dB 2.7dB 2dB
IP3o(out) +24dBm +21dBm
+21dBm +21dBm +20dBm +15dBm +10dBm +9.5dBm
+9.2dBm
+1dBm -1.6dBm
Matching External External
External Internal Internal External External External External Internal Internal
Two-cascaded circuit Front-End amplifier:
1st Stage BFG325W
BFG410W
BFG410W
BFU540 BFG325W
BGA2011
BGU2003
BGA2011
BGA2003
BGA2011
2nd Stage
BFU540 BFU540 BGU2003
BFG410W
BFG410W
BGA2011
BGA2001
BGA2715
BGA2715
BGA2748
Cascaded
Gain 31dB 35dB 29dB 35dB 29dB 21dB 25dB 32.2dB 34dB 30dB
Cascaded
NF 1.19dB 1.25dB 1.32dB 1.11dB 1.28dB 2dB 1.5dB 2.5dB 2.6dB 2.2dB
Cascaded
IP3o +21dBm +21dBm +21dBm +15dBm +15dBm +10dBm +9.5dBm +1dBm +1dBm -1.6dBm
Note: [1] Gain=|S21|2; data @ 1.8GHz or the next one / approximated, found in the data sheet /
diagrams
[2] For cascaded amplifier equations referee to e.g. 4th Edition RF Manual Appendix, 2.4GHz
Generic Front-End reference design
[3] The evaluated cascaded amplifier includes an example interstage filter with 3dB insertion loss
(NF=+3dB; IP3=+40dBm).
[4] MMICs: BGAxxxx, BGMxxxx, BGUxxxx Transistors: BFGxxx, BFUxxx
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Appendix D: 2.4GHz Generic Front-End
Reference design
Complete design description in previous RF Manual (4th edition),
including datasheet. Downloadable via RF Manual website:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual
Description of the generic Front-End
This note describes the design and realization of a 2.4GHz ISM front end (Industrial-
Scientific-Medical). Useful for wireless communication applications, LAN and e.g.
Video/TV signal transmission. It covers power amplifier (PA) design in the Tx path, Low
Noise Amplifier (LNA) design in the Rx path and RF multiplexing towards the antenna.
Though actual IC processes enable front-end integration to a certain extend, situations
do exists were dedicated discrete design is required, e.g. to realize specific output
power. On top of the factual design, attention is paid to interfacing the front end to
existing Philips IC. More then trying to fit a target application, our intention here is to
illustrate generic discrete Front end design methodology.
§ The job of the Front-End in an application
The board supports half duplex operation. This means the TX and RX operation are not
possible at the same time. The time during TX and RX activity are so called time slots
or just slots. The order of the TX and RX slots is specific for the selected standard.
Special handshaking activities consist of several TX and RX slots put together in to the
so-called time-frame or just frame. The user points / access points linked in this
Figure1: The position of the LNA inside the 2.
4GHz Generic Front
-
End
BAP51
-
02
BGU2003
BGA6589
Reference
Board
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RF Manual Appendix October 2004 20 of 35
wireless application must follow the same functionality of slots, same order of frames
and timing procedure (synchronization). These kind of issues must be under the
control of specific rules (standard) normally defined by Institutes or Organization like
ETSI, IEEE, NIST, FCC, CEPT, and so on.
Applications for the Reference Board
Some application ideas for the use of the Generic Front-End Reference Board
§ 2.4GHz WLAN
§ Wireless video, TV and remote control signal transmission
§ PC to PC data connection
§ PC headsets
§ PC wireless mouse, key board, and printer
§ Palm to PC, Keyboard, Printer connectivity
§ Supervision TV camera signal transmission
§ Wireless loudspeakers
§ Robotics
§ Short range underground walky-talky
§ Short range snow and stone avalanche person detector
§ Key less entry
§ Identification
§ Tire pressure systems
§ Garage door opener
§ Remote control for alarm-systems
§ Intelligent kitchen (cooking place, Microwave cooker and washing machine operator reminder)
§ Bluetooth
§ DSSS 2.4GHz WLAN (IEEE802.11b)
§ OFDM
§ 2.4GHz WLAN (IEEE802.11g)
§ Access Points
§ PCMCIA
§ PC Cards
§ 2.4GHz Cordless telephones
§ Wireless pencil as an input for Palms and PCs
§ Wireless hand scanner for a Palm
§ Identification for starting the car engine
§ Wireless reading of gas counters
§ Wireless control of soft-drink /cigarette/snag - SB machine
§ Communication between bus/taxi and the stop lights
§ Panel for ware house stock counting
§ Printers
§ Mobiles
§ Wireless LCD Display
§ Remote control
§ Cordless Mouse
§ Automotive, Consumer, Communication
Please note:
The used MMICs and PIN diodes can be used in other frequency ranges e.g. 300MHz to 3GHz for
applications like communication, networking and ISM too.
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Selection of Applications in the 2.4GHz environment
Application Standardization name/
issue Start frequency Stop Frequency Centre
frequency
Bandwidth-MHz/
Channel Spacing-
MHz
Bluetooth; 1Mbps IEEE802.15.1 NUS/EU=2402MHz
(All)=2402MHz NUS/EU=2480MHz
(All)=2495MHz 2442.5MHz NUS/EU=78/1MHz
(All)=93/1MHz
WiMedia , (802.15.3a@3.1-10.6GHz) IEEE802.15.3 (camera,
video) 2.4GHz 2.49GHz 2.45GHz
ZigBee; 1000kbps@2450MHz
Other Frequency(868; 915)MHz IEEE802.15.4 US=2402MHz
EU=2412MHz US=2480MHz
EU=2472MHz 2441MHz US=83/4MHz
EU=60/4
DECT@ISM ETSI 2400 MHz 2483MHz 2441.5MHz 83/
FDD Uplink (D) ≈1920 ≈1980
FDD Downlink (D) ≈2110 ≈2170
IMT-2000 =3G; acc., ITU, CEPT, ERC
ERC/DEC/(97)07; ERC/DEC/(99)25
(=UMTS, CDMA2000, UWC-136, UTRA-
FDD, UTRA-TDD) TDD (D) ≈1900 ≈2024
Exact Frequency
range depending on
country & system
supplier
(TDD, FDD; WCDMA,
TD-CDMA);
paired 2x60MHz (D)
non paired 25MHz (D)
USA - ISM 2400MHz 2483.5MHz 2441.75MHz 83.5/
Wireless LAN; Ethernet; (5.2; 5.7)GHz IEEE802.11; (a, b, …) 2400MHz 2483MHz 2441.5MHz 83/FHSS=1MHz;
DSSS=25MHz
Wi-Fi; 11-54Mbs; (4.9-5.9)GHz IEEE802.11b; (g, a) 2400MHz 2483MHz 2441.5MHz
RFID ECC/SE24 2446MHz 2454MHz 2.45GHz
Wireless LAN; 11Mbps IEEE802.11b 2412MHz 2462MHz 2437MHz 56/
Wireless LAN; 54Mbps IEEE802.11g
WPLAN NIST 2400MHz
HomeRF; SWAP/CA, 0.8-1.6Mbps NUS/EU=2402MHz
(All)=2402 NUS/EU=2480MHz
(All)=2495 78/1MHz, 3.5MHz
93/1MHz, 3.5MHz
Fixed Mobile; Amateur Satellite; ISM, SRD,
RLAN, RFID ERC, CEPT Band Plan 2400MHz 2450MHz 2425MHz 50/
Fixed RF transmission acc. CEPT Austria regulation 2400MHz 2450MHz 2425MHz 50/
MOBIL RF; SRD acc. CEPT Austria regulation 2400MHz 2450MHz 2425MHz 50/
Amateur Radio FCC 2390MHz 2450MHz 60/
UoSAT-OSCAR 11, Telemetry Amateur Radio Satellite UO-
11 2401.5MHz
AMSAT-OSCAR 16 Amateur Radio Satellite AO-
16 2401.1428MHz
DOVE-OSCAR 17 Amateur Radio Satellite DO-
17 2401.2205MHz
Globalstar, (Mobile Downlink) Loral, Qualcomm 2483.5MHz 2500MHz
Ellipso, (Mobile Downlink) Satellite; Supplier Ellipsat 2483.5MHz 2500MHz
Aries, (Mobile Downlink) (now Globalstar?) Satellite; Supplier
Constellation 2483.5MHz 2500MHz
Odyssey, (Mobile Downlink) Satellite; Supplier TRW 2483.5MHz 2500MHz
S-Band
Orbcomm Satellite (LEO) eg. GPSS-GSM Satellite 2250,5MHz
Ariane 4 and Ariane 5 (ESA, Arianespace) tracking data link for rocket 2206MHz
Atlas Centaur eg. carrier for Intelsat IVA F4 tracking data link for rocket 2210,5MHz
J.S. Marshall Radar Observatory 700KW Klystron TX S-Band
Raytheon ASR-10SS Mk2 Series S-Band
Solid-State Primary Surveillance Radar US FAA/DoD ASR-11
used in U.S. DASR program 2700 2900 S-Band Radar
≈2400MHz
Phase 3D; Amateur Radio Satellite; 146MHz,
436MHz, 2400MHz AMSAT; 250Wpep TX S-Band 2.4KHz, SSB
Apollo 14-17; NASA space mission transponder experiments S-Band
ISS; (internal Intercom System of the ISS
station) Space 2.4GHz
MSS Downlink UMTS 2170 2200
Abbreviations: European Radio communication Committee (ERC) within the European Conference of Postal and Telecommunication
Administration (CEPT)
NIST
=
Nat
ional Institute of Standards and Technology
WPLAN = Wireless Personal Area Networks
WLAN = Wireless Local Area Networks
ISM = Industrial Scientific Medical
LAN = Local Area Network
IEEE = Institute of Electrical and Electronic Engineers
SRD
= Short Range Device
RLAN = Radio Local Area Network
ISS = International Space Station
IMT = International mobile Telecommunications at 2000MHz
MSS = Mobile Satellite Service
W-CDMA = Wideband-CDMA
GMSK = Gaussian Minimum Shift Keying
UMTS = Universal Mobile Telecommunication System
UWC = Universal Wireless Communication
MSS Downlink = Mobile Satellite Service of UMTS
RFID
=
Radio Frequency Identification
OSCAR = Orbit Satellite Carry Amateur Radio
FHSS = Frequency Hopping Spread Spectrum
DSSS = Direct Sequence Spread Spectrum
DECT = Digital Enhanced Cordless Telecommunications
NUS
= North America
EU = Europe
ITU = International Telecommunications Union
ITU-R = ITU Radio communication sector
(D) = Germany
TDD = Time Division Multiplex
FDD = Frequency Division Multiplex
TDMA = Time Division Multiplex Access
CDMA = Code Division Multiplex Access
2G = Mobile Systems GSM, DCS
3G = IMT-2000
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Schematic
Figure 4: Schematic of the Reference Board
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Part List
Part
Number Value Size Function / Short explanation Manufacturer Order Code Order
source
IC1 BGU2003 SOT363 LNA-MMIC Philips Semiconductors BGU2003 PHL
IC2 BGA6589 SOT89 TX-PA-MMIC Philips Semiconductors BGA6589 PHL
Q1 PBSS5140T SOT23 TX PA-standby control Philips Semiconductors PBSS5140T PHL
Q2 BC847BW SOT323 Drive of D3 Philips Semiconductors BC847BW PHL
Q3 BC857BW SOT323 SPDT switching Philips Semiconductors BC857BW PHL
Q4 BC847BW SOT323 PA logic level compatibility Philips Semiconductors BC847BW PHL
D1 BAP51-02 SOD523 SPDT-TX; series part of the PIN diode switch Philips Semiconductors BAP51-02 PHL
D2 BAP51-02 SOD523 SPDT-RX; shunt part of the PIN diode switch Philips Semiconductors BAP51-02 PHL
D3 LYR971 0805 LED, yellow, RX and bias current control of IC1 OSRAM 67S5126 Bürklin
D4 LYR971 0805 LED, yellow; TX OSRAM 67S5126 Bürklin
D5 LYR971 0805 LED, yellow; SPDT; voltage level shifter OSRAM 67S5126 Bürklin
D6 BZV55-B5V1 SOD80C Level shifting for being 3V/5V tolerant Philips Semiconductors BZV55-B5V1 PHL
D7 BZV55-C10 SOD80C Board DC polarity & over voltage protection Philips Semiconductors BZV55-C10 PHL
D8 BZV55-C3V6 SOD80C Board DC polarity & over voltage protection Philips Semiconductors BZV55-C3V6 PHL
D9 BZV55-C3V6 SOD80C Board DC polarity & over voltage protection Philips Semiconductors BZV55-C3V6 PHL
R1 150Ω 0402 SPDT bias Yageo RC0402
Vitrohm512 26E558 Bürklin
R2 1k8 0402 LNA MMIC current CTRL Yageo RC0402
Vitrohm512 26E584 Bürklin
R3 optional 0402 L2 resonance damping; optional --- optional
R4 47Ω 0402 LNA MMIC collector bias Yageo RC0402
Vitrohm512 26E546 Bürklin
R5 270Ω 0402 RX LED current adj. Yageo RC0402
Vitrohm512 26E564 Bürklin
R7 39k 0402 Q3 bias SPDT Yageo RC0402
Vitrohm512 26E616 Bürklin
R8 150Ω 0805 PA-MMIC collector current adjust and
temperature compensation Yageo RC0805
Vitrohm503 11E156 Bürklin
R9 39k 0402 Helps switch off of Q1 Yageo RC0402
Vitrohm512 26E616 Bürklin
R10 2k2 0402 Q1 bias PActrl Yageo RC0402
Vitrohm512 26E586 Bürklin
R11 1kΩ 0402 LED current adjust; TX-PA Yageo RC0402
Vitrohm512 26E578 Bürklin
R12 82k 0402 Q2 drive Yageo RC0402
Vitrohm512 26E624 Bürklin
R13 150Ω 0805 PA-MMIC collector current adjust Yageo RC0805
Vitrohm503 11E156 Bürklin
R14 150Ω 0805 PA-MMIC collector current adjust Yageo RC0805
Vitrohm503 11E156 Bürklin
R15 4k7 0402 Improvement of SPDT-Off Yageo RC0402
Vitrohm512 26E594 Bürklin
R16 100k 0402 PActrl; logic level conversion Yageo RC0402
Vitrohm512 26E626 Bürklin
R17 47k 0402 PActrl; logic level conversion Yageo RC0402
Vitrohm512 26E618 Bürklin
L1 22nH 0402 SPDT RF blocking for biasing Würth Elektronik, WE-MK 744 784 22 WE
L2 1n8 0402 LNA output matching Würth Elektronik, WE-MK 744 784 018 WE
L3 8n2 0402 PAout Matching Würth Elektronik, WE-MK 744 784 082 WE
L4 18nH 0402 LNA input match Würth Elektronik, WE-MK 744 784 18 WE
L5 6n8 0402 PA input matching Würth Elektronik, WE-MK 744 784 068 WE
C1 1nF 0402 medium RF short for SPDT bias Murata, X7R GRP155 R71H 102 KA01E
Murata
C2 6p8 0402 medium RF short for SPDT bias Murata, C0G GRP1555 C1H 6R8
DZ01E Murata
C3 6p8 0402 Antenna DC decoupling Murata, C0G GRP1555 C1H 6R8
DZ01E Murata
C4 2p2 0402 RF short SPDT shunt PIN Murata, C0G GRP1555 C1H 2R2
CZ01E Murata
C5 2p7 0402 DC decoupling LNA input + match Murata, C0G GRP1555 C1H 2R7
CZ01E Murata
C6 4p7 0402 RF short output match Murata, C0G GRP1555 C1H 4R7
CZ01E Murata
C7 1p2 0402 LNA output matching Murata, C0G GRP1555 C1H 1R2 CZ0E Murata
C8 2u2/10V 0603 Removes the line ripple together with R8-R14
from
PA supply rail Murata, X5R GRM188 R61A 225
KE19D Murata
C9 100nF/16V 0402 Ripple rejection PA Murata, Y5V GRM155 F51C 104 ZA01D
Murata
C10 22pF 0402 DC decoupling PA input Murata, C0G GRP1555 C1H 220 JZ01E Murata
C11 6p8 0402 RF short-bias PA Murata, C0G GRP1555 C1H 6R8
DZ01E Murata
C12 1nF 0402 PA, Supply RF short Murata, X7R GRP155 R71H 102 KA01E
Murata
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RF Manual
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RF Manual Appendix October 2004 24 of 35
Part
Number Value Size Function / short explanation Manufacturer Order Code Order
source
C14 2p7 0402 TX-PAout DC decoupling + matching Murata, C0G GRP1555 C1H 2R7
CZ01E Murata
C15 10u/6.3V 0805 dc rail LNVcc Murata, X5R GRM21 BR60J 106 KE19B
Murata
C16 1nF 0402 dc noise LNctrl Murata, X7R GRP155 R71H 102 KA01E
Murata
C17 2u2/10V 0603 PA dc rail Murata, X5R GRM188 R61A 225 KE34B
Murata
C18 1nF 0402 dc noise SPDT control Murata, X7R GRP155 R71H 102 KA01E
Murata
C19 1nF 0402 dc noise PActrl Murata, X7R GRP155 R71H 102 KA01E
Murata
C20 1nF 0402 dc noise LNVcc Murata, X7R GRP155 R71H 102 KA01E
Murata
C21 4p7 0402 RF short for optional LNA input match Murata, C0G GRP1555 C1H 4R7
CZ01E Murata
C22 6p8 0402 dc removal of RX-BP filter and matching Murata, C0G GRP1555 C1H 6R8
DZ01E Murata
C23 6p8 0402 dc removal of TX-LP filter and matching Murata, C0G GRP1555 C1H 6R8
DZ01E Murata
BP1 fo=2.4GHz 1008 RX band pass input filtering Würth Elektronik 748 351 024 WE
LP1 fc=2.4GHz 0805 TX low pass spurious filtering Würth Elektronik 748 125 024 WE
X1 SMA, female
µStrip tab pin
12.7mm
flange
1.3mm tab
Antenna connector, SMA, panel launcher,
female, bulkhead receptacle with flange, PTFE,
CuBe, CuNiAu Telegärtner J01 151 A08 51 Telegärtner
X2 SMA, female
µStrip tab pin
12.7mm
flange
1.3mm tab
RX-Out connector, SMA, panel launcher,
female, bulkhead receptacle with flange, PTFE,
CuBe, CuNiAu Telegärtner J01 151 A08 51 Telegärtner
X3 SMA, female
µStrip tab pin
12.7mm
flange
1.3mm tab
TX-IN connector, SMA, panel launcher, female,
bulkhead receptacle with flange, PTFE, CuBe,
CuNiAu Telegärtner J01 151 A08 51 Telegärtner
X4 BÜLA30K green LNctrl, BÜLA30K, Multiple spring wire plugs,
Solder terminal Hirschmann 15F260 Bürklin
X5 BÜLA30K red PAVcc, BÜLA30K, Multiple spring wire plugs,
Solder terminal Hirschmann 15F240 Bürklin
X6 BÜLA30K black GND, BÜLA30K, Multiple spring wire plugs,
Solder terminal Hirschmann 15F230 Bürklin
X7 BÜLA30K yellow SPDT, BÜLA30K, Multiple spring wire plugs,
Solder terminal Hirschmann 15F250 Bürklin
X8 BÜLA30K blue PActrl, BÜLA30K, Multiple spring wire plugs,
Solder terminal Hirschmann 15F270 Bürklin
X9 BÜLA30K red LNVcc, BÜLA30K, Multiple spring wire plugs,
Solder terminal Hirschmann 15F240 Bürklin
Y1 blue
{ PActrl } 40cm,
0.5qmm Insulated stranded hook-up PVC wire, LiYv,
blue, CuSn VDE0812/9.72 92F566 Bürklin
Y2 red
{ PAVcc } 40cm,
0.5qmm, Insulated stranded hook-up PVC wire, LiYv,
red, CuSn VDE0812/9.72 92F565 Bürklin
Y3 green
{ LNctrl } 40cm,
0.5qmm, Insulated stranded hook-up PVC wire, LiYv,
green, CuSn VDE0812/9.72 92F567 Bürklin
Y4 black
{ GND } 40cm,
0.5qmm Insulated stranded hook-up PVC wire, LiYv,
black, CuSn VDE0812/9.72 92F564 Bürklin
Y5 yellow
{ SPDT } 40cm,
0.5qmm, Insulated stranded hook-up PVC wire, LiYv,
yellow, CuSn VDE0812/9.72 92F568 Bürklin
Y6 white
{ LNVcc } 40cm,
0.5qmm, Insulated stranded hook-up PVC wire, LiYv,
white, CuSn VDE0812/9.72 92F569 Bürklin
Z1 - Z6 M2 M2 x 3mm Screw for PCB mounting Paul-Korth GmbH NIRO A2 DIN7985-H Paul-Korth
Z7 - Z12 M2,5 M2,5 x
4mm Screw for SMA launcher mounting Paul-Korth GmbH NIRO A2 DIN7985-H Paul-Korth
W1 FR4
compatible 47,5mm X
41,5mm Epoxy 560µm; Cu=17.5µm; Ni=5µm;
Au=0.3µm two layer double side
www.isola.de
www.haefele-
leiterplatten.de
DURAVER®-E-Cu,
Qualität 104 MLB-DE 104
ML/2
Häfele
Leiterplat-
tentechnik
W2
Aluminum
metal
finished
yellow
Aludine
47,5mm X
41,5mm X
10mm
Base metal caring the pcb and SMA connectors --- --- ---
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The PCB
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Appendix E: RF Application-basics
Complete RF Application-basics in previous RF Manual (4th
edition) which is downloadable via RF Manual website:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_man
ual
1.1 Frequency spectrum
1.2 RF transmission system
1.3 RF Front-End
For: Function of an antenna, examples of PCB design, Transistor Semiconductor Process, see
RF Manual 4th edition on the RF Manual website.
1.1 Frequency spectrum
Radio spectrum and wavelengths
Each material’s composition creates a unique pattern in the radiation emitted.
This can be classified in the “frequency” and “wavelength” of the emitted radiation.
As electro-magnetic (EM) signals travel with the speed of light, they do have the character of
propagation waves.
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A survey of the frequency bands and related wavelengths:
Band Frequency Definition
(English) Definition
(German) Wavelength - λ
acc. DIN40015 CCIR Band
VLF 3kHz to 30kHz Very Low Frequency Längswellen
(Myriameterwellen) 100km to 10km 4
LF 30kHz to 300kHz Low Frequency Langwelle
(Kilometerwellen) 10km to 1km 5
MF 300kHz to 1650kHz Medium Frequency Mittelwelle
(Hektometerwellen) 1km to 100m 6
1605KHz to 4000KHz
Boundary Wave Grenzwellen
HF 3MHz to 30MHz High Frequency Kurzwelle
(Dekameterwellen) 100m to 10m 7
VHF 30MHz to 300MHz Very High Frequency Ultrakurzwellen
(Meterwellen) 10m to 1m 8
UHF 300MHz to 3GHz Ultra High Frequency Dezimeterwellen 1m to 10cm 9
SHF 3GHz to 30GHz Super High Frequency Zentimeterwellen 10cm to 1cm 10
EHF 30GHz to 300GHz Extremely High Frequency
Millimeterwellen 1cm to 1mm 11
--- 300GHz to 3THz --- Dezimillimeterwellen 1mm-100µm 12
Literature researches according to the Microwave’s sub-bands showed a lot of different definitions with
very few or none description of the area of validity. Due to it, the following table will try to give an
overview but can’t act as a reference.
Source Nührmann Nührmann www.wer-
weiss-was.de
www.atcnea.
de Siemens
Online
Lexicon
Siemens
Online
Lexicon
ARRL
Book
No. 3126
Wikipedia
Validity IEEE Radar
Standard 521
US Military
Band Satellite
Uplink Primary
Radar Frequency
bands in the
GHz Area
Microwave
bands --- Dividing of Sat and
Radar techniques
Band GHz GHz GHz GHz GHz GHz GHz
A 0,1-0,225
C 4-8 3,95-5,8 5-6 4-8 4-8 4-8 3,95-5,8
D 1-3
E 2-3 60-90 60-90
F 2-4 90-140
G 4-6 140-220
H 6-8
I 8-10
J 10-20 5,85-8,2 5,85-8,2
K 18-27 20-40 18,0-26,5 18-26,5 10,9-36 18-26.5 18-26,5
Ka 27-40 26,5-40 17-31 26.5-40 26,5-40
Ku 12-18 ≈16 12,6-18 15,3-17,2 12.4-18 12,4-18
L 1-3 40-60 1,0-2,6 ≈1,3 1-2 0,39-1,55 1-2 1-2,6
M 60-100
mm 40-100
P 12,4-18,0 0,225-0,39 110-170 0,22-0,3
R 26,5-40,0
Q 36-46 33-50 33-50
S 3-4 2,6-3,95 ≈3 2-4 1,55-3,9 2-4 2,6-3,95
U 40,0-60,0 40-60 40-60
V 46-56 50-75 50-75
W 75-110 75-110
X 8-12 8,2-12,4 ≈10 8-12,5 6,2-10,9 8-12.4 8,2-12,4
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1.2 RF transmission system
Simplex
Half duplex
Full duplex
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1.3 RF Front-End
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Appendix F: RF Design-basics
Complete RF Design-basics in previous RF Manual (4th edition). RF
Manual 4th edition downloadable via RF Manual website:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual
For: Fundamentals and RF Amplifier design Fundamentals, download RF Manual 4th edition on the RF
Manual website.
Small signal RF amplifier parameters
1. Transistor parameters, DC to microwave
At low DC currents and voltages, one can assume a transistor acts like a voltage-controlled current
source with diode clamping action in the base-emitter input circuit. In this model, the transistor is
specified by its large signal DC-parameters, i.e., DC-current gain (B, ß, hfe
), maximum power
dissipation, breakdown voltages and so forth.
Increasing the frequency to the audio frequency range, the transistor’s parameters get frequency-
dependent phase shift and parasitic capacitance effects. For characterization of these effects, small
signal h-parameters are used. These hybrid parameters are determined by measuring voltage and
current at one terminal and by the use of open or short (standards) at the other port.
The h-parameter matrix is shown below.
h-Parameter Matrix:
∗
=
2
1
2221
1211
2
1
u
i
hh
hh
i
u
Increasing the frequency to the HF and VHF ranges, open ports become inaccurate due to electrically
stray field radiation. This results in unacceptable errors. Due to this phenomenon y-parameters were
developed. They again measure voltage and current, but use of only a “short” standard. This “short”
approach yields more accurate results in this frequency region. The y-parameter matrix is shown
below.
y-Parameter Matrix:
∗
=
2
1
2221
1211
2
1
u
u
yy
yy
i
i
T
BE
V
U
COCeII ⋅=
E
T
eI
V
r='
Thermal Voltage: VT=kT/q≈26mV@25°C
ICO=Collector reverse saturation current
Low frequency voltage gain: '
e
C
ur
R
V≈
Current gain
B
C
I
I
ß=
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Further increasing the frequency, the parasitic inductance of a “short” causes problem due to
mechanical depending parasitic. Additionally, measuring voltage, current and it’s phase is quite tricky.
The scattering parameters, or S-parameters, were developed based on the measurement of the
forward and backward traveling waves to determine the reflection coefficients on a transistor’s
terminals (or ports). The S-parameter matrix is shown below.
S-Parameter Matrix:
∗
=
2
1
2221
1211
2
1
a
a
SS
SS
b
b
2. Definition of the S-Parameters
Every amplifier has an input port and an output port (a 2-port network). Typically the input port is
labeled Port-1 and the output is labeled Port-2.
Figure 10: Two-port Network’s (a) and (b) waves
The forward-traveling waves (a) are traveling into the DUT’s (input or output) ports.
The backward-traveling waves (b) are reflected back from the DUT’s ports
The expression “port ZO terminate” means the use of a 50Ω-standard. This is not a conjugate complex
power match! In the previous chapter the reflection coefficient was defined as:
Reflection coefficient: nning waveforward ru
ng waveback runni
r=
Calculating the input reflection factor on port 1: 0
1
1
11 2=
=a
a
b
S with the output terminated in ZO.
That means the source injects a forward-traveling wave (a1) into Port-1. No forward-traveling power
(a2) injected into Port-2. The same procedure can be done at Port-2 with the
Output reflection factor: 0
2
2
22 1=
=a
a
b
S with the input terminated in ZO.
Gain is defined by: waveinput
waveoutput
gain
=
The forward-traveling wave gain is calculated by the wave (b2) traveling out off Port-2 divided by the
wave (a1) injected into Port-1.
0
1
2
21 2=
=a
a
b
S
Matrix:
∗
=
2
1
2221
1211
2
1
a
a
SS
SS
b
b
Equation:
2221212
2121111
aSaSb
aSaSb
⋅+⋅=
⋅+⋅=
Philips Semiconductors
RF Manual
5th edition
APPENDIX
Product and design manual for RF Products
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 32 of 35
The backward traveling wave gain is calculated by the wave (b1) traveling out off Port-1 divided by
the wave (a2) injected into Port-2. 0
2
1
12 1=
=a
a
b
S
The normalized waves (a) and (b) are defined as:
( )
111 2
1iZV
Z
aO
O
⋅+= = signal into Port-1
( )
222 2
1iZV
Z
aO
O
⋅+= = signal into Port-2
( )
111 2
1iZV
Z
bO
O
⋅+= = signal out of Port-1
( )
212 2
1iZV
Z
bO
O
⋅+= = signal out of Port-2
The normalized waves have units of tWat and are
referenced to the system impedance ZO. It is shown by
the following mathematical analyses:
The relationship between U, P an ZO can be written as:
O
O
ZiP
Z
u⋅== Substituting: O
O
Z
Z
Z=
0
O
O
O
O
OZ
iZ
P
Z
iZ
Z
V
a2
2
22
1
1
11
1
⋅
+=
⋅
+=
2222
1111
1
PPiZP
aO+=
⋅
+= è11 Pa= (è Unit = Ohm
Volt
Watt =)
Because
O
forward
Z
V
a=
1, the normalized waves can be determined the measuring the voltage of a
forward-traveling wave referenced to the system impedance constant O
Z. Directional couplers or
VSWR bridges can divide the standing waves into the forward- and backward-traveling voltage wave.
(Diode) Detectors convert these waves to the Vforward and Vbackward DC voltage. After an easy
processing of both DC voltages, the VSWR can be read.
Rem:
O
O
OO
OO
OO
O
OZ
Z
ZZ
ZZ
ZZ
Z
Z=
⋅
=
⋅
⋅
=
R
U
IUP2
=⋅=èRI
R
U
P⋅==
50Ω VHF-SWR-Meter built from a kit (Nuova Elettronica). It
consists of three strip-lines. The middle line passes the main
signal from the input to the output. The upper and lower strip -
lines select a part of the forward and backward traveling waves
by special electrical and magnetic cross-coupling. Diode
detectors at each coupled strip-line-end rectify the power to a
DC voltage, which is passed to an external analog circuit for
processing and monitoring of the VSWR. Applications: Power
antenna match control, PA output power detector, vector
voltmeter, vector network analysis, AGC, etc. These kinds of
circuit’s kits are published in amateur radio literature and in
several RF magazines.
IN
OUT
Vforward Vbackward
Detector
Forward transmission:
(
)
dBS20logFT 21
=
Isolation:
(
)
dBS20logS12(dB) 12
−=
Input Return Loss:
(
)
dBS20logRL 11in −=
Output Return Loss:
(
)
dBS20logRL 22OUT −=
Insertion Loss:
(
)
dBS20logIL 21
−=
Philips Semiconductors
RF Manual
5th edition
APPENDIX
Product and design manual for RF Products
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 33 of 35
2-Port Network definition
Figure 11: S-Parameters in the Two-port Network
Philips’ data sheet parameter Insertion power gain |S21|2: 21
2
21 log20log10 SdBSdB ⋅=⋅
Example: Calculate the insertion power gain for the BGA2003 at 100MHz, 450MHz,
1800MHz, and 2400MHz for the bias set-up VVS-OUT=2.5V, IVS-OUT=10mA.
Calculation: Download the S-Parameter data file [2_510A3.S2P] from the Philips’ website
page for the Silicon MMIC amplifier BGA2003.
This is a section of the file:
# MHz S MA R 50
! Freq S11 S21 S12 S22 :
100 0.58765 -9.43 21.85015 163.96 0.00555 83.961 0.9525 -7.204
400 0.43912 -28.73 16.09626 130.48 0.019843 79.704 0.80026 -22.43
500 0.39966 -32.38 14.27094 123.44 0.023928 79.598 0.75616 -25.24
1800 0.21647 -47.97 4.96451 85.877 0.07832 82.488 0.52249 -46.31
2400 0.18255 -69.08 3.89514 76.801 0.11188 80.224 0.48091 -64
Results: 100MHz è 20⋅log(21.85015) = 26.8 dB
450MHz èdB
ee
dB 6.23
2
27094.1409626.16
log20
44.12348.130 =
+°°
1800MHz è20⋅log(4.96451) = 13.9 dB
2400MHz è20⋅log(3.89514) = 11.8 dB
Input return loss
portinput at generator from availablePower
portinput from reflectedPower
11 =S
Output return loss
portoutput at generator from availablePower
portoutput from reflectedPower
22 =S
Forward transmission loss (insertion loss)
gainpower Transducer
21 =S
Reverse transmission loss (isolation)
gainpower r transduceReverse
12 =S
Philips Semiconductors
RF Manual
5th edition
APPENDIX
Product and design manual for RF Products
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 34 of 35
3-Port Network definition
Typical vehicles for 3-port s-parameters are: Directional couplers, power splitters, combiners, and
phase splitters.
Figure 12: Three-port Network's (a) and (b) waves
3
-
Port s
-
parameter definition:
§ Port reflection coefficient / return loss:
Port 1 è 0)a ;0(
1
1
11 32
|==
=a
a
b
S
Port 2 è 0)a ;0(
2
2
22 31
|==
=a
a
b
S
Port 3 è 0)a ;0(
3
3
33 21
|==
=a
a
b
S
§ Transmission gain:
Port 1=>2 è 0)a(
1
2
21 3
|=
=a
b
S
Port 1=>3 è )0(
1
3
31 2
|=
=a
a
b
S
Port 2=>3 è )0(
2
3
32 1
|=
=a
a
b
S
Port 2=>1 è 0)a(
2
1
12 3
|=
=a
b
S
Port 3=>1 è 0)a(
3
1
31 2
|=
=a
b
S
Port 3=>2 è )0(
2
3
23 1
|=
=a
a
b
S
Philips Semiconductors
RF Manual
5th edition
APPENDIX
Product and design manual for RF Products
4322 252 06394 © Koninklijke Philips Electronics N.V.
RF Manual Appendix October 2004 35 of 35
MAIN FILE RF Manual
In separate file !
Download main RF Manual from internet:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: October 2004
Document
order number: 4322 252 06394
Published in The Netherlands
