QM3002N3 Datasheet. Www.s Manuals.com. Ra.03 Ubiq
User Manual: Marking of electronic components, SMD Codes M3, M3*, M3002N, M3014M, M3014N, M3016M, M3016N, M3018M, M3018N, M3022M, M33, M36, M3=***, M3T, M3V. Datasheets 2SA812, ADM1813-10AKS, ADM1813-10ART, ADM1813-5AKS, ADM1813-5ART, BZX384-B16, DTB743XE, DTB743XM, LM258ADGKR, MMSZ5258, QM3002N3, QM3014M6, QM3014N6, QM3016M6, QM3016N6, QM3018M6, QM3018N6, QM3022M6, RT9818D-13GV, SM36.
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QM3002N3 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3002N3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3002N3 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 18mΩ 28A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN3X3 Pin Configuration z Super Low Gate Charge D z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available SS S G Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ 10s Steady State Units 30 V ±20 V 1 28 A 1 18 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1 ID@TA=25℃ Continuous Drain Current, VGS @ 10V 11.7 7.4 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 9.4 6 A IDM Pulsed Drain Current 2 3 56 A EAS Single Pulse Avalanche Energy 72 mJ IAS Avalanche Current 21 A 20.8 W PD@TC=25℃ 4 Total Power Dissipation 4 PD@TA=25℃ Total Power Dissipation 4.2 1.67 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC Parameter Typ. Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) 1 Thermal Resistance Junction-Case Max. Unit --- 75 ℃/W --- 30 ℃/W --- 6 ℃/W Rev A.03 D061611 1 QM3002N3 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.022 --- V/℃ VGS=10V , ID=15A --- 16 18 VGS=4.5V , ID=10A --- 24 30 1.0 1.5 2.5 V --- -5.1 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 19.4 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (4.5V) --- 6.2 8.7 Qgs Gate-Source Charge --- 2.4 3.4 Qgd Gate-Drain Charge --- 2.5 3.5 Td(on) VDS=15V , VGS=4.5V , ID=15A nC --- 3 6.0 Rise Time VDD=10V , VGS=10V , RG=3.3Ω --- 7.6 14 Turn-Off Delay Time ID=15A --- 20.8 42 Fall Time --- 4 8 Ciss Input Capacitance --- 572 801 Coss Output Capacitance --- 80 112 Crss Reverse Transfer Capacitance --- 65 91 Min. Typ. Max. Unit 16 --- --- mJ Min. Typ. Max. Unit --- --- 28 A Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=10A Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 ISM Pulsed Source Current VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=30A , dI/dt=100A/µs , TJ=25℃ --- --- 56 A --- --- 1.2 V --- 17 --- nS --- 3 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 QM3002N3 N-Ch 30V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source 10 IS Source Current(A) 8 6 TJ=150℃ TJ=25℃ 4 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized on resistance 1.8 Normalized VGS(th) 1.4 1.4 1 1.0 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 QM3002N3 N-Ch 30V Fast Switching MOSFETs 1000 100.00 F=1.0MHz 10us 100us 10.00 100 ID (A) Capacitance (pF) Ciss Coss 1ms 10ms 100ms 1.00 DC Crss 0.10 TC=25℃ Single Pulse 10 0.01 1 5 9 13 17 21 25 0.1 VDS Drain to Source Voltage (V) 1 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4 www.s-manuals.com
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