QM3002N3 Datasheet. Www.s Manuals.com. Ra.03 Ubiq

User Manual: Marking of electronic components, SMD Codes M3, M3*, M3002N, M3014M, M3014N, M3016M, M3016N, M3018M, M3018N, M3022M, M33, M36, M3=***, M3T, M3V. Datasheets 2SA812, ADM1813-10AKS, ADM1813-10ART, ADM1813-5AKS, ADM1813-5ART, BZX384-B16, DTB743XE, DTB743XM, LM258ADGKR, MMSZ5258, QM3002N3, QM3014M6, QM3014N6, QM3016M6, QM3016N6, QM3018M6, QM3018N6, QM3022M6, RT9818D-13GV, SM36.

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1

QM3002N3

N-Ch 30V Fast Switching MOSFETs

Symbol Parameter

Rating

Units

10s Steady State

VDS Drain-Source Voltage 30 V

VGS Gate-Source Voltage ±20 V

ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 28 A

ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 18 A

ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 11.7 7.4 A

ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 9.4 6 A

IDM Pulsed Drain Current2 56 A

EAS Single Pulse Avalanche Energy3 72 mJ

IAS Avalanche Current 21 A

PD@TC=25℃ Total Power Dissipation4 20.8 W

PD@TA=25℃ Total Power Dissipation4 4.2 1.67 W

TSTG Storage Temperature Range -55 to 150 ℃

TJ Operating Junction Temperature Range -55 to 150 ℃

Symbol Parameter Typ. Max. Unit

RθJA Thermal Resistance Junction-Ambient 1 --- 75

℃/W

RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 30 ℃/W

RθJC Thermal Resistance Junction-Case1 --- 6

℃/W

BVDSS RDSON ID

30V 18mΩ 28A

Absolute Maximum Ratings

Thermal Data

Rev A.03 D061611

The QM3002N3 is the highest performance

trench N-ch MOSFETs with extreme high cell

density , which provide excellent RDSON and

gate charge for most of the synchronous buck

converter applications .

The QM3002N3 meet the RoHS and Green

Product requirement , 100% EAS guaranteed

with full function reliability approved.

z Advanced high cell density Trench technology

z Super Low Gate Charge

z Excellent CdV/dt effect decline

z 100% EAS Guaranteed

z Green Device Available

General Description

Features

Applications

z High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

z Networking DC-DC Power System

z Load Switch

DFN3X3 Pin Configuration

Product Summery

D

G

S

S

S

2

QM3002N3

N-Ch 30V Fast Switching MOSFETs

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V

△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.022 --- V/℃

RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=15A --- 16 18

mΩ

VGS=4.5V , ID=10A --- 24 30

VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V

△VGS(th) VGS(th) Temperature Coefficient --- -5.1 ---

mV/℃

IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA

VDS=24V , VGS=0V , TJ=55℃ --- --- 5

IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ---

±100 nA

gfs Forward Transconductance VDS=5V , ID=30A --- 19.4 --- S

Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω

Qg Total Gate Charge (4.5V)

VDS=15V , VGS=4.5V , ID=15A

--- 6.2 8.7

nC

Qgs Gate-Source Charge --- 2.4 3.4

Qgd Gate-Drain Charge --- 2.5 3.5

Td(on) Turn-On Delay Time

VDD=10V , VGS=10V , RG=3.3Ω

ID=15A

--- 3 6.0

ns

Tr Rise Time --- 7.6 14

Td(off) Turn-Off Delay Time --- 20.8 42

Tf Fall Time --- 4 8

Ciss Input Capacitance

VDS=15V , VGS=0V , f=1MHz

--- 572 801

pF

Coss Output Capacitance --- 80 112

Crss Reverse Transfer Capacitance --- 65 91

Symbol Parameter Conditions Min. Typ. Max. Unit

EAS Single Pulse Avalanche Energy5 VDD=25V , L=0.1mH , IAS=10A 16 --- --- mJ

Symbol Parameter Conditions Min. Typ. Max. Unit

IS Continuous Source Current1,6 VG=VD=0V , Force Current --- --- 28 A

ISM Pulsed Source Current2,6 --- --- 56 A

VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V

trr Reverse Recovery Time

IF=30A , dI/dt=100A/µs , TJ=25℃

--- 17 --- nS

Qrr Reverse Recovery Charge --- 3 --- nC

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A

4.The power dissipation is limited by 150℃ junction temperature

5.The Min. value is 100% EAS tested guarantee.

6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Diode Characteristics

Guaranteed Avalanche Characteristics

3

QM3002N3

N-Ch 30V Fast Switching MOSFETs

0

2

4

6

8

10

00.30.60.9

VSD , Source-to-Drain Voltage (V)

I

S

Source Current(A)

T

J

=150℃T

J

=25℃

0.2

0.6

1

1.4

1.8

-50 0 50 100 150

T

J

,Junction Temperature (℃ )

Normalized V

GS(th)

0.2

0.6

1.0

1.4

1.8

-50 0 50 100 150

T

J

, Junction Temperature (℃)

Normalized on resistanc

e

Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source

Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

4

QM3002N3

N-Ch 30V Fast Switching MOSFETs

10

100

1000

1 5 9 13172125

V

DS

Drain to Source Voltage (V)

Capacitance (pF)

F=1.0MHz

Ciss

Coss

Crss

0.01

0.10

1.00

10.00

100.00

0.1 1 10 100

V

DS

(V)

I

D

(A)

10us

100us

10ms

100ms

DC

T

C

=25℃

Single Pulse

1ms

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Pulse Width (s)

Normalized Thermal Response (R

θJC

)

P

DM

D = T

ON

/T

T

J

peak = T

C

+ P

DM

x R

θJC

T

ON

T

0.02

0.01

0.05

0.1

0.2

DUTY=0.5

SINGLE PULSE

Fig.8 Safe Operating Area

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.7 Capacitance

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform

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