QM3014M6_N6_ Qm3014m6, Qm3014n6 Ubiq
User Manual: Marking of electronic components, SMD Codes M3, M3*, M3002N, M3014M, M3014N, M3016M, M3016N, M3018M, M3018N, M3022M, M33, M36, M3=***, M3T, M3V. Datasheets 2SA812, ADM1813-10AKS, ADM1813-10ART, ADM1813-5AKS, ADM1813-5ART, BZX384-B16, DTB743XE, DTB743XM, LM258ADGKR, MMSZ5258, QM3002N3, QM3014M6, QM3014N6, QM3016M6, QM3016N6, QM3018M6, QM3018N6, QM3022M6, RT9818D-13GV, SM36.
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QM3014M6/N6 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3014M6/N6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3014M6/N6 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 12mΩ 50A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Pin Configuration Features D z Advanced high cell density Trench technology D d Super Low Gate Charge z z Excellent CdV/dt effect decline G S SS z 100% EAS Guaranteed S SS G z Green Device Available QM3014M6in QM3014N6in Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ IDM Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V 1 50 A 1 38 A 1 11 A 100 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 53 mJ IAS Avalanche Current 22 A Total Power Dissipation 41.7 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TC=25℃ 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case 1 Max. Unit --- 62 ℃/W --- 3 ℃/W Rev A.01 D051310 1 QM3014M6/N6 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.0232 --- V/℃ VGS=10V , ID=15A --- 10 12 VGS=4.5V , ID=10A --- 15 18 1.0 1.5 2.5 V --- -5.08 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 24.4 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 36 Ω Qg Total Gate Charge (4.5V) --- 9.82 --- Qgs Gate-Source Charge --- 2.24 --- Qgd Gate-Drain Charge --- 5.54 --- Td(on) VDS=20V , VGS=4.5V , ID=12A nC --- 6.4 --- Rise Time VDD=15V , VGS=10V , RG=1.5Ω --- 39 --- Turn-Off Delay Time ID=20A --- 20.8 --- Fall Time --- 4.7 --- Ciss Input Capacitance --- 896 --- Coss Output Capacitance --- 126 --- Crss Reverse Transfer Capacitance --- 108 --- Min. Typ. Max. Unit 24.6 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=15A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- --- 50 A --- --- 100 A --- --- 1 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A 4.The power dissipation is limited by 175℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 QM3014M6/N6 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 12 22 VGS=10V VGS=7V ID=12A VGS=5V VGS=4.5V 8 18 6 RDSON (mΩ) ID Drain Current (A) 10 VGS=3V 4 14 2 0 0 0.25 0.5 0.75 VDS , Drain-to-Source Voltage (V) 10 1 2 Fig.1 Typical Output Characteristics 8 10 10 ID=12A VGS Gate to Source Voltage (V) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 8 6 4 2 0 0 1.2 Fig.3 Forward Characteristics of Reverse 7.5 15 22.5 QG , Total Gate Charge (nC) 30 Fig.4 Gate-Charge Characteristics 1.5 2.0 Normalized On Resistance Normalized VGS(th) 6 VGS (V) Fig.2 On-Resistance vs. G-S Voltage 12 IS Source Current(A) 4 1 1.5 1.0 0.5 0.5 0 -50 25 100 TJ ,Junction Temperature ( ℃) -50 175 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 QM3014M6/N6 N-Ch 30V Fast Switching MOSFETs 10000 1000.00 F=1.0MHz 10us Ciss 1000 100us 10.00 ID (A) Capacitance (pF) 100.00 Coss 10ms 100ms DC 1.00 100 Crss 0.10 TC=25℃ Single Pulse 10 0.01 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 25 0.1 1 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM 0.02 0.01 0.01 0.00001 TON D = TON/T TJpeak = TC + PDM x RθJC SINGLE PULSE 0.0001 0.001 T 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Wave 4
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